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1. 发明授权

US08623162B2 Fabricating method of flexible display 有权
标题翻译：灵活显示的制作方法
公开(公告)号：US08623162B2
公开(公告)日：2014-01-07
申请号：US13363272
申请日：2012-01-31
申请人： Hyun Sik Seo , Seung Han Paek , Nack Bong Choi
发明人： Hyun Sik Seo , Seung Han Paek , Nack Bong Choi
IPC分类号： B29C65/52
CPC分类号： G02F1/133305 , B32B37/12 , B32B2457/20 , B32B2457/206 , C09J7/38 , C09J2201/134 , C09J2201/36 , Y10T156/1153 , Y10T428/2848
摘要： A fabricating method of a flexible display device includes forming first and second jig substrates that have a first groove and a second groove formed in a lower part of an edge of the first groove; spreading an adhesive over the second groove; fixing first and second flexible substrates to the first groove and the adhesive; fabricating an upper array substrate on the first flexible substrate and a lower array substrate on the second flexible substrate; bonding the upper array substrate to the lower array substrate and injecting a liquid crystal; and peeling the first and second flexible substrates from the first and second jig substrates.
摘要翻译：柔性显示装置的制造方法包括：形成具有形成在第一凹槽的边缘的下部中的第一凹槽和第二凹槽的第一和第二夹具基板; 在第二凹槽上铺展粘合剂; 将第一和第二柔性基板固定到第一凹槽和粘合剂; 在所述第一柔性基板上制造上阵列基板，在所述第二柔性基板上制造下阵列基板; 将上阵列基板接合到下阵列基板并注入液晶; 以及从第一和第二夹具基板剥离第一和第二柔性基板。

2. 发明授权

US08147640B2 Fabricating method of flexible display 有权
标题翻译：灵活显示的制作方法
公开(公告)号：US08147640B2
公开(公告)日：2012-04-03
申请号：US11311377
申请日：2005-12-20
申请人： Hyun Sik Seo , Seung Han Paek , Nack Bong Choi
发明人： Hyun Sik Seo , Seung Han Paek , Nack Bong Choi
IPC分类号： B29C65/50 , B29C65/76
CPC分类号： G02F1/133305 , B32B37/12 , B32B2457/20 , B32B2457/206 , C09J7/38 , C09J2201/134 , C09J2201/36 , Y10T156/1153 , Y10T428/2848
摘要： A fabricating method of a flexible display device includes the steps of providing an adhesive layer including a first adhesive material on a first surface of a support film, a second adhesive material on a second surface of the support film such that an adhesive strength of the second adhesive material is lower than an adhesive strength of the first adhesive material, and a third adhesive material encompassing an edge of the second adhesive material such that an adhesive strength of the third adhesive material is higher than the adhesive strength of the second adhesive material; a first passivation film adhered to the first surface of the support film with the first adhesive material therebetween; and a second passivation film adhered to the second surface of the support film with the second adhesive material and the third adhesive material therebetween; peeling the first passivation film from the adhesive layer; adhering a rigid substrate to the first adhesive material; peeling the second passivation film from the adhesive layer; and adhering a flexible substrate onto the second and third adhesive materials.
摘要翻译：柔性显示装置的制造方法包括以下步骤：在支撑膜的第一表面上提供包括第一粘合材料的粘合剂层，在支撑膜的第二表面上提供第二粘合材料，使得第二粘合剂的粘合强度粘合剂材料低于第一粘合剂材料的粘合强度，以及包围第二粘合材料的边缘的第三粘合剂材料，使得第三粘合剂材料的粘合强度高于第二粘合材料的粘合强度; 第一钝化膜，其粘附到所述支撑膜的第一表面上，其间具有第一粘合剂材料; 以及第二钝化膜，其中所述第二粘合剂材料和所述第三粘合剂材料粘附到所述支撑膜的所述第二表面; 从粘合剂层剥离第一钝化膜; 将刚性基材粘附到第一粘合剂材料上; 从粘合剂层剥离第二钝化膜; 并将柔性基板粘附到第二和第三粘合材料上。

