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1. 发明申请

WO2005048304A3 STRUCTURE AND PROGRAMMING OF LASER FUSE 审中-公开
标题翻译：激光熔丝的结构与编程
公开(公告)号：WO2005048304A3
公开(公告)日：2005-07-28
申请号：PCT/US2004036660
申请日：2004-11-04
申请人： IBM , BADAMI DINESH A , LEE TOM C , LI BAOZHEN , MATUSIEWICZ GERALD , MOTSIFF WILLIAM T , MUZZY CHRISTOPHER D , WATSON KIMBALL M , WYNNE JEAN E
发明人： BADAMI DINESH A , LEE TOM C , LI BAOZHEN , MATUSIEWICZ GERALD , MOTSIFF WILLIAM T , MUZZY CHRISTOPHER D , WATSON KIMBALL M , WYNNE JEAN E
IPC分类号： H01L23/525 , H01L27/10 , H01L23/58 , H01L29/00
CPC分类号： H01L23/5258 , H01L23/525 , H01L23/5254 , H01L2924/0002 , H01L2924/00
摘要： A method and structure for fabricating a laser fuse and a method for programming the laser fuse. The laser fuse includes a first dielectric layer having two vias filled with a first self-passivated electrically conducting material. A fuse link is on top of the first dielectric layer. The fuse link electrically connects the two vias and includes a second material having a characteristic of changing its electrical resistance after being exposed to a laser beam. Two mesas are over the fuse link and directly over the two vias. The two mesas each include a third self-passivated electrically conducting material. The laser fuse is programmed by directing a laser beam to the fuse link. The laser beam is controlled such that, in response to the impact of the laser beam upon the fuse link, the electrical resistance of the fuse link changes but the fuse link is not blown off. Such electrical resistance change is sensed and converted to digital signal.
摘要翻译：用于制造激光熔丝的方法和结构以及用于编程激光熔丝的方法。激光熔丝包括具有填充有第一自钝化导电材料的两个通孔的第一介电层。熔丝连接在第一电介质层的顶部。熔断体将两个通孔电连接并且包括具有在暴露于激光束之后改变其电阻的特性的第二材料。两个台面位于熔丝链上方，直接穿过两个通孔。两个台面各自包括第三自钝化导电材料。激光熔丝通过将激光束引导到熔丝链来编程。控制激光束，使得响应于激光束对熔丝链的影响，熔丝链的电阻改变，但熔丝链不会被吹掉。这种电阻变化被检测并转换成数字信号。

2. 发明申请

WO2005038876A3 WIRING PROTECTION ELEMENT FOR LASER DELETED TUNGSTEN FUSE 审中-公开
标题翻译：用于激光去除的TUNGSTEN保险丝的接线保护元件
公开(公告)号：WO2005038876A3
公开(公告)日：2005-07-14
申请号：PCT/US2004034067
申请日：2004-10-14
申请人： IBM , MOTSIFF WILLIAM T , MUZZY CHRISTOPHER D
发明人： MOTSIFF WILLIAM T , MUZZY CHRISTOPHER D
IPC分类号： H01L23/525 , H01L27/10
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： A structure and associated method for protecting an electrical structure (25) during a fuse link deletion by focused radiation (52). The structure (1 ) comprises a fuse element (2), a protection plate (10), a first dielectric layer (14), and a second dielectric layer (4). The structure (1) is formed within a semiconductor device (5). The protection plate (10) is formed within the first dielectric layer (14) using a damascene process. The second dielectric layer (4) is formed over the protection plate (10) and the first dielectric layer (14). The fuse element (2) is formed over the second dielectric layer (4). The fuse element (2) is adapted to be cut with a laser beam (52). The dielectric constant of the second dielectric layer (4) is greater than the dielectric constant of the first dielectric layer (14). The protection plate (10) is adapted to shield the first dielectric layer (14) from energy from the laser beam (52).
摘要翻译：一种用于在通过聚焦辐射（52）的熔丝链断开期间保护电结构（25）的结构和相关方法。结构（1）包括熔丝元件（2），保护板（10），第一介电层（14）和第二电介质层（4）。结构（1）形成在半导体器件（5）内。使用镶嵌工艺在第一介电层（14）内形成保护板（10）。第二介质层（4）形成在保护板（10）和第一介电层（14）之上。熔丝元件（2）形成在第二介质层（4）上。熔丝元件（2）适于用激光束（52）切割。第二介质层（4）的介电常数大于第一介电层（14）的介电常数。保护板（10）适于屏蔽来自激光束（52）的能量的第一介电层（14）。

