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1. 发明申请

US20100267225A1 Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20100267225A1
公开(公告)日：2010-10-21
申请号：US12385658
申请日：2009-04-15
申请人： Hyo-san Lee , Bo-un Yoon , Kun-tack Lee , Dae-hyuk Kang , Jeong-nam Han , Jung-jae Myung , Hyung-pyo Hong , Hun-pyo Hong
发明人： Hyo-san Lee , Bo-un Yoon , Kun-tack Lee , Dae-hyuk Kang , Jeong-nam Han , Jung-jae Myung , Hyung-pyo Hong , Hun-pyo Hong
IPC分类号： H01L21/265 , H01L21/306
CPC分类号： H01L21/31133 , G03F7/423 , H01L21/0206 , H01L21/02071
摘要： A method of manufacturing a semiconductor device, the method including forming a photoresist film on a substrate, and removing the photoresist film from the substrate using a composition that includes a sulfuric acid solution, a hydrogen peroxide solution, and a corrosion inhibitor.
摘要翻译：一种制造半导体器件的方法，所述方法包括在衬底上形成光致抗蚀剂膜，并且使用包含硫酸溶液，过氧化氢溶液和腐蚀抑制剂的组合物从衬底去除光致抗蚀剂膜。

2. 发明授权

US08084367B2 Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methods 有权
标题翻译：使用这些方法使用超临界流体和室系统的蚀刻，清洁和干燥方法
公开(公告)号：US08084367B2
公开(公告)日：2011-12-27
申请号：US11752834
申请日：2007-05-23
申请人： Hyo-san Lee , Chang-Ki Hong , Kun-Tack Lee , Woo-Gwan Shim , Jeong-Nam Han , Jung-Min Oh , Kwon-Taek Lim , Ha-Soo Hwang , Haldorai Yuvaraj , Jae-Mok Jung
发明人： Hyo-san Lee , Chang-Ki Hong , Kun-Tack Lee , Woo-Gwan Shim , Jeong-Nam Han , Jung-Min Oh , Kwon-Taek Lim , Ha-Soo Hwang , Haldorai Yuvaraj , Jae-Mok Jung
IPC分类号： H01L21/302
CPC分类号： H01L21/02101 , H01L21/31111 , H01L21/67051 , H01L21/6708 , H01L27/10852 , Y10S134/902
摘要： Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.
摘要翻译：本文提供了使用超临界流体的蚀刻，清洁和干燥方法以及用于进行该临界流体的室系统。蚀刻方法包括使用其中溶解蚀刻剂的超临界二氧化碳蚀刻材料层，以及使用超临界二氧化碳除去由材料层和蚀刻化学品之间的反应产生的蚀刻副产物，其中清洁化学品溶解还提供了制造半导体器件的方法。