3. 发明授权

US07439103B2 Organic thin film transistor, method for fabricating the same, and liquid crystal display device with the same 有权
标题翻译：有机薄膜晶体管及其制造方法以及具有该薄膜晶体管的液晶显示装置
公开(公告)号：US07439103B2
公开(公告)日：2008-10-21
申请号：US11207308
申请日：2005-08-19
申请人： Hyun Sik Seo , Dae Hyun Nam , Nack Bong Choi
发明人： Hyun Sik Seo , Dae Hyun Nam , Nack Bong Choi
IPC分类号： H01L21/335 , H01L21/8232
CPC分类号： H01L51/0545 , H01L51/0018
摘要： An organic thin film transistor and a method for fabricating the same are disclosed. The method for fabricating the organic thin film transistor includes forming a gate electrode on a substrate. A gate insulating layer is formed on an entire surface of the substrate including the gate electrode, and source and drain electrodes are formed at a predetermined interval from each other on the gate insulating layer. An organic semiconductor layer is formed on the entire surface of the substrate and a first protection layer is formed on the organic semiconductor layer. The first protection layer is patterned and the organic semiconductor layer etched using the remaining first protection layer as a mask. A second protection layer is then formed on the entire surface of the substrate.
摘要翻译：公开了一种有机薄膜晶体管及其制造方法。有机薄膜晶体管的制造方法包括在基板上形成栅电极。在包括栅电极的基板的整个表面上形成栅极绝缘层，并且在栅极绝缘层上以预定的间隔形成源极和漏极。在基板的整个表面上形成有机半导体层，在有机半导体层上形成第一保护层。图案化第一保护层，并且使用剩余的第一保护层作为掩模蚀刻有机半导体层。然后在基板的整个表面上形成第二保护层。

4. 发明授权

US07602464B2 Organic thin film transistor array substrate and fabrication method thereof 有权
标题翻译：有机薄膜晶体管阵列基板及其制造方法
公开(公告)号：US07602464B2
公开(公告)日：2009-10-13
申请号：US11599559
申请日：2006-11-14
申请人： Hyun Sik Seo , Nack Bong Choi
发明人： Hyun Sik Seo , Nack Bong Choi
IPC分类号： G02F1/1333 , G02F1/136
CPC分类号： H01L51/0018 , G02F1/1368 , H01L27/283 , H01L51/0541 , H01L51/055
摘要： An organic TFT array substrate and a fabricating method thereof are disclosed. In the organic TFT array substrate, a data line is disposed on a substrate and a gate line crosses the data line. A source electrode is connected to the data line. A drain electrode is disposed a predetermined distance from the source electrode. An organic semiconductor layer forms a channel between the source electrode and the drain electrode. An organic gate insulating film is disposed on the organic semiconductor layer with the same pattern as the organic semiconductor layer. A gate electrode overlies the organic semiconductor layer on the organic gate insulating film. A gate photo-resist pattern disposed on the gate electrode is used to form the gate electrode. A pixel electrode is connected to the drain electrode.
摘要翻译：公开了一种有机TFT阵列基板及其制造方法。在有机TFT阵列基板中，在基板上设置数据线，栅极线与数据线交叉。源电极连接到数据线。漏电极与源电极隔开规定的距离。有机半导体层在源极和漏极之间形成沟道。有机栅极绝缘膜以与有机半导体层相同的图案设置在有机半导体层上。栅电极覆盖有机栅绝缘膜上的有机半导体层。使用设置在栅极上的栅极光致抗蚀剂图案来形成栅电极。像素电极连接到漏电极。

5. 发明授权

US07820477B2 Organic thin film transistor array substrate and fabrication method thereof 有权
标题翻译：有机薄膜晶体管阵列基板及其制造方法
公开(公告)号：US07820477B2
公开(公告)日：2010-10-26
申请号：US12549032
申请日：2009-08-27
申请人： Hyun Sik Seo , Nack Bong Choi
发明人： Hyun Sik Seo , Nack Bong Choi
IPC分类号： H01L51/40 , H01L21/4763 , G02F1/136 , G02F1/1333
CPC分类号： H01L51/0018 , G02F1/1368 , H01L27/283 , H01L51/0541 , H01L51/055
摘要： An organic TFT array substrate and a fabricating method thereof are disclosed. In the organic TFT array substrate, a data line is disposed on a substrate and a gate line crosses the data line. A source electrode is connected to the data line. A drain electrode is disposed a predetermined distance from the source electrode. An organic semiconductor layer forms a channel between the source electrode and the drain electrode. An organic gate insulating film is disposed on the organic semiconductor layer with the same pattern as the organic semiconductor layer. A gate electrode overlies the organic semiconductor layer on the organic gate insulating film. A gate photo-resist pattern disposed on the gate electrode is used to form the gate electrode. A pixel electrode is connected to the drain electrode.
摘要翻译：公开了一种有机TFT阵列基板及其制造方法。在有机TFT阵列基板中，在基板上设置数据线，栅极线与数据线交叉。源电极连接到数据线。漏电极与源电极隔开规定的距离。有机半导体层在源极和漏极之间形成沟道。有机栅极绝缘膜以与有机半导体层相同的图案设置在有机半导体层上。栅电极覆盖有机栅绝缘膜上的有机半导体层。使用设置在栅极上的栅极光致抗蚀剂图案来形成栅电极。像素电极连接到漏电极。