3. 发明申请

WO2005034200A2 ADJUSTABLE SELF-ALIGNED AIR GAP DIELECTRIC FOR LOW CAPACITANCE WIRING 审中-公开
标题翻译：可调自适应空气隙电介质用于低电容接线
公开(公告)号：WO2005034200A2
公开(公告)日：2005-04-14
申请号：PCT/US2004032404
申请日：2004-09-30
申请人： IBM , GEFFKEN ROBERT M , MOTSIFF WILLIAM T
发明人： GEFFKEN ROBERT M , MOTSIFF WILLIAM T
IPC分类号： H01L21/768 , H01L23/522 , H01L23/532 , H01L
CPC分类号： H01L21/76831 , H01L21/76811 , H01L21/7682 , H01L23/5222 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： An adjustable self aligned low capacitance integrated circuit air gap structure comprises a first interconnect (64a) adjacent a second interconnect (64b) on an interconnect level, spacers (60b, 60c) formed along adjacent sides of the first and second interconnects, and an air gap (68) formed between the first and second interconnects. The air gap extends above an upper surface (74a, 74b) of at least one of the first and second interconnects and below a lower surface (76a, 76b) of at least one of the first and second interconnects, and the distance between the spacers defines the width of the air gap. The air gap is self-aligned to the adjacent sides of the first and second interconnects.
摘要翻译：可调整的自对准低电容集成电路气隙结构包括邻近互连层上的第二互连（64b）的第一互连（64a），沿第一和第二互连的相邻侧形成的间隔物（60b，60c）间隙（68）形成在第一和第二互连之间。空气间隙延伸到第一和第二互连中的至少一个的上表面（74a，74b）上方，并且位于第一和第二互连中的至少一个互连的下表面（76a，76b）的下方以及间隔件之间的距离定义气隙的宽度。气隙与第一和第二互连的相邻侧自对准。

4. 发明申请

WO2005013330A2 CRACK STOP FOR LOW K DIELECTRICS 审中-公开
标题翻译：低K电介质的开裂停止
公开(公告)号：WO2005013330A2
公开(公告)日：2005-02-10
申请号：PCT/US2004024228
申请日：2004-07-28
申请人： IBM , DAUBENSPECK TIMOTHY H , GAMBINO JEFFREY P , LUCE STEPHEN E , MCDEVITT THOMAS J , MOTSIFF WILLIAM T , POULIOT MARK J , ROBBINS JENNIFER C
发明人： DAUBENSPECK TIMOTHY H , GAMBINO JEFFREY P , LUCE STEPHEN E , MCDEVITT THOMAS J , MOTSIFF WILLIAM T , POULIOT MARK J , ROBBINS JENNIFER C
IPC分类号： H01L20060101 , H01L21/301 , H01L21/311 , H01L21/3213 , H01L21/78 , H01L23/00 , H01L23/28 , H01L23/58 , H01L
CPC分类号： H01L23/585 , H01L21/31111 , H01L21/32134 , H01L21/76838 , H01L21/78 , H01L23/562 , H01L2924/0002 , H01L2924/00
摘要： A crack stop (28) for low K dielectric materials of an integrated circuit (IC) formed on an IC chip using metal interconnects which do not form a self-passivating oxide layer, such as copper or silver interconnects, in a low-K dielectric material to prevent damage to the active area of the IC chip caused by chipping and cracking formed along peripheral edges of the IC chip during a dicing operation. A moisture barrier or edge seal (12) is formed as a metal stack positioned along the outer peripheral edges of the active area of the IC chip. The crack stop is formed by at least one trench or groove positioned outside of the moisture barrier/edge seal on the outer periphery of the IC chip.
摘要翻译：使用金属互连在集成电路（IC）上形成集成电路（IC）的低K电介质材料的裂缝阻挡（28），所述金属互连在低K电介质中不形成自钝化氧化物层（例如铜或银互连）材料以防止在切割操作期间由于沿着IC芯片的外围边缘形成的碎裂和破裂而导致对IC芯片的有源区域的损坏。防潮层或边缘密封件（12）形成为沿着IC芯片的有效区域的外周边缘定位的金属堆叠。通过位于IC芯片的外周上的防潮/边缘密封件外侧的至少一个沟槽或槽来形成止裂件。