3. 发明授权

US08951383B2 Apparatus for treating wafers using supercritical fluid 有权
标题翻译：使用超临界流体处理晶片的设备
公开(公告)号：US08951383B2
公开(公告)日：2015-02-10
申请号：US12973963
申请日：2010-12-21
申请人： Hyo-san Lee , Chang-ki Hong , Kun-tack Lee , Jeong-nam Han
发明人： Hyo-san Lee , Chang-ki Hong , Kun-tack Lee , Jeong-nam Han
IPC分类号： C23F1/08 , H01L21/67
CPC分类号： H01L21/67017 , H01J37/32449 , H01J37/32467 , H01J37/32715 , H01J37/32743 , H01J37/32816 , H01J2237/334 , H01J2237/335 , H01L21/67028 , H01L21/67069 , H01L21/67276 , Y10T137/2931 , Y10T137/4673
摘要： Provided are an apparatus and method for treating wafers using a supercritical fluid. The wafer treatment apparatus includes a plurality of chambers; a first supply supplying a first fluid in a supercritical state; a second supply supplying a mixture of the first fluid and a second fluid; a plurality of first and second valves; and a controller selecting a first chamber of the plurality of chambers for wafer treatment to control the open/closed state of each of the plurality of first valves so that the first fluid can be supplied only to the first chamber of the plurality of chambers and selecting a second chamber of the plurality of chambers to control the open/closed state of each of the plurality of second valves so that the mixture of the first fluid and a second fluid can be supplied only to the second chamber of the plurality of chambers. The wafer treatment method involves performing a predetermined treatment such as etching, cleaning or drying on wafers within only one of the plurality of chambers, followed by wafer treatment on the succeeding chamber, and thus allowing for sequential wafer treatment within each of the plurality of chambers.
摘要翻译：提供了一种使用超临界流体处理晶片的设备和方法。晶片处理装置包括多个室; 供应超临界状态的第一流体的第一供应源; 供应第一流体和第二流体的混合物的第二供应源; 多个第一和第二阀; 以及控制器，选择用于晶片处理的多个室的第一室，以控制多个第一阀中的每一个的打开/关闭状态，使得第一流体仅能够供应到多个室的第一室，并且选择多个室中的第二室，用于控制多个第二阀中的每一个的打开/关闭状态，使得第一流体和第二流体的混合物只能供应到多个室的第二室。晶片处理方法包括对多个室内的仅一个中的晶片进行蚀刻，清洗或干燥等预定处理，然后在后续室进行晶片处理，从而允许在多个室内进行顺序晶片处理。

4. 发明授权

US08790470B2 Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methods 有权
标题翻译：使用这些方法使用超临界流体和室系统的蚀刻，清洁和干燥方法
公开(公告)号：US08790470B2
公开(公告)日：2014-07-29
申请号：US13326940
申请日：2011-12-15
申请人： Hyo-san Lee , Chang-Ki Hong , Kun-Tack Lee , Woo-Gwan Shim , Jeong-Nam Han , Jung-Min Oh , Kwon-Taek Lim , Ha-Soo Hwang , Haldorai Yuvaraj , Jae-Mok Jung
发明人： Hyo-san Lee , Chang-Ki Hong , Kun-Tack Lee , Woo-Gwan Shim , Jeong-Nam Han , Jung-Min Oh , Kwon-Taek Lim , Ha-Soo Hwang , Haldorai Yuvaraj , Jae-Mok Jung
IPC分类号： B08B3/00 , H01L21/67 , H01L21/02 , H01L21/311 , H01L27/108
CPC分类号： H01L21/02101 , H01L21/31111 , H01L21/67051 , H01L21/6708 , H01L27/10852 , Y10S134/902
摘要： Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.
摘要翻译：本文提供了使用超临界流体的蚀刻，清洁和干燥方法以及用于进行该临界流体的室系统。蚀刻方法包括使用其中溶解蚀刻剂的超临界二氧化碳蚀刻材料层，以及使用超临界二氧化碳除去由材料层和蚀刻化学品之间的反应产生的蚀刻副产物，其中清洁化学品溶解还提供了制造半导体器件的方法。

