专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20060151003A1 Brush for cleaning wafer 失效
标题翻译：刷子清洗晶圆
公开(公告)号：US20060151003A1
公开(公告)日：2006-07-13
申请号：US11032858
申请日：2005-01-10
申请人： Huey-Chiang Liou , Alexander Tregub , Mansour Moinpour
发明人： Huey-Chiang Liou , Alexander Tregub , Mansour Moinpour
IPC分类号： C23G1/00 , B08B7/00 , B05D3/02 , B05D5/00 , H01L21/304
CPC分类号： H01L21/67046 , B08B1/04 , B08B3/04
摘要： In a formulation of a wafer cleaning brush, forming a polymer solution with a plurality of nano-scale porogens or with a synthetic pore forming agent and curing the polymer solution to form a porous polymeric material.
摘要翻译：在晶片清洁刷的配方中，用多个纳米级致孔剂或合成成孔剂形成聚合物溶液并固化聚合物溶液以形成多孔聚合材料。

2. 发明授权

US07469443B2 Brush for cleaning wafer 失效
标题翻译：刷子清洗晶圆
公开(公告)号：US07469443B2
公开(公告)日：2008-12-30
申请号：US11032858
申请日：2005-01-10
申请人： Huey-Chiang Liou , Alexander Tregub , Mansour Moinpour
发明人： Huey-Chiang Liou , Alexander Tregub , Mansour Moinpour
IPC分类号： B08B1/04
CPC分类号： H01L21/67046 , B08B1/04 , B08B3/04
摘要： In a formulation of a wafer cleaning brush, forming a polymer solution with a plurality of nano-scale porogens or with a synthetic pore forming agent and curing the polymer solution to form a porous polymeric material.
摘要翻译：在晶片清洁刷的配方中，用多个纳米级致孔剂或合成成孔剂形成聚合物溶液并固化聚合物溶液以形成多孔聚合材料。

3. 发明授权

US07048610B1 Conditioning polishing pad for chemical-mechanical polishing 失效
标题翻译：调理抛光垫进行化学机械抛光
公开(公告)号：US07048610B1
公开(公告)日：2006-05-23
申请号：US11044125
申请日：2005-01-26
申请人： Alexander Tregub , Mansour Moinpour , Victor K. Souw
发明人： Alexander Tregub , Mansour Moinpour , Victor K. Souw
IPC分类号： B24B1/00
CPC分类号： B24B37/20 , B24B37/34 , B24B53/017
摘要： In one embodiment, a CMP pad is conditioned by repeatedly cycling the CMP pad between a first temperature and a second temperature higher than the first temperature to eliminate at least one crystalline area in the CMP pad.
摘要翻译：在一个实施例中，通过在高于第一温度的第一温度和第二温度之间重复循环CMP焊盘来调节CMP焊盘，以消除CMP焊盘中的至少一个结晶区域。

4. 发明授权

US07383723B2 Detecting particle agglomeration in chemical mechanical polishing slurries 有权
标题翻译：检测化学机械抛光浆料中的颗粒团聚
公开(公告)号：US07383723B2
公开(公告)日：2008-06-10
申请号：US11137674
申请日：2005-05-24
申请人： Alexander Tregub , Mansour Moinpour
发明人： Alexander Tregub , Mansour Moinpour
IPC分类号： G01N15/06 , G01N11/00
CPC分类号： G01N11/142 , C09G1/02 , G01N2015/0092
摘要： A method for detecting particle agglomeration in CMP slurries. In accordance with an implementation of the invention, a CMP slurry is tested for abrasive particle agglomeration by applying an ultra high shearing force to the slurry and analyzing its rheological behavior. Through the comparison of slurry rheological behavior, implementations of the invention make it possible to detect particle agglomeration in a slurry and to distinguish between fresh and aged slurries.
摘要翻译：一种用于检测CMP浆料中颗粒聚集的方法。根据本发明的实施方案，通过对浆料施加超高剪切力并分析其流变行为，测试CMP浆料用于研磨颗粒团聚。通过浆料流变行为的比较，本发明的实施使得可以检测浆料中的颗粒聚集并区分新鲜和老化的浆料。

