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1. 发明授权

US07211199B2 Magnetically-and electrically-induced variable resistance materials and method for preparing same 有权
标题翻译：磁电电感材料及其制备方法
公开(公告)号：US07211199B2
公开(公告)日：2007-05-01
申请号：US10390362
申请日：2003-03-17
申请人： I-Wei Chen , Alexander Mamchik
发明人： I-Wei Chen , Alexander Mamchik
IPC分类号： G11B5/39 , H01L43/00 , H01L39/12
CPC分类号： G11C13/0007 , G11C11/5685 , G11C2213/31 , H01L43/10 , H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1608 , Y10S428/90
摘要： Provided are new compositions of ruthenates in the pervoskite and layered pervoskite family, wherein the ruthenate compositions exhibit large magnetoresistance (MR) and electric-pulse-induced resistance (EPIR) switching effects, the latter observable at room temperature. This is the first time large MR and EPIR effects have been shown together in ruthenate compositions. Further provided are methods for synthesizing the class of ruthenates that exhibits such properties, as well as methods of use therefor in electromagnetic devices, thin films, sensors, semiconductors, insulators and the like.
摘要翻译：提供的是新陈代谢物在pervoskite和分层pervoskite家族中的组合物，其中钌酸盐组合物表现出大的磁阻（MR）和电脉冲诱导电阻（EPIR）切换效应，后者可在室温下观察到。这是首次在钌酸盐组合物中一起显示出大的MR和EPIR效应。还提供了合成具有这种性质的钌酸盐类的方法，以及其在电磁装置，薄膜，传感器，半导体，绝缘体等中的使用方法。

2. 发明授权

US08652347B2 Magnetically-and electrically-induced variable resistance materials and method for preparing same 有权
标题翻译：磁电电感材料及其制备方法
公开(公告)号：US08652347B2
公开(公告)日：2014-02-18
申请号：US11789062
申请日：2007-04-23
申请人： I-Wei Chen , Alexander Mamchik
发明人： I-Wei Chen , Alexander Mamchik
IPC分类号： H01L39/12 , H01L41/16 , G11B5/39
CPC分类号： G11C13/0007 , G11C11/5685 , G11C2213/31 , H01L43/10 , H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1608 , Y10S428/90
摘要： Provided are new compositions of ruthenates in the pervoskite and layered pervoskite family, wherein the ruthenate compositions exhibit large magnetoresistance (MR) and electric-pulse-induced resistance (EPIR) switching effects, the latter observable at room temperature. This is the first time large MR and EPIR effects have been shown together in ruthenate compositions. Further provided are methods for synthesizing the class of ruthenates that exhibits such properties, as well as methods of use therefor in electromagnetic devices, thin films, sensors, semiconductors, insulators and the like.
摘要翻译：提供的是新陈代谢物在pervoskite和分层pervoskite家族中的组合物，其中钌酸盐组合物表现出大的磁阻（MR）和电脉冲诱导电阻（EPIR）切换效应，后者可在室温下观察到。这是首次在钌酸盐组合物中一起显示出大的MR和EPIR效应。还提供了合成具有这种性质的钌酸盐类的方法，以及其在电磁装置，薄膜，传感器，半导体，绝缘体等中的使用方法。

3. 发明申请

US20080174400A1 Magnetically-and electrically-induced variable resistance materials and method for preparing same 有权
标题翻译：磁电电感材料及其制备方法
公开(公告)号：US20080174400A1
公开(公告)日：2008-07-24
申请号：US11789062
申请日：2007-04-23
申请人： I-Wei Chen , Alexander Mamchik
发明人： I-Wei Chen , Alexander Mamchik
IPC分类号： H01L43/02 , B05D5/12
CPC分类号： G11C13/0007 , G11C11/5685 , G11C2213/31 , H01L43/10 , H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1608 , Y10S428/90
摘要： Provided are new compositions of ruthenates in the pervoskite and layered pervoskite family, wherein the ruthenate compositions exhibit large magnetoresistance (MR) and electric-pulse-induced resistance (EPIR) switching effects, the latter observable at room temperature. This is the first time large MR and EPIR effects have been shown together in ruthenate compositions. Further provided are methods for synthesizing the class of ruthenates that exhibits such properties, as well as methods of use therefor in electromagnetic devices, thin films, sensors, semiconductors, insulators and the like.
摘要翻译：提供的是新陈代谢物在pervoskite和分层pervoskite家族中的组合物，其中钌酸盐组合物表现出大的磁阻（MR）和电脉冲诱导电阻（EPIR）切换效应，后者可在室温下观察到。这是首次在钌酸盐组合物中一起显示出大的MR和EPIR效应。还提供了合成具有这种性质的钌酸盐类的方法，以及其在电磁装置，薄膜，传感器，半导体，绝缘体等中的使用方法。

