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1. 发明授权

US07214620B2 Methods of forming silicide films with metal films in semiconductor devices and contacts including the same 有权
标题翻译：在半导体器件中形成具有金属膜的硅化物膜和包括其的触点的方法
公开(公告)号：US07214620B2
公开(公告)日：2007-05-08
申请号：US10974417
申请日：2004-10-27
申请人： Hyun-su Kim , Gil-heyun Choi , Jong-ho Yun , Sug-woo Jung , Eun-ji Jung , Sang-bom Kang , Woong-hee Sohn
发明人： Hyun-su Kim , Gil-heyun Choi , Jong-ho Yun , Sug-woo Jung , Eun-ji Jung , Sang-bom Kang , Woong-hee Sohn
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , H01L21/28518
摘要： A method of forming a silicide film can include forming a first metal film on a silicon substrate and forming a second metal film on the first metal film at a temperature sufficient to react a first portion of the first metal film in contact with the silicon substrate to form a metal-silicide film. The second metal film and a second portion of the first metal film can be removed so that a thin metal-silicide film remains on the silicon substrate. Then, a metal wiring film can be formed on the thin metal-silicide film and the metal wiring film can be etched.
摘要翻译：形成硅化物膜的方法可以包括在硅衬底上形成第一金属膜并在第一金属膜上形成第二金属膜，该温度足以使与第一金属膜的与硅衬底接触的第一部分反应，形成金属硅化物膜。可以去除第二金属膜和第一金属膜的第二部分，使得在硅衬底上残留有薄的金属硅化物膜。然后，可以在薄金属硅化物膜上形成金属布线膜，并且可以蚀刻金属布线膜。

2. 发明申请

US20050106859A1 Methods of forming silicide films with metal films in semiconductor devices and contacts including the same 有权
标题翻译：在半导体器件中形成具有金属膜的硅化物膜和包括其的触点的方法
公开(公告)号：US20050106859A1
公开(公告)日：2005-05-19
申请号：US10974417
申请日：2004-10-27
申请人： Hyun-su Kim , Gil-heyun Choi , Jong-ho Yun , Sug-woo Jung , Eun-ji Jung , Sang-bom Kang , Woong-hee Sohn
发明人： Hyun-su Kim , Gil-heyun Choi , Jong-ho Yun , Sug-woo Jung , Eun-ji Jung , Sang-bom Kang , Woong-hee Sohn
IPC分类号： H01L21/285 , H01L21/44 , H01L21/768
CPC分类号： H01L21/76843 , H01L21/28518
摘要： A method of forming a silicide film can include forming a first metal film on a silicon substrate and forming a second metal film on the first metal film at a temperature sufficient to react a first portion of the first metal film in contact with the silicon substrate to form a metal-silicide film. The second metal film and a second portion of the first metal film can be removed so that a thin metal-silicide film remains on the silicon substrate. Then, a metal wiring film can be formed on the thin metal-silicide film and the metal wiring film can be etched.
摘要翻译：形成硅化物膜的方法可以包括在硅衬底上形成第一金属膜并在第一金属膜上形成第二金属膜，该温度足以使与第一金属膜的与硅衬底接触的第一部分反应，形成金属硅化物膜。可以去除第二金属膜和第一金属膜的第二部分，使得在硅衬底上残留有薄的金属硅化物膜。然后，可以在薄金属硅化物膜上形成金属布线膜，并且可以蚀刻金属布线膜。

