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1. 发明授权

US08600221B2 Writing/reading control method of HD stream 有权
标题翻译：高清流的写/读控制方法
公开(公告)号：US08600221B2
公开(公告)日：2013-12-03
申请号：US11077026
申请日：2005-03-11
申请人： Hyun Sang Park , Woo Hyun Paik , Jong Seok Park , Kang Suk Chai , Ssang Soo Lee , Jong Won Lim , Hyung Jin Kim , Il Gun Kwon , Bo Sung Kim
发明人： Hyun Sang Park , Woo Hyun Paik , Jong Seok Park , Kang Suk Chai , Ssang Soo Lee , Jong Won Lim , Hyung Jin Kim , Il Gun Kwon , Bo Sung Kim
IPC分类号： H04N5/84
CPC分类号： H04N5/85 , H04N5/765 , H04N5/781 , H04N5/913 , H04N9/8042 , H04N21/4135 , H04N21/4147 , H04N21/4334 , H04N21/4408
摘要： The present invention provides a writing/reading control method of HD stream in a DVD recorder, by which HD broadcast signals are write in a DVD medium. The present invention includes the steps of storing a plurality of HD streams in the HDD by demodulating HD broadcast signals received from a tuner/demodulator, creating a stream file in a DVD medium to record a specific one of a plurality of the HD streams stored in the HDD, recording the specific HD stream in the stream file, opening to read the HD steam file recorded in the DVD medium, buffering the read HD stream file in the HDD, and reading the buffered HD stream file using a video decoder.
摘要翻译：本发明提供一种在DVD记录器中的HD流的写入/读取控制方法，HD广播信号通过该方式在DVD介质中写入。本发明包括以下步骤：通过解调从调谐器/解调器接收的HD广播信号将多个HD流存储在HDD中，在DVD介质中创建流文件以记录存储在多个HD流中的特定的一个 HDD，将特定的HD流记录在流文件中，打开以读取记录在DVD介质中的HD Steam文件，将读取的HD流文件缓冲在HDD中，并使用视频解码器读取缓冲的HD流文件。

2. 发明申请

US20090146724A1 SWITCHING CIRCUIT FOR MILLIMETER WAVEBAND CONTROL CIRCUIT 有权
标题翻译：用于微波波形控制电路的切换电路
公开(公告)号：US20090146724A1
公开(公告)日：2009-06-11
申请号：US12139046
申请日：2008-06-13
申请人： Jae Kyoung Mun , Dong Young Kim , Jong Won Lim , Ho Kyun Ahn , Hae Cheon Kim , Hyun Kyu Yu
发明人： Jae Kyoung Mun , Dong Young Kim , Jong Won Lim , Ho Kyun Ahn , Hae Cheon Kim , Hyun Kyu Yu
IPC分类号： H03K17/06
CPC分类号： H03K17/063 , H01P1/15 , H03K17/693 , H03K2017/066
摘要： Provided is a switching circuit for a millimeter waveband control circuit. The switching circuit for a millimeter waveband control circuit includes a switching cell disposed on a signal port path to match an interested frequency and including at least one transistor coupled vertically to an input/output transmission line and a plurality of ground via holes disposed symmetrically in an upper portion and a lower portion of the input/output transmission line; capacitors for stabilizing a bias of the switching cell; and bias pads coupled in parallel to the capacitor to control the switching cell. Therefore, the switching circuit may be useful to improve its isolation by simplifying its design and layout through the use of symmetrical structure of optimized switching cells without the separate use of different switch elements, and also to reduce its manufacturing cost through the improved yield of the manufacturing process and the enhanced integration since it is possible to reduce a chip size of an integrated circuit in addition to its low insertion loss.
摘要翻译：提供了一种用于毫米波段控制电路的开关电路。毫米波段控制电路的开关电路包括设置在信号端口路径上以匹配感兴趣频率并且包括垂直于输入/输出传输线耦合的至少一个晶体管的开关单元和对称地布置在其中的多个接地通孔输入/输出传输线的上部和下部; 用于稳定开关电池的偏置的电容器; 以及与电容器并联耦合的偏置焊盘以控制开关单元。因此，切换电路可能有助于通过简化其设计和布局来改善其隔离，通过使用优化的开关电池的对称结构，而不需要分开使用不同的开关元件，并且还可以通过提高产量来提高其制造成本制造工艺和增强的集成，因为除了低插入损耗之外，可以减小集成电路的芯片尺寸。

