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1. 发明申请

US20060043384A1 Vertical nitride semiconductor light emitting diode 审中-公开
标题翻译：垂直氮化物半导体发光二极管
公开(公告)号：US20060043384A1
公开(公告)日：2006-03-02
申请号：US10995898
申请日：2004-11-24
申请人： Hyo Cho , Min Kim , Kun Ko , Young Park
发明人： Hyo Cho , Min Kim , Kun Ko , Young Park
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/32 , H01L33/405 , H01L33/641
摘要： The present invention relates to a vertical nitride semiconductor light emitting diode. The present invention provides a vertical nitride semiconductor light emitting diode comprising a first conductive nitride semiconductor layer including an upper surface having a first electrode formed thereon; an active layer formed on a lower surface of the first conductive nitride semiconductor layer; a second conductive nitride semiconductor layer formed on a lower surface of the active layer; a highly reflective ohmic contact layer formed on the lower surface of the second conductive nitride semiconductor layer; and a metal substrate formed on the lower surface of the highly reflective ohmic contact layer. In accordance with the present invention, provided are effects such as good heat release, reduction of forward voltage, and improvement of electrostatic discharge effects. In addition, a broad light emitting area can be secured, thereby improving LED luminance.
摘要翻译：本发明涉及垂直氮化物半导体发光二极管。本发明提供了一种垂直氮化物半导体发光二极管，包括：第一导电氮化物半导体层，包括其上形成有第一电极的上表面; 形成在所述第一导电氮化物半导体层的下表面上的有源层; 形成在所述有源层的下表面上的第二导电氮化物半导体层; 形成在第二导电氮化物半导体层的下表面上的高反射欧姆接触层; 以及形成在高反射欧姆接触层的下表面上的金属基板。根据本发明，提供了诸如良好的散热，降低正向电压和改善静电放电效果的效果。此外，可以确保宽的发光面积，从而提高LED的亮度。

2. 发明申请

US20050133807A1 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US20050133807A1
公开(公告)日：2005-06-23
申请号：US10853236
申请日：2004-05-26
申请人： Young Park , Hyo Cho , Seung Yoo , Kun Ko
发明人： Young Park , Hyo Cho , Seung Yoo , Kun Ko
IPC分类号： H01L29/06 , H01L33/32 , H01L33/38 , H01L33/42 , H01L33/62
CPC分类号： H01L33/382 , H01L24/45 , H01L2224/45 , H01L2924/00011 , H01L2924/00014 , H01L2924/01015 , H01L2924/12041 , H01L2924/00 , H01L2224/48 , H01L2224/45099 , H01L2224/43 , H01L2924/01006
摘要： Disclosed is a nitride semiconductor LED having a light emitting structure. In the light emitting structure, an n-doped semiconductor layer has a first region and a second region surrounding the first region on a top thereof, an active layer is formed on the second region of the n-doped semiconductor layer, and a p-doped nitride semiconductor layer is formed on the active layer. A p-electrode is formed on the p-doped semiconductor layer. An n-electrode is formed on the first region of the n-doped nitride semiconductor layer.
摘要翻译：公开了具有发光结构的氮化物半导体LED。在发光结构中，n掺杂半导体层在其顶部具有第一区域和围绕第一区域的第二区域，在n掺杂半导体层的第二区域上形成有源层，掺杂氮化物半导体层形成在有源层上。在p掺杂半导体层上形成p电极。在n掺杂氮化物半导体层的第一区域上形成n电极。

3. 发明申请

US20060038190A1 Fabrication method of light emitting diode incorporating substrate surface treatment by laser and light emitting diode fabricated thereby 有权
标题翻译：掺合了由其制造的激光和发光二极管的基板表面处理的发光二极管的制造方法
公开(公告)号：US20060038190A1
公开(公告)日：2006-02-23
申请号：US10953815
申请日：2004-09-30
申请人： Young Park , Hun Hahm , Kun Ko , Hyo Cho
发明人： Young Park , Hun Hahm , Kun Ko , Hyo Cho
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L21/02378 , H01L21/02403 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L33/007 , Y10S438/964
摘要： The present invention relates to a fabrication method of LEDs incorporating a step of surface-treating a substrate by a laser and an LED fabricated by such a fabrication method. The present invention can use a laser in order to implement finer surface treatment to an LED substrate over the prior art. As a result, the invention can improve the light extraction efficiency of an LED while protecting the substrate from chronic problems of the prior art such as stress or defects induced from chemical etching and/or physical polishing.
摘要翻译：本发明涉及一种LED的制造方法，其包括通过激光对基板进行表面处理的步骤以及通过这种制造方法制造的LED。与现有技术相比，本发明可以使用激光器来实现对LED基板的更精细的表面处理。结果，本发明可以提高LED的光提取效率，同时保护衬底免受现有技术的慢性问题，例如由化学蚀刻和/或物理抛光引起的应力或缺陷。

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