3. 发明授权

US07312150B2 Method of forming cobalt disilicide layer and method of manufacturing semiconductor device using the same 有权
标题翻译：形成二硅化钴层的方法和使用其制造半导体器件的方法
公开(公告)号：US07312150B2
公开(公告)日：2007-12-25
申请号：US10936853
申请日：2004-09-09
申请人： Jong-ho Yun , Gil-heyun Choi , Sang-bom Kang , Woong-hee Sohn , Hyun-su Kim
发明人： Jong-ho Yun , Gil-heyun Choi , Sang-bom Kang , Woong-hee Sohn , Hyun-su Kim
IPC分类号： H01L21/44
CPC分类号： H01L21/324 , H01L21/28518 , H01L21/28556 , H01L21/76889 , H01L29/665 , H01L29/78
摘要： A method of forming a cobalt disilicide layer and a method of manufacturing a semiconductor device using the same are provided. The method of forming a cobalt disilicide layer includes forming a cobalt layer on at least a silicon surface of a semiconductor device using metal organic chemical vapor deposition by supplying a cobalt precursor having a formula Co2(CO)6(R1—C≡C—R2), where R1 is H or CH3, and R2 is hydrogen, t-butyl, phenyl, methyl, or ethyl, as a source gas. Then, a capping layer is formed on the cobalt layer. A first thermal treatment is then performed on the semiconductor device in an ultra high vacuum, for example, under a pressure of 10−9-10−3 torr, to react silicon with cobalt. Cobalt unreacted during the first thermal treatment and the capping layer are then removed and a second thermal treatment is performed on the semiconductor device to form the cobalt disilicide (CoSi2) layer.
摘要翻译：提供了形成二硅化钴层的方法以及使用其制造半导体器件的方法。形成二硅化钴层的方法包括使用金属有机化学气相沉积在半导体器件的至少硅表面上形成钴层，通过提供具有式CO 2（CO）2的钴前体，（R 1-C≡CR2），其中R 1是H或CH 3， / SUB，R 2是作为源气体的氢，叔丁基，苯基，甲基或乙基。然后，在钴层上形成覆盖层。然后在超高真空下，例如在10 -9 -10 -3托的压力下，在半导体器件上进行第一热处理，以使硅与钴。然后去除在第一热处理期间未反应的钴和覆盖层，并在半导体器件上进行第二热处理以形成二硅化钴（CoSi 2 N 2）层。

4. 发明申请

US20050136659A1 Method of forming cobalt disilicide layer and method of manufacturing semiconductor device using the same 有权
标题翻译：形成二硅化钴层的方法和使用其制造半导体器件的方法
公开(公告)号：US20050136659A1
公开(公告)日：2005-06-23
申请号：US10936853
申请日：2004-09-09
申请人： Jong-ho Yun , Gil-heyun Choi , Sang-bom Kang , Woong-hee Sohn , Hyun-su Kim
发明人： Jong-ho Yun , Gil-heyun Choi , Sang-bom Kang , Woong-hee Sohn , Hyun-su Kim
IPC分类号： H01L21/24 , H01L21/285 , H01L21/324 , H01L21/336 , H01L21/44 , H01L21/4763 , H01L21/768 , H01L29/78
CPC分类号： H01L21/324 , H01L21/28518 , H01L21/28556 , H01L21/76889 , H01L29/665 , H01L29/78
摘要： A method of forming a cobalt disilicide layer and a method of manufacturing a semiconductor device using the same are provided. The method of forming a cobalt disilicide layer includes forming a cobalt layer on at least a silicon surface of a semiconductor device using metal organic chemical vapor deposition by supplying a cobalt precursor having a formula Co2(CO)6(R1—C≡C—R2), where R1 is H or CH3, and R2 is hydrogen, t-butyl, phenyl, methyl, or ethyl, as a source gas. Then, a capping layer is formed on the cobalt layer. A first thermal treatment is then performed on the semiconductor device in an ultra high vacuum, for example, under a pressure of 10−9-10−3 torr, to react silicon with cobalt. Cobalt unreacted during the first thermal treatment and the capping layer are then removed and a second thermal treatment is performed on the semiconductor device to form the cobalt disilicide (CoSi2) layer.
摘要翻译：提供了形成二硅化钴层的方法以及使用其制造半导体器件的方法。形成二硅化钴层的方法包括使用金属有机化学气相沉积在半导体器件的至少硅表面上形成钴层，通过提供具有式CO 2（CO）2的钴前体，（R 1-C≡CR2），其中R 1是H或CH 3， / SUB，R 2是作为源气体的氢，叔丁基，苯基，甲基或乙基。然后，在钴层上形成覆盖层。然后在超高真空下，例如在10 -9 -10 -3托的压力下，在半导体器件上进行第一热处理，以使硅与钴。然后去除在第一热处理期间未反应的钴和覆盖层，并在半导体器件上进行第二热处理以形成二硅化钴（CoSi 2 N 2）层。