3. 发明授权

US07387955B2 Field effect transistor and method for manufacturing the same 有权
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US07387955B2
公开(公告)日：2008-06-17
申请号：US11454721
申请日：2006-06-16
申请人： Ho Kyun Ahn , Jong Won Lim , Jae Kyoung Mun , Hong Gu Ji , Woo Jin Chang , Hea Cheon Kim
发明人： Ho Kyun Ahn , Jong Won Lim , Jae Kyoung Mun , Hong Gu Ji , Woo Jin Chang , Hea Cheon Kim
IPC分类号： H01L21/44
CPC分类号： H01L29/812 , H01L29/42316 , H01L29/66462 , H01L29/66856 , H01L29/778
摘要： A field effect transistor having a T- or Γ-shaped fine gate electrode of which a head portion is wider than a foot portion, and a method for manufacturing the field effect transistor, are provided. A void is formed between the head portion of the gate electrode and a semiconductor substrate using an insulating layer having a multi-layer structure with different etch rates. Since parasitic capacitance between the gate electrode and the semiconductor substrate is reduced by the void, the head portion of the gate electrode can be made large so that gate resistance can be reduced. In addition, since the height of the gate electrode can be adjusted by adjusting the thickness of the insulating layer, device performance as well as process uniformity and repeatability can be improved.
摘要翻译：提供具有头部比脚部宽的T形或γ形的精细栅电极的场效应晶体管，以及制造场效应晶体管的方法。使用具有不同蚀刻速率的多层结构的绝缘层，在栅电极的头部和半导体衬底之间形成空隙。由于栅电极和半导体衬底之间的寄生电容由于空隙而减小，所以能够使栅电极的头部大，能够降低栅极电阻。此外，由于可以通过调节绝缘层的厚度来调节栅电极的高度，因此可以提高器件性能以及工艺的均匀性和重复性。

4. 发明授权

US07183149B2 Method of manufacturing field effect transistor 有权
标题翻译：制造场效应晶体管的方法
公开(公告)号：US07183149B2
公开(公告)日：2007-02-27
申请号：US11180726
申请日：2005-07-14
申请人： Ho Kyun Ahn , Jong Won Lim , Hong Gu Ji , Woo Jin Chang , Jae Kyoung Mun , Hae Cheon Kim
发明人： Ho Kyun Ahn , Jong Won Lim , Hong Gu Ji , Woo Jin Chang , Jae Kyoung Mun , Hae Cheon Kim
IPC分类号： H01L21/338
CPC分类号： H01L29/66856 , H01L29/66462
摘要： Provided is a method of manufacturing a field effect transistor (FET). The method includes steps of: forming an ohmic metal layer on a substrate in source and drain regions; sequentially forming an insulating layer and a multilayered resist layer on the entire surface of the resultant structure and simultaneously forming resist patterns having respectively different shapes in both a first region excluding the ohmic metal layer and a second region excluding the ohmic metal layer, wherein a lowermost resist pattern is exposed in the first region, and the insulating layer is exposed in the second region; exposing the substrate and the insulating layer by simultaneously etching the exposed insulating layer and the exposed lowermost resist pattern using the resist patterns as etch masks, respectively; performing a recess process on the exposed substrate and etching the exposed insulating layer to expose the substrate; and forming gate recess regions having different etching depths from each other over the substrate, depositing a predetermined gate metal, and removing the resist patterns. In this method, transistors having different threshold voltages can be manufactured without additional mask patterns using the least number of processes, with the results that the cost of production can be reduced and the stability and productivity of semiconductor devices can be improved.
摘要翻译：提供了制造场效应晶体管（FET）的方法。该方法包括以下步骤：在源极和漏极区域的衬底上形成欧姆金属层; 在所得结构的整个表面上顺序地形成绝缘层和多层抗蚀剂层，并且同时形成除了欧姆金属层以外的第一区域和不包括欧姆金属层的第二区域中具有不同形状的抗蚀剂图案，其中最下面抗蚀剂图案在第一区域中暴露，并且绝缘层在第二区域中暴露; 通过分别使用抗蚀剂图案作为蚀刻掩模，同时蚀刻暴露的绝缘层和暴露的最下面的抗蚀剂图案来暴露衬底和绝缘层; 对曝光的衬底进行凹陷处理并蚀刻暴露的绝缘层以露出衬底; 以及在衬底上形成具有彼此不同蚀刻深度的栅极凹陷区域，沉积预定的栅极金属和去除抗蚀剂图案。在该方法中，可以使用最少数量的工艺来制造具有不同阈值电压的晶体管，而不需要额外的掩模图案，结果可以降低生产成本，并且可以提高半导体器件的稳定性和生产率。

