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1. 发明申请

US20110188867A1 DQPSK DEMODULATOR 有权
公开(公告)号：US20110188867A1
公开(公告)日：2011-08-04
申请号：US12978244
申请日：2010-12-23
申请人： Huiping Li , Xiaolin Chen , Fan Chen , Fahua Lan , Kevin Dapend Zhang
发明人： Huiping Li , Xiaolin Chen , Fan Chen , Fahua Lan , Kevin Dapend Zhang
IPC分类号： H04B10/04
摘要： A phase shift keyed demodulator includes first and second beam splitters, a first optical path, a second optical path, and a wavelength tuner. The first beam splitter splits an input signal into first and second output signals. The second beam splitter splits each first and second output signal into a transmitted signal and a reflected signal. The first optical path includes an optical path of each transmitted signal from a beam splitting surface to a reflector and back to the beam splitting surface. The second optical path includes an optical path of each reflected signal from the beam splitting surface to a mirror surface and back to the beam splitting surface. A path difference introduces a delay between the transmitted signal and the reflected signal. The wavelength tuner tunes the demodulator to a predetermined central wavelength and introduces a phase shift between first and second transmitted signals.
摘要翻译：相移键控解调器包括第一和第二分束器，第一光路，第二光路和波长调谐器。第一分束器将输入信号分成第一和第二输出信号。第二分束器将每个第一和第二输出信号分离成发射信号和反射信号。第一光路包括从分束表面到反射器的每个发射信号的光路，并且返回到分束表面。第二光路包括从分束表面到镜面并且返回到分束表面的每个反射信号的光路。路径差引入发射信号和反射信号之间的延迟。波长调谐器将解调器调谐到预定的中心波长，并引入第一和第二发射信号之间的相移。

2. 发明授权

US08433204B2 DQPSK demodulator 有权
标题翻译： DQPSK解调器
公开(公告)号：US08433204B2
公开(公告)日：2013-04-30
申请号：US12978244
申请日：2010-12-23
申请人： Huiping Li , Xiaolin Chen , Fan Chen , Fahua Lan , Dapeng Kevin Zhang
发明人： Huiping Li , Xiaolin Chen , Fan Chen , Fahua Lan , Dapeng Kevin Zhang
IPC分类号： H04B10/04
摘要： A phase shift keyed demodulator includes first and second beam splitters, a first optical path, a second optical path, and a wavelength tuner. The first beam splitter splits an input signal into first and second output signals. The second beam splitter splits each first and second output signal into a transmitted signal and a reflected signal. The first optical path includes an optical path of each transmitted signal from a beam splitting surface to a reflector and back to the beam splitting surface. The second optical path includes an optical path of each reflected signal from the beam splitting surface to a mirror surface and back to the beam splitting surface. A path difference introduces a delay between the transmitted signal and the reflected signal. The wavelength tuner tunes the demodulator to a predetermined central wavelength and introduces a phase shift between first and second transmitted signals.
摘要翻译：相移键控解调器包括第一和第二分束器，第一光路，第二光路和波长调谐器。第一分束器将输入信号分成第一和第二输出信号。第二分束器将每个第一和第二输出信号分离成发射信号和反射信号。第一光路包括从分束表面到反射器的每个发射信号的光路，并且返回到分束表面。第二光路包括从分束表面到镜面并返回到分束表面的每个反射信号的光路。路径差引入发射信号和反射信号之间的延迟。波长调谐器将解调器调谐到预定的中心波长，并引入第一和第二发射信号之间的相移。

3. 发明授权

US08563445B2 Conformal layers by radical-component CVD 有权
标题翻译：通过自由基成分CVD形成保形层
公开(公告)号：US08563445B2
公开(公告)日：2013-10-22
申请号：US13024487
申请日：2011-02-10
申请人： Jingmei Liang , Xiaolin Chen , DongQing Li , Nitin K. Ingle
发明人： Jingmei Liang , Xiaolin Chen , DongQing Li , Nitin K. Ingle
IPC分类号： H01L21/469
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/452 , C23C16/56 , H01L21/02164 , H01L21/02271 , H01L21/02326 , H01L21/76837
摘要： Methods, materials, and systems are described for forming conformal dielectric layers containing silicon and nitrogen (e.g., a silicon-nitrogen-hydrogen (Si—N—H) film) from a carbon-free silicon-and-nitrogen precursor and radical-nitrogen precursor. The carbon-free silicon-and-nitrogen precursor is predominantly excited by contact with the radical-nitrogen precursor. Because the silicon-and-nitrogen film is formed without carbon, the conversion of the film into hardened silicon oxide is done with less pore formation and less volume shrinkage. The deposited silicon-and-nitrogen-containing film may be wholly or partially converted to silicon oxide which allows the optical properties of the conformal dielectric layer to be selectable. The deposition of a thin silicon-and-nitrogen-containing film may be performed at low temperature to form a liner layer in a substrate trench. The low temperature liner layer has been found to improve the wetting properties and allows flowable films to more completely fill the trench.
摘要翻译：描述了用于形成含有硅和氮的保形电介质层（例如，硅 - 氮 - 氢（Si-N-H）膜）的方法，材料和系统，其来自无碳硅氮前驱物和自由基 - 氮前体。主要通过与自由基 - 氮前体接触激发无碳硅和氮前体。由于硅和氮膜不形成碳，所以将薄膜转化成硬化的氧化硅是在较少的孔形成和较小的体积收缩下进行的。沉积的含硅和氮的膜可以全部或部分地转化为氧化硅，这允许保形介电层的光学特性是可选择的。可以在低温下进行薄的含硅和氮的膜的沉积，以在衬底沟槽中形成衬垫层。已经发现低温衬里层改善了润湿性能，并允许可流动膜更完全地填充沟槽。

