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1. 发明申请

US20110255044A1 DISPLAY DEVICE AND FABRICATION METHOD OF THE SAME 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20110255044A1
公开(公告)日：2011-10-20
申请号：US13019876
申请日：2011-02-02
申请人： Hyun-Young KIM , Joo-Sun YOON , Jin-Yup KIM
发明人： Hyun-Young KIM , Joo-Sun YOON , Jin-Yup KIM
IPC分类号： G02F1/1343
CPC分类号： H01L29/4908 , G02F1/1368 , H01L27/1255 , H01L29/42384
摘要： The embodiment relates to a display device having an improved aperture ratio and capacitance, and a fabrication method of the display device, in which the display device may include a thin film transistor, which includes: an active layer, a gate electrode, a source electrode electrically connected to the active layer, a drain electrode electrically connected to the active layer, and a gate insulating material formed between the active layer and the gate electrode, where the gate insulating material includes a first layer, a second layer and a third layer, where the second layer has a thickness between about 0.1 to about 1.5 times a thickness of the first layer, and where the third layer has a thickness between about 2 to about 12 times the thickness of the second layer.
摘要翻译：该实施例涉及具有改善的开口率和电容的显示装置，以及显示装置的制造方法，其中显示装置可以包括薄膜晶体管，其包括：有源层，栅电极，源电极电连接到有源层，电连接到有源层的漏电极和形成在有源层和栅电极之间的栅极绝缘材料，其中栅极绝缘材料包括第一层，第二层和第三层，其中所述第二层的厚度为所述第一层的厚度的约0.1至约1.5倍，并且其中所述第三层的厚度为所述第二层的厚度的约2至约12倍。

2. 发明申请

US20100045916A1 UPPER SUBSTRATE AND LIQUID CRYSTAL DISPLAY DEVICE HAVING THE SAME 有权
标题翻译：上层基板和液晶显示装置
公开(公告)号：US20100045916A1
公开(公告)日：2010-02-25
申请号：US12612974
申请日：2009-11-05
申请人： Bong-Ju KIM , Joo-Sun YOON , Yong-Ho YANG , Seung-Gyu TAE , Jin-Suk PARK , Hyun-Young KIM , Ji-Hye MOON
发明人： Bong-Ju KIM , Joo-Sun YOON , Yong-Ho YANG , Seung-Gyu TAE , Jin-Suk PARK , Hyun-Young KIM , Ji-Hye MOON
IPC分类号： G02F1/1333
CPC分类号： G02F1/13454 , G02F2001/133388 , G02F2202/42
摘要： A liquid crystal display apparatus includes a lower substrate, an upper substrate and a liquid crystal layer interposed between the lower substrate and the upper substrate. The lower substrate includes a display part for displaying image and a driving part for providing the display part with a driving signal. The upper substrate includes a common electrode and an insulating member that electrically insulates the common electrode from the driving part. The insulating member has a lower dielectric constant than the liquid crystal layer. Thus, a parasitic capacitance between the driving part and the common electrode is reduced to prevent malfunction of the driving part, and a display quality is enhanced
摘要翻译：液晶显示装置包括下基板，上基板和插入在下基板和上基板之间的液晶层。下基板包括用于显示图像的显示部分和用于向显示部分提供驱动信号的驱动部分。上基板包括公共电极和使公共电极与驱动部分电绝缘的绝缘构件。绝缘部件的介电常数比液晶层低。因此，减小驱动部和公共电极之间的寄生电容，以防止驱动部的故障，提高显示质量

3. 发明申请

US20120280223A1 OXIDE SEMICONDUCTOR DEVICES, METHODS OF MANUFACTURING OXIDE SEMICONDUCTOR DEVICES AND DISPLAY DEVICES HAVING OXIDE SEMICONDUCTOR DEVICES 审中-公开
标题翻译：氧化物半导体器件，制造氧化物半导体器件的方法和具有氧化物半导体器件的显示器件
公开(公告)号：US20120280223A1
公开(公告)日：2012-11-08
申请号：US13296609
申请日：2011-11-15
申请人： Jeong-Hwan KIM , Seong-Min WANG , Joo-Sun YOON
发明人： Jeong-Hwan KIM , Seong-Min WANG , Joo-Sun YOON
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/7869
摘要： An oxide semiconductor device may include a gate electrode formed on a substrate, and a gate insulation layer formed on the substrate to cover the gate electrode. A channel protection structure may be disposed on the gate insulation layer to expose a portion of the gate insulation layer. A source electrode may be located on a first portion of the channel protection structure. A drain electrode may be disposed on a second portion of the channel protection structure. An active pattern may be positioned on the exposed portion of the gate insulation layer, the source electrode, and the drain electrode.
摘要翻译：氧化物半导体器件可以包括形成在衬底上的栅电极和形成在衬底上以覆盖栅电极的栅极绝缘层。沟道保护结构可以设置在栅极绝缘层上以暴露栅极绝缘层的一部分。源电极可以位于沟道保护结构的第一部分上。漏电极可以设置在通道保护结构的第二部分上。有源图案可以位于栅极绝缘层，源极电极和漏极电极的暴露部分上。

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