4. 发明授权

US08361494B2 Biomimetic iron-oxide-containing lipoprotein and related materials 有权
标题翻译：含模拟氧化铁的脂蛋白及相关材料
公开(公告)号：US08361494B2
公开(公告)日：2013-01-29
申请号：US12282308
申请日：2007-03-06
申请人： I-Wei Chen , Hoon Choi
发明人： I-Wei Chen , Hoon Choi
IPC分类号： A61K9/127 , A61K49/18
CPC分类号： A61K49/1806 , A61K47/6917 , A61K49/1839 , B82Y5/00
摘要： An engineered lipoprotein including (a) a core particle or a plurality of core particles, each core particle has (i) an inner part comprising a hydrophilic active agent and a hydrophilic portion of an amphiphilic cholesterol and (ii) an outer part including a hydrophobic portion of the amphiphilic cholesterol, (b) a layer surrounding the core particle or a plurality of core particles, the layer includes a phospholipid, (c) an apoprotein associated with the layer, and optionally, (d) a homing molecule associated with at least one of the apoprotein or the phospholipid.
摘要翻译：工程化脂蛋白包括（a）核心颗粒或多个核心颗粒，每个核心颗粒具有（i）内部部分，其包含亲水性活性剂和两亲性胆固醇的亲水部分，和（ii）包含疏水性的外部部分两亲性胆固醇的部分，（b）围绕核心颗粒或多个核心颗粒的层，该层包括磷脂，（c）与该层相关的脱辅基蛋白，以及任选地，（d）至少一种脱辅基蛋白或磷脂。

5. 发明申请

US20070269683A1 NON-VOLATILE RESISTANCE-SWITCHING OXIDE THIN FILM DEVICES 有权
标题翻译：非易失性电阻切换氧化物薄膜器件
公开(公告)号：US20070269683A1
公开(公告)日：2007-11-22
申请号：US11740309
申请日：2007-04-26
申请人： I-Wei Chen , Yudi Wang , Soo Gil Kim
发明人： I-Wei Chen , Yudi Wang , Soo Gil Kim
IPC分类号： C09D1/00 , B32B19/00
CPC分类号： H01L29/0895 , C04B35/44 , C04B35/486 , C04B35/488 , C04B35/62218 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3224 , C04B2235/3227 , C04B2235/3279 , C04B2235/3289 , H01L45/10 , H01L45/1233 , H01L45/147 , H01L45/1625
摘要： Non-volatile resistance-switching oxide films, and devices therewith, are disclosed. One embodiment of a suitable device is composed of a SRO-CZO thin film having a thickness of from about 6 to about 30 nm, and composed of from about 3 to about 10 molar % of a SrRuO3 conducting oxide dopant and from about 90 to about 97 molar % of a CaZrO3 insulating oxide material.
摘要翻译：公开了非易失性电阻切换氧化膜及其装置。合适的装置的一个实施方案由厚度为约6至约30nm的SRO-CZO薄膜组成，并由约3至约10摩尔％的SrR 3 O 3导电氧化物掺杂剂和约90-约97摩尔％的CaZrO 3绝缘氧化物材料。

