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1. 发明申请

US20060289858A1 Organic thin film transistor(s) and method(s) for fabricating the same 有权
公开(公告)号：US20060289858A1
公开(公告)日：2006-12-28
申请号：US11297396
申请日：2005-12-09
申请人： Hyun Park , Sang Lee , Eun Jeong , Kook Han , Jung Hahn , Tae Lee
发明人： Hyun Park , Sang Lee , Eun Jeong , Kook Han , Jung Hahn , Tae Lee
IPC分类号： H01L51/00 , H01L51/40
CPC分类号： H01L51/105 , H01L51/0055 , H01L51/052
摘要： Example embodiments of the present invention for fabricating an organic thin film transistor including a substrate, a gate electrode, a gate insulating layer, metal oxide source/drain electrodes and an organic semiconductor layer wherein the metal oxide source/drain electrodes are surface-treated with a self-assembled monolayer (SAM) forming compound containing a sulfonic acid group. According to example embodiments of the present invention, the surface of the source/drain electrodes may be modified to be more hydrophobic and/or the work function of a metal oxide constituting the source/drain electrodes may be increased to above that of an organic semiconductor material constituting the organic semiconductor layer. Organic thin film transistors fabricated according to one or more example embodiments of the present invention may exhibit higher charge carrier mobility. Also disclosed are various example devices including display devices having organic thin film transistors made by example embodiments of the present invention.

2. 发明申请

US20060006379A1 Organic semiconductor copolymers containing oligothiophene and n-type heteroaromatic units 有权
标题翻译：含有低聚噻吩和n型杂芳族单元的有机半导体共聚物
公开(公告)号：US20060006379A1
公开(公告)日：2006-01-12
申请号：US11073691
申请日：2005-03-08
申请人： Bang Lee , Kook Han , Jung Shin , Sang Lee , Eun Jeong
发明人： Bang Lee , Kook Han , Jung Shin , Sang Lee , Eun Jeong
IPC分类号： H01L29/08 , C08G75/00
CPC分类号： H01L51/0043 , H01L51/0036 , H01L51/0512 , Y10T428/31533
摘要： An exemplary organic semiconductor copolymer includes a polymeric repeat structure having a polythiophene structure and an electron accepting unit. The electron accepting unit has at least one electron-accepting heteroaromatic structure with at least one electron-withdrawing imine nitrogen in the heteroaromatic structure or a thiophene-arylene comprising a C2-30 heteroaromatic structure. Methods of synthesis and electronic devices incorporating the disclosed organic semiconductors, e.g., as a channel layer, are also disclosed.
摘要翻译：示例性的有机半导体共聚物包括具有聚噻吩结构的聚合物重复结构和电子接受单元。电子接受单元具有在杂芳族结构中具有至少一个吸电子亚胺氮的至少一个电子接受性杂芳族结构或包含C 2〜2-30杂芳族结构的噻吩 - 亚芳基。还公开了合成方法和结合所公开的有机半导体的电子器件，例如作为沟道层。

3. 发明申请

US20060081839A1 Oligothiophene-arylene derivatives and organic thin film transistors using the same 有权
公开(公告)号：US20060081839A1
公开(公告)日：2006-04-20
申请号：US11084794
申请日：2005-03-21
申请人： Eun Jeong , Chang Kim , Bang Lee , Sang Lee , Kook Han
发明人： Eun Jeong , Chang Kim , Bang Lee , Sang Lee , Kook Han
IPC分类号： H01L29/08 , C08G75/00
CPC分类号： H01L51/0068 , C08G61/12 , C08G61/126 , H01L51/0036 , H01L51/0072 , H01L51/0545
摘要： An oligothiophene-arylene derivative wherein an arylene having n-type semiconductor characteristics is introduced into an oligothiophene having p-type semiconductor characteristics, thereby simultaneously exhibiting both p-type and n-type semiconductor characteristics. Further, an organic thin film transistor using the oligothiophene-arylene derivative.