5. 发明授权

US08053689B2 Communication terminal having housing with key buttons coupled thereto 有权
标题翻译：具有壳体的通信终端具有与其耦合的按键
公开(公告)号：US08053689B2
公开(公告)日：2011-11-08
申请号：US12409720
申请日：2009-03-24
申请人： Tae Hyun Kim , Kyung Soo Ji , Jong Won Lim
发明人： Tae Hyun Kim , Kyung Soo Ji , Jong Won Lim
IPC分类号： H01H13/70
CPC分类号： H04M1/23 , H01H2221/016 , H01H2221/044
摘要： A communication terminal including a housing having elastic key buttons integrally coupled thereto is provided. The housing is configured to define an external appearance of the communication terminal. Each of the key buttons may have one end thereof integrally coupled to the housing and a free end at an opposite end thereof. A plurality of key-input switches may be respectively positioned beneath each key button. Each of the key-input switches may detect a corresponding key-input when the free end of the key button is brought into contact with the key-input switch.
摘要翻译：提供一种通信终端，其包括具有与其一体耦合的弹性键按钮的壳体。壳体被配置为限定通信终端的外观。每个按键可以将其一端整体地联接到外壳上，在其相对端具有自由端。多个按键输入开关可以分别位于每个键按钮的下方。当键按钮的自由端与键输入开关接触时，每个键输入开关可以检测相应的键输入。

6. 发明授权

US07671697B2 High-isolation switching device for millimeter-wave band control circuit 有权
标题翻译：用于毫米波段控制电路的高隔离开关装置
公开(公告)号：US07671697B2
公开(公告)日：2010-03-02
申请号：US11928410
申请日：2007-10-30
申请人： Jae Kyoung Mun , Hae Cheon Kim , Dong Young Kim , Jong Won Lim , Ho Kyun Ahn , Hyun Kyu Yu
发明人： Jae Kyoung Mun , Hae Cheon Kim , Dong Young Kim , Jong Won Lim , Ho Kyun Ahn , Hyun Kyu Yu
IPC分类号： H01P1/10 , H01L29/80
CPC分类号： H01P1/15
摘要： Provided is a high-isolation switching device for a millimeter-wave band control circuit. By optimizing a cell structure to improve the isolation of an off-state without deteriorating the insertion loss of an on-state, it is possible to implement a high-isolation switching device useful in the design and manufacture of a millimeter-wave band control circuit such as a phase shifter or digital attenuator using switching characteristics. In addition, when a switch microwave monolithic integrated circuit (MMIC) is designed to use the switching device, it is not necessary to use a multi-stage shunt field effect transistor (FET) to improve isolation, nor to dispose an additional λ/4 transformer transmission line, inductor or capacitor near the switching device. Thus, chip size can be reduced, degree of integration can be enhanced, and manufacturing yield can be increased. Consequently, it is possible to reduce manufacturing cost.
摘要翻译：提供了一种用于毫米波段控制电路的高隔离开关装置。通过优化单元结构以改善断开状态的隔离而不会导致导通状态的插入损耗的恶化，可以实现用于设计和制造毫米波段控制电路的高隔离开关装置例如使用开关特性的移相器或数字衰减器。另外，当开关微波单片集成电路（MMIC）设计为使用开关器件时，不需要使用多级并联场效应晶体管（FET）来改善隔离度，也不需要设置额外的λ/ 4 变压器输电线路，电感器或电容器附近的开关装置。因此，可以降低芯片尺寸，可以提高集成度，并且可以提高制造成品率。因此，可以降低制造成本。

