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1. 发明授权

US08242677B2 Combination organic light emitting diode panel and grounding unit 有权
标题翻译：组合有机发光二极管面板和接地单元
公开(公告)号：US08242677B2
公开(公告)日：2012-08-14
申请号：US13105345
申请日：2011-05-11
申请人： Hye Yong Chu , Jeong Ik Lee , Doo Hee Cho , Jun Han Han , Joo Won Lee , Jin Wook Shin , Jong Hee Lee
发明人： Hye Yong Chu , Jeong Ik Lee , Doo Hee Cho , Jun Han Han , Joo Won Lee , Jin Wook Shin , Jong Hee Lee
IPC分类号： H01J1/52 , H01J19/40
CPC分类号： H01L51/5203 , H01L51/524 , H01L51/5243 , H01L51/5246 , H01L2251/5361 , H01L2251/566
摘要： Provided is an organic light emitting diode (OLED) panel for lighting, including an organic layer emitting light by reaction in response to power supplied by a positive electrode and a negative electrode, a protection cap protecting the organic layer from external moisture and oxygen, a cover film attached to upper surfaces of the positive electrode and negative electrode, and serving as a ground for the positive electrode and the negative electrode, and a conductive metal layer grounding the positive electrode and the negative electrode to the cover film.
摘要翻译：提供了一种用于照明的有机发光二极管（OLED）面板，包括响应于由正电极和负电极提供的电力进行反应而发光的有机层，保护有机层免受外部水分和氧气的保护帽，覆盖膜附接到正极和负极的上表面，并且用作正极和负极的接地，导电金属层将正极和负极接地到覆盖膜。

2. 发明授权

US08421064B2 Organic-light-emitting-diode flat-panel light-source apparatus 有权
标题翻译：有机发光二极管平板光源装置
公开(公告)号：US08421064B2
公开(公告)日：2013-04-16
申请号：US13078095
申请日：2011-04-01
申请人： Jun Han Han , Hye Yong Chu , Jeong Ik Lee , Doo Hee Cho , Jong Hee Lee , Joo Won Lee , Jin Wook Shin
发明人： Jun Han Han , Hye Yong Chu , Jeong Ik Lee , Doo Hee Cho , Jong Hee Lee , Joo Won Lee , Jin Wook Shin
IPC分类号： H01L29/08 , H01L35/24 , H01L51/00
CPC分类号： H05B33/10 , H01L27/3288 , H01L51/5212 , H01L51/5228 , H01L51/56 , H05B33/26
摘要： Provided are an organic-light-emitting-diode (OLED) flat-panel light-source apparatus and a method of manufacturing the same. The device includes an anode and a cathode, to which externally applied power is supplied, disposed on a substrate, an organic emission layer (EML) interposed between the anode and the cathode and configured to emit light due to power supplied through the anode and the cathode, and a subsidiary electrode layer including a plurality of subsidiary electrodes bonded to the anode or the cathode and configured to supply power to the anode or the cathode or electrically insulated from the anode or the cathode and configured to supply power to other emission regions.
摘要翻译：提供一种有机发光二极管（OLED）平板光源装置及其制造方法。该装置包括阳极和阴极，外部施加的功率被供应到其上，设置在基板上，有机发射层（EML）插入在阳极和阴极之间并且被配置为由于通过阳极提供的功率而发光，阴极和辅助电极层，其包括结合到阳极或阴极的多个辅助电极，并且被配置为向阳极或阴极供电或者与阳极或阴极电绝缘并且被配置为向其它发射区域供电。

3. 发明授权

US08408960B2 Method of fabricating an organic light emitting diode using phase separation 有权
标题翻译：使用相分离制造有机发光二极管的方法
公开(公告)号：US08408960B2
公开(公告)日：2013-04-02
申请号：US13405779
申请日：2012-02-27
申请人： Doo Hee Cho , Jeong Ik Lee , Jin Wook Shin , Jong Hee Lee , Hye Yong Chu , Joo Won Lee , Jun Han Han
发明人： Doo Hee Cho , Jeong Ik Lee , Jin Wook Shin , Jong Hee Lee , Hye Yong Chu , Joo Won Lee , Jun Han Han
IPC分类号： H01J9/18
CPC分类号： H01L51/5275
摘要： A method of fabricating an organic light emitting diode using phase separation. The method includes preparing a transparent substrate. A first light path control layer is formed on the transparent substrate. The first light path control layer includes a mixture of a first medium and a second medium having a lower refractive index than the first medium using the phase separation. An anode, an organic emission layer, and a cathode are sequentially stacked on the first light path control layer. In this method, an OLED with improved light extraction efficiency can be fabricated using a simple and inexpensive process.
摘要翻译：使用相分离制造有机发光二极管的方法。该方法包括制备透明基底。在透明基板上形成第一光路控制层。第一光路控制层包括第一介质和第二介质的混合物，其具有比使用相分离的第一介质更低的折射率。阳极，有机发光层和阴极依次堆叠在第一光路控制层上。在该方法中，可以使用简单且廉价的工艺来制造具有提高光提取效率的OLED。