5. 发明申请

US20110083807A1 Apparatus for Treating Wafers Using Supercritical Fluid 有权
标题翻译：使用超临界流体处理晶片的设备
公开(公告)号：US20110083807A1
公开(公告)日：2011-04-14
申请号：US12973963
申请日：2010-12-21
申请人： Hyo-san Lee , Chang-ki Hong , Kun-tack Lee , Jeong-nam Han
发明人： Hyo-san Lee , Chang-ki Hong , Kun-tack Lee , Jeong-nam Han
IPC分类号： C23F1/08
CPC分类号： H01L21/67017 , H01J37/32449 , H01J37/32467 , H01J37/32715 , H01J37/32743 , H01J37/32816 , H01J2237/334 , H01J2237/335 , H01L21/67028 , H01L21/67069 , H01L21/67276 , Y10T137/2931 , Y10T137/4673
摘要： Provided are an apparatus and method for treating wafers using a supercritical fluid. The wafer treatment apparatus includes a plurality of chambers; a first supply supplying a first fluid in a supercritical state; a second supply supplying a mixture of the first fluid and a second fluid; a plurality of first and second valves; and a controller selecting a first chamber of the plurality of chambers for wafer treatment to control the open/closed state of each of the plurality of first valves so that the first fluid can be supplied only to the first chamber of the plurality of chambers and selecting a second chamber of the plurality of chambers to control the open/closed state of each of the plurality of second valves so that the mixture of the first fluid and a second fluid can be supplied only to the second chamber of the plurality of chambers. The wafer treatment method involves performing a predetermined treatment such as etching, cleaning or drying on wafers within only one of the plurality of chambers, followed by wafer treatment on the succeeding chamber, and thus allowing for sequential wafer treatment within each of the plurality of chambers.
摘要翻译：提供了一种使用超临界流体处理晶片的设备和方法。晶片处理装置包括多个室; 供应超临界状态的第一流体的第一供应源; 供应第一流体和第二流体的混合物的第二供应源; 多个第一和第二阀; 以及控制器，选择用于晶片处理的多个室的第一室，以控制多个第一阀中的每一个的打开/关闭状态，使得第一流体仅能够供应到多个室的第一室，并且选择多个室中的第二室，用于控制多个第二阀中的每一个的打开/关闭状态，使得第一流体和第二流体的混合物只能供应到多个室的第二室。晶片处理方法包括对多个室内的仅一个中的晶片进行蚀刻，清洗或干燥等预定处理，然后在后续室进行晶片处理，从而允许在多个室内进行顺序晶片处理。

6. 发明授权

US08585917B2 Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methods 有权
标题翻译：使用这些方法使用超临界流体和室系统的蚀刻，清洁和干燥方法
公开(公告)号：US08585917B2
公开(公告)日：2013-11-19
申请号：US13326965
申请日：2011-12-15
申请人： Hyo-san Lee , Chang-Ki Hong , Kun-Tack Lee , Woo-Gwan Shim , Jeong-Nam Han , Jung-Min Oh , Kwon-Taek Lim , Ha-Soo Hwang , Haldorai Yuvaraj , Jae-Mok Jung
发明人： Hyo-san Lee , Chang-Ki Hong , Kun-Tack Lee , Woo-Gwan Shim , Jeong-Nam Han , Jung-Min Oh , Kwon-Taek Lim , Ha-Soo Hwang , Haldorai Yuvaraj , Jae-Mok Jung
IPC分类号： C03C15/00
CPC分类号： H01L21/02101 , H01L21/31111 , H01L21/67051 , H01L21/6708 , H01L27/10852 , Y10S134/902
摘要： Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.
摘要翻译：本文提供了使用超临界流体的蚀刻，清洁和干燥方法以及用于进行该临界流体的室系统。蚀刻方法包括使用其中溶解蚀刻剂的超临界二氧化碳蚀刻材料层，以及使用超临界二氧化碳除去由材料层和蚀刻化学品之间的反应产生的蚀刻副产物，其中清洁化学品溶解还提供了制造半导体器件的方法。

7. 发明申请

US20120080059A1 ETCHING, CLEANING AND DRYING METHODS USING SUPERCRITICAL FLUID AND CHAMBER SYSTEMS USING THESE METHODS 有权
标题翻译：使用这些方法的超临界流体和室系统的蚀刻，清洁和干燥方法
公开(公告)号：US20120080059A1
公开(公告)日：2012-04-05
申请号：US13326965
申请日：2011-12-15
申请人： Hyo-san Lee , Chang-Ki Hong , Kun-Tack Lee , Woo-Gwan Shim , Jeong-Nam Han , Jung-Min Oh , Kwon-Taek Lim , Ha-Soo Hwang , Haldural Yuvaraj , Jae-Mok Jung
发明人： Hyo-san Lee , Chang-Ki Hong , Kun-Tack Lee , Woo-Gwan Shim , Jeong-Nam Han , Jung-Min Oh , Kwon-Taek Lim , Ha-Soo Hwang , Haldural Yuvaraj , Jae-Mok Jung
IPC分类号： B08B3/08
CPC分类号： H01L21/02101 , H01L21/31111 , H01L21/67051 , H01L21/6708 , H01L27/10852 , Y10S134/902
摘要： Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.
摘要翻译：本文提供了使用超临界流体的蚀刻，清洁和干燥方法以及用于进行该临界流体的室系统。蚀刻方法包括使用其中溶解蚀刻剂的超临界二氧化碳蚀刻材料层，以及使用超临界二氧化碳除去由材料层和蚀刻化学品之间的反应产生的蚀刻副产物，其中清洁化学品溶解还提供了制造半导体器件的方法。