5. 发明公开

EP1547144A4 REDUCED SPLATTERING OF UNPASSIVATED LASER FUSES 审中-公开
标题翻译：紫外线激光喷枪BEI UNPASSIVIERTEN LASERSCHMELZVERBINDUNGEN
公开(公告)号：EP1547144A4
公开(公告)日：2009-01-07
申请号：EP03770364
申请日：2003-09-19
申请人： IBM , INFINEON TECHNOLOGIES CORP
发明人： FRIESE GERALD R , COWLEY ANDY , FAYAZ MOHAMMED F , MOTSIFF WILLIAM T
IPC分类号： H01L23/525
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： The act of blowing an unpassivated electrical fuse (for example, fuse 405) using a laser can result in the splattering of the fuse material and result in electrical short circuits. A blast barrier (for example blast barrier 406) formed around an area of the fuse that is blown by the laser helps to contain the splattering of the fuse material. The blast barrier may be formed from the same material as the fuses themselves and therefore, can be created in the same fabrication step.
摘要翻译：使用激光吹入未激活的电熔丝（例如，熔丝405）的动作可能导致熔丝材料的飞溅并导致电气短路。形成在由激光器熔断的保险丝的区域周围形成的防爆屏障（例如鼓风屏障406）有助于容纳熔丝材料的飞溅。防爆屏障可以由与熔丝本身相同的材料形成，因此可以在相同的制造步骤中形成。

6. 发明公开

EP1673809A4 WIRING PROTECTION ELEMENT FOR LASER DELETED TUNGSTEN FUSE 审中-公开
标题翻译：接线保护元件用于激光划破钨热熔连接
公开(公告)号：EP1673809A4
公开(公告)日：2009-08-26
申请号：EP04795254
申请日：2004-10-14
申请人： IBM
发明人： MOTSIFF WILLIAM T , MUZZY CHRISTOPHER D
IPC分类号： H01L27/10 , H01L23/525
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： A structure and associated method for protecting an electrical structure (25) during a fuse link deletion by focused radiation (52). The structure (1 ) comprises a fuse element (2), a protection plate (10), a first dielectric layer (14), and a second dielectric layer (4). The structure (1) is formed within a semiconductor device (5). The protection plate (10) is formed within the first dielectric layer (14) using a damascene process. The second dielectric layer (4) is formed over the protection plate (10) and the first dielectric layer (14). The fuse element (2) is formed over the second dielectric layer (4). The fuse element (2) is adapted to be cut with a laser beam (52). The dielectric constant of the second dielectric layer (4) is greater than the dielectric constant of the first dielectric layer (14). The protection plate (10) is adapted to shield the first dielectric layer (14) from energy from the laser beam (52).

7. 发明公开

EP1687851A4 STRUCTURE AND PROGRAMMING OF LASER FUSE 有权转让
标题翻译：结构和激光热熔连接编程
公开(公告)号：EP1687851A4
公开(公告)日：2011-02-23
申请号：EP04810291
申请日：2004-11-04
申请人： IBM
发明人： BADAMI DINESH A , LEE TOM C , LI BAOZHEN , MATUSIEWICZ GERALD , MOTSIFF WILLIAM T , MUZZY CHRISTOPHER D , WATSON KIMBALL M , WYNNE JEAN E
IPC分类号： H01L27/10 , H01L23/525 , H01L23/58 , H01L29/00
CPC分类号： H01L23/5258 , H01L23/525 , H01L23/5254 , H01L2924/0002 , H01L2924/00

8. 发明公开

EP1687850A4 CRACK STOP FOR LOW K DIELECTRICS 审中-公开
标题翻译： BREAK中风低k电介质
公开(公告)号：EP1687850A4
公开(公告)日：2008-06-25
申请号：EP04779326
申请日：2004-07-28
申请人： IBM
发明人： DAUBENSPECK TIMOTHY H , GAMBINO JEFFREY P , LUCE STEPHEN E , MCDEVITT THOMAS J , MOTSIFF WILLIAM T , POULIOT MARK J , ROBBINS JENNIFER C
IPC分类号： H01L23/28 , H01L20060101 , H01L21/301 , H01L21/311 , H01L21/3213 , H01L21/78 , H01L23/00 , H01L23/58
CPC分类号： H01L23/585 , H01L21/31111 , H01L21/32134 , H01L21/76838 , H01L21/78 , H01L23/562 , H01L2924/0002 , H01L2924/00
摘要： A crack stop (28) for low K dielectric materials of an integrated circuit (IC) formed on an IC chip using metal interconnects which do not form a self-passivating oxide layer, such as copper or silver interconnects, in a low-K dielectric material to prevent damage to the active area of the IC chip caused by chipping and cracking formed along peripheral edges of the IC chip during a dicing operation. A moisture barrier or edge seal (12) is formed as a metal stack positioned along the outer peripheral edges of the active area of the IC chip. The crack stop is formed by at least one trench or groove positioned outside of the moisture barrier/edge seal on the outer periphery of the IC chip.

