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    • 7. 发明授权
    • Semiconductor probe with resistive tip and method of fabricating the same
    • 具有电阻尖端的半导体探针及其制造方法
    • US07319224B2
    • 2008-01-15
    • US11219732
    • 2005-09-07
    • Hong-sik ParkKyoung-lock BaeckJu-hwan JungHyoung-soo KoChul-min ParkSeung-bum Hong
    • Hong-sik ParkKyoung-lock BaeckJu-hwan JungHyoung-soo KoChul-min ParkSeung-bum Hong
    • G21K7/00
    • G11B9/1409G01Q60/30Y10S977/875Y10S977/878Y10S977/879
    • Provided are a semiconductor probe with a resistive tip, and a method of fabricating the semiconductor probe. The method includes forming a stripe-shaped mask layer on a substrate doped with a first impurity, and forming first and second electrode regions by heavily doping portions of the substrate not covered by the mask layer with a second impurity opposite in polarity to the first impurity; annealing the substrate to decrease a gap between the first and second semiconductor electrode regions, and forming resistive regions lightly doped with the second impurity at portions contiguous with the first and second semiconductor electrode regions; forming a stripe-shaped first photoresist orthogonal to the mask layer, and etching the mask layer such that the mask layer has a square shape; forming a second photoresist on the substrate to cover a portion of the first photoresist and define a cantilever region; forming the cantilever region by etching portions not covered by the first and second photoresists; and removing the first and second photoresists, and forming a resistive tip having a semi-quadrangular pyramidal shape by etching portions of the substrate not covered by the mask layer.
    • 提供具有电阻尖端的半导体探针和制造半导体探针的方法。 该方法包括在掺杂有第一杂质的衬底上形成条形掩模层,以及通过以与第一杂质极性相反的第二杂质重掺杂未被掩模层覆盖的衬底的部分来形成第一和第二电极区 ; 退火所述衬底以减小所述第一和第二半导体电极区之间的间隙,以及在与所述第一和第二半导体电极区相邻的部分形成轻掺杂有所述第二杂质的电阻区; 形成与所述掩模层正交的条状的第一光致抗蚀剂,并且蚀刻所述掩模层,使得所述掩模层具有正方形形状; 在所述基板上形成第二光致抗蚀剂以覆盖所述第一光致抗蚀剂的一部分并限定悬臂区域; 通过蚀刻未被第一和第二光致抗蚀剂覆盖的部分形成悬臂区域; 以及去除所述第一和第二光致抗蚀剂,以及通过蚀刻未被所述掩模层覆盖的所述衬底的部分,形成具有半四棱锥形形状的电阻尖端。