专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2010066630A1 BIPOLARTRANSISTOR MIT SELBSTJUSTIERTEM EMITTERKONTAKT 审中-公开
标题翻译：自对准双极发射极接触
公开(公告)号：WO2010066630A1
公开(公告)日：2010-06-17
申请号：PCT/EP2009/066316
申请日：2009-12-03
申请人： IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS / LEIBNIZ-INSTITUT FÜR INNOVATIVE MIKROELEKTRONIK , FOX, Alexander , HEINEMANN, Bernd , MARSCHMEYER, Steffen
发明人： FOX, Alexander , HEINEMANN, Bernd , MARSCHMEYER, Steffen
IPC分类号： H01L21/331 , H01L29/737 , H01L29/732 , H01L29/08 , H01L29/10 , H01L29/161
CPC分类号： H01L29/66242 , H01L21/8222 , H01L21/8249 , H01L29/0804 , H01L29/0817 , H01L29/0821 , H01L29/1004 , H01L29/161 , H01L29/66272 , H01L29/7322 , H01L29/7371
摘要： Halbleitervorrichtung, umfassend eine Substratschicht aus einem Halbleitermaterial eines ersten Leitfähigkeitstyps mit einem ersten Isolationsgebiet, und einen vertikalen Bipolartransistor mit einem in einer Öffnung des ersten Isolationsgebietes angeordneten ersten Höhenabschnitt eines Kollektors aus einkristallinem Halbleitermaterial eines zweiten Leitfähigkeitstyps, einem zweiten Isolationsgebiet, das teils auf dem ersten Höhenabschnitt des Kollektors und teils auf dem ersten Isolationsgebiet aufliegt und im Bereich des Kollektorseine Öffnung besitzt, in der ein zweiter Höhenabschnitt des Kollektors aus einkristallinem Material angeordnet ist, der einen inneren Bereich des zweiten Leitfähigkeitstyps umfasst, einer Basis aus einkristallinem Halbleitermaterial des ersten Leitfähigkeitstyps, einem Basisanschlussgebiet, das in lateraler Richtung die Basis umgibt, einem T-förmigen Emitter aus Halbleitermaterial des zweiten Leitfähigkeitstyps, der das Basisanschlussgebiet überlappt, wobei das Basisanschlussgebiet, abgesehen von einer zum Substrat hin angrenzenden Ankeimschicht oder einer zu einem Basiskontakt hin angrenzenden Metallisierungsschicht, aus einem Halbleitermaterial besteht, das vom Halbleitermaterial des Kollektors, der Basis und des Emitters in seiner chemischen Zusammensetzung verschieden ist und im Vergleich mit diesem eine höhere Beweglichkeit von Majoritätsladungsträgern des ersten Leitfähigkeitstyps aufweist.
摘要翻译：一种半导体器件，其包括具有第一隔离区域上的第一导电类型的半导体材料的基板层;以及具有设置在制成的第二导电型，第二隔离区域，在高度的第一部分的部分的单晶半导体材料的收集器的第一绝缘区域的第一高度部分的开口的圆柱体的垂直双极晶体管集电极和部分地搁置在第一隔离区域和具有在集电体的第二垂直部分的开口设置单晶材料的集电极，其包括第二导电类型的内部区域，所述第一导电类型，一个基极连接区域的单晶半导体材料的基极的面积包围在横向方向上的基极，第二导电类型，所述基极连接区域，溢出的半导体材料的T形发射器 APPT，其中，所述基极连接区域，除了一个朝向基底相邻的籽晶层或朝向相邻的金属化层的基体接触由是从集电体的半导体材料，基底，并在其化学组成和与该比较的发射极不同的半导体材料的具有第一导电类型的多数载流子的较高迁移率。