4. 发明申请

US20120238108A1 TWO-STAGE OZONE CURE FOR DIELECTRIC FILMS 审中-公开
标题翻译：用于电介质膜的两级氧化固化
公开(公告)号：US20120238108A1
公开(公告)日：2012-09-20
申请号：US13227161
申请日：2011-09-07
申请人： Xiaolin Chen , Jingmei Liang , Nitin K. Ingle , Shankar Venkataraman
发明人： Xiaolin Chen , Jingmei Liang , Nitin K. Ingle , Shankar Venkataraman
IPC分类号： H01L21/316
CPC分类号： H01L21/02164 , C23C16/345 , C23C16/56 , H01L21/02219 , H01L21/02326 , H01L21/02337 , H01L21/0234 , H01L21/31111
摘要： A method of forming a silicon oxide layer is described. The method increases the oxygen content of a dielectric layer by curing the layer in a two-step ozone cure. The first step involves exposing the dielectric layer to ozone while the second step involves exposing the dielectric layer to ozone excited by a local plasma. This sequence can reduce or eliminate the need for a subsequent anneal following the cure step. The two-step ozone cures may be applied to silicon-and-nitrogen-containing film to convert the films to silicon oxide.
摘要翻译：描述形成氧化硅层的方法。该方法通过在两步臭氧固化中固化该层来增加电介质层的氧含量。第一步涉及将介电层暴露于臭氧，而第二步涉及将电介质层暴露于由局部等离子体激发的臭氧。该顺序可以减少或消除在固化步骤之后的后续退火的需要。两步臭氧治疗可以应用于含硅和氮的膜以将膜转化为氧化硅。

5. 发明申请

US20060219169A1 HDP-CVD SEASONING PROCESS FOR HIGH POWER HDP-CVD GAPFIL TO IMPROVE PARTICLE PERFORMANCE 审中-公开
标题翻译：用于高功率HDP-CVD GAPFIL以提高颗粒性能的HDP-CVD季节性过程
公开(公告)号：US20060219169A1
公开(公告)日：2006-10-05
申请号：US11422858
申请日：2006-06-07
申请人： Xiaolin Chen , Jason Bloking
发明人： Xiaolin Chen , Jason Bloking
IPC分类号： B05C11/00 , C23C16/00
CPC分类号： H01L21/02164 , C23C16/4404 , H01L21/02274 , H01L21/31612 , Y10S438/905
摘要： A method of operating a substrate processing chamber that includes, prior to a substrate processing operation, flowing a seasoning gas comprising silane and oxygen into said chamber at a flow ratio of greater than or equal to about 1.6:1 oxygen to silane to deposit a silicon oxide film over at least one aluminum nitride nozzle exposed to an interior portion of the chamber. Also, a substrate processing system that includes a housing, a gas delivery system for introducing a seasoning gas into a vacuum chamber, where the gas delivery system comprises one or more aluminum nitride nozzles exposed to the vacuum chamber, a controller and a memory having a program having instructions for controlling the gas delivery system to flow a seasoning gas that has an oxygen to silane ratio greater than or equal to about 1.6:1 to deposit a silicon oxide film on the aluminum nitride nozzles.
摘要翻译：一种操作基板处理室的方法，该方法包括在基板处理操作之前，将含有硅烷和氧气的调味气体以大于或等于约1.6:1的氧气流量流入所述室内以沉积硅在至少一个氮化铝喷嘴上暴露于室的内部的氧化膜。另外，一种基板处理系统，其包括壳体，用于将调节气体引入真空室的气体输送系统，其中气体输送系统包括暴露于真空室的一个或多个氮化铝喷嘴，控制器和具有具有用于控制气体输送系统以使氧化硅烷比大于或等于约1.6:1的调味气体流过以在氮化铝喷嘴上沉积氧化硅膜的说明书的程序。