4. 发明申请

US20110279021A1 ORGANIC LIGHT EMITTING DIODE PANEL FOR LIGHTING 有权
标题翻译：有机发光二极管面板
公开(公告)号：US20110279021A1
公开(公告)日：2011-11-17
申请号：US13105345
申请日：2011-05-11
申请人： Hye Yong CHU , Jeong Ik Lee , Doo Hee Cho , Jun Han Han , Joo Won Lee , Jin Wook Shin , Jong Hee Lee
发明人： Hye Yong CHU , Jeong Ik Lee , Doo Hee Cho , Jun Han Han , Joo Won Lee , Jin Wook Shin , Jong Hee Lee
IPC分类号： H01J1/63
CPC分类号： H01L51/5203 , H01L51/524 , H01L51/5243 , H01L51/5246 , H01L2251/5361 , H01L2251/566
摘要： Provided is an organic light emitting diode (OLED) panel for lighting, including an organic layer emitting light by reaction in response to power supplied by a positive electrode and a negative electrode, a protection cap protecting the organic layer from external moisture and oxygen, a cover film attached to upper surfaces of the positive electrode and negative electrode, and serving as a ground for the positive electrode and the negative electrode, and a conductive metal layer grounding the positive electrode and the negative electrode to the cover film.
摘要翻译：提供了一种用于照明的有机发光二极管（OLED）面板，包括响应于由正电极和负电极提供的电力进行反应而发光的有机层，保护有机层免受外部水分和氧气的保护帽，覆盖膜附接到正极和负极的上表面，并且用作正极和负极的接地，导电金属层将正极和负极接地到覆盖膜。

5. 发明申请

US20110248309A1 ORGANIC-LIGHT-EMITTING-DIODE FLAT-PANEL LIGHT-SOURCE APPARATUS AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：有机发光二极管平板光源装置及其制造方法
公开(公告)号：US20110248309A1
公开(公告)日：2011-10-13
申请号：US13078095
申请日：2011-04-01
申请人： Jun Han HAN , Hye Yong Chu , Jeong Ik Lee , Doo Hee Cho , Jong Hee Lee , Joo Won Lee , Jin Wook Shin
发明人： Jun Han HAN , Hye Yong Chu , Jeong Ik Lee , Doo Hee Cho , Jong Hee Lee , Joo Won Lee , Jin Wook Shin
IPC分类号： H01L33/36
CPC分类号： H05B33/10 , H01L27/3288 , H01L51/5212 , H01L51/5228 , H01L51/56 , H05B33/26
摘要： Provided are an organic-light-emitting-diode (OLED) flat-panel light-source apparatus and a method of manufacturing the same. The device includes an anode and a cathode, to which externally applied power is supplied, disposed on a substrate, an organic emission layer (EML) interposed between the anode and the cathode and configured to emit light due to power supplied through the anode and the cathode, and a subsidiary electrode layer including a plurality of subsidiary electrodes bonded to the anode or the cathode and configured to supply power to the anode or the cathode or electrically insulated from the anode or the cathode and configured to supply power to other emission regions.
摘要翻译：提供一种有机发光二极管（OLED）平板光源装置及其制造方法。该装置包括阳极和阴极，外部施加的功率被供应到其上，设置在基板上，有机发射层（EML）插入在阳极和阴极之间并且被配置为由于通过阳极提供的功率而发光，阴极和辅助电极层，其包括结合到阳极或阴极的多个辅助电极，并且被配置为向阳极或阴极供电或者与阳极或阴极电绝缘并且被配置为向其它发射区域供电。