2. 发明申请

WO2013079688A1 HETERO-SUBSTRAT ZUR HERSTELLUNG VON INTEGRIERTEN SCHALTKREISEN MIT OPTISCHEN, OPTO-ELEKTRONISCHEN UND ELEKTRONISCHEN KOMPONENTEN 审中-公开
标题翻译：异质基板制造具有光学，亚光电子和电子元器件集成电路
公开(公告)号：WO2013079688A1
公开(公告)日：2013-06-06
申请号：PCT/EP2012/074141
申请日：2012-11-30
申请人： IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS / LEIBNIZ-INSTITUT FÜR INNOVATIVE MIKROELEKTRONIK
发明人： KNOLL, Dieter , HEINEMANN, Bernd , ZIMMERMANN, Lars , RICHTER, Harald , YAMAMOTO, Yuji
IPC分类号： H01L21/762 , H01L21/84 , H01L21/02 , H01L27/12
CPC分类号： H01L21/02639 , H01L21/02532 , H01L21/76262 , H01L21/84 , H01L27/1207
摘要： Hetero-Substrat, mit einer Vielzahl darin enthaltener erster Gebiete, die von einer Substrat-Oberfläche ausgehend, in einer vertikalen Richtung bezüglich des Hetero-Substrats eine SOI-Struktur aufweisen, und mit einer Vielzahl zweiter Gebiete, die in zur vertikalen Richtung senkrechten, lateralen Richtungen jeweils den ersten Gebieten mit einem Abstand benachbart sind und die in der vertikalen Richtung, von der Substrat-Oberfläche ausgehend, bis in unmittelbare Nähe der Substrat-Rückseite durchgehend aus einkristallinem Silizium gebildet sind.
摘要翻译：包含在第一区域，其显示出在基材的表面，相对于所述异质衬底，SOI结构开始在垂直方向上的各种异质基板，和多个第二区域，在垂直方向上的垂直，横向方向对应于所述第一区域相邻于一个间距和在垂直方向上，在此基础上在衬底表面的单晶硅的连续形成，到衬底背面的附近。

3. 发明授权

EP1825504B1 VERTIKALER BIPOLARTRANSISTOR 有权转让
标题翻译：垂直双极型晶体管
公开(公告)号：EP1825504B1
公开(公告)日：2012-03-28
申请号：EP05825275.0
申请日：2005-12-12
申请人： IHP GmbH-Innovations for High Performance Microelectronics / Leibniz-Institut für innovative Mikroelektronik
发明人： MARSCHMAYER, Steffen , DREWS, Jürgen , RÜCKER, Holger , HEINEMANN, Bernd
IPC分类号： H01L21/331 , H01L29/732 , H01L29/737
CPC分类号： H01L29/66287 , H01L29/1004 , H01L29/66242 , H01L29/732 , H01L29/7378
摘要： The invention relates to a vertical heterobipolar transistor, comprising a substrate made from a semiconductor material of a first conductance type and an insulation region embodied therein, a first semiconductor electrode, arranged in an opening in the insulation layer, made from a single-crystal semiconductor material of a second conductance type, embodied either as collector or emitter, which has a first vertical section and a second adjacent vertical section further away from the substrate interior in a vertical direction, whereby only the first vertical section is enclosed by the insulation region in lateral directions perpendicular to the vertical direction, a second semiconductor electrode, made from semiconductor material of the second conductance type, which, when the other type of semiconductor electrode is embodied as emitter, is alternatively embodied as collector and vice versa, a base made from a single crystal semiconductor material of the first conductance type between the collector and the emitter and a base connector region, comprising a single crystal section which laterally surrounds the second vertical section of the first semiconductor electrode, lying further towards the substrate interior as viewed in the lateral direction from the base and resting with the underside thereof directly on the insulation layer.

4. 发明授权

EP1273043B1 CMOS-KOMPATIBLER LATERALER DMOS-TRANSISTOR 有权
标题翻译： CMOS兼容的横向DMOS晶体管
公开(公告)号：EP1273043B1
公开(公告)日：2011-06-22
申请号：EP01927619.5
申请日：2001-03-24
申请人： IHP GmbH-Innovations for High Performance Microelectronics / Leibniz-Institut für innovative Mikroelektronik
发明人： EHWALD, Karl-Ernst , HEINEMANN, Bernd , KNOLL, Dieter , WINKLER, Wolfgang
IPC分类号： H01L29/78 , H01L29/10 , H01L21/336
CPC分类号： H01L29/66659 , H01L29/0615 , H01L29/1033 , H01L29/7835
摘要： The invention relates to a CMOS-compatible lateral DMOS transistor and to a method for producing such a transistor. The aim of the invention is to provide a CMOS-compatible DMOS transistor that can be optionally designed for very high drain voltages or for the power amplification at very high frequencies by choosing the appropriate layout and that can be produced with little additional technical effort as compared to the conventional sub-νm production technology for CMOS circuits. To this end, a gate insulator of the inventive CMOS-compatible lateral DMOS transistor has a uniform thickness across the entire current-carrying (active) zone below a control gate. Below said control gate, a surface-near zone with increased dopant concentration (well region) that determines the transistor threshold voltage is disposed in such a manner that it occupies the entire area below the control gate disposed in the active zone and that it terminates within a so-called drift region between the control gate and a highly-doped drain region. The entire surface of the drift region is covered by a zone having the conductivity type of the drain region (VLDD) and being poorly doped as compared to the highly doped drain region.

