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1. 发明申请

US20060033184A1 Process and lead frame for making leadless semiconductor packages 有权
标题翻译：用于制造无引线半导体封装的工艺和引线框架
公开(公告)号：US20060033184A1
公开(公告)日：2006-02-16
申请号：US10915326
申请日：2004-08-11
申请人： Hyung Park , Hyeong Kim , Sang Park , Yong Lee , Kyung Rho , Jun Yang , Jin Won
发明人： Hyung Park , Hyeong Kim , Sang Park , Yong Lee , Kyung Rho , Jun Yang , Jin Won
IPC分类号： H01L23/495
CPC分类号： H01L23/3107 , H01L21/561 , H01L21/568 , H01L23/49548 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/97 , H01L2224/32245 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/14 , H01L2924/181 , H01L2924/30105 , H01L2224/85 , H01L2224/83 , H01L2924/00012 , H01L2924/00 , H01L2224/45015 , H01L2924/207
摘要： A process for making a plurality of leadless packages is disclosed. Firstly, chips are attached onto a lead frame with a first metal layer formed thereon. Each lead of the lead frame has a first portion, a second portion and a third portion connecting the first portion and the second portion, wherein the first metal layer is not provided on the third portion. After a wire bonding step and an encapsulating step are conducted, a second metal layer is selectively plated on the first portions and the second portions of the leads and the die pads exposed from the bottom of the molded product. Then, the third portion of each lead is selectively etched away such that the first portion and the second portion are electrically isolated from each other. Finally, a singulation step is conducted to complete the process. The present invention further provides a new lead frame design.
摘要翻译：公开了一种用于制造多个无引线封装的工艺。首先，将芯片附着在其上形成有第一金属层的引线框架上。引线框架的每个引线具有连接第一部分和第二部分的第一部分，第二部分和第三部分，其中第一金属层未设置在第三部分上。在进行引线接合步骤和封装步骤之后，选择性地将第二金属层电镀在引线的第一部分和第二部分以及从模制产品的底部露出的芯片焊盘。然后，选择性地蚀刻每个引线的第三部分，使得第一部分和第二部分彼此电隔离。最后，进行一个单独的步骤来完成这个过程。本发明还提供了一种新的引线框设计。

2. 发明授权

US10660217B2 Methods of fast fabrication of single and multilayer circuit with highly conductive interconnections without drilling 有权
公开(公告)号：US10660217B2
公开(公告)日：2020-05-19
申请号：US15993351
申请日：2018-05-30
申请人： Jun Yang , Tengyuan Zhang , Qiuquan Guo
发明人： Jun Yang , Tengyuan Zhang , Qiuquan Guo
IPC分类号： C23C18/16 , C23C18/40 , C23C18/30 , C23C18/28 , C23C18/20 , H05K3/42 , H05K1/03 , H05K3/12 , H05K1/09 , H05K3/18 , H05K3/38 , H05K1/18
摘要： Provided herein is a method to printed electronics, and more particularly related to printed electronics on flexible, porous substrates. The method includes applying a coating compound comprising poly (4-vinylpyridine) (P4VP) and SU-8 dissolved in an organic alcohol solution to one or more surface of a flexible, porous substrate, curing the porous substrate at a temperature of at least 130° C. such that the porous substrate is coated with a layer of said coating compound, printing a jet of a transition metal salt catalyst solution onto one or more printing sides of the flexible, porous substrate to deposit a transition metal salt catalyst onto the one or more printing sides, and submerging the substrate in an electroless metal deposition solution to deposit the metal on the flexible, porous substrate, wherein the deposited metal induces the formation of one or more three-dimensional metal-fiber conductive structures within the flexible, porous substrate.

3. 发明授权

US10593554B2 Method and apparatus for within-wafer profile localized tuning 有权
公开(公告)号：US10593554B2
公开(公告)日：2020-03-17
申请号：US15941839
申请日：2018-03-30
申请人： Jun Yang
发明人： Jun Yang
IPC分类号： H01L21/67 , H01L21/687 , G02F1/13 , H01L21/306 , H01L21/3105 , H01L21/683 , B24B37/10 , B24B37/005 , G05B19/418 , H01L21/66 , H01L21/02 , B24B37/20
摘要： A method and apparatus for within-wafer profile localized tuning is disclosed. In one aspect, the method includes providing a wafer attached to a rotating vacuum stage front side up, the wafer including a surface film with an incoming film thickness profile, providing a pad attached to a rotating head front side down, the head configured to sweep along a path, computing a film thickness removal amount based upon the incoming film thickness profile, and removing at least a portion of the surface film of the wafer based on the computed film thickness removal amount via a plurality of steps.

