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    • 4. 发明授权
    • Thin film transistor and method of manufacturing the same
    • 薄膜晶体管及其制造方法
    • US07868327B2
    • 2011-01-11
    • US11508530
    • 2006-08-22
    • Jae Kyeong JeongHyun Soo ShinSe Yeoul KwonYeon Gon Mo
    • Jae Kyeong JeongHyun Soo ShinSe Yeoul KwonYeon Gon Mo
    • H01L29/04
    • H01L29/78603H01L29/66757
    • A thin film transistor (TFT) and a method of manufacturing the same, and more particularly, a TFT for reducing leakage current and a method of manufacturing the same are provided. The TFT includes a flexible substrate, a diffusion preventing layer formed on the flexible substrate, a buffer layer formed of at least two insulated materials on the diffusion preventing layer, a semiconductor layer formed on a region of the buffer layer to include a channel layer and a source and drain region, a gate insulating layer formed on the buffer layer including the semiconductor layer, a gate electrode formed on the gate insulating layer in a region corresponding to the channel layer, an interlayer insulating layer formed on the gate insulating layer including the gate electrode, and source and drain electrodes formed in the interlayer insulating layer to include a predetermined contact hole that exposes at least a region of the source and drain region and to be connected to the source and drain region.
    • 提供一种薄膜晶体管(TFT)及其制造方法,更具体地说,提供了一种用于减小漏电流的TFT及其制造方法。 TFT包括柔性基板,形成在柔性基板上的扩散防止层,由扩散防止层上的至少两个绝缘材料形成的缓冲层,形成在缓冲层的包括沟道层的区域上的半导体层,以及 源极和漏极区域,形成在包括半导体层的缓冲层上的栅极绝缘层,形成在与沟道层对应的区域中的栅极绝缘层上的栅极电极,形成在栅极绝缘层上的层间绝缘层, 栅极电极和形成在层间绝缘层中的源电极和漏电极,以包括预定的接触孔,其暴露出源极和漏极区域的至少一部分并连接到源极和漏极区域。
    • 8. 发明授权
    • Thin film transistor and the manufacturing method thereof
    • 薄膜晶体管及其制造方法
    • US07655951B2
    • 2010-02-02
    • US11433177
    • 2006-05-12
    • Jae Kyeong JeongJae Bon KooHyun Soo ShinYeon Gon Mo
    • Jae Kyeong JeongJae Bon KooHyun Soo ShinYeon Gon Mo
    • H01L29/786
    • H01L29/78603H01L29/66757H01L29/78675
    • A thin film transistor and a method for manufacturing the same capable of reducing a change in a threshold voltage of the thin film transistor formed on a flexible substrate. The thin film transistor includes: a substrate, the substrate being flexible; a buffer layer having a low dielectric constant from about 1.2 to about 4.0 and formed on the substrate; a semiconductor layer formed on the buffer layer; a gate electrode; first insulation layer formed between the gate electrode and the semiconductor layer; a second insulation layer formed on the semiconductor layer and the gate electrode; and a source/drain electrode electrically connected to the semiconductor layer through a contact hole formed in the second insulation layer. Therefore, the thin film transistor can reduce a change in its threshold voltage, thereby reducing changes in brightness, gray scale, contrast, etc., of light-emitting devices using the thin film transistor.
    • 一种薄膜晶体管及其制造方法,能够减小形成在柔性基板上的薄膜晶体管的阈值电压的变化。 所述薄膜晶体管包括:基板,所述基板是柔性的; 缓冲层,其介电常数为约1.2至约4.0,并形成在基底上; 形成在缓冲层上的半导体层; 栅电极; 形成在所述栅电极和所述半导体层之间的第一绝缘层; 形成在所述半导体层和所述栅电极上的第二绝缘层; 以及源极/漏极,其通过形成在第二绝缘层中的接触孔与半导体层电连接。 因此,薄膜晶体管可以减小其阈值电压的变化,从而减少使用薄膜晶体管的发光器件的亮度,灰度,对比度等的变化。