5. 发明授权

EP2130214B1 SELEKTIVES WACHSTUM VON POLYKRISTALLINEM SILIZIUMHALTIGEN HALBLEITERMATERIAL AUF SILIZIUMHALTIGER HALBLEITEROBERFLÄCHE 有权转让
标题翻译：选择性生长多晶硅含半导体材料ON硅半导体表面
公开(公告)号：EP2130214B1
公开(公告)日：2013-01-02
申请号：EP08716881.1
申请日：2008-02-15
申请人： IHP GmbH-Innovations for High Performance Microelectronics / Leibniz-Institut für innovative Mikroelektronik
发明人： TILLACK, Bernd , HEINEMANN, Bernd , YAMAMOTO, Yuji
IPC分类号： H01L21/02 , H01L21/20 , C23C16/02 , C23C16/04 , C23C16/24 , C23C16/28
CPC分类号： C23C16/24 , C23C16/0272 , C23C16/04 , C23C16/28 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L21/02639

6. 发明授权

EP1212786B1 SCHICHTSTRUKTUR FÜR BIPOLARE TRANSISTOREN UND VERFAHREN ZU DEREN HERSTELLUNG 有权
标题翻译：层结构的双极晶体管和方法及其
公开(公告)号：EP1212786B1
公开(公告)日：2012-09-26
申请号：EP00958187.7
申请日：2000-07-28
申请人： IHP GmbH-Innovations for High Performance Microelectronics / Leibniz-Institut für innovative Mikroelektronik
发明人： KRÜGER, Dietmar , MORGENSTERN, Thomas , EHWALD, Karl-Ernst , BUGIEL, Eberhard , HEINEMANN, Bernd , KNOLL, Dieter , TILLACK, Bernd
IPC分类号： H01L21/205 , H01L21/331
CPC分类号： H01L29/66242 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L21/2205 , H01L29/7378

7. 发明授权

EP1116278B1 BIPOLARTRANSISTOR UND VERFAHREN ZU SEINER HERSTELLUNG 有权
标题翻译：双极晶体管及其制造方法
公开(公告)号：EP1116278B1
公开(公告)日：2012-06-13
申请号：EP99955792.9
申请日：1999-09-20
申请人： IHP GmbH-Innovations for High Performance Microelectronics / Leibniz-Institut für innovative Mikroelektronik
发明人： DREWS, Jürgen , TILLACK, Bernd , HEINEMANN, Bernd , KNOLL, Dieter
IPC分类号： H01L29/737 , H01L21/331 , H01L29/732
CPC分类号： H01L29/66287 , H01L29/66242 , H01L29/7322 , H01L29/7378
摘要： The invention relates to a bipolar transistor and a method for producing same. The aim of the invention is to provide a bipolar transistor and a method for producing same, which during the use of a single-process poly-silicon technology with differential epitaxis for the production of bases overcomes the disadvantages of conventional systems, so as notably further to improve the high-speed properties of a bipolar transistor, provide the most conductive connections possible between the metal contacts and the active (internal) transistor region as well as a minimized passive transistor surface, while at the same time avoiding greater process complexity and increased contact resistances. To this end a surface relief is produced in the active emitter region by a wet-chemical process. A single-process poly-silicon bipolar transistor having a base produced by epitaxis in accordance with the invention permits a reduction in external base resistance without causing a deterioration in emitter properties. Because the internal and external base regions are deposited continuously no interface problems arise during connection of the base. Base-collector capacity can also be lowered.

