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    • 1. 发明授权
    • Highly efficient organic light emitting device using substrate having nanosized hemispherical recesses and method for preparing the same
    • 使用具有纳米尺寸半球形凹槽的衬底的高效有机发光器件及其制备方法
    • US07173276B2
    • 2007-02-06
    • US10936023
    • 2004-09-08
    • Hyeon ChoiSe Hwan SonSang Ho KimSun Ah Park
    • Hyeon ChoiSe Hwan SonSang Ho KimSun Ah Park
    • H01L51/00
    • H01L51/5271H01L51/52H01L51/5281
    • The present invention provides an organic light emitting device comprising a substrate, a first electrode, an organic material layer and a second electrode in sequentially laminated form, wherein a plurality of continued hemispherical recesses are formed on an upper surface of the substrate aligned adjacent to the first electrode. In addition, The present invention provides a method comprising the steps of a) dipping a substrate having at least one aluminum surface in an acid solution, and applying oxidation voltage of 10 to 400 V to the substrate so as to form an aluminum oxide layer on the aluminum surface of the substrate in such a manner that a plurality of continued recesses are formed on the aluminum oxide layer, and a plurality of continued recesses having curvature in identical direction to that of the recesses on the aluminum oxide layer are formed on an interface between the aluminum oxide layer and the substrate; b) removing the aluminum oxide layer from the substrate, thereby forming a plurality of continued hemispherical recesses; and c) forming an organic material layer and an electrode on one surface of the substrate formed with the hemispherical recesses.
    • 本发明提供一种有机发光装置,其包括依次层叠形式的基板,第一电极,有机材料层和第二电极,其中,在基板的上表面上形成多个连续的半球形凹部, 第一电极。 此外,本发明提供一种方法,其包括以下步骤:a)将具有至少一个铝表面的基材浸渍在酸溶液中,并向基材施加10-400V的氧化电压,以形成氧化铝层 在氧化铝层上形成多个连续凹部的方式形成基板的铝表面,并且在界面上形成多个具有与氧化铝层上的凹部相同方向的曲率的连续凹部 在氧化铝层和基板之间; b)从基板上去除氧化铝层,从而形成多个连续的半球形凹槽; 以及c)在形成有半球形凹部的基板的一个表面上形成有机材料层和电极。
    • 2. 发明授权
    • Organic light emitting device and method for manufacturing the same
    • 有机发光装置及其制造方法
    • US08040044B2
    • 2011-10-18
    • US11988219
    • 2006-07-14
    • Min Soo KangSe Hwan SonHyeon Choi
    • Min Soo KangSe Hwan SonHyeon Choi
    • H01J1/62H01J63/04
    • H01L51/5088H01L51/5278
    • Disclosed is an organic light emitting device and a method for manufacturing the same. The organic light emitting device includes a first electrode, one or more organic compound layers, and a second electrode. The first electrode includes a conductive layer and an n-type organic compound layer disposed on the conductive layer. A difference in energy between an LUMO energy level of the n-type organic compound layer of the first electrode and a Fermi energy level of the conductive layer of the first electrode is 4 eV or less. One of the organic compound layers interposed between the n-type organic compound layer of the first electrode and the second electrode is a p-type organic compound layer forming an NP junction along with the n-type organic compound layer of the first electrode. A difference in energy between the LUMO energy level of the n-type organic compound layer of the first electrode and an HOMO energy level of the p-type organic compound layer is 1 eV or less. One or more layers interposed between the conductive layer of the first electrode and the second electrode is n-doped or p-doped with an organic material or an inorganic material.
    • 公开了一种有机发光器件及其制造方法。 有机发光器件包括第一电极,一个或多个有机化合物层和第二电极。 第一电极包括设置在导电层上的导电层和n型有机化合物层。 第一电极的n型有机化合物层的LUMO能级与第一电极的导电层的费米能级之间的能量差为4eV以下。 介于第一电极的n型有机化合物层和第二电极之间的有机化合物层之一是与第一电极的n型有机化合物层一起形成NP结的p型有机化合物层。 第一电极的n型有机化合物层的LUMO能级与p型有机化合物层的HOMO能级之间的能量差为1eV以下。 插入在第一电极的导电层和第二电极之间的一个或多个层是用有机材料或无机材料进行n掺杂或p掺杂的。
    • 3. 发明申请
    • Organic light emitting device and method for manufacturing the same
    • 有机发光装置及其制造方法
    • US20090039770A1
    • 2009-02-12
    • US11988219
    • 2006-07-14
    • Min Soo KangSe Hwan SonHyeon Choi
    • Min Soo KangSe Hwan SonHyeon Choi
    • H01J1/62H01L21/00
    • H01L51/5088H01L51/5278
    • Disclosed is an organic light emitting device and a method for manufacturing the same. The organic light emitting device includes a first electrode, one or more organic compound layers, and a second electrode. The first electrode includes a conductive layer and an n-type organic compound layer disposed on the conductive layer. A difference in energy between an LUMO energy level of the n-type organic compound layer of the first electrode and a Fermi energy level of the conductive layer of the first electrode is 4 eV or less. One of the organic compound layers interposed between the n-type organic compound layer of the first electrode and the second electrode is a p-type organic compound layer forming an NP junction along with the n-type organic compound layer of the first electrode. A difference in energy between the LUMO energy level of the n-type organic compound layer of the first electrode and an HOMO energy level of the p-type organic compound layer is 1 eV or less. One or more layers interposed between the conductive layer of the first electrode and the second electrode is n-doped or p-doped with an organic material or an inorganic material.
    • 公开了一种有机发光器件及其制造方法。 有机发光器件包括第一电极,一个或多个有机化合物层和第二电极。 第一电极包括设置在导电层上的导电层和n型有机化合物层。 第一电极的n型有机化合物层的LUMO能级与第一电极的导电层的费米能级之间的能量差为4eV以下。 介于第一电极的n型有机化合物层和第二电极之间的有机化合物层之一是与第一电极的n型有机化合物层一起形成NP结的p型有机化合物层。 第一电极的n型有机化合物层的LUMO能级与p型有机化合物层的HOMO能级之间的能量差为1eV以下。 插入在第一电极的导电层和第二电极之间的一个或多个层是用有机材料或无机材料进行n掺杂或p掺杂的。