7. 发明申请

US20080129427A1 HIGH-ISOLATION SWITCHING DEVICE FOR MILLIMETER-WAVE BAND CONTROL CIRCUIT 有权
标题翻译：用于微波波段控制电路的高隔离开关装置
公开(公告)号：US20080129427A1
公开(公告)日：2008-06-05
申请号：US11928410
申请日：2007-10-30
申请人： Jae Kyoung MUN , Hae Cheon Kim , Dong Young Kim , Jong Won Lim , Ho Kyun Ahn , Hyun Kyu Yu
发明人： Jae Kyoung MUN , Hae Cheon Kim , Dong Young Kim , Jong Won Lim , Ho Kyun Ahn , Hyun Kyu Yu
IPC分类号： H01P1/10
CPC分类号： H01P1/15
摘要： Provided is a high-isolation switching device for a millimeter-wave band control circuit. By optimizing a cell structure to improve the isolation of an off-state without deteriorating the insertion loss of an on-state, it is possible to implement a high-isolation switching device useful in the design and manufacture of a millimeter-wave band control circuit such as a phase shifter or digital attenuator using switching characteristics. In addition, when a switch microwave monolithic integrated circuit (MMIC) is designed to use the switching device, it is not necessary to use a multi-stage shunt field effect transistor (FET) to improve isolation, nor to dispose an additional λ/4 transformer transmission line, inductor or capacitor near the switching device. Thus, chip size can be reduced, degree of integration can be enhanced, and manufacturing yield can be increased. Consequently, it is possible to reduce manufacturing cost.
摘要翻译：提供了一种用于毫米波段控制电路的高隔离开关装置。通过优化单元结构以改善断开状态的隔离而不会导致导通状态的插入损耗的恶化，可以实现用于设计和制造毫米波段控制电路的高隔离开关装置例如使用开关特性的移相器或数字衰减器。另外，当开关微波单片集成电路（MMIC）被设计为使用开关器件时，不需要使用多级并联场效应晶体管（FET）来改善隔离度，也不需要配置额外的λ/ 4 变压器输电线路，电感器或电容器附近的开关装置。因此，可以降低芯片尺寸，可以提高集成度，并且可以提高制造成品率。因此，可以降低制造成本。

8. 发明申请

US20080124852A1 Method of forming T- or gamma-shaped electrode 审中-公开
标题翻译：形成T形或γ形电极的方法
公开(公告)号：US20080124852A1
公开(公告)日：2008-05-29
申请号：US11605508
申请日：2006-11-28
申请人： Ho Kyun Ahn , Jong Won Lim , Jae Kyoung Mun , Woo Jin Chang , Hong Gu Ji , Hae Cheon Kim
发明人： Ho Kyun Ahn , Jong Won Lim , Jae Kyoung Mun , Woo Jin Chang , Hong Gu Ji , Hae Cheon Kim
IPC分类号： H01L21/338
CPC分类号： H01L29/4232 , H01L21/28587 , H01L21/28593
摘要： A method of forming a fine T- or gamma-shaped gate electrode is provided, which is performed by a lithography process using a multi-layered photoresist layer having various sensitivities, deposition of an insulating layer, and an etching process. The method includes: a first step of depositing a first insulating layer on a semiconductor substrate; a second step of coating at least two photoresist layers with different sensitivities from each other on the first insulating layer, and patterning the photoresist layers to have openings which are different in size; a third step of etching the first insulating layer using the photoresist layers as etch masks to form a step hole in which a part contacting the substrate is narrower than an upper part thereof, and removing the photoresist layers; a fourth step of forming a photoresist layer on the first insulating layer, and forming an opening in the photoresist layer to have a T- or gamma-shaped gate head pattern; a fifth step of performing a gate recess process with respect to the gate pattern; and a sixth step of depositing a gate metal on the gate pattern, and removing the photoresist layers.
摘要翻译：提供了一种通过使用具有各种灵敏度的多层光致抗蚀剂层，沉积绝缘层和蚀刻工艺的光刻工艺来形成精细的T形或γ形栅电极的方法。该方法包括：在半导体衬底上沉积第一绝缘层的第一步骤; 在所述第一绝缘层上涂覆彼此具有不同灵敏度的至少两个光致抗蚀剂层的第二步骤，以及使所述光致抗蚀剂层图案化以具有尺寸不同的开口; 使用光致抗蚀剂层作为蚀刻掩模来蚀刻第一绝缘层以形成步骤孔的第三步骤，其中与衬底接触的部分比其上部更窄，并且去除光致抗蚀剂层; 在所述第一绝缘层上形成光致抗蚀剂层，以及在所述光致抗蚀剂层中形成具有T形或γ形门头图案的开口的第四步骤; 执行相对于栅极图案的栅极凹槽工艺的第五步骤; 以及在栅极图案上沉积栅极金属和去除光致抗蚀剂层的第六步骤。

