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    • 4. 发明授权
    • Word line decoding circuit of a semiconductor memory device
    • 半导体存储器件的字线解码电路
    • US5706245A
    • 1998-01-06
    • US573967
    • 1995-12-15
    • Hyeun-Su Kim
    • Hyeun-Su Kim
    • G11C11/40G11C8/10G11C7/00
    • G11C8/10
    • The present invention includes a plurality of memory cells store information and one row decoder for every four word lines to decode an external address output a single row decoding signal. A word drive decoder generates a word line driving signal. A split word line driver arranged such that the memory cell array is formed between each split word line driver, inputs the single row decoding signal output from the row decoder and the word line driving signal output from the word drive decoder to thereby output a word line signal to select appropriate memory cells. With this structure, the reduced number of metalized lines requiring straps which overlay the memory cell array help minimize short-circuit problems that would otherwise occur when dimensions of metalized lines are reduced.
    • 本发明包括多个存储单元存储信息,并且每四个字线存储一行解码器,以对输出单行解码信号的外部地址进行解码。 字驱动解码器产生字线驱动信号。 分割字线驱动器被布置成使得存储单元阵列形成在每个分离字线驱动器之间,输入从行解码器输出的单行解码信号和从字驱动解码器输出的字线驱动信号,从而输出字线 信号选择适当的存储单元。 利用这种结构,覆盖存储单元阵列的需要带的金属化线的减少的数量有助于最小化当金属化线的尺寸减小时否则会发生的短路问题。
    • 5. 发明授权
    • Low-profile MEMS thermal printhead die having backside electrical connections
    • 具有背面电气连接的薄型MEMS热敏打印头芯片
    • US08556389B2
    • 2013-10-15
    • US13154419
    • 2011-06-06
    • Dariusz GoldaHyeun-Su KimValerie Gassend
    • Dariusz GoldaHyeun-Su KimValerie Gassend
    • B41J2/05
    • B41J2/3359B41J2/335B81C1/00309H01L2924/0002H01L2924/00
    • A thermal printhead die is formed from an SOI structure as a MEMS device. The die has a printing surface, a buried oxide layer, and a mounting surface opposite the printing surface. A plurality of ink delivery sites are formed on the printing surface, each site having an ink-receiving and ink-dispensing structure. An ohmic heater is formed adjacent to each structure, and an under-bump metallization (UBM) pad is formed on the mounting surface and is electrically connected to the ohmic heater, so that ink received by the ink-delivery site and electrically heated by the ohmic heater may be delivered to a substrate by sublimation. A through-silicon-via (TSV) plug may be formed through the thickness of the die and electrically coupled through the buried oxide layer from the ohmic heater to the UBM pad. Layers of interconnect metal may connect the ohmic heater to the UBM pad and to the TSV plug.
    • 热打印头芯片由作为MEMS器件的SOI结构形成。 模具具有印刷表面,掩埋氧化物层和与印刷表面相对的安装表面。 在打印表面上形成多个墨水输送部位,每个部位都具有墨水接收和墨水分配结构。 在每个结构附近形成欧姆加热器,并且在安装表面上形成凸块下金属化(UBM)焊盘,并与欧姆加热器电连接,使得由油墨传送部位接收的电和由 欧姆加热器可以通过升华被输送到基板。 可以通过芯片的厚度形成贯通硅通孔(TSV)插头,并通过掩埋氧化层从欧姆加热器电耦合到UBM焊盘。 互连金属层可以将欧姆加热器连接到UBM焊盘和TSV插头。
    • 6. 发明申请
    • LOW-PROFILE MEMS THERMAL PRINTHEAD DIE HAVING BACKSIDE ELECTRICAL CONNECTIONS
    • 低配置型微电子热敏打印机具有背面电气连接
    • US20120200640A1
    • 2012-08-09
    • US13154419
    • 2011-06-06
    • Dariusz GoldaHyeun-Su KimValerie Gassend
    • Dariusz GoldaHyeun-Su KimValerie Gassend
    • B41J2/05H01L21/28H01L21/302
    • B41J2/3359B41J2/335B81C1/00309H01L2924/0002H01L2924/00
    • A thermal printhead die is formed from an SOI structure as a MEMS device. The die has a printing surface, a buried oxide layer, and a mounting surface opposite the printing surface. A plurality of ink delivery sites are formed on the printing surface, each site having an ink-receiving and ink-dispensing structure. An ohmic heater is formed adjacent to each structure, and an under-bump metallization (UBM) pad is formed on the mounting surface and is electrically connected to the ohmic heater, so that ink received by the ink-delivery site and electrically heated by the ohmic heater may be delivered to a substrate by sublimation. A through-silicon-via (TSV) plug may be formed through the thickness of the die and electrically coupled through the buried oxide layer from the ohmic heater to the UBM pad. Layers of interconnect metal may connect the ohmic heater to the UBM pad and to the TSV plug.
    • 热打印头芯片由作为MEMS器件的SOI结构形成。 模具具有印刷表面,掩埋氧化物层和与印刷表面相对的安装表面。 在打印表面上形成多个墨水输送部位,每个部位都具有墨水接收和墨水分配结构。 在每个结构附近形成欧姆加热器,并且在安装表面上形成凸块下金属化(UBM)焊盘,并与欧姆加热器电连接,使得由油墨传送部位接收的电和由 欧姆加热器可以通过升华被输送到基板。 可以通过芯片的厚度形成贯通硅通孔(TSV)插头,并通过掩埋氧化层从欧姆加热器电耦合到UBM焊盘。 互连金属层可以将欧姆加热器连接到UBM焊盘和TSV插头。
    • 10. 发明授权
    • Integrated circuit memory devices having zig-zag arrangements of column select IO blocks to increase input/output line routing efficiency
    • 具有列选择IO块的Z字形排列以增加输入/输出线路路由效率的集成电路存储器件
    • US06996025B2
    • 2006-02-07
    • US10774902
    • 2004-02-09
    • Hyun-Seok LeeKyung-Ho KimHyeun-Su Kim
    • Hyun-Seok LeeKyung-Ho KimHyeun-Su Kim
    • G11C8/00
    • G11C7/18G11C7/06G11C11/4091G11C11/4097
    • Integrated circuit memory devices include sense amplifier arrays having layouts that are configured to support greater pitch between adjacent input/output lines, while maintaining high levels of integration density. A sense amplifier array is provided having first and second column select I/O blocks that are arranged in an alternating zig-zag layout sequence, with the first column select I/O blocks positioned in a first row of the sense amplifier array and the second column select I/O blocks positioned in a second row of the sense amplifier array. The sense amplifier array also includes an alternating zig-zag layout sequence of first and second N-type (or P-type) sense amplifier blocks that extends back-and-forth between the first and second rows. The zig-zag layout sequence of sense amplifier blocks is interleaved with the zig-zag layout sequence of the column select I/O blocks.
    • 集成电路存储器件包括具有配置为支持相邻输入/输出线之间较大间距的布局的读出放大器阵列,同时保持高水平的积分密度。 提供了一种读出放大器阵列,其具有布置在交替Z字形布局序列中的第一和第二列选择I / O块,其中第一列选择I / O块位于读出放大器阵列的第一行,第二列选择I / 列选择位于读出放大器阵列的第二行中的I / O块。 读出放大器阵列还包括在第一和第二行之间往复延伸的第一和第二N型(或P型)读出放大器块的交替Z字形布局序列。 读出放大器块的之字形布局序列与列选择I / O块的之字形布局序列交错。