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1. 发明申请

WO2022233720A1 SEMICONDUCTOR DEVICE WITH BACK SIDE PROTECTION MECHANISM 审中-公开
公开(公告)号：WO2022233720A1
公开(公告)日：2022-11-10
申请号：PCT/EP2022/061452
申请日：2022-04-29
申请人： IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS / LEIBNIZ-INSTITUT FÜR INNOVATIVE MIKROELEKTRONIK , TECHNISCHE UNIVERSITÄT BERLIN
发明人： HERFURTH, Norbert , LISKER, Marco , AMINI, Elham , BOIT, Christian , SEIFERT, Jean-Pierre
IPC分类号： H01L25/16 , H01L31/167 , H01L33/00 , H01L23/00 , G06F21/87 , H01L33/22 , H01L33/62
摘要： The invention relates to a semiconductor device (100) comprising: a substrate stack (122) comprising two permanently bonded semiconductor bodies (102, 104), which are stacked in a depth direction that points perpendicularly from a front side (108) towards a back side (110) of the substrate stack, and which share a buried bonding interface (106) that extends at a respective distance from the front side and the back side and substantially parallel thereto; wherein: - a first of the two semiconductor bodies, hereinafter the protection body (104), comprises an active region (113) with one or more light emitters (112) at the buried bonding interface, and a light absorption region (114), which follows the active region in the depth direction and is opaque for light emitted from the one or more light emitters; - a second of the two semiconductor bodies, hereinafter the circuit body (102), extends from the buried bonding interface to the front side of the substrate stack, is transmissive for the light emitted from the one or more light emitters, and comprises at least one light detector (118, 120) at the front side of the substrate stack, which is configured provide a detector signal indicative of a detected light intensity of light emitted from the one or more light emitters and transmitted through the circuit body. The semiconductor device (100) further comprises a driver unit that is configured to drive operation of the light emitters using predetermined operation parameters.

2. 发明公开

EP3306654A1 METHOD FOR PREVENTING VERTICAL AND LATERAL INHOMOGENEITIES WHEN ETCHING THROUGH-SILICON VIAS 有权
标题翻译：通过硅通孔蚀刻时预防垂直和横向不均匀性的方法
公开(公告)号：EP3306654A1
公开(公告)日：2018-04-11
申请号：EP17193221.3
申请日：2017-09-26
申请人： IHP GmbH - Innovations for High Performance Microelectronics / Leibniz-Institut für innovative Mikroelektronik
发明人： WIETSTRUCK, Matthias , KAYNAK, Mehmet , KULSE, Philip , LISKER, Marco , MARSCHMEYER, Steffen , WOLANSKY, Dirk
IPC分类号： H01L21/768 , H01L23/48
摘要： A method for producing a semiconductor device, comprising the steps of: providing a silicon wafer having a plurality of raised portions of equal height on a first surface of the silicon wafer as a placeholder for through-silicon vias; depositing an etch stop layer on the first surface of the silicon wafer; planarizing a surface of the etch stop layer; permanently bonding a first carrier wafer on the surface of the etch stop layer; producing components on or in a second surface of the silicon wafer in a front-end-of-line process; etching a plurality of trenches into the silicon wafer using a masked etching process, proceeding from the second surface of the silicon wafer, each trench being formed at the respective location of one raised portion of the plurality of raised portions; depositing side wall insulation layers made of insulating material on side walls of the trenches; forming through-silicon vias by filling the trenches with electrically conductive material; producing a conductor path stack in a back-end-of-line process for contacting the active components on the second surface of the silicon wafer; temporarily bonding a second carrier wafer onto a surface of the conductor path stack; removing the first carrier wafer and exposing the through-silicon vias by partially removing the etch stop layer.
摘要翻译：一种制造半导体器件的方法，包括以下步骤：在硅晶片的第一表面上提供具有相同高度的多个凸起部分的硅晶片作为硅通孔的占位符; 在硅晶片的第一表面上沉积蚀刻停止层; 平坦化蚀刻停止层的表面; 将第一载体晶片永久地结合在所述蚀刻停止层的表面上; 在线前处理中在硅晶片的第二表面上或其中生产组件; 使用掩模蚀刻工艺将多个沟槽蚀刻到硅晶片中，从硅晶片的第二表面开始，每个沟槽形成在多个凸起部分的一个凸起部分的相应位置处; 在沟槽的侧壁上沉积由绝缘材料制成的侧壁绝缘层; 通过用导电材料填充沟槽来形成硅通孔; 在后端处理工艺中产生导体路径堆叠，用于接触硅晶片的第二表面上的有源部件; 将第二载体晶片暂时接合到所述导体路径堆叠的表面上; 通过部分地去除所述蚀刻停止层来去除所述第一载体晶片并且暴露所述硅通孔。

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