6. 发明申请

US20070252934A1 Organic thin film transistor array substrate and fabrication method thereof 有权
标题翻译：有机薄膜晶体管阵列基板及其制造方法
公开(公告)号：US20070252934A1
公开(公告)日：2007-11-01
申请号：US11599559
申请日：2006-11-14
申请人： Hyun Sik Seo , Nack Bong Choi
发明人： Hyun Sik Seo , Nack Bong Choi
IPC分类号： G02F1/1333
CPC分类号： H01L51/0018 , G02F1/1368 , H01L27/283 , H01L51/0541 , H01L51/055
摘要： An organic TFT array substrate and a fabricating method thereof are disclosed. In the organic TFT array substrate, a data line is disposed on a substrate and a gate line crosses the data line. A source electrode is connected to the data line. A drain electrode is disposed a predetermined distance from the source electrode. An organic semiconductor layer forms a channel between the source electrode and the drain electrode. An organic gate insulating film is disposed on the organic semiconductor layer with the same pattern as the organic semiconductor layer. A gate electrode overlies the organic semiconductor layer on the organic gate insulating film. A gate photo-resist pattern disposed on the gate electrode is used to form the gate electrode. A pixel electrode is connected to the drain electrode.
摘要翻译：公开了一种有机TFT阵列基板及其制造方法。在有机TFT阵列基板中，在基板上设置数据线，栅极线与数据线交叉。源电极连接到数据线。漏电极与源电极隔开规定的距离。有机半导体层在源极和漏极之间形成沟道。有机栅极绝缘膜以与有机半导体层相同的图案设置在有机半导体层上。栅电极覆盖有机栅绝缘膜上的有机半导体层。使用设置在栅极上的栅极光致抗蚀剂图案来形成栅电极。像素电极连接到漏电极。

7. 发明申请

US20080110862A1 Manufacturing method of the flexible display device 有权
标题翻译：柔性显示装置的制造方法
公开(公告)号：US20080110862A1
公开(公告)日：2008-05-15
申请号：US11827405
申请日：2007-07-10
申请人： Chang Dong Kim , Hyun Sik Seo , Yong In Park , Seung Han Paek , Jung Jae Lee , Sang Soo Kim
发明人： Chang Dong Kim , Hyun Sik Seo , Yong In Park , Seung Han Paek , Jung Jae Lee , Sang Soo Kim
IPC分类号： B44C1/22
CPC分类号： G02F1/133305 , G02F1/167 , H01L29/78603 , H01L51/52 , H01L2251/5338
摘要： A method for manufacturing a flexible display device in which a flexible substrate is acquired by forming display devices on one side of the substrate and thinning the substrate by removing surface portions on an opposite side of the substrate. The thickness of the substrate is changed from a first thickness, which gives rigidity to the substrate to the second thickness, which gives flexibility to the substrate.
摘要翻译：一种制造柔性显示装置的方法，其中通过在基板的一侧上形成显示装置并通过去除基板的相对侧上的表面部分使基板变薄来获得柔性基板。衬底的厚度从第一厚度变化，这赋予衬底至第二厚度的刚性，这为衬底赋予柔性。