6. 发明申请

US20070120124A1 Resistance-switching oxide thin film devices 有权
标题翻译：电阻切换氧化物薄膜器件
公开(公告)号：US20070120124A1
公开(公告)日：2007-05-31
申请号：US11291945
申请日：2005-11-30
申请人： I-Wei Chen , Yudi Wang , Soo Gil Kim
发明人： I-Wei Chen , Yudi Wang , Soo Gil Kim
IPC分类号： H01L29/10
CPC分类号： H01L29/0895 , H01L45/10 , H01L45/1233 , H01L45/1253 , H01L45/147 , H01L45/1625
摘要： Resistance-switching oxide films, and devices therewith, are disclosed. Resistance-switching oxide films, according to certain preferred aspects of the present invention, include at least about 75 atomic percent of an insulator oxide matrix having a conducting material dopant in an amount up to about 25 atomic percent. The matrix and dopant are preferably in solid solution. The insulator oxide matrix may also preferably include about 6 to about 12 atomic percent of a conducting material dopant. According to certain aspects of the present invention, the insulator oxide matrix, the conducting material dopant, or both, may have a perovskite crystal structure. The insulator oxide matrix may preferably include at least one of LaAlO3 and CaZrO3. Preferred conducting material dopants include SrRuO3, CaRuO3, or combinations thereof.
摘要翻译：公开了电阻切换氧化物膜及其装置。根据本发明的某些优选方面的电阻切换氧化物膜包括至少约75原子％的具有高达约25原子百分比的导电材料掺杂剂的绝缘体氧化物基质。基质和掺杂剂优选为固溶体。绝缘体氧化物基质还可优选包括约6至约12原子％的导电材料掺杂剂。根据本发明的某些方面，绝缘体氧化物基质，导电材料掺杂剂或两者可以具有钙钛矿晶体结构。绝缘体氧化物基质可优选包括LaAlO 3和CaZ 3 O 3中的至少一种。优选的导电材料掺杂剂包括SrR 3 O 3，Ca 3 O 3 3或其组合。

7. 发明授权

US06303290B1 Encapsulation of biomaterials in porous glass-like matrices prepared via an aqueous colloidal sol-gel process 有权
标题翻译：通过水性胶体溶胶 - 凝胶法制备的多孔玻璃样基质中生物材料的封装
公开(公告)号：US06303290B1
公开(公告)日：2001-10-16
申请号：US09661122
申请日：2000-09-13
申请人： Dean-Mo Liu , I-Wei Chen
发明人： Dean-Mo Liu , I-Wei Chen
IPC分类号： C12Q100
CPC分类号： C12N1/04 , C12N11/14 , G01N33/552
摘要： The present invention provides a process for the encapsulation of biologically important proteins into transparent, porous silica matrices by an alcohol-free, aqueous, colloidal sol-gel process, and to the biological materials encapsulated thereby. The process is exemplified by studies involving encapsulated cytochrome c, catalase, myoglobin, and hemoglobin, although non-proteinaceous biomaterials, such as active DNA or RNA fragments, cells or even tissues, may also be encapsulated in accordance with the present methods. Conformation, and hence activity of the biomaterial, is successfully retained after encapsulation as demonstrated by optical characterization of the molecules, even after long-term storage. The retained conformation of the biomaterial is strongly correlated to both the rate of gelation and the subsequent drying speed of the encapsulatng matrix. Moreover, in accordance with this process, gelation is accelerated by the use of a higher colloidal solid concentration and a lower synthesis pH than conventional methods, thereby enhancing structural stability and retained conformation of the biomaterials. Thus, the invention also provides a remarkable improvement in retaining the biological activity of the encapsulated biomaterial, as compared with those involved in conventional alkoxide-based processes. It further provides new methods for the quantitative and qualitative detection of test substances that are reactive to, or catalyzed by, the active, encapsulated biological materials.
摘要翻译：本发明提供了一种通过无醇，水性，胶体溶胶 - 凝胶方法将生物重要蛋白质包封到透明多孔二氧化硅基质中的方法，以及由其包封的生物材料。尽管非蛋白质生物材料（例如活性DNA或RNA片段，细胞或甚至组织）也可以根据本发明的方法被包封，但该过程的例子涉及包封的细胞色素c，过氧化氢酶，肌红蛋白和血红蛋白。构象，因此生物材料的活性，在封装后成功地保留，即使在长期储存后也通过分子的光学表征证实。生物材料的保留构象与胶囊化的速率和随后的包封基质的干燥速度密切相关。此外，根据该方法，通过使用比常规方法更高的胶体固体浓度和较低的合成pH来加速凝胶化，从而增强生物材料的结构稳定性和保留的构象。因此，与常规的基于醇盐的方法相比，本发明还提供了保持包封的生物材料的生物活性的显着改进。它进一步提供了用于定量和定性检测活性包封的生物材料反应或催化的测试物质的新方法。

