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    • 1. 发明授权
    • Positive resist composition
    • 正抗蚀剂组成
    • US07105273B2
    • 2006-09-12
    • US10634954
    • 2003-08-06
    • Shoichiro YasunamiHyou TakahashiKazuyoshi Mizutani
    • Shoichiro YasunamiHyou TakahashiKazuyoshi Mizutani
    • G03F7/04
    • G03F7/0045G03F7/0392G03F7/0397Y10S430/106Y10S430/111
    • A positive resist composition of the present invention achieving significant performance improvements in high energy-beam lithography, which comprises a phenolic polymer having a property of being insoluble or hardly soluble in an aqueous alkali solution and becoming soluble in an aqueous alkali solution by the action of an acid, in which the phenolic polymer includes a repeating unit containing at least one selected from the group consisting of an acetal-protected phenolic hydroxyl group, a ketal-protected phenolic hydroxyl group, a tertiary ester-protected carboxyl group and a tetrahydropyranyl-protected carboxyl group; and a compound having a phenacylsulfonium structure and capable of generating an acid upon irradiation with one of actinic rays and radiation.
    • 本发明的正型抗蚀剂组合物在高能束光刻中获得显着性能改进,其包括具有不溶性或几乎不溶于碱性水溶液的性质的酚醛聚合物,并且通过作用于碱性溶液 一种酸,其中酚类聚合物包括含有选自缩醛保护的酚羟基,缩酮保护的酚羟基,叔酯保护的羧基和四氢吡喃基保护的羧基中的至少一种的重复单元 羧基; 和具有苯甲酰甲基锍结构并能够在用光化射线和辐射之一照射时产生酸的化合物。
    • 6. 发明授权
    • Positive-working photoresist composition
    • 正光刻胶组合物
    • US06589705B1
    • 2003-07-08
    • US09698190
    • 2000-10-30
    • Kenichiro SatoKazuyoshi MizutaniShoichiro Yasunami
    • Kenichiro SatoKazuyoshi MizutaniShoichiro Yasunami
    • G03C172
    • G03F7/0758G03F7/0045G03F7/0048
    • A positive-working photoresist composition comprises (A) a resin comprising the specific repeating structural units which resin increases in its solubility in an alkaline developer when acted upon by an acid, (B′) an onium salt compound which generates an acid when irradiated with active ray or radiation and (C) at least one of fluorine-based and/or silicon-based surface active agent and nonionic surface active agent or a positive-working photoresist composition comprises (A) a resin comprising the specific repeating structural units which resin increases in its solubility in an alkaline developer when acted upon by an acid, (B) a compound which generates an acid when irradiated with active ray or radiation, and (D) a mixed solvent containing at least one propylene glycol monoalkyl ether carboxylate and at least one of solvents selected from the group consisting of propylene glycol monoalkyl ether, alkyl lactate and alkoxyalkyl propionate and solvents selected from the group consisting of &ggr;-butyrolactone, ethylene carbonate and propylene carbonate.
    • 正性光致抗蚀剂组合物包含(A)包含特定重复结构单元的树脂,当被酸作用时树脂在碱性显影剂中的溶解度增加,(B')当照射时产生酸的鎓盐化合物 活性射线或辐射,和(C)氟基和/或硅基表面活性剂和非离子表面活性剂或正性光致抗蚀剂组合物中的至少一种包含(A)包含特定重复结构单元的树脂,该树脂 (B)当用活性射线或辐射照射时产生酸的化合物,和(D)含有至少一种丙二醇单烷基醚羧酸酯的混合溶剂,和 选自丙二醇单烷基醚,乳酸烷基酯和丙酸烷氧基烷基酯中的至少一种溶剂和选自以下的溶剂: 的γ-丁内酯,碳酸亚乙酯和碳酸亚丙酯。
    • 9. 发明授权
    • Positive photoresist composition
    • 正光致抗蚀剂组合物
    • US06346363B2
    • 2002-02-12
    • US09729178
    • 2000-12-05
    • Kazuyoshi MizutaniShoichiro Yasunami
    • Kazuyoshi MizutaniShoichiro Yasunami
    • G03F7004
    • G03F7/0757G03F7/0045
    • A positive type photoresist composition comprising an alkali-soluble or acid-decomposable polysiloxane containing repeating structural units represented by formula (I): wherein L represents at least one divalent connecting group selected from the group consisting of —A—NHCO—, —A—NHCOO— and —A—NHCONH—, wherein A represents a single bond, an alkylene group or an arylene group; X represents a single bond or a divalent connecting group; and Z represents either a group represented by or a group represented by wherein Y represents a hydrogen atom, an alkyl group, an aryl group or an aralkyl group, an atomic group represented by Y may be straight-chain, branched or cyclic, R represents a hydrogen atom or an acid-decomposable group, l represents an integer of from 1 to 3, and m also represents an integer of from 1 to 3.
    • 一种正型光致抗蚀剂组合物,其包含含有由式(I)表示的重复结构单元的碱溶性或酸可分解聚硅氧烷:其中L表示至少一个选自-A-NHCO-,-A- NHCOO-和-A-NHCONH-,其中A表示单键,亚烷基或亚芳基; X表示单键或二价连接基团; Z表示由Y代表氢原子,烷基,芳基或芳烷基表示的基团,由Y表示的原子团可以是直链,支链或环状的,R表示氢原子 原子或酸可分解基团,l表示1〜3的整数,m也表示1〜3的整数。