4. 发明申请

US20180226263A1 METHOD AND APPARATUS FOR WITHIN-WAFER PROFILE LOCALIZED TUNING 审中-公开
公开(公告)号：US20180226263A1
公开(公告)日：2018-08-09
申请号：US15941839
申请日：2018-03-30
申请人： Jun Yang
发明人： Jun Yang
IPC分类号： H01L21/3105 , H01L21/683 , H01L21/687 , G05B19/418 , B24B37/10 , B24B37/005
摘要： A method and apparatus for within-wafer profile localized tuning is disclosed. In one aspect, the method includes providing a wafer attached to a rotating vacuum stage front side up, the wafer including a surface film with an incoming film thickness profile, providing a pad attached to a rotating head front side down, the head configured to sweep along a path, computing a film thickness removal amount based upon the incoming film thickness profile, and removing at least a portion of the surface film of the wafer based on the computed film thickness removal amount via a plurality of steps.

5. 发明授权

US09748573B2 Mesoporous silicon compound used as lithium-ion cell negative electrode material and preparation method thereof 有权
公开(公告)号：US09748573B2
公开(公告)日：2017-08-29
申请号：US14236878
申请日：2012-08-03
申请人： Jun Yang , Pengfei Gao , Jingjun Zhang , Longjie Zhou
发明人： Jun Yang , Pengfei Gao , Jingjun Zhang , Longjie Zhou
IPC分类号： H01M4/36 , H01M4/38 , H01M4/04 , H01M4/62 , H01M4/583 , C01B33/00 , C01B33/06 , H01M4/587 , H01M4/1395 , H01M10/052
CPC分类号： H01M4/583 , C01B33/00 , C01B33/06 , H01M4/0428 , H01M4/0471 , H01M4/1395 , H01M4/364 , H01M4/366 , H01M4/386 , H01M4/587 , H01M4/625 , H01M10/052
摘要： A mesoporous silicon compound includes a mesoporous silicon phase, a metal silicide phase, and a carbon phase. The metal silicide is embedded in mesoporous silicon particles, the surfaces of which are coated with a carbon layer. A weight ratio of elemental silicon to the metal element is from 2:3 to 900:1. The pores of the mesoporous silicon particles have a size distribution from two nanometers to eighty nanometers.

6. 发明授权

US09663860B2 Silicon-carbon composite anode material for lithium ion batteries and a preparation method thereof 有权
公开(公告)号：US09663860B2
公开(公告)日：2017-05-30
申请号：US14005791
申请日：2012-03-17
申请人： Jun Yang , Pengfei Gao , Haiping Jia , Jiulin Wang , Yanna Nuli
发明人： Jun Yang , Pengfei Gao , Haiping Jia , Jiulin Wang , Yanna Nuli
IPC分类号： H01M4/36 , C23C18/12 , H01M4/133 , H01M4/134 , H01M4/1393 , H01M4/1395 , H01M10/052 , H01M4/38 , H01M4/587 , C23C16/26
CPC分类号： C23C18/1275 , C23C16/26 , H01M4/133 , H01M4/134 , H01M4/1393 , H01M4/1395 , H01M4/366 , H01M4/386 , H01M4/587 , H01M10/052
摘要： Disclosed in the invention are a silicon-carbon composite anode material for lithium ion batteries and a preparation method thereof The material consists of a porous silicon substrate and a carbon coating layer. The preparation method of the material comprises preparing a porous silicon substrate and a carbon coating layer. The silicon-carbon composite anode material for lithium ion batteries has the advantages of high reversible capacity, good cycle performance and good rate performance. The material respectively shows reversible capacities of 1,556 mAh, 1,290 mAh, 877 mAh and 474 mAh/g at 0.2 C, 1 C, 4 C and 15 C rates; the specific capacity remains above 1,500 mAh after 40 cycles at the rate of 0.2 C and the reversible capacity retention rate is up to 90 percent.

7. 发明申请

US20160353578A1 Printing Method for Fabrication of Printed Electronics 审中-公开
标题翻译：印刷电子印制方法
公开(公告)号：US20160353578A1
公开(公告)日：2016-12-01
申请号：US14552479
申请日：2014-11-24
申请人： Jun Yang
发明人： Jun Yang , Xiaolong Wang , Tengyuan Zhang , Qiuquan Guo
IPC分类号： H05K3/12 , H05K3/18
CPC分类号： H05K3/125 , H05K3/181 , H05K3/182 , H05K3/22 , H05K3/381 , H05K2201/2009 , H05K2203/0126 , H05K2203/013 , H05K2203/0709 , H05K2203/107 , H05K2203/1131 , H05K2203/1157 , H05K2203/1163 , H05K2203/1168 , H05K2203/125 , H05K2203/1355
摘要： This invention relates to fabrication of high quality printed electronics, particularly without the use of conductive inks, on various substrates by printing catalyst based inks followed by electroless deposition of metals. A method comprising substrate surface modification, preparing catalyst based inks, electroless deposition of a thick layer of metal and post-printing treatment is disclosed.
摘要翻译：本发明涉及通过印刷催化剂基油墨然后进行无电沉积金属，在各种基材上制造高质量印刷电子产品，特别是不使用导电油墨。公开了一种包括基材表面改性，制备催化剂基油墨，金属沉积金属和印后处理的方法。