4. 发明申请

US20060128083A1 Method for fabricating organic thin film transistor 有权
标题翻译：制造有机薄膜晶体管的方法
公开(公告)号：US20060128083A1
公开(公告)日：2006-06-15
申请号：US11123120
申请日：2005-05-06
申请人： Hyun Park , Bon Koo , Joo Kim , Jung Shin , Eun Jeong , Sang Lee
发明人： Hyun Park , Bon Koo , Joo Kim , Jung Shin , Eun Jeong , Sang Lee
IPC分类号： H01L21/8234
CPC分类号： H01L51/0529 , H01L51/0036 , H01L51/0052 , H01L51/0078 , H01L51/052 , H01L51/105
摘要： Disclosed herein is a method for fabricating an organic thin film transistor comprising a gate electrode, a gate insulating film, source/drain electrodes and an organic semiconductor layer formed in this order on a substrate wherein the surface of the gate insulating film on which source/drain electrodes are formed is impregnated with an inorganic or organic acid, followed by annealing. According to the method, the surface of a gate insulating film damaged by a photoresist process can be effectively recovered. In addition, organic thin film transistors having high charge carrier mobility and high on/off current ratio can be fabricated.
摘要翻译：本文公开了一种制造有机薄膜晶体管的方法，其包括在基板上依次形成的栅电极，栅极绝缘膜，源极/漏极和有机半导体层，其中栅极绝缘膜的表面上的源极/ 形成漏电极用无机酸或有机酸浸渍，然后进行退火。根据该方法，可以有效地回收由光刻胶工艺损坏的栅极绝缘膜的表面。此外，可以制造具有高电荷载流子迁移率和高导通/截止电流比的有机薄膜晶体管。

5. 发明申请

US20060113527A1 Star-shaped oligothiophene-arylene derivatives and organic thin film transistors using the same 有权
标题翻译：星形低聚噻吩 - 亚芳基衍生物和使用其的有机薄膜晶体管
公开(公告)号：US20060113527A1
公开(公告)日：2006-06-01
申请号：US11116326
申请日：2005-04-28
申请人： Kook Han , Eun Jeong , Chang Kim , Eun Lee
发明人： Kook Han , Eun Jeong , Chang Kim , Eun Lee
IPC分类号： H01L51/00 , H01B1/12
CPC分类号： H01L51/0068 , H01L51/0036 , H01L51/0052 , H01L51/0062 , H01L51/0067 , H01L51/0069 , H01L51/007 , H01L51/0071 , H01L51/0072 , H01L51/0545
摘要： A star-shaped oligothiophene-arylene derivative in which an oligothiophene having p-type semiconductor characteristics is bonded to an arylene having n-type semiconductor characteristics positioned in the central moiety of the molecule and forms a star shape with the arylene, thereby simultaneously exhibiting both p-type and n-type semiconductor characteristics. Further, an organic thin film transistor using the oligothiophene-arylene derivative. The star-shaped oligothiophene-arylene derivative can be spin-coated at room temperature, leading to the fabrication of organic thin film transistors simultaneously satisfying the requirements of high charge carrier mobility and low off-state leakage current.
摘要翻译：具有p型半导体特性的低聚噻吩与具有位于分子的中心部分的n型半导体特性的亚芳基键合并形成具有亚芳基的星形的星形低聚噻吩 - 亚芳基衍生物，从而同时显示两者 p型和n型半导体特性。另外，使用低聚噻吩 - 亚芳基衍生物的有机薄膜晶体管。星形低聚噻吩 - 亚芳基衍生物可在室温下旋涂，导致同时满足高电荷载流子迁移率和低截止状态漏电流要求的有机薄膜晶体管的制造。

6. 发明申请

US20070120120A1 Aromatic enediyne derivatives, organic semiconductor thin films using the same and manufacturing methods thereof, and electronic devices incorporating such films 有权
标题翻译：芳香族烯衍生物，使用该衍生物的有机半导体薄膜及其制造方法以及包含这种膜的电子器件
公开(公告)号：US20070120120A1
公开(公告)日：2007-05-31
申请号：US11583085
申请日：2006-10-19
申请人： Eun Jeong , Hyun Moon , Kook Han
发明人： Eun Jeong , Hyun Moon , Kook Han
IPC分类号： H01L51/00 , C07D409/14 , C07D333/28
CPC分类号： H01L51/0545 , C07D333/18 , H01L51/0003 , H01L51/0068 , Y02E10/549 , Y02P70/521
摘要： Disclosed are aromatic enediyne derivatives, methods of manufacturing organic semiconductor thin films from such aromatic enediyne derivatives, and methods of fabricating electronic devices incorporating such organic semiconductor thin films. Aromatic enediyne derivatives according to example embodiments provide improved chemical and/or electrical stability which may improve the reliability of the resulting semiconductor devices. Aromatic enediyne derivatives according to example embodiments may also be suitable for deposition on various substrates via solution-based processes, for example, spin coating, at temperatures at or near room temperature to form a coating film that is then heated to form an organic semiconductor thin film. The availability of this reduced temperature processing allows the use of the aromatic enediynes derivatives on large substrate surfaces and/or on substrates not suitable for higher temperature processing. Accordingly, the organic semiconductor thin films according to example embodiments may be incorporated in thin film transistors, electroluminescent devices, solar cells, and memory devices.
摘要翻译：公开了芳族烯二炔衍生物，从这种芳族烯二炔衍生物制造有机半导体薄膜的方法，以及制造并入这种有机半导体薄膜的电子器件的方法。根据示例性实施方案的芳族烯二炔衍生物提供改善的化学和/或电稳定性，其可以提高所得半导体器件的可靠性。根据示例性实施方案的芳族烯二炔衍生物还可适用于通过基于溶液的方法例如旋涂，在室温或接近室温的温度下沉积在各种基材上，以形成涂膜，然后将其加热形成有机半导体薄膜电影。这种降低温度处理的可用性允许在大衬底表面上和/或不适于较高温度处理的衬底上使用芳族烯二炔衍生物。因此，根据示例性实施例的有机半导体薄膜可以结合在薄膜晶体管，电致发光器件，太阳能电池和存储器件中。

