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1. 发明申请

US20120118044A1 METHOD AND SYSTEM FOR MANAGING A POLLUTION-PREVENTION FACILITY 审中-公开
标题翻译：用于管理防污染设施的方法和系统
公开(公告)号：US20120118044A1
公开(公告)日：2012-05-17
申请号：US13381376
申请日：2009-12-03
申请人： II Hwan Choi , Han Soo Kim , Sun Tae Kim , Ik Jae Lee
发明人： II Hwan Choi , Han Soo Kim , Sun Tae Kim , Ik Jae Lee
IPC分类号： G01N7/00
CPC分类号： B01D53/30
摘要： There are disclosed a method for managing a pollution prevention facility and a system for effectively managing the pollution prevention facility which can exhaust pollutants, and a system thereof. A method for managing a pollution prevention facility includes a first measuring step of measuring pollutants before a pollution prevention facility treats a pollutant outlet; a second measuring step of measuring the amount of pollutants after the pollution prevention facility treats the pollutant outlet; and a managing step of managing an exchange period of a filling material provided in the pollution prevention facility.
摘要翻译：公开了一种污染防治设备的管理方法和能够排除污染物的污染防治设备的系统及其系统。污染防治设备的管理方法包括在污染防治设备对污染物出口进行处理之前测量污染物的第一测量步骤; 第二测量步骤，用于测量污染物排放设施处理污染物出口后的污染物量; 以及管理设置在防污染设施中的填充材料的交换周期的管理步骤。

2. 发明授权

US06177292B1 Method for forming GaN semiconductor single crystal substrate and GaN diode with the substrate 失效
标题翻译：用于形成GaN半导体单晶衬底和具有衬底的GaN二极管的方法
公开(公告)号：US06177292B1
公开(公告)日：2001-01-23
申请号：US08985440
申请日：1997-12-05
申请人： Chang-Hee Hong , Sun Tae Kim
发明人： Chang-Hee Hong , Sun Tae Kim
IPC分类号： H01L2120
CPC分类号： C30B23/02 , B82Y20/00 , C30B29/406 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02658 , H01L21/02664 , H01L33/007 , H01L33/0079 , H01S5/0206 , H01S5/305 , H01S5/34333 , H01S2301/173
摘要： Method for forming a single crystal GaN semiconductor substrate and a GaN diode with the substrate is disclosed which forms in a short time period, has a low crystal defect concentration and allows forming a size large enough to fabricate an optical device, the method including either the steps of fast growth of a GaN group material on an oxide substrate to a thickness without cracking and subjecting to mechanical polish to remove a portion of the oxide substrate, and growing GaN again on the grown GaN layer and complete removal of the remaining oxide substrate to obtain a GaN film, or the steps of separating the oxide substrate from the GaN layer utilizing cooling to obtain a GaN film, grown GaN on the GaN film to a predetermined thickness to form a GaN bulk single crystal and mirror polishing it to form the GaN single crystal substrate, whereby a defectless GaN single crystal substrate of a size required for fabrication of an optical device can be obtained within a short time period because fast homoeptaxial growth of a GaN film is allowed.
摘要翻译：公开了在短时间内形成单晶GaN半导体衬底和GaN二极管的方法，其具有低晶体缺陷浓度并且允许形成足够大的尺寸以制造光学器件，该方法包括将GaN基材料在氧化物基板上快速生长成不破裂的厚度并经受机械抛光以去除一部分氧化物基板的步骤，并且在生长的GaN层上再次生长GaN并完全去除剩余的氧化物基板获得GaN膜，或者利用冷却从氮化镓层分离氧化物衬底以获得GaN膜，在GaN膜上生长GaN至预定厚度以形成GaN体单晶并进行镜面抛光以形成GaN 单晶衬底，由此可以在短时间内获得具有制造光学器件所需尺寸的无缺陷GaN单晶衬底因为允许GaN薄膜的快速同轴生长。