9. 发明授权

US07973368B2 Semiconductor device with T-gate electrode 失效
标题翻译：具有T型栅电极的半导体器件
公开(公告)号：US07973368B2
公开(公告)日：2011-07-05
申请号：US12122982
申请日：2008-05-19
申请人： Jong Won Lim , Ho Kyun Ahn , Hong Gu Ji , Woo Jin Chang , Jae Kyoung Mun , Hae Cheon Kim , Hyun Kyu Yu
发明人： Jong Won Lim , Ho Kyun Ahn , Hong Gu Ji , Woo Jin Chang , Jae Kyoung Mun , Hae Cheon Kim , Hyun Kyu Yu
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/778 , H01L29/20 , H01L29/42316 , H01L29/66462
摘要： Provided are a semiconductor device with a T-gate electrode capable of improving stability and a high frequency characteristic of the semiconductor device by reducing source resistance, parasitic capacitance, and gate resistance and a method of fabricating the same. In the semiconductor device, in order to form source and drain electrodes and the T-gate electrode on a substrate, first and second protective layers constructed with silicon oxide layers or silicon nitride layers are formed on sides of a supporting part under a head part of the T-gate electrode, and the second protective layer constructed with a silicon oxide layer or silicon nitride layer is formed on sides of the source and drain electrodes. Accordingly, it is possible to protect an activated region of the semiconductor device and reduce gate-drain parasitic capacitance and gate-source parasitic capacitance.
摘要翻译：提供一种具有T栅电极的半导体器件及其制造方法，该半导体器件能够通过降低源极电阻，寄生电容和栅极电阻来提高半导体器件的稳定性和高频特性。在半导体器件中，为了在衬底上形成源电极和漏电极以及T栅电极，在氧化硅层或氮化硅层构成的第一和第二保护层形成在支撑部分的头部在栅电极和漏电极的侧面上形成T形栅电极和由氧化硅层或氮化硅层构成的第二保护层。因此，可以保护半导体器件的激活区域并减小栅极 - 漏极寄生电容和栅极 - 源极寄生电容。

10. 发明授权

US07902572B2 Field effect transistor and method for manufacturing the same 有权
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US07902572B2
公开(公告)日：2011-03-08
申请号：US12122805
申请日：2008-05-19
申请人： Ho Kyun Ahn , Jong Won Lim , Jae Kyoung Mun , Hong Gu Ji , Woo Jin Chang , Hea Cheon Kim
发明人： Ho Kyun Ahn , Jong Won Lim , Jae Kyoung Mun , Hong Gu Ji , Woo Jin Chang , Hea Cheon Kim
IPC分类号： H01L31/072
CPC分类号： H01L29/812 , H01L29/42316 , H01L29/66462 , H01L29/66856 , H01L29/778
摘要： A field effect transistor having a T- or Γ-shaped fine gate electrode of which a head portion is wider than a foot portion, and a method for manufacturing the field effect transistor, are provided. A void is formed between the head portion of the gate electrode and a semiconductor substrate using an insulating layer having a multi-layer structure with different etch rates. Since parasitic capacitance between the gate electrode and the semiconductor substrate is reduced by the void, the head portion of the gate electrode can be made large so that gate resistance can be reduced. In addition, since the height of the gate electrode can be adjusted by adjusting the thickness of the insulating layer, device performance as well as process uniformity and repeatability can be improved.
摘要翻译：提供了具有头部比脚部宽的T形或/或G字形精细栅电极的场效应晶体管，以及制造场效应晶体管的方法。使用具有不同蚀刻速率的多层结构的绝缘层，在栅电极的头部和半导体衬底之间形成空隙。由于栅电极和半导体衬底之间的寄生电容由于空隙而减小，所以能够使栅电极的头部大，能够降低栅极电阻。此外，由于可以通过调节绝缘层的厚度来调节栅电极的高度，因此可以提高器件性能以及工艺的均匀性和重复性。

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