6. 发明申请

US20100006837A1 COMPOSITION FOR OXIDE SEMICONDUCTOR THIN FILM, FIELD EFFECT TRANSISTOR USING THE COMPOSITION AND METHOD OF FABRICATING THE TRANSISTOR 审中-公开
标题翻译：用于氧化物半导体薄膜的组合物，使用该组合物的场效应晶体管和制造晶体管的方法
公开(公告)号：US20100006837A1
公开(公告)日：2010-01-14
申请号：US12496558
申请日：2009-07-01
申请人： Doo Hee Cho , Sang Hee Park , Chi Sun Hwang , Hye Yong Chu , Kyoung Ik Cho , Shin Hyuk Yang , Chun Won Byun , Eun Suk Park , Oh Sang Kwon , Min Ki Ryu , Jae Heon Shin , Woo Seok Cheong , Sung Mook Chung , Jeong Ik Lee
发明人： Doo Hee Cho , Sang Hee Park , Chi Sun Hwang , Hye Yong Chu , Kyoung Ik Cho , Shin Hyuk Yang , Chun Won Byun , Eun Suk Park , Oh Sang Kwon , Min Ki Ryu , Jae Heon Shin , Woo Seok Cheong , Sung Mook Chung , Jeong Ik Lee
IPC分类号： H01L29/786 , H01L21/336 , H01B1/08
CPC分类号： H01L29/7869 , C23C14/08 , H01L29/247
摘要： Provided are a composition for an oxide semiconductor thin film, a field effect transistor using the same and a method of fabricating the field effect transistor. The composition includes an aluminum oxide, a zinc oxide, an indium oxide and a tin oxide. The thin film formed of the composition is in amorphous phase. The field effect transistor having an active layer formed of the composition can have an improved electrical characteristic and be fabricated by a low temperature process.
摘要翻译：提供了一种用于氧化物半导体薄膜的组合物，使用该组合物的场效应晶体管和制造场效应晶体管的方法。该组合物包括氧化铝，氧化锌，氧化铟和氧化锡。由组合物形成的薄膜是非晶相。具有由组合物形成的有源层的场效应晶体管可以具有改进的电特性并通过低温工艺制造。

7. 发明申请

US20090261389A1 COMPOSITION FOR OXIDE SEMICONDUCTOR THIN FILM, FIELD EFFECT TRANSISTOR USING THE COMPOSITION, AND METHOD OF FABRICATING THE TRANSISTOR 有权
标题翻译：氧化物半导体薄膜的组合物，使用该组合物的场效应晶体管以及制造晶体管的方法
公开(公告)号：US20090261389A1
公开(公告)日：2009-10-22
申请号：US12331688
申请日：2008-12-10
申请人： Doo Hee Cho , Shin Hyuk Yang , Chun Won Byun , Chi Sun Hwang , Hye Yong Chu , Kyoung Ik Cho
发明人： Doo Hee Cho , Shin Hyuk Yang , Chun Won Byun , Chi Sun Hwang , Hye Yong Chu , Kyoung Ik Cho
IPC分类号： H01L29/78 , H01L21/8232 , H01B1/02
CPC分类号： H01L29/7869 , H01L29/66969
摘要： A composition for an oxide semiconductor thin film, a field effect transistor (FET) using the composition, and a method of fabricating the FET are provided. The composition includes an aluminum oxide, a zinc oxide, and a tin oxide. The thin film formed of the composition remains in amorphous phase at a temperature of 400° C or less. The FET using an active layer formed of the composition has improved electrical characteristics and can be fabricated using a low-temperature process without expensive raw materials, such as In and Ga.
摘要翻译：提供了一种用于氧化物半导体薄膜的组合物，使用该组合物的场效应晶体管（FET）及其制造方法。该组合物包括氧化铝，氧化锌和氧化锡。由组合物形成的薄膜在400℃以下的温度下保持非晶相。使用由组合物形成的有源层的FET具有改善的电特性，并且可以使用低温工艺制造而不昂贵的原料，例如In和Ga。

8. 发明授权

US08017045B2 Composition for oxide semiconductor thin film and field effect transistor using the composition 有权
标题翻译：使用该组合物的氧化物半导体薄膜和场效应晶体管的组成
公开(公告)号：US08017045B2
公开(公告)日：2011-09-13
申请号：US12331688
申请日：2008-12-10
申请人： Doo Hee Cho , Shin Hyuk Yang , Chun Won Byun , Chi Sun Hwang , Hye Yong Chu , Kyoung Ik Cho
发明人： Doo Hee Cho , Shin Hyuk Yang , Chun Won Byun , Chi Sun Hwang , Hye Yong Chu , Kyoung Ik Cho
IPC分类号： H01B1/02
CPC分类号： H01L29/7869 , H01L29/66969
摘要： Provided is a composition for an oxide semiconductor thin film and a field effect transistor (FET) using the composition. The composition includes from about 50 to about 99 mol % of a zinc oxide (ZnO); from about 0.5 to 49.5 mol % of a tin oxide (SnOx); and remaining molar percentage of an aluminum oxide (AlOx). The thin film formed of the composition remains in amorphous phase at a temperature of 400° C. or less. The FET includes an active layer formed of the composition and has improved electrical characteristics. The FET can be fabricated using a low-temperature process without expensive raw materials, such as In and Ga.
摘要翻译：提供了使用该组合物的氧化物半导体薄膜和场效应晶体管（FET）的组合物。该组合物包含约50-约99mol％的氧化锌（ZnO）; 约0.5〜49.5摩尔％的氧化锡（SnO x）; 和氧化铝（AlOx）的剩余摩尔百分数。由该组合物形成的薄膜在400℃以下的温度下保持为非晶相。 FET包括由该组合物形成的有源层并具有改善的电特性。可以使用低温工艺制造FET，而不需要昂贵的原材料，例如In和Ga。

