会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 4. 发明专利
    • DE102009034651A1
    • 2010-04-29
    • DE102009034651
    • 2009-07-24
    • INFINEON TECHNOLOGIES AG
    • HINZ TORSTEN
    • G06F12/00
    • An embodiment of the invention relates to a mass storage device including a nonvolatile memory device with a plurality of memory management blocks and an address translation table formed with pointers to locations of the memory management blocks. A volatile memory device is included with an address index table formed with pointers to the pointers to the locations of the memory management blocks. The address index table is stored in the nonvolatile memory upon loss of bias voltage. Changes to the address translation table are accumulated in the volatile memory and written to the address translation table when at least a minimum quantity of the changes has been accumulated. The changes to the logical block address translation table accumulated in the volatile memory are written to a page in the address translation table after prior data in the page has been updated, written to another page, and then erased.