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1. 发明授权

US06440760B1 Method of measuring etched state of semiconductor wafer using optical impedence measurement 失效
标题翻译：使用光阻抗测量法测量半导体晶片的蚀刻状态的方法
公开(公告)号：US06440760B1
公开(公告)日：2002-08-27
申请号：US09663644
申请日：2000-09-18
申请人： Hyung-suk Cho , Sang-mun Chon , Sang-bong Choi , Chung-sam Chun , Min-sub Kang
发明人： Hyung-suk Cho , Sang-mun Chon , Sang-bong Choi , Chung-sam Chun , Min-sub Kang
IPC分类号： G01R3126
CPC分类号： G01N21/55
摘要： Embodiments of the present invention include methods for measuring a semiconductor wafer which has been subjected to an etching process. Light is radiated at the semiconductor wafer. Light within a selected wavelength band reflected from the semiconductor wafer is measured to provide an output value. A ratio of the output value and a reference value is determined. The reference value may be based on light within the selected wavelength band reflected from a reference surface, such as a bare silicon reference surface. It is determined that the semiconductor wafer is under-etched if the determined ratio does not meet the reference value. A normalized optical impedance or a polarization ratio may be measured based on light within a selected wave length band reflected from the semiconductor wafer to provide the output value in various embodiments of the present invention. In further aspects of the present invention, a thickness of a remaining oxide layer is determined using an under-etch recipe when it is determined that a semiconductor wafer is under-etched and a thickness of a damaged/polymer layer may be determined using an over-etch recipe when it is determined that the semiconductor wafer is over-etched.
摘要翻译：本发明的实施例包括用于测量经过蚀刻处理的半导体晶片的方法。光在半导体晶片上被辐射。测量从半导体晶片反射的选定波长带内的光以提供输出值。确定输出值和参考值的比率。参考值可以基于从诸如裸硅参考表面的参考表面反射的所选波长带内的光。如果确定的比率不符合参考值，则确定半导体晶片被蚀刻。可以基于从半导体晶片反射的所选波长带内的光来测量归一化的光阻抗或偏振比，以在本发明的各种实施例中提供输出值。在本发明的另外的方面，当确定半导体晶片被低蚀刻并且可以使用过度蚀刻确定损坏/聚合物层的厚度时，使用蚀刻下配方确定剩余氧化物层的厚度当确定半导体晶片被过蚀刻时，读取配方。

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