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    • 1. 发明授权
    • System for performing spectral analyses under computer control
    • US3751643A
    • 1973-08-07
    • US3751643D
    • 1972-05-23
    • IBM
    • DILL FKONNERTH K
    • G01B11/06G06F17/00G01B9/02G01B19/08
    • G01B11/0633G01N21/55G01N21/8422G01N2021/475G01N2021/551G01N2201/0826G01N2201/0833
    • Measurements of physical attributes such as dielectric film thickness that are susceptible to spectral analysis are accomplished rapidly and accurately by a spectrophotometric system in which a programmed digital computer operating concurrently with the optical scanning means automatically performs the calibrating, normalizing and data reducing functions that otherwise must be carried out as time-consuming human, mechanical or analog electronic operations. The control over the optical data handling operations exercised by the computer eliminates the need for mechanically or electronically adjusting the optical apparatus to meet changing system conditions, whether periodic or aperiodic. Source light is transmitted through a rotating variable-wavelength interference filter which acts during one-half of its cycle to transmit light of varying wavelength through a fiber-optic reference path directly to the optical data acquisition apparatus, while acting in the next half-cycle to transmit light of such varying wavelength indirectly to said data acquisition apparatus through a measurement path. In the present example, where film thickness is the attribute being measured, the measurement path comprises a bifurcated fiber-optic bundle, one branch of which is used to carry the light of variable wavelength to the sample, and the other branch of which carries light reflected from the sample to the aforesaid data acquisition apparatus. A computer program enables light passed through the reference path in one half-cyle to calibrate the system for measuring optical transmission or reflectance in the next half-cycle. Reduction of relative reflectance data to absolute reflectance data (needed for the accurate determination of film thickness) is accomplished by additional computer programs whose algorithms are based upon the discovery that all graphs of absolute reflectance versus wavelength for film samples of a given material having different thicknesses are bounded by a common pair of wave envelopes.
    • 3. 发明专利
    • SE315348B
    • 1969-09-29
    • SE1130063D
    • 1963-10-15
    • IBM
    • BURNS GLASHER GNATHAN MDILL FDUMKE W
    • H01S5/024H01S5/18H01S5/32H01S3/18
    • 1,045,478. Semi-conductor lasers. INTERNATIONAL BUSINESS MACHINES CORPORATION. Oct. 14, 1963 [Oct. 15, 1962], No. 40363/63. Heading H1K. [Also in Division H3] Charge carriers are injected into a body of direct band gap material at a rate sufficient to stimulate emission of radiation due to recombination of the carriers. A semi-conductor body consists of GaAs with a PN junction formed by diffusion between zinc and tellurium doped regions. A gold and antimony plated washer is attached to one side of the device and an indium contact is applied to the other side. The device is operated at low temperatures, e.g. 25‹ K or 77‹ K. Details of many such devices, and their performance, are given in the Specification, together with several modifications. In one device, cadmium replaces zinc as a dopant, a nickel washer soldered with tin being used as one contact, and an InGaAs alloy as the other. A second device uses a gold-plated MoHg washer as one contact and tin or evaporated gold as the other. A further device is undoped on one side of the junction. Other suitable semi-conductor materials include GaSb, InSb, InP, InAs and GaAs-GaP alloys. Charge carrier injection may be achieved by using a magnetic rectifier structure or a semi-conductor-metal junction instead of a PN junction.