6. 发明申请

US20130149462A1 SURFACE TREATMENT AND DEPOSITION FOR REDUCED OUTGASSING 有权
标题翻译：表面处理和沉积减少出口
公开(公告)号：US20130149462A1
公开(公告)日：2013-06-13
申请号：US13494341
申请日：2012-06-12
申请人： Jingmei Liang , Xiaolin Chen , Nitin K. Ingle , Shankar Venkataraman
发明人： Jingmei Liang , Xiaolin Chen , Nitin K. Ingle , Shankar Venkataraman
IPC分类号： C23C16/40
CPC分类号： C23C16/401 , C23C16/345 , C23C16/452 , C23C16/45514 , C23C16/45565 , C23C16/505 , C23C16/56 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02274
摘要： A method of forming a dielectric layer is described. The method first deposits a silicon-nitrogen-and-hydrogen-containing (polysilazane) layer by radical-component chemical vapor deposition (CVD). The silicon-nitrogen-and-hydrogen-containing layer is formed by combining a radical precursor (excited in a remote plasma) with an unexcited carbon-free silicon precursor. A silicon oxide capping layer may be formed from a portion of the carbon-free silicon-nitrogen-and-hydrogen-containing layer to avoid time-evolution of underlying layer properties prior to conversion into silicon oxide. Alternatively, the silicon oxide capping layer is formed over the silicon-nitrogen-and-hydrogen-containing layer. Either method of formation involves the formation of a local plasma within the substrate processing region.
摘要翻译：描述形成电介质层的方法。该方法首先通过自由基组分化学气相沉积（CVD）沉积含硅氮和氢的（聚硅氮烷）层。通过将自由基前体（在远程等离子体中激发）与未煅烧的无碳硅前体组合而形成含硅和氮的层。氧化硅覆盖层可以由一部分无碳硅 - 含氮和氢的层形成，以避免在转化成氧化硅之前下层性质的时间演变。或者，氧化硅覆盖层形成在含硅 - 氮和氢的层之上。任一种形成方法都涉及在衬底处理区域内形成局部等离子体。

7. 发明申请

US20120177846A1 RADICAL STEAM CVD 审中-公开
标题翻译：放射性CVD
公开(公告)号：US20120177846A1
公开(公告)日：2012-07-12
申请号：US13236388
申请日：2011-09-19
申请人： DongQing Li , Jingmei Liang , Xiaolin Chen , Nitin K. Ingle
发明人： DongQing Li , Jingmei Liang , Xiaolin Chen , Nitin K. Ingle
IPC分类号： C23C16/40 , C23C16/56 , C23C16/50
CPC分类号： C23C16/308 , C23C16/045 , C23C16/452 , C23C16/56
摘要： Methods of forming silicon oxide layers are described. The methods include concurrently combining plasma-excited (radical) steam with an unexcited silicon precursor. Nitrogen may be supplied through the plasma-excited route (e.g. by adding ammonia to the steam) and/or by choosing a nitrogen-containing unexcited silicon precursor. The methods result in depositing a silicon-oxygen-and-nitrogen-containing layer on a substrate. The oxygen content of the silicon-oxygen-and-nitrogen-containing layer is then increased to form a silicon oxide layer which may contain little or no nitrogen. The increase in oxygen content may be brought about by annealing the layer in the presence of an oxygen-containing atmosphere and the density of the film may be increased further by raising the temperature even higher in an inert environment.
摘要翻译：描述形成氧化硅层的方法。这些方法包括同时将等离子体激发（自由基）蒸汽与未催化的硅前体组合。可以通过等离子体激发途径（例如通过向蒸汽中加入氨）和/或通过选择含氮的未催化的硅前体来供应氮。该方法导致在衬底上沉积含硅 - 氧和氮的层。然后增加硅 - 氧 - 和 - 含氮层的氧含量以形成可能含有很少或不含氮的氧化硅层。氧含量的增加可以通过在含氧气氛的存在下退火层而实现，并且通过在惰性环境中更高的温度升高可以进一步提高膜的密度。