5. 发明授权

US06458701B1 Method for forming metal layer of semiconductor device using metal halide gas 有权
标题翻译：使用金属卤化物气体形成半导体器件的金属层的方法
公开(公告)号：US06458701B1
公开(公告)日：2002-10-01
申请号：US09686622
申请日：2000-10-12
申请人： Yun-sook Chae , Sang-bom Kang , Gil-heyun Choi , In-sang Jeon
发明人： Yun-sook Chae , Sang-bom Kang , Gil-heyun Choi , In-sang Jeon
IPC分类号： C23L1608
CPC分类号： C23C16/0281 , C23C16/0218 , C23C16/14 , H01L21/28556 , H01L21/28568
摘要： A method for forming a metal layer located over a metal underlayer of a semiconductor device, using a metal halogen gas. The method involves supplying a predetermined reaction gas into a reaction chamber for a predetermined period of time prior to deposition of the metal layer. The reaction gas has a higher reactivity with an active halogen element of a metal halogen gas supplied to form the metal layer, compared to a metal element of the metal halogen gas. As the metal halogen gas is supplied into the reaction chamber, the reaction gas reacts with the halogen radicals of the metal halogen gas, so that the metal underlayer is protected from being contaminated by impurities containing the halogen radicals.
摘要翻译：一种使用金属卤素气体形成位于半导体器件的金属底层上的金属层的方法。该方法包括在沉积金属层之前将预定的反应气体提供给反应室预定的时间。与金属卤素气体的金属元素相比，反应气体与供给的金属卤素气体的活性卤素元素的反应性较高，形成金属层。当将金属卤素气体供应到反应室中时，反应气体与金属卤素气体的卤素自由基反应，从而保护金属底层免受含有卤素基团的杂质的污染。

6. 发明申请

US20050184394A1 Methods of forming a metal wiring in semiconductor devices using etch stop layers and devices so formed 有权
标题翻译：使用蚀刻停止层和如此形成的器件在半导体器件中形成金属布线的方法
公开(公告)号：US20050184394A1
公开(公告)日：2005-08-25
申请号：US11063936
申请日：2005-02-23
申请人： Sang-woo Lee , Gil-heyun Choi , Sang-bom Kang , Jong-myeong Lee , Jin-ho Park
发明人： Sang-woo Lee , Gil-heyun Choi , Sang-bom Kang , Jong-myeong Lee , Jin-ho Park
IPC分类号： H01L21/28 , H01L21/4763 , H01L21/768 , H01L23/48 , H01L29/40
CPC分类号： H01L21/76846 , H01L21/76841 , H01L21/76856 , H01L21/76877
摘要： A method of forming a metal wiring in a semiconductor device can include forming an etch stop layer outside a contact hole formed in an insulation layer and avoiding forming the etch stop layer inside the contact hole. A conductive layer can be formed on the etch stop layer outside the contact hole and on an exposed conductive pattern inside the contact hole and on a sidewall of the contact hole and a metal layer can be formed on the conductive layer to fill the contact hole.
摘要翻译：在半导体器件中形成金属布线的方法可以包括在形成在绝缘层中的接触孔之外形成蚀刻停止层，并避免在接触孔内形成蚀刻停止层。可以在接触孔外部的蚀刻停止层上形成导电层，并且在接触孔内部和接触孔的侧壁上的暴露的导电图案上形成导电层，并且可以在导电层上形成金属层以填充接触孔。