7. 发明申请

US20050121668A1 Organic semiconductor polymer for organic thin film transistor containing quinoxaline ring in the backbone chain 有权
标题翻译：在骨架链中含有喹喔啉环的有机薄膜晶体管的有机半导体聚合物
公开(公告)号：US20050121668A1
公开(公告)日：2005-06-09
申请号：US10844380
申请日：2004-05-13
申请人： Bang Lee , Eun Jeong , Kook Han , In Kang
发明人： Bang Lee , Eun Jeong , Kook Han , In Kang
IPC分类号： C08G61/10 , C08G61/12 , C08G73/06 , H01B1/12 , H01L21/316 , H01L21/336 , H01L29/786 , H01L51/00 , H01L51/05 , H01L51/30 , H01L51/40 , H01L29/08
CPC分类号： H01L51/0043 , C08G61/122 , C08G61/124 , C08G61/125 , C08G61/126 , C08G73/0694 , H01L21/31691 , H01L51/0036 , H01L51/0516 , H01L51/0545
摘要： Disclosed herein is a composite-structured organic semiconductor polymer for an organic thin film transistor which contains quinoxaline rings in the backbone of the polymer. According to the organic semiconductor polymer, since quinoxaline rings having n-type semiconductor characteristics, such as high electron affinity, are incorporated into a polythiophene having p-type semiconductor characteristics, the organic semiconductor polymer simultaneously exhibits both p-type and n-type semiconductor characteristics. In addition, the polythienylquinoxaline derivative exhibits high solubility in organic solvents, co-planarity and stability in air. Furthermore, when the polythienylquinoxaline derivative is used as an active layer of an organic thin film transistor, the organic thin film transistor exhibits a high charge carrier mobility and a low off-state leakage current.
摘要翻译：本文公开了一种用于有机薄膜晶体管的复合结构有机半导体聚合物，其在聚合物的主链中含有喹喔啉环。根据有机半导体聚合物，由于具有高电子亲和性的n型半导体特性的喹喔啉环被并入具有p型半导体特性的聚噻吩中，所以有机半导体聚合物同时呈现p型和n型半导体特点此外，聚噻吩基喹喔啉衍生物在有机溶剂中表现出高溶解度，在空气中的共平面性和稳定性。此外，当使用聚噻吩基喹喔啉衍生物作为有机薄膜晶体管的有源层时，有机薄膜晶体管表现出高的载流子迁移率和低截止状态的漏电流。

8. 发明申请

US20060292758A1 Pyrimidopyrimidine derivatives, organic thin film transistors using pyrimidopyrimidine derivatives and method for fabricating the same 有权
公开(公告)号：US20060292758A1
公开(公告)日：2006-12-28
申请号：US11358050
申请日：2006-02-22
申请人： Eun Jeong , Sang Lee , Bang Lee
发明人： Eun Jeong , Sang Lee , Bang Lee
IPC分类号： C06B45/00 , H01L21/84
CPC分类号： H01L51/0068 , H01L51/0067 , H01L51/0071 , H01L51/0545
摘要： Pyrimidopyrimidine derivatives, organic thin film transistors using pyrimidopyrimidine derivatives and method for fabricating the same are provided. Pyrimidopyrimidine derivative structures, along with example syntheses, are provided. The pyrimidopyrimidine derivatives may be pyrimidopyrimidine oligothiophene derivatives in which an oligothiophene having p-type semiconductor characteristics may be bonded to a pyrimidopyrimidine having n-type semiconductor characteristics positioned substantially in the center of the molecules, thereby simultaneously exhibiting both p-type and n-type semiconductor characteristics. The pyrimidopyrimidine derivatives may be spin-coated at room, or ambient, temperature when applied to the fabrication of an electronic device, for example, organic thin film transistors. Organic thin film transistors using the pyrimidopyrimidine derivatives may provide higher charge carrier mobility and/or lower off-state leakage current.