8. 发明授权

US07857939B2 Apparatus for treating wafers using supercritical fluid 有权
标题翻译：使用超临界流体处理晶片的设备
公开(公告)号：US07857939B2
公开(公告)日：2010-12-28
申请号：US11725829
申请日：2007-03-20
申请人： Hyo-san Lee , Chang-ki Hong , Kun-tack Lee , Jeong-nam Han
发明人： Hyo-san Lee , Chang-ki Hong , Kun-tack Lee , Jeong-nam Han
IPC分类号： B67D5/54
CPC分类号： H01L21/67017 , H01J37/32449 , H01J37/32467 , H01J37/32715 , H01J37/32743 , H01J37/32816 , H01J2237/334 , H01J2237/335 , H01L21/67028 , H01L21/67069 , H01L21/67276 , Y10T137/2931 , Y10T137/4673
摘要： Provided are an apparatus and method for treating wafers using a supercritical fluid. The wafer treatment apparatus includes a plurality of chambers; a first supply supplying a first fluid in a supercritical state; a second supply supplying a mixture of the first fluid and a second fluid; a plurality of first and second valves; and a controller selecting a first chamber of the plurality of chambers for wafer treatment to control the open/closed state of each of the plurality of first valves so that the first fluid can be supplied only to the first chamber of the plurality of chambers and selecting a second chamber of the plurality of chambers to control the open/closed state of each of the plurality of second valves so that the mixture of the first fluid and a second fluid can be supplied only to the second chamber of the plurality of chambers. The wafer treatment method involves performing a predetermined treatment such as etching, cleaning or drying on wafers within only one of the plurality of chambers, followed by wafer treatment on the succeeding chamber, and thus allowing for sequential wafer treatment within each of the plurality of chambers.
摘要翻译：提供了一种使用超临界流体处理晶片的设备和方法。晶片处理装置包括多个室; 供应超临界状态的第一流体的第一供应源; 供应第一流体和第二流体的混合物的第二供应源; 多个第一和第二阀; 以及控制器，选择用于晶片处理的多个室的第一室，以控制多个第一阀中的每一个的打开/关闭状态，使得第一流体仅能够供应到多个室的第一室，并且选择多个室中的第二室，用于控制多个第二阀中的每一个的打开/关闭状态，使得第一流体和第二流体的混合物只能供应到多个室的第二室。晶片处理方法包括对多个室内的仅一个中的晶片进行蚀刻，清洗或干燥等预定处理，然后在后续室进行晶片处理，从而允许在多个室内进行顺序晶片处理。