9. 发明申请

US20070096242A1 Photo thin film transistor having photoconductive layer including chalcogenide element and unit cell of image sensor using the same 有权
标题翻译：具有光电导层的照片薄膜晶体管，包括硫属元素元素和使用其的图像传感器的单元
公开(公告)号：US20070096242A1
公开(公告)日：2007-05-03
申请号：US11481599
申请日：2006-07-06
申请人： Ki Bong Song , Doo Hee Cho
发明人： Ki Bong Song , Doo Hee Cho
IPC分类号： H01L31/06
CPC分类号： H01L31/095
摘要： A photo thin film transistor having a photoconductive layer including a chalcogenide element and a unit cell of an image sensor using the same are provided. The photo thin film transistor includes a glass substrate; a photoconductive layer that is formed of GST including a chalcogenide element, is disposed on the glass substrate, and absorbs light and generates an optical current; a source electrode and a drain electrode that are formed on respective sides of the photoconductive layer and form a path for the optical current generated by the photoconductive layer; a gate insulating layer formed on the photoconductive layer; and a gate electrode that is formed on the gate insulating layer and turns the optical current on or off. The photo thin film transistor includes amorphous GST including a chalcogenide element forming a photoconductive layer, thereby providing very high photoconductivity.
摘要翻译：提供具有包含硫属元素元素的光电导层和使用其的图像传感器的单元的光电薄膜晶体管。所述光电薄膜晶体管包括玻璃基板; 在玻璃基板上设置由含有硫族化物元素的GST形成的光电导层，吸收光并产生光电流; 源电极和漏电极，形成在光电导层的两侧，并形成由光电导层产生的光电流的路径; 形成在光电导层上的栅极绝缘层; 以及形成在栅极绝缘层上并打开或关闭光电流的栅电极。该光电薄膜晶体管包括含有形成光电导层的硫属元素元素的无定形GST，从而提供非常高的光电导率。

10. 发明授权

US06785449B2 Multimode interference coupler, multi-layer optical planar waveguide using the same and method of manufacturing the same 失效
标题翻译：多模干涉耦合器，多层光学平面波导使用及其制造方法相同
公开(公告)号：US06785449B2
公开(公告)日：2004-08-31
申请号：US10213824
申请日：2002-08-06
申请人： Jong Moo Lee , Doo Hee Cho , Joon Tae Ahn , Myung Hyun Lee , Kyong Hon Kim
发明人： Jong Moo Lee , Doo Hee Cho , Joon Tae Ahn , Myung Hyun Lee , Kyong Hon Kim
IPC分类号： G02B642
CPC分类号： G02B6/2813 , G02B6/12002
摘要： The present invention relates to a multi-layer optical planar waveguide which is vertically coupled using multimode-interference couplers and to the method of manufacturing the same. The purpose of this invention is to increase the degree of integration on the multi-layer optical planar waveguide by applying the concept of via holes of the multi-layer printed circuit board (MLPCB) used in electronic circuits to the optical waveguide devices. According to the present invention, particularly, a multimode interference coupler of a stepped structure has the higher coupling ratio at relatively short length of interference than the usual multimode interference coupler. The present invention can implement a multimode interference coupler at a specialized spot while reducing evanescent field interference between the upper and lower optical waveguides out of the spot by separating the layers enough.
摘要翻译：本发明涉及使用多模干扰耦合器垂直耦合的多层光学平面波导及其制造方法。本发明的目的是通过将电子电路中使用的多层印刷电路板（MLPCB）的通孔的概念应用于光波导器件来增加多层光学平面波导上的集成度。根据本发明，特别地，阶梯式结构的多模干涉耦合器具有比通常的多模干涉耦合器在相对短的干涉长度下具有更高的耦合比。本发明可以在特定的位置实现多模干涉耦合器，同时通过将层分离足够的距离，将上下光波导之间的消逝场干扰减少出现点。

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