5. 发明申请

US20050287032A1 Anti-bacterial protection to improve performance of post CMP clean brush 审中-公开
标题翻译：抗菌保护提高后CMP干净刷的性能
公开(公告)号：US20050287032A1
公开(公告)日：2005-12-29
申请号：US10877561
申请日：2004-06-24
申请人： Alexander Tregub , Mansour Moinpour
发明人： Alexander Tregub , Mansour Moinpour
IPC分类号： A61L2/10 , A61L2/14 , A61L2/16 , A61L2/232 , H01L21/00 , H01L21/02
CPC分类号： H01L21/67046 , A61L2/10 , A61L2/14 , A61L2/16 , A61L2/232 , H01L21/02052 , H01L21/02065 , H01L21/02074
摘要： A method including providing a residual bacteria-inhibiting property to a post-chemical mechanical polish (post-CMP) brush. A method including forming a post-chemical mechanical polish (post-CMP) brush; and residually modifying a bacteria-inhibiting property of a portion of an exterior surface of the formed brush. An apparatus including a post-chemical mechanical polish (post-CMP) brush including a residual bacteria inhibiting property.
摘要翻译：一种包括向化学后机械抛光（CMP后）刷子提供残留的细菌抑制性质的方法。一种包括形成后化学机械抛光（后CMP）刷的方法; 并且残留地改变形成的刷的外表面的一部分的细菌抑制性质。一种包括具有残留细菌抑制性质的后化学机械抛光（CMP后）刷的装置。

6. 发明申请

US20060266736A1 Detecting particle agglomeration in chemical mechanical polishing slurries 有权
标题翻译：检测化学机械抛光浆料中的颗粒团聚
公开(公告)号：US20060266736A1
公开(公告)日：2006-11-30
申请号：US11137674
申请日：2005-05-24
申请人： Alexander Tregub , Mansour Moinpour
发明人： Alexander Tregub , Mansour Moinpour
IPC分类号： C03C15/00 , H01L21/306 , H01L21/302 , C23F1/00
CPC分类号： G01N11/142 , C09G1/02 , G01N2015/0092
摘要： A method for detecting particle agglomeration in CMP slurries. In accordance with an implementation of the invention, a CMP slurry is tested for abrasive particle agglomeration by applying an ultra high shearing force to the slurry and analyzing its rheological behavior. Through the comparison of slurry rheological behavior, implementations of the invention make it possible to detect particle agglomeration in a slurry and to distinguish between fresh and aged slurries.
摘要翻译：一种用于检测CMP浆料中颗粒聚集的方法。根据本发明的实施方案，通过对浆料施加超高剪切力并分析其流变行为，测试CMP浆料用于研磨颗粒团聚。通过浆料流变行为的比较，本发明的实施使得可以检测浆料中的颗粒聚集并区分新鲜和老化的浆料。

7. 发明授权

US07470450B2 Forming a silicon nitride film 有权
标题翻译：形成氮化硅膜
公开(公告)号：US07470450B2
公开(公告)日：2008-12-30
申请号：US10764193
申请日：2004-01-23
申请人： Michael L. McSwiney , Mansour Moinpour , Michael D. Goodner
发明人： Michael L. McSwiney , Mansour Moinpour , Michael D. Goodner
IPC分类号： C23C16/00
CPC分类号： C07F7/025 , C23C16/345 , H01L21/0217 , H01L21/02219 , H01L21/02222 , H01L21/02271 , H01L21/02274
摘要： A silicon nitride film may be deposited on a work piece using conventional deposition techniques and a selected source for use as a silicon precursor. A nitrogen precursor may also be selected for film deposition. Using the selected precursor(s), the temperature for deposition may be 500° C., or less.
摘要翻译：氮化硅膜可以使用常规沉积技术和所选择的源用作硅前体而沉积在工件上。也可以选择氮前体用于膜沉积。使用所选择的前体，沉积温度可以为500℃以下。