8. 发明授权

US08454851B2 Manufacturing method of the flexible display device 有权
标题翻译：柔性显示装置的制造方法
公开(公告)号：US08454851B2
公开(公告)日：2013-06-04
申请号：US11827405
申请日：2007-07-10
申请人： Chang Dong Kim , Hyun Sik Seo , Yong In Park , Seung Han Paek , Jung Jae Lee , Sang Soo Kim
发明人： Chang Dong Kim , Hyun Sik Seo , Yong In Park , Seung Han Paek , Jung Jae Lee , Sang Soo Kim
IPC分类号： C03C15/00 , H01L21/30
CPC分类号： G02F1/133305 , G02F1/167 , H01L29/78603 , H01L51/52 , H01L2251/5338
摘要： A method for manufacturing a flexible display device in which a flexible substrate is acquired by forming display devices on one side of the substrate and thinning the substrate by removing surface portions on an opposite side of the substrate. The thickness of the substrate is changed from a first thickness, which gives rigidity to the substrate to the second thickness, which gives flexibility to the substrate.
摘要翻译：一种制造柔性显示装置的方法，其中通过在基板的一侧上形成显示装置并通过去除基板的相对侧上的表面部分使基板变薄来获得柔性基板。衬底的厚度从第一厚度变化，这赋予衬底至第二厚度的刚性，这为衬底赋予柔性。

9. 发明申请

US20100203793A1 METHOD AND APPARATUS OF FORMING ALIGNMENT LAYER FOR LIQUID CRYSTAL DISPLAY DEVICE 有权
标题翻译：用于液晶显示装置的形成对准层的方法和装置
公开(公告)号：US20100203793A1
公开(公告)日：2010-08-12
申请号：US12766632
申请日：2010-04-23
申请人： Chang Dong Kim , Hyun Sik Seo , Kwang Hoon Shin
发明人： Chang Dong Kim , Hyun Sik Seo , Kwang Hoon Shin
IPC分类号： H01J9/00
CPC分类号： G02F1/133723 , G02F1/13378 , G02F2001/133765
摘要： A method for forming an alignment layer is disclosed, to prevent light leakage generated by a physical contact between a rubbing roll and a substrate, which includes preparing a substrate; coating an alignment material on the substrate, for initial alignment of liquid crystal; applying an electric field or a magnetic field to the alignment material, for determination of alignment direction in the alignment material; and curing the alignment material.
摘要翻译：公开了一种用于形成取向层的方法，以防止摩擦辊与基板之间的物理接触产生的漏光，包括制备基板; 在衬底上涂覆取向材料，用于液晶的初始取向; 对取向材料施加电场或磁场，以确定取向材料中的取向方向; 并固化对准材料。

10. 发明授权

US07407841B2 Liquid crystal display panel and method of fabricating thereof 有权
标题翻译：液晶显示面板及其制造方法
公开(公告)号：US07407841B2
公开(公告)日：2008-08-05
申请号：US11527549
申请日：2006-09-27
申请人： Hyun Sik Seo , Hae Yeol Kim
发明人： Hyun Sik Seo , Hae Yeol Kim
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： G02F1/1368 , H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L27/1288
摘要： The present invention relates to a liquid crystal display panel and a fabricating method thereof that is capable of enhancing crystallization efficiency of an active layer and simplifying the fabricating process. A fabricating method of a liquid crystal display panel includes forming a gate electrode on a substrate; forming a gate insulating film on the gate electrode formed thereon; forming an amorphous silicon film on the gate insulating film; forming an insulating pattern on the amorphous silicon film; crystallizing the amorphous silicon film into a polycrystalline silicon film using a derivative metal, the polycrystalline silicon film having source, drain and channel areas, wherein the insulating pattern overlaps the channel area of the polycrystalline silicon film; and forming source and drain electrodes on the polycrystalline silicon film, wherein the source and the drain electrodes contacting the source and drain areas of the polycrystalline silicon film, respectively.
摘要翻译：液晶显示面板及其制造方法技术领域本发明涉及能够提高有源层的结晶效率并简化制造工艺的液晶显示面板及其制造方法。液晶显示面板的制造方法包括在基板上形成栅极电极; 在其上形成的栅电极上形成栅极绝缘膜; 在栅极绝缘膜上形成非晶硅膜; 在非晶硅膜上形成绝缘图案; 使用衍生金属将非晶硅膜结晶成多晶硅膜，所述多晶硅膜具有源极，漏极和沟道区域，其中绝缘图案与多晶硅膜的沟道区域重叠; 以及在所述多晶硅膜上形成源极和漏极，其中所述源极和漏极分别与所述多晶硅膜的所述源极和漏极区域接触。

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