9. 发明申请

US20080029159A1 Apparatus and method for treating wafers using supercritical fluid 有权
标题翻译：使用超临界流体处理晶片的设备和方法
公开(公告)号：US20080029159A1
公开(公告)日：2008-02-07
申请号：US11725829
申请日：2007-03-20
申请人： Hyo-san Lee , Chang-ki Hong , Kun-tack Lee , Jeong-nam Han
发明人： Hyo-san Lee , Chang-ki Hong , Kun-tack Lee , Jeong-nam Han
IPC分类号： B67D5/54
CPC分类号： H01L21/67017 , H01J37/32449 , H01J37/32467 , H01J37/32715 , H01J37/32743 , H01J37/32816 , H01J2237/334 , H01J2237/335 , H01L21/67028 , H01L21/67069 , H01L21/67276 , Y10T137/2931 , Y10T137/4673
摘要： Provided are an apparatus and method for treating wafers using a supercritical fluid. The wafer treatment apparatus includes a plurality of chambers; a first supply supplying a first fluid in a supercritical state; a second supply supplying a mixture of the first fluid and a second fluid; a plurality of first and second valves; and a controller selecting a first chamber of the plurality of chambers for wafer treatment to control the open/closed state of each of the plurality of first valves so that the first fluid can be supplied only to the first chamber of the plurality of chambers and selecting a second chamber of the plurality of chambers to control the open/closed state of each of the plurality of second valves so that the mixture of the first fluid and a second fluid can be supplied only to the second chamber of the plurality of chambers. The wafer treatment method involves performing a predetermined treatment such as etching, cleaning or drying on wafers within only one of the plurality of chambers, followed by wafer treatment on the succeeding chamber, and thus allowing for sequential wafer treatment within each of the plurality of chambers.
摘要翻译：提供了一种使用超临界流体处理晶片的设备和方法。晶片处理装置包括多个室; 供应超临界状态的第一流体的第一供应源; 供应第一流体和第二流体的混合物的第二供应源; 多个第一和第二阀; 以及控制器，选择用于晶片处理的多个室的第一室，以控制多个第一阀中的每一个的打开/关闭状态，使得第一流体仅能够供应到多个室的第一室，并且选择多个室中的第二室，用于控制多个第二阀中的每一个的打开/关闭状态，使得第一流体和第二流体的混合物只能供应到多个室的第二室。晶片处理方法包括对多个室内的仅一个中的晶片进行蚀刻，清洗或干燥等预定处理，然后在后续室进行晶片处理，从而允许在多个室内进行顺序晶片处理。

10. 发明申请

US20120064727A1 SUBSTRATE TREATMENT EQUIPMENT AND METHOD OF TREATING SUBSTRATE USING THE SAME 审中-公开
标题翻译：基板处理设备和使用该基板处理基板的方法
公开(公告)号：US20120064727A1
公开(公告)日：2012-03-15
申请号：US13225696
申请日：2011-09-06
申请人： Jung-min Oh , Kun-tack Lee , Hyo-san Lee , Young-hoo Kim , Jung-won Lee , Sang-won Bae , Yong-jhin Cho
发明人： Jung-min Oh , Kun-tack Lee , Hyo-san Lee , Young-hoo Kim , Jung-won Lee , Sang-won Bae , Yong-jhin Cho
IPC分类号： H01L21/306 , B08B3/00
CPC分类号： H01L21/02057 , H01L21/02101 , H01L21/67028 , H01L21/67034 , H01L21/67051 , H01L21/67109 , H01L21/67742 , H01L21/67748
摘要： Substrate treatment equipment includes a wet treatment apparatus for treating a substrate with a solution (liquid), a drying (treatment) apparatus discrete from the wet treatment apparatus and for drying the substrate using a supercritical fluid, and a transfer device. The substrate is extracted by the transfer device from the wet treatment apparatus after the substrate has been treated and the substrate is transferred by the device while wet to the dry treatment apparatus. To this end, various elements/methods may be used to keep the substrate wet or wet the substrate. In any case, the substrate is prevented from drying naturally, i.e., from air-drying, as the substrate is being transferred from the wet treatment apparatus to the drying apparatus. Thus, equipment and method prevent defects such as water spots and the leaning of fine structures on the substrate.
摘要翻译：衬底处理设备包括用溶液（液体）处理衬底的湿处理设备，从湿处理设备离散的干燥（处理）设备，以及使用超临界流体干燥衬底和转移装置。在处理基板之后，通过转移装置从湿处理装置将基板提取出来，并且将基板通过装置湿润地转移到干燥处理装置。为此，可以使用各种元件/方法来使衬底保持湿润或湿润衬底。在任何情况下，当衬底从湿处理设备转移到干燥设备时，防止衬底自然干燥，即从空气干燥。因此，设备和方法可以防止基底上的水斑和精细结构的倾斜等缺陷。

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