9. 发明申请

US20070129473A1 Organic insulator composition, organic insulating film having the same, organic thin film transistor having the same and electronic device having the same and methods of forming the same 有权
标题翻译：有机绝缘体组合物，具有该有机绝缘体组合物的有机绝缘膜，具有该有机绝缘体组合物的有机薄膜晶体管和具有该有机绝缘体组合物的电子器件及其形成方法
公开(公告)号：US20070129473A1
公开(公告)日：2007-06-07
申请号：US11481843
申请日：2006-07-07
申请人： Jung Shin , Eun Lee , Eun Jeong , Joo Kim , Hyun Moon , Sang Lee
发明人： Jung Shin , Eun Lee , Eun Jeong , Joo Kim , Hyun Moon , Sang Lee
IPC分类号： C04B41/50 , B60C1/00
CPC分类号： H01L51/052 , H01L21/02126 , H01L21/02175 , H01L21/3122 , H01L51/0036 , H01L51/0055 , Y10T428/31663
摘要： Example embodiments of the present invention relate to an organic insulator composition, an organic insulating film having the organic insulator composition, an organic thin film transistor having the organic insulating film, an electronic device having the organic thin film transistor and methods of forming the same. Other example embodiments of the present invention relate to an organic insulator composition including a fluorinated silane compound that may be used to improve the charge carrier mobility and hysteresis of an organic thin film transistor. An organic insulator composition including a fluorinated silane compound and an organic thin film transistor using the same is provided. The hysteresis and physical properties, e.g., threshold voltage and/or charge carrier mobility, of the organic thin film transistor may be improved by the use of the organic insulator composition. The organic thin film transistor may be effectively used in the manufacture of a variety of electronic devices including liquid crystal displays (LCDs) and/or photovoltaic devices.
摘要翻译：本发明的实施例涉及有机绝缘体组合物，具有有机绝缘体组合物的有机绝缘膜，具有有机绝缘膜的有机薄膜晶体管，具有有机薄膜晶体管的电子器件及其形成方法。本发明的其它示例性实施方案涉及包含可用于改善有机薄膜晶体管的载流子迁移率和滞后的氟化硅烷化合物的有机绝缘体组合物。提供了包含氟化硅烷化合物和使用其的有机薄膜晶体管的有机绝缘体组合物。可以通过使用有机绝缘体组合物来改善有机薄膜晶体管的滞后和物理性质，例如阈值电压和/或电荷载流子迁移率。有机薄膜晶体管可以有效地用于制造包括液晶显示器（LCD）和/或光伏器件的各种电子器件。

10. 发明申请

US20060177961A1 Method for fabricating organic thin film transistor by application of electric field 有权
标题翻译：通过施加电场制造有机薄膜晶体管的方法
公开(公告)号：US20060177961A1
公开(公告)日：2006-08-10
申请号：US11196382
申请日：2005-08-04
申请人： Chang Kim , Eun Jeong , Sang Lee , Bon Koo , Eun Lee
发明人： Chang Kim , Eun Jeong , Sang Lee , Bon Koo , Eun Lee
IPC分类号： H01L51/40
CPC分类号： H01L51/0541 , H01L51/0002 , H01L51/0036 , H01L51/0516 , H01L51/0545
摘要： A method for fabricating an organic thin film transistor by application of an electric field. The method includes the steps of fabricating a common organic thin film transistor including a gate electrode, a gate insulating layer, an organic semiconductor layer and source/drain electrodes laminated on a substrate, and applying a direct current (DC) voltage to between the source and drain electrodes and applying an alternating current (AC) voltage to the gate electrode. The characteristics of an organic thin film transistor deteriorated after lamination of the respective layers can be recovered by the simple treatment. Therefore, the OTFT fabricated by the method has low threshold voltage, low driving voltage, high charge carrier mobility, and high Ion/Ioff ratio.
摘要翻译：一种通过施加电场来制造有机薄膜晶体管的方法。该方法包括以下步骤：制造包括栅电极，栅极绝缘层，有机半导体层和层压在衬底上的源极/漏极之间的公共有机薄膜晶体管，以及在源极之间施加直流（DC）电压和漏电极，并向栅电极施加交流（AC）电压。通过简单的处理可以回收各层的层叠后劣化的有机薄膜晶体管的特性。因此，通过该方法制造的OTFT具有低阈值电压，低驱动电压，高电荷载流子迁移率和高I / O比较的高电荷载流子迁移率。

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