8. 发明授权

US07125321B2 Multi-platen multi-slurry chemical mechanical polishing process 失效
标题翻译：多板多浆化学机械抛光工艺
公开(公告)号：US07125321B2
公开(公告)日：2006-10-24
申请号：US11014889
申请日：2004-12-17
申请人： Matthew J Prince , Mansour Moinpour , Francis M Tambwe , Gary Ding
发明人： Matthew J Prince , Mansour Moinpour , Francis M Tambwe , Gary Ding
IPC分类号： B24B1/00
CPC分类号： H01L21/31053 , B24B27/0076 , B24B37/042
摘要： A multi-platen, multi-slurry chemical mechanical polishing method comprises providing a substrate having a surface that includes at least one nitride structure and an oxide layer atop the nitride structure, performing a first CMP process on the substrate using a first platen with a silica based slurry to remove a bulk portion of the oxide layer without exposing the nitride structure, performing a second CMP process on the substrate using a second platen with a ceria based slurry to remove a residual portion of the oxide layer and to expose at least a portion of the nitride structure, and performing a third CMP process on the substrate using the first platen with a silica based slurry to remove at least one defect caused by the ceria based slurry.
摘要翻译：多压板多浆化学机械抛光方法包括提供具有包括至少一个氮化物结构和氮化物结构顶部的氧化物层的表面的衬底，使用具有二氧化硅的第一压板在衬底上进行第一CMP工艺在不暴露氮化物结构的情况下去除氧化物层的主体部分，使用具有二氧化铈基浆料的第二压板在衬底上执行第二CMP工艺以除去氧化物层的残余部分并暴露至少一部分的氮化物结构，并且使用具有二氧化硅基浆料的第一压板在衬底上进行第三CMP处理以除去由二氧化铈基浆料引起的至少一个缺陷。

9. 发明授权

US06365521B1 Passivation for tight metal geometry 失效
标题翻译：钝金属几何形状
公开(公告)号：US06365521B1
公开(公告)日：2002-04-02
申请号：US09001265
申请日：1997-12-31
申请人： Jan V. Shubert , Glen Wada , Mansour Moinpour , Yang-Chin Shih , Ken Schatz
发明人： Jan V. Shubert , Glen Wada , Mansour Moinpour , Yang-Chin Shih , Ken Schatz
IPC分类号： H01L21302
CPC分类号： H01L23/3192 , H01L23/3171 , H01L2924/0002 , H01L2924/00
摘要： A method of passivating an integrated circuit comprising providing an integrated circuit having a top side including a bond pad, depositing a first dielectric over said top side of said integrated circuit, exposing a first area portion of a top side of said bond pad, depositing a second dielectric of one of a material that is substantially impermeable to moisture over said top side of said integrated circuit, and exposing a second area portion of said top side of said bond pad, said second area portion within said first area portion is disclosed.
摘要翻译：一种钝化集成电路的方法，包括提供具有包括接合焊盘的顶侧的集成电路，在所述集成电路的所述顶侧上沉积第一电介质，暴露所述接合焊盘的顶侧的第一区域部分，在所述集成电路的所述顶侧基本上不透水的材料之一的第二电介质，以及暴露所述接合焊盘的所述顶侧的第二区域部分，所述第二区域部分在所述第一区域部分内。

10. 发明申请

US20090253270A1 DEPOSITION METHOD FOR HIGH-K DIELECTRIC MATERIALS 失效
标题翻译：高K介电材料沉积方法
公开(公告)号：US20090253270A1
公开(公告)日：2009-10-08
申请号：US12061584
申请日：2008-04-02
申请人： Adrien R. Lavoie , John J. Plombon , Juan E. Dominguez , Harsono S. Simka , Mansour Moinpour
发明人： Adrien R. Lavoie , John J. Plombon , Juan E. Dominguez , Harsono S. Simka , Mansour Moinpour
IPC分类号： H01L21/316 , C23C18/44
CPC分类号： H01L21/316 , C23C18/1216 , C23C18/1225 , C23C18/1245
摘要： A method for depositing a high-k dielectric material on a semiconductor substrate is disclosed. The method includes applying a chemical bath to a surface of a substrate, rinsing the surface, applying a co-reactant bath to the surface of the substrate, and rinsing the surface. The chemical bath includes a metal precursor which includes at least a hafnium compound, an aluminium compound, a titanium compound, zirconium compound, a scandium compound, a yttrium compound or a lanthanide compound.
摘要翻译：公开了一种在半导体衬底上沉积高k电介质材料的方法。该方法包括将化学浴施加到基底表面上，冲洗表面，向基底表面施加共反应物浴，并漂洗该表面。化学浴包括至少包含铪化合物，铝化合物，钛化合物，锆化合物，钪化合物，钇化合物或镧系元素化合物的金属前体。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式