8. 发明授权

US5908798A In-situ toughened alpha prime-sialon-based ceramics 失效
标题翻译：原位增韧的α基硅铝比陶瓷
公开(公告)号：US5908798A
公开(公告)日：1999-06-01
申请号：US12855
申请日：1998-01-23
申请人： I-Wei Chen , Anatoly Rosenflanz
发明人： I-Wei Chen , Anatoly Rosenflanz
IPC分类号： C04B35/597 , C04B35/599
CPC分类号： C04B35/597
摘要： An in situ toughened ceramic having a relatively high proportion of an alpha prime SiAlON phase and including an elongated rod shape grain structure of that phase.
摘要翻译：具有相对高比例的α原子SiAlON相的原位增韧陶瓷，并且包括该相的细长棒状晶粒结构。

9. 发明授权

US09236118B2 Non-volatile resistance-switching thin film devices 有权
标题翻译：非易失性电阻切换薄膜器件
公开(公告)号：US09236118B2
公开(公告)日：2016-01-12
申请号：US13060514
申请日：2009-12-17
申请人： I-Wei Chen , Soo Gil Kim , Albert Chen , Yudi Wang
发明人： I-Wei Chen , Soo Gil Kim , Albert Chen , Yudi Wang
IPC分类号： H01L29/02 , H01L47/00 , G11C13/00 , H01L45/00
CPC分类号： G11C13/0002 , G11C13/0009 , G11C2213/33 , H01L45/10 , H01L45/1226 , H01L45/1233 , H01L45/14
摘要： Disclosed herein is a resistive switching device having an amorphous layer comprised of an insulating silicon-containing material and a conducting material. The amorphous layer may be disposed between two or more electrodes and be capable of switching between at least two resistance states. Circuits and memory devices including resistive switching devices are also disclosed, and a composition of matter involving an insulating silicon-containing material and a conducting material comprising between 5 and 40 percent by molar percentage of the composition is disclosed herein as well. Also disclosed herein are methods for switching the resistance of an amorphous material.
摘要翻译：本文公开了一种具有由绝缘含硅材料和导电材料构成的非晶层的电阻式开关器件。非晶层可以设置在两个或更多个电极之间，并且能够在至少两个电阻状态之间切换。还公开了包括电阻开关器件的电路和存储器件，并且还公开了包含绝缘含硅材料和包含组合物的5-40％摩尔百分数的导电材料的物质组合物。本文还公开了用于切换无定形材料的电阻的方法。

10. 发明授权

US08106375B2 Resistance-switching memory based on semiconductor composition of perovskite conductor doped perovskite insulator 有权
标题翻译：基于钙钛矿导体掺杂钙钛矿绝缘体的半导体组成的电阻切换存储器
公开(公告)号：US08106375B2
公开(公告)日：2012-01-31
申请号：US11291945
申请日：2005-11-30
申请人： I-Wei Chen , Yudi Wang , Soo Gil Kim
发明人： I-Wei Chen , Yudi Wang , Soo Gil Kim
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L29/0895 , H01L45/10 , H01L45/1233 , H01L45/1253 , H01L45/147 , H01L45/1625
摘要： Resistance-switching oxide films, and devices therewith, are disclosed. Resistance-switching oxide films, according to certain preferred aspects of the present invention, include at least about 75 atomic percent of an insulator oxide matrix having a conducting material dopant in an amount up to about 25 atomic percent. The matrix and dopant are preferably in solid solution. The insulator oxide matrix may also preferably include about 6 to about 12 atomic percent of a conducting material dopant. According to certain aspects of the present invention, the insulator oxide matrix, the conducting material dopant, or both, may have a perovskite crystal structure. The insulator oxide matrix may preferably include at least one of LaAlO3 and CaZrO3. Preferred conducting material dopants include SrRuO3, CaRuO3, or combinations thereof.
摘要翻译：公开了电阻切换氧化物膜及其装置。根据本发明的某些优选方面的电阻切换氧化物膜包括至少约75原子％的具有高达约25原子百分比的导电材料掺杂剂的绝缘体氧化物基质。基质和掺杂剂优选为固溶体。绝缘体氧化物基质还可优选包括约6至约12原子％的导电材料掺杂剂。根据本发明的某些方面，绝缘体氧化物基质，导电材料掺杂剂或两者可以具有钙钛矿晶体结构。绝缘体氧化物基质可以优选包括LaAlO 3和CaZrO 3中的至少一种。优选的导电材料掺杂剂包括SrRuO 3，CaRuO 3或其组合。

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