8. 发明申请

US20120190178A1 POLYSILICON FILMS BY HDP-CVD 失效
标题翻译：聚硅氧烷膜通过HDP-CVD
公开(公告)号：US20120190178A1
公开(公告)日：2012-07-26
申请号：US13089966
申请日：2011-04-19
申请人： Anchuan Wang , Xiaolin Chen , Young S. Lee
发明人： Anchuan Wang , Xiaolin Chen , Young S. Lee
IPC分类号： H01L21/20 , H01L21/3205
CPC分类号： H01L21/0262 , C23C16/0245 , C23C16/045 , C23C16/24 , H01L21/02529 , H01L21/02532 , H01L21/02573 , H01L21/02595 , H01L21/28556
摘要： Methods of forming polysilicon layers are described. The methods include forming a high-density plasma from a silicon precursor in a substrate processing region containing the deposition substrate. The described methods produce polycrystalline films at reduced substrate temperature (e.g.
摘要翻译：描述形成多晶硅层的方法。所述方法包括在包含沉积衬底的衬底处理区域中从硅前体形成高密度等离子体。所描述的方法相对于现有技术在降低的衬底温度（例如<500℃）下产生多晶膜。偏置等离子体功率调整的可用性进一步使得能够调整形成的多晶硅层的共形性。当掺杂物被包括在高密度等离子体中时，它们可以以不需要单独的激活步骤的方式结合到多晶硅层中。

9. 发明申请

US20100168407A1 Quaternized Carboxymethyl Chitosan Derivatives and Preparation Method Thereof 审中-公开
标题翻译：季铵化羧甲基壳聚糖衍生物及其制备方法
公开(公告)号：US20100168407A1
公开(公告)日：2010-07-01
申请号：US12063227
申请日：2006-07-24
申请人： Pengcheng Li , Zhanyong Guo , Song Liu , Ronge Xing , Huahua Yu , Pibo Wang , Xiaolin Chen , Cuiping Li
发明人： Pengcheng Li , Zhanyong Guo , Song Liu , Ronge Xing , Huahua Yu , Pibo Wang , Xiaolin Chen , Cuiping Li
IPC分类号： C08B37/08
CPC分类号： A01N43/16 , A61K31/14 , C08B37/003
摘要： The invention relates to a novel kind of chitosan derivative, specifically to quaternized carboxymethyl chitosand derivatives and preparation method. Chitosan with different molecular weight reacts with chloroactic acid give rise to carboxymethyl chitosan. After reaction of Schiff based, deoxidized and quaternized, quaternized carboxymethyl chitosan is obtained. This kind of chitosan derivative have better water-solubility and better antifungal activity, which can used in the fields of medicine and agriculture.
摘要翻译：本发明涉及一种新型壳聚糖衍生物，特别涉及季铵化羧甲基壳聚糖衍生物及其制备方法。不同分子量的壳聚糖与氯代酸反应产生羧甲基壳聚糖。在基于Schiff的基础上，脱氧和季铵化后，得到季铵化的羧甲基壳聚糖。这种壳聚糖衍生物具有更好的水溶性和更好的抗真菌活性，可用于医药和农业领域。

10. 发明授权

US07465680B2 Post deposition plasma treatment to increase tensile stress of HDP-CVD SIO2 失效
标题翻译：后沉积等离子体处理以增加HDP-CVD SIO2的拉伸应力
公开(公告)号：US07465680B2
公开(公告)日：2008-12-16
申请号：US11221303
申请日：2005-09-07
申请人： Xiaolin Chen , Srinivas D. Nemani , DongQing Li , Jeffrey C. Munro , Marlon E. Menezes
发明人： Xiaolin Chen , Srinivas D. Nemani , DongQing Li , Jeffrey C. Munro , Marlon E. Menezes
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/3105 , C23C16/402 , C23C16/56 , H01L21/02164 , H01L21/02274 , H01L21/0234 , H01L21/31612
摘要： A plasma treatment process for increasing the tensile stress of a silicon wafer is described. Following deposition of a dielectric layer on a substrate, the substrate is lifted to an elevated position above the substrate receiving surface and exposed to a plasma treatment process which treats both the top and bottom surface of the wafer and increases the tensile stress of the deposited layer. Another embodiment of the invention involves biasing of the substrate prior to plasma treatment to bombard the wafer with plasma ions and raise the temperature of the substrate. In another embodiment of the invention, a two-step plasma treatment process can be used where the substrate is first exposed to a plasma at a processing position directly after deposition, and then raised to an elevated position where both the top and bottom of the wafer are exposed to the plasma.
摘要翻译：描述了用于增加硅晶片的拉伸应力的等离子体处理工艺。在基底上沉积介电层之后，将衬底提升到衬底接收表面上方的升高位置并暴露于等离子体处理工艺，其处理晶片的顶表面和底表面并增加沉积层的拉伸应力。本发明的另一实施例涉及在等离子体处理之前偏压衬底以用等离子体离子轰击晶片并提高衬底的温度。在本发明的另一个实施例中，可以使用两步等离子体处理工艺，其中首先在沉积后直接在处理位置处暴露于等离子体，然后升高到晶片的顶部和底部两者的升高位置暴露于等离子体。

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