3. 发明申请

US20140228230A1 RESISTANCE GENE TO XANTHOMONAS AXONOPODIS IN SOYBEANS 审中-公开
标题翻译：大豆中XANTHOMONAS AXONOPODIS的抗性基因
公开(公告)号：US20140228230A1
公开(公告)日：2014-08-14
申请号：US14118494
申请日：2011-10-31
申请人： Sung Yun Kim , Yong Chul Kim , Hyun Kyung Kim , Jung Min Kim , In Soo Choi , Young Whan Choi , Jum Soon Kang , Sun Tae Kim , Young Hoon Park , Keun Ki Kim , Ki Won Oh , Young Hoon Lee , Chan Sik Jung , Jong Mim Ko , In Youl Baek , Keum Yong Park , Hee Yeong Chung
发明人： Sung Yun Kim , Yong Chul Kim , Hyun Kyung Kim , Jung Min Kim , In Soo Choi , Young Whan Choi , Jum Soon Kang , Sun Tae Kim , Young Hoon Park , Keun Ki Kim , Ki Won Oh , Young Hoon Lee , Chan Sik Jung , Jong Mim Ko , In Youl Baek , Keum Yong Park , Hee Yeong Chung
IPC分类号： C12Q1/68
CPC分类号： C12Q1/6895 , A01H1/04 , A01H5/10 , C12Q2600/112
摘要： The present invention relates to a marker composition for diagnosing resistance to bacterial blight of soybean; a composition for diagnosing resistance to bacterial blight of soybean, comprising a primer which specifically binds to a marker gene; a diagnostic kit for diagnosing resistance to bacterial blight of soybean, comprising the composition; and a method for diagnosing resistance to bacterial blight of soybean. As described above, with the use of the marker gene for diagnosing resistance to bacterial blight of soybean according to the present invention, it is possible to breed varieties that are resistant to bacterial blight of soybean, thus providing disease-resistant and high-quality, superior varieties.
摘要翻译：本发明涉及用于诊断大豆细菌性病害抗性的标记组合物; 用于诊断大豆细菌性枯萎病的组合物，其包含特异性结合标记基因的引物; 用于诊断大豆细菌性病害抗性的诊断试剂盒，其包含所述组合物; 以及用于诊断大豆细菌性枯萎病的方法。如上所述，利用本发明的用于诊断大豆细菌性病害抗性的标记基因，可以培育抗大豆细菌性病害的品种，从而提供抗病性和高品质，优良品种。

4. 发明申请

US20130312613A1 BAD ODOR REMOVAL SYSTEM FOR SEWAGE PIPE 有权
标题翻译：用于管道的气味去除系统
公开(公告)号：US20130312613A1
公开(公告)日：2013-11-28
申请号：US13878285
申请日：2011-10-07
申请人： Yong Sog Kwon , Sung Chang Hong , Shi Cheol Shin , Sun Tae Kim
发明人： Yong Sog Kwon , Sung Chang Hong , Shi Cheol Shin , Sun Tae Kim
IPC分类号： A61L9/00
CPC分类号： A61L9/00 , A61L9/16 , A61L2209/111 , A61L2209/14 , E03F5/08 , F24F2003/1689
摘要： The present invention relates to a bad odor removal system that is applied to a long sewage pipe, and provides a bad odor removal system for a swage pipe, and the system basically comprises: deodorizers which are installed at certain intervals on the upper part of the sewage pipe; and a bad odor ventilating device which is installed on the inside of the sewage pipe in connection with said deodorizers, and includes a cooling device, wherein an air flow blocking membrane is installed on the inside of the sewage pipe and bad odor dispersion-preventive plates that actively operate are installed on an outlet and a manhole, thereby effectively blocking all kinds of bad odors that may be generated from the entire sewage pipe.
摘要翻译：本发明涉及一种适用于长污水管道的恶臭除臭系统，为挤压管提供了不良气味去除系统，该系统基本上包括：除臭剂，其以一定间隔安装在污水管道以及安装在与所述除臭器相连的污水管内部的不良气味通风装置，并且包括冷却装置，其中在污水管内部安装有气流阻挡膜和不良气味分散防止板积极操作安装在出口和人孔上，从而有效地阻止了从整个污水管道产生的各种恶臭。

5. 发明授权

US08834613B2 Bad odor removal system for sewage pipe 有权
标题翻译：污水管道恶臭除臭系统
公开(公告)号：US08834613B2
公开(公告)日：2014-09-16
申请号：US13878285
申请日：2011-10-07
申请人： Yong Sog Kwon , Sung Chang Hong , Shi Cheol Shin , Sun Tae Kim
发明人： Yong Sog Kwon , Sung Chang Hong , Shi Cheol Shin , Sun Tae Kim
IPC分类号： B01D53/02 , E03F5/08 , A61L9/00 , F24F3/16
CPC分类号： A61L9/00 , A61L9/16 , A61L2209/111 , A61L2209/14 , E03F5/08 , F24F2003/1689
摘要： The present invention relates to a bad odor removal system that is applied to a long sewage pipe, and provides a bad odor removal system for a swage pipe, and the system basically comprises: deodorizers which are installed at certain intervals on the upper part of the sewage pipe; and a bad odor ventilating device which is installed on the inside of the sewage pipe in connection with said deodorizers, and includes a cooling device, wherein an air flow blocking membrane is installed on the inside of the sewage pipe and bad odor dispersion-preventive plates that actively operate are installed on an outlet and a manhole, thereby effectively blocking all kinds of bad odors that may be generated from the entire sewage pipe.
摘要翻译：本发明涉及一种适用于长污水管道的恶臭除臭系统，为挤压管提供了不良气味去除系统，该系统基本上包括：除臭剂，其以一定间隔安装在污水管道以及安装在与所述除臭器相连的污水管内部的不良气味通风装置，并且包括冷却装置，其中在污水管内部安装有气流阻挡膜和不良气味分散防止板积极操作安装在出口和人孔上，从而有效地阻止了从整个污水管道产生的各种恶臭。

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