9. 发明公开

EP1668692A4 ADJUSTABLE SELF-ALIGNED AIR GAP DIELECTRIC FOR LOW CAPACITANCE WIRING 有权
标题翻译：电介质具有可调自对准AIR GAP的接线能力低
公开(公告)号：EP1668692A4
公开(公告)日：2007-05-09
申请号：EP04809842
申请日：2004-09-30
申请人： IBM
发明人： GEFFKEN ROBERT M , MOTSIFF WILLIAM T
IPC分类号： H01L21/76 , H01L21/768 , H01L23/522 , H01L23/532 , H01L29/06
CPC分类号： H01L21/76831 , H01L21/76811 , H01L21/7682 , H01L23/5222 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： An adjustable self aligned low capacitance integrated circuit air gap structure comprises a first interconnect (64a) adjacent a second interconnect (64b) on an interconnect level, spacers (60b, 60c) formed along adjacent sides of the first and second interconnects, and an air gap (68) formed between the first and second interconnects. The air gap extends above an upper surface (74a, 74b) of at least one of the first and second interconnects and below a lower surface (76a, 76b) of at least one of the first and second interconnects, and the distance between the spacers defines the width of the air gap. The air gap is self-aligned to the adjacent sides of the first and second interconnects.

10. 发明专利

JP2005210121A Integration of high performance copper inductor with bond pad 有权
标题翻译：高性能铜电感器与BOND PAD的集成
公开(公告)号：JP2005210121A
公开(公告)日：2005-08-04
申请号：JP2005010872
申请日：2005-01-18
申请人： Internatl Business Mach Corp , インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation
发明人： JEFFREY P GANBINO , MOTSIFF WILLIAM T , ERIC G WALTON
IPC分类号： H01F41/04 , H01L21/02 , H01L21/3205 , H01L21/60 , H01L21/822 , H01L23/31 , H01L23/52 , H01L23/522 , H01L23/532 , H01L27/04
CPC分类号： H01L28/10 , H01F41/041 , H01L21/76852 , H01L21/76885 , H01L23/3192 , H01L23/5227 , H01L23/53238 , H01L24/02 , H01L2224/0401 , H01L2224/13022 , H01L2224/13147 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01044 , H01L2924/0105 , H01L2924/01055 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01327 , H01L2924/014 , H01L2924/14 , Y10T29/4902 , Y10T29/49155 , Y10T29/49165 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To integrate high performance copper inductors with global interconnects, and with either Al bond pads or Cu bond pads. SOLUTION: The integration of high performance copper inductors are conducted wherein a tall, Cu laminate spiral inductor is formed at the last metal level, and at the last metal + 1 level, with the metal levels interconnected by a bar via having the same spiral shape as the spiral metal inductors at the last metal level and the last metal + 1 level. The invention provides methods for integrating the formation of thick inductors with the formation of bond pads, terminals and interconnect wiring with the last metal + 1 wiring. The subject invention uses the dielectric deposition, spacer formation, and/or selective deposition of a passivating metal such as CoWP, to passivate a Cu inductor that is formed after the last metal layer. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：将高性能铜电感器与全局互连以及Al接合焊盘或Cu接合焊盘集成在一起。
解决方案：实现了高性能铜电感器的集成，其中在最后的金属级别形成高的Cu层压螺旋电感器，并且在最后的金属+ 1级别处，金属水平通过棒互连，与螺旋金属电感器相同的螺旋形状在最后的金属水平和最后的金属+ 1水平。本发明提供了将厚电感器的形成与最后的金属+ 1布线形成接合焊盘，端子和互连布线的方法。本发明使用诸如CoWP的钝化金属的电介质沉积，间隔物形成和/或选择性沉积来钝化在最后一个金属层之后形成的Cu电感器。版权所有（C）2005，JPO＆NCIPI

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