7. 发明授权

US06590251B2 Semiconductor devices having metal layers as barrier layers on upper or lower electrodes of capacitors 失效
标题翻译：在电容器的上部或下部电极上具有金属层作为阻挡层的半导体器件
公开(公告)号：US06590251B2
公开(公告)日：2003-07-08
申请号：US09911313
申请日：2001-07-23
申请人： Sang-bom Kang , Hyun-seok Lim , Yung-sook Chae , In-sang Jeon , Gil-heyun Choi
发明人： Sang-bom Kang , Hyun-seok Lim , Yung-sook Chae , In-sang Jeon , Gil-heyun Choi
IPC分类号： H01L27108
CPC分类号： C23C16/34 , C23C16/45529 , C23C16/45531 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76856 , H01L21/7687 , H01L28/75
摘要： Semiconductor films include insulating films including contact holes in semiconductor substrates, capacitors comprising lower electrodes formed on conductive material films in the contact holes, high dielectric films formed on the lower electrodes and upper electrodes formed on the high dielectric films, and barrier metal layers positioned between conductive materials in the contact holes and the lower electrodes, the barrier metal layers including metal layers formed in A-B-N structures in which a plurality of atomic layers are stacked by alternatively depositing reactive metal (A), an amorphous combination element (B) for preventing crystallization of the reactive metal (A) and nitrogen (N). The composition ratios of the barrier metal layers are determined by the number of depositions of the atomic layers.
摘要翻译：半导体膜包括在半导体衬底中包括接触孔的绝缘膜，包括形成在接触孔中的导电材料膜上的下电极的电容器，形成在下电极上的高电介质膜和形成在高电介质膜上的上电极，以及位于接触孔和下电极中的导电材料，阻挡金属层包括通过交替沉积反应性金属（A）而堆叠多个原子层的ABN结构中形成的金属层，用于防止结晶的非晶态组合元件（B）的反应性金属（A）和氮（N）。阻挡金属层的组成比由原子层的沉积数确定。

8. 发明授权

US07521357B2 Methods of forming metal wiring in semiconductor devices using etch stop layers 有权
标题翻译：使用蚀刻停止层在半导体器件中形成金属布线的方法
公开(公告)号：US07521357B2
公开(公告)日：2009-04-21
申请号：US11063936
申请日：2005-02-23
申请人： Sang-woo Lee , Gil-heyun Choi , Sang-bom Kang , Jong-myeong Lee , Jin-ho Park
发明人： Sang-woo Lee , Gil-heyun Choi , Sang-bom Kang , Jong-myeong Lee , Jin-ho Park
IPC分类号： H01L21/4763
CPC分类号： H01L21/76846 , H01L21/76841 , H01L21/76856 , H01L21/76877
摘要： A method of forming a metal wiring in a semiconductor device can include forming an etch stop layer outside a contact hole formed in an insulation layer and avoiding forming the etch stop layer inside the contact hole. A conductive layer can be formed on the etch stop layer outside the contact hole and on an exposed conductive pattern inside the contact hole and on a sidewall of the contact hole and a metal layer can be formed on the conductive layer to fill the contact hole.
摘要翻译：在半导体器件中形成金属布线的方法可以包括在形成在绝缘层中的接触孔之外形成蚀刻停止层，并避免在接触孔内形成蚀刻停止层。可以在接触孔外部的蚀刻停止层上形成导电层，并且在接触孔内部和接触孔的侧壁上的暴露的导电图案上形成导电层，并且可以在导电层上形成金属层以填充接触孔。

9. 发明授权

US06399491B2 Method of manufacturing a barrier metal layer using atomic layer deposition 有权
标题翻译：使用原子层沉积制造阻挡金属层的方法
公开(公告)号：US06399491B2
公开(公告)日：2002-06-04
申请号：US09826946
申请日：2001-04-06
申请人： In-sang Jeon , Sang-bom Kang , Hyun-seok Lim , Gil-heyun Choi
发明人： In-sang Jeon , Sang-bom Kang , Hyun-seok Lim , Gil-heyun Choi
IPC分类号： H01L2144
CPC分类号： C23C16/45531 , C23C16/45527 , H01L21/28556 , H01L21/28562 , H01L21/76841 , H01L21/76843 , H01L21/7685
摘要： A method of manufacturing a barrier metal layer uses atomic layer deposition (ALD) as the mechanism for depositing the barrier metal. The method includes supplying a first source gas onto the entire surface of a semiconductor substrate in the form of a pulse, and supplying a second source gas, which reacts with the first source gas, onto the entire surface of the semiconductor substrate in the form of a pulse. In a first embodiment, the pulses overlap in time so that the second source gas reacts with part of the first source gas physically adsorbed at the surface of the semiconductor substrate to thereby form part of the barrier metal layer by chemical vapor deposition whereas another part of the second source gas reacts with the first source gas chemically adsorbed at the surface of the semiconductor substrate to thereby form part of the barrier metal layer by atomic layer deposition. Thus, the deposition rate is greater than if the barrier metal layer were only formed by ALD. In the second embodiment, an impurity-removing gas is used to remove impurities in the barrier metal layer. Thus, even if the gas supply scheme is set up to only use ALD in creating the barrier metal layer, the deposition rate can be increased without the usual accompanying increase in the impurity content of the barrier metal layer.
摘要翻译：制造阻挡金属层的方法使用原子层沉积（ALD）作为沉积阻挡金属的机理。该方法包括以脉冲的形式将第一源气体提供到半导体衬底的整个表面上，并将与第一源气体反应的第二源气体以一脉在第一实施例中，脉冲在时间上重叠，使得第二源气体与物理吸附在半导体衬底的表面处的第一源气体的一部分反应，从而通过化学气相沉积形成阻挡金属层的一部分，而另一部分第二源气体与化学吸附在半导体衬底的表面上的第一源气体反应，从而通过原子层沉积形成阻挡金属层的一部分。因此，如果阻挡金属层仅由ALD形成，则沉积速率更大。在第二实施例中，使用杂质去除气体来除去阻挡金属层中的杂质。因此，即使将气体供给方案设定为仅使用ALD来制造阻挡金属层，也可以提高成膜速度，而不会妨碍阻挡金属层的杂质含量的增加。