8. 发明授权

EP2100330B1 KOMPLEMENTÄRE BIPOLAR-HALBLEITERVORRICHTUNG UND HERSTELLUNGSVERFAHREN 有权转让
标题翻译：互补双极型半导体装置及方法
公开(公告)号：EP2100330B1
公开(公告)日：2012-03-07
申请号：EP07847998.7
申请日：2007-12-07
申请人： IHP GmbH-Innovations for High Performance Microelectronics / Leibniz-Institut für innovative Mikroelektronik
发明人： KNOLL, Dieter , HEINEMANN, Bernd , EHWALD, Karl-Ernst
IPC分类号： H01L21/8228 , H01L21/8249 , H01L27/06 , H01L27/082
CPC分类号： H01L27/0623 , H01L21/82285 , H01L21/8249 , H01L27/0826
摘要： Complementary bipolar semiconductor device (Cbi semiconductor device) with a substrate of a first conductivity type, active bipolar transistor regions in the substrate in which the base, emitter, and collector of vertical bipolar transistors are arranged; vertical epitaxial base npn bipolar transistors in a first subset of the active bipolar transistor regions; vertical epitaxial base pnp bipolar transistors in a second subset of the active bipolar transistor regions; collector contact regions which are each arranged bordering on an active bipolar transistor region; and flat field isolation regions which each laterally bound the active bipolar transistor regions and the collector contact regions. A flat field isolation region of a first type with a first extended depth in the direction of the substrate interior is arranged between the first or the second or both the first and the second subset of active bipolar transistor regions on one side and the adjacent collector contact regions on the other, and flat field isolation areas of a second type, with a second extended depth larger than the first, bound the active bipolar transistor regions and the collector contact regions, viewed in cross section, on the sides thereof facing away from each other.

9. 发明授权

EP1112594B1 VERTIKALER BIPOLARTRANSISTOR UND VERFAHREN ZU SEINER HERSTELLUNG 有权
标题翻译：用于制造垂直双极晶体管AND PROCESS
公开(公告)号：EP1112594B1
公开(公告)日：2010-12-01
申请号：EP99968740.3
申请日：1999-09-08
申请人： IHP GmbH-Innovations for High Performance Microelectronics / Leibniz-Institut für innovative Mikroelektronik
发明人： EHWALD, Karl-Ernst , KNOLL, Dieter , HEINEMANN, Bernd
IPC分类号： H01L29/732 , H01L29/737 , H01L29/10 , H01L21/331
CPC分类号： H01L29/66242 , H01L21/8249 , H01L29/0821 , H01L29/7378
摘要： The invention relates to a vertical bipolar transistor and a method for the production thereof. The aim of the invention is to produce a vertical bipolar transistor and to disclose a method for the production thereof, whereby excellent high frequency properties can be obtained for said transistor using the simplest possible production technology involving an implanted epitaxy-free collector and only one polysilicon layer spread over a large surface and which can be easily integrated into a conventional mainstream CMOS process without epitaxially produced trough areas. It is possible to simplify technology, while at the same time improving the high frequency parameters of vertical bipolar transistors by reducing the parasitic lateral and vertical components of the resistance of the collector, by means of a self-adjusting transistor construction in conjunction with a special method of production, whereby a highly doped monocrystalline base connection area surrounding the active base in a ring-like manner is removed in the region of the collector connection by reactive ion etching, together with the underlying less doped area of the collector or a part thereof.

10. 发明授权

EP1454359B1 BIPOLARE HALBLEITERVORRICHTUNG UND VERFAHREN ZU IHRER HERSTELLUNG 有权
标题翻译：双极型半导体装置及其制造方法
公开(公告)号：EP1454359B1
公开(公告)日：2014-07-23
申请号：EP02796562.3
申请日：2002-12-02
申请人： IHP GmbH-Innovations for High Performance Microelectronics / Leibniz-Institut für innovative Mikroelektronik
发明人： HEINEMANN, Bernd , KNOLL, Dieter , EHWALD, Karl-Ernst , RÜCKER, Holger
IPC分类号： H01L29/732 , H01L29/66 , H01L29/08 , H01L29/10
CPC分类号： H01L29/66287 , H01L29/0821 , H01L29/1004 , H01L29/7325

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式