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    • 5. 发明授权
    • System and method for reducing power-on-transient current magnitude
    • 用于降低功率瞬态电流幅度的系统和方法
    • US07633314B2
    • 2009-12-15
    • US11563868
    • 2006-11-28
    • Hugh MairRolf Lagerquist
    • Hugh MairRolf Lagerquist
    • H03K19/096
    • H03K17/164
    • System and method for reducing power-on transient current magnitude on distributed header switches. A preferred embodiment comprises a distributed header switch coupling a circuit to a power supply, the distributed header switch comprising a linear sequence of combination switches, each combination switches containing a pre-charge switch and a header switch. A first-pass involves sequentially turning on each of the pre-charge switches, which enables a voltage level at the distributed header switch to approach that of a final voltage level and a second-pass involves sequentially turning on each of the header switches. Since the voltage level at the distributed header switches is close to the final voltage level, a resulting transient current is small in magnitude.
    • 用于降低分布式报头交换机上的上电瞬态电流幅度的系统和方法。 优选实施例包括将电路耦合到电源的分布式头部开关,分配的头部开关包括线性顺序的组合开关,每个组合开关包含预充电开关和头部开关。 一次通过涉及顺序打开每个预充电开关,这使得分配的标头开关处的电压电平接近最终电压电平的电压电平,而第二次通过涉及顺序地接通每个标头开关。 由于分布式标题开关处的电压电平接近最终的电压电平,所以产生的瞬态电流的幅度很小。
    • 7. 发明申请
    • Integrated Header Switch with Low-Leakage PMOS and High-Leakage NMOS Transistors
    • 具有低泄漏PMOS和高泄漏NMOS晶体管的集成头开关
    • US20070120578A1
    • 2007-05-31
    • US11564405
    • 2006-11-29
    • Hugh MairDavid ScottRolf Lagerquist
    • Hugh MairDavid ScottRolf Lagerquist
    • H03K19/094
    • H03K17/6872H03K19/0013H03K19/00315H03K2217/0036
    • System and method for providing power with a large on-current and small off-current to circuitry in an integrated circuit. A preferred embodiment comprises a switch for providing power to circuits in an integrated circuit made from a PMOS transistor and an NMOS transistor coupled in parallel. Each transistor's gate terminal is coupled to a separate control signal line. The PMOS transistor provides current to the circuits at high voltage supply levels while the NMOS transistor provides current to the circuits at low voltage supply levels, wherein the size of the PMOS and NMOS transistor can be changed during design to meet power requirements. Depending upon power requirements, multiple PMOS and NMOS transistors may be used. The combination of PMOS and NMOS transistors permit the use of limited fabrication processes wherein transistor widths can be limited.
    • 为集成电路中的电路提供大的导通电流和小的截止电流的系统和方法。 优选实施例包括用于向由PMOS晶体管和并联的NMOS晶体管制成的集成电路中的电路提供功率的开关。 每个晶体管的栅极端子耦合到单独的控制信号线。 PMOS晶体管以高电压电源电平向电路提供电流,而NMOS晶体管以低电压电源电平向电路提供电流,其中可以在设计期间改变PMOS和NMOS晶体管的尺寸以满足功率需求。 根据功率要求,可以使用多个PMOS和NMOS晶体管。 PMOS和NMOS晶体管的组合允许使用有限的制造工艺,其中可以限制晶体管宽度。
    • 9. 发明申请
    • System and Method for Reducing Power-On-Transient Current Magnitude
    • 降低上电瞬时电流幅度的系统和方法
    • US20070103202A1
    • 2007-05-10
    • US11563868
    • 2006-11-28
    • Hugh MairRolf Lagerquist
    • Hugh MairRolf Lagerquist
    • H03K19/096
    • H03K17/164
    • System and method for reducing power-on transient current magnitude on distributed header switches. A preferred embodiment comprises a distributed header switch coupling a circuit to a power supply, the distributed header switch comprising a linear sequence of combination switches, each combination switches containing a pre-charge switch and a header switch. A first-pass involves sequentially turning on each of the pre-charge switches, which enables a voltage level at the distributed header switch to approach that of a final voltage level and a second-pass involves sequentially turning on each of the header switches. Since the voltage level at the distributed header switches is close to the final voltage level, a resulting transient current is small in magnitude.
    • 用于降低分布式报头交换机上的上电瞬态电流幅度的系统和方法。 优选实施例包括将电路耦合到电源的分布式头部开关,分配的头部开关包括线性顺序的组合开关,每个组合开关包含预充电开关和头部开关。 一次通过涉及顺序打开每个预充电开关,这使得分配的标头开关处的电压电平接近最终电压电平的电压电平,而第二次通过涉及顺序地接通每个标头开关。 由于分布式标题开关处的电压电平接近最终的电压电平,所以产生的瞬态电流的幅度很小。
    • 10. 发明申请
    • Integrated header switch with low-leakage PMOS and high-leakage NMOS transistors
    • 具有低泄漏PMOS和高泄漏NMOS晶体管的集成标头开关
    • US20060033525A1
    • 2006-02-16
    • US10916135
    • 2004-08-11
    • Hugh MairDavid ScottRolf Lagerquist
    • Hugh MairDavid ScottRolf Lagerquist
    • H03K19/003
    • H03K17/6872H03K19/0013H03K19/00315H03K2217/0036
    • System and method for providing power with a large on-current and small off-current to circuitry in an integrated circuit. A preferred embodiment comprises a switch for providing power to circuits in an integrated circuit made from a PMOS transistor and an NMOS transistor coupled in parallel. Each transistor's gate terminal is coupled to a separate control signal line. The PMOS transistor provides current to the circuits at high voltage supply levels while the NMOS transistor provides current to the circuits at low voltage supply levels, wherein the size of the PMOS and NMOS transistor can be changed during design to meet power requirements. Depending upon power requirements, multiple PMOS and NMOS transistors may be used. The combination of PMOS and NMOS transistors permit the use of limited fabrication processes wherein transistor widths can be limited.
    • 为集成电路中的电路提供大的导通电流和小的截止电流的系统和方法。 优选实施例包括用于向由PMOS晶体管和并联的NMOS晶体管制成的集成电路中的电路提供功率的开关。 每个晶体管的栅极端子耦合到单独的控制信号线。 PMOS晶体管以高电压电源电平向电路提供电流,而NMOS晶体管以低电压电源电平向电路提供电流,其中可以在设计期间改变PMOS和NMOS晶体管的尺寸以满足功率需求。 根据功率要求,可以使用多个PMOS和NMOS晶体管。 PMOS和NMOS晶体管的组合允许使用有限的制造工艺,其中可以限制晶体管宽度。