8. 发明授权

US09496047B2 Memory cell and memory 有权
标题翻译：内存单元和内存
公开(公告)号：US09496047B2
公开(公告)日：2016-11-15
申请号：US14011606
申请日：2013-08-27
申请人： Jun Yang , Hwong-Kwo Lin , Hua Chen , Yong Li , Ju Shen
发明人： Jun Yang , Hwong-Kwo Lin , Hua Chen , Yong Li , Ju Shen
IPC分类号： G11C7/12 , G11C17/08 , G11C7/20
CPC分类号： G11C17/08 , G11C7/20
摘要： In various embodiments, a memory cell and a memory are provided. The memory cell comprises a Static Random Access Memory (SRAM) cell including a reset-set (RS) flip-flop and a Read Only Memory (ROM) cell being connected (or coupled) to the SRAM cell to set logic states of internal latch nodes of the RS flip-flop when the ROM cell is triggered. The size of the memory cells proposed in an embodiment of the invention is much smaller than the sum of the size of ROM cells and the size of SRAM cells with the capacity of the memory cells same as the sum of the capacity of the ROM cells and the capacity of the SRAM cells.
摘要翻译：在各种实施例中，提供存储器单元和存储器。该存储单元包括一个静态随机存取存储器（SRAM）单元，它包括复位（RS）触发器和只读存储器（ROM）单元，该单元被连接（或耦合）到SRAM单元以设置内部锁存器的逻辑状态当触发ROM单元时，RS触发器的节点。在本发明的实施例中提出的存储器单元的尺寸远小于ROM单元的尺寸和SRAM单元的尺寸的总和，其中存储器单元的容量与ROM单元的容量和 SRAM单元的容量。

9. 发明授权

US09386162B2 Systems and methods for reducing audio noise 有权
公开(公告)号：US09386162B2
公开(公告)日：2016-07-05
申请号：US13053088
申请日：2011-03-21
申请人： Jun Yang , Richard Oliver
发明人： Jun Yang , Richard Oliver
IPC分类号： H04B15/00 , H04M9/08 , G10L21/0208
CPC分类号： H04M9/08 , G10L21/0208
摘要： Various embodiments of systems and methods for reducing audio noise are disclosed. One or more sound components such as noise and network tone can be detected based on power spectrum obtained from a time-domain signal. Results of such detection can be used to make decisions in determination of an adjustment spectrum that can be applied to the power spectrum. The adjusted spectrum can be transformed back into a time-domain signal that substantially removes undesirable noise(s) and/or accounts for known sound components such as the network tone.

10. 发明授权

US09272978B2 Hydroxy acid ester compound of substituted phenol, preparation method and medical use thereof 有权
标题翻译：取代苯酚的羟基酸酯化合物，其制备方法和医疗用途
公开(公告)号：US09272978B2
公开(公告)日：2016-03-01
申请号：US13702188
申请日：2010-10-13
申请人： Wensheng Zhang , Jun Yang , Jin Liu
发明人： Wensheng Zhang , Jun Yang , Jin Liu
IPC分类号： C07C67/32 , C07C67/31 , C07C69/675 , C07C59/48
CPC分类号： C07C59/48 , C07C67/31 , C07C67/32 , C07C69/675
摘要： Hydroxy acid compound of substituted phenyl ester, preparation method and medical use thereof are provided. The title compound is shown in formula (I), Y═C1-4 straight carbon chain. The compound can release 2,6-diisopropylphenol rapidly under the action of enzymes in vivo, which has sedative, hypnotic and/or anesthetic effect. By protecting the hydroxyl group of 2, 6-diisopropylphenol in compound of formula (I), the first-pass metabolic activity of 2, 6-diisopropylphenol is reduced, so that the synthetic compound can be used for sedation, hypnosis, and/or anesthesia.
摘要翻译：提供取代苯基酯的羟基酸化合物，其制备方法和医疗用途。标题化合物如式（I）所示，Y = C1-4直碳链。该化合物可在体内酶的作用下快速释放2,6-二异丙基苯酚，其具有镇静，催眠和/或麻醉作用。通过保护式（I）化合物中2,6-二异丙基苯酚的羟基，2,6-二异丙基苯酚的首过代谢活性降低，合成化合物可用于镇静，催眠和/或麻醉。

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