10. 发明授权

US06287965B1 Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor 有权
标题翻译：使用原子层沉积形成金属层的方法和具有金属层作为阻挡金属层或电容器的上或下电极的半导体器件
公开(公告)号：US06287965B1
公开(公告)日：2001-09-11
申请号：US09511598
申请日：2000-02-23
申请人： Sang-bom Kang , Hyun-seok Lim , Yung-sook Chae , In-sang Jeon , Gil-heyun Choi
发明人： Sang-bom Kang , Hyun-seok Lim , Yung-sook Chae , In-sang Jeon , Gil-heyun Choi
IPC分类号： H01L2144
CPC分类号： H01L21/7687 , C23C16/34 , C23C16/45529 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76865 , H01L28/75
摘要： A method of forming a metal layer having excellent thermal and oxidation resistant characteristics using atomic layer deposition is provided. The metal layer includes a reactive metal (A), an element (B) for the amorphous combination between the reactive metal (A) and nitrogen (N), and nitrogen (N). The reactive metal (A) may be titanium (Ti), tantalum (Ta), tungsten (W), zirconium (Zr), hafnium (Hf), molybdenum (Mo) or niobium (Nb). The amorphous combination element (B) may be aluminum (Al), silicon (Si) or boron (B). The metal layer is formed by alternately injecting pulsed source gases for the elements (A, B and N) into a chamber according to atomic layer deposition to thereby alternately stack atomic layers. Accordingly, the composition ratio of a nitrogen compound (A—B—N) of the metal layer can be desirably adjusted just by appropriately determining the number of injection pulses of each source gas. According to the composition ratio, a desirable electrical conductivity and resistance of the metal layer can be accurately obtained. The atomic layers are individually deposited, thereby realizing excellent step coverage even in a complex and compact region. A metal layer formed by atomic layer deposition can be employed as a barrier metal layer, a lower electrode or an upper electrode in a semiconductor device.
摘要翻译：提供了使用原子层沉积形成具有优异的耐热和抗氧化特性的金属层的方法。金属层包括反应性金属（A），用于反应性金属（A）和氮（N）之间的无定形组合的元素（B）和氮（N））。反应性金属（A）可以是钛（Ti），钽（Ta），钨（W），锆（Zr），铪（Hf），钼（Mo）或铌（Nb）。无定形组合元件（B）可以是铝（Al），硅（Si）或硼（B）。通过根据原子层沉积将元件（A，B和N）的脉冲源气体交替地注入到室中来形成金属层，从而交替堆叠原子层。因此，通过适当确定各源气体的喷射脉冲数，可以适当地调整金属层的氮化合物（A-B-N）的组成比。根据组成比，可以准确地获得金属层所需的导电性和电阻。原子层分别沉积，即使在复杂和紧凑的区域中也能实现优异的阶梯覆盖。通过原子层沉积形成的金属层可以用作半导体器件中的阻挡金属层，下电极或上电极。

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