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1. 发明授权

US6165864A Tapered electrode for stacked capacitors 失效
标题翻译：用于堆叠电容器的锥形电极
公开(公告)号：US6165864A
公开(公告)日：2000-12-26
申请号：US123298
申请日：1998-07-28
申请人： Hua Shen , Joachim Nuetzel , Carl J. Radens , David Kotecki
发明人： Hua Shen , Joachim Nuetzel , Carl J. Radens , David Kotecki
IPC分类号： H01G4/12 , H01L21/02 , H01L21/8242 , H01L27/10 , H01L27/108 , H01L21/20
CPC分类号： H01L27/10852 , H01L28/82
摘要： A method for forming a stacked capacitor includes the steps of providing a first insulating layer having a conductive access path therethrough, forming a second insulating layer on the first insulating layer, forming a trench in the second insulating layer, the trench having tapered sidewalls, forming a first electrode in the trench and on the trench sidewalls, the first electrode being electrically coupled to the conductive access path, forming a dielectric layer on the first electrode and forming a second electrode on the dielectric layer. A stacked capacitor having increased surface area includes a first electrode formed in a trench provided in a dielectric material. The first electrode has tapered surfaces forming a conically shaped portion of the first electrode, the first electrode for accessing a capacitively coupled storage node.
摘要翻译：一种叠层电容器的形成方法包括以下步骤：提供具有导电通路的第一绝缘层，在第一绝缘层上形成第二绝缘层，在第二绝缘层中形成沟槽，沟槽具有锥形侧壁，形成所述沟槽中的第一电极和所述沟槽侧壁上的第一电极，所述第一电极电耦合到所述导电接入路径，在所述第一电极上形成电介质层，并在所述电介质层上形成第二电极。具有增加的表面积的堆叠电容器包括形成在设置在电介质材料中的沟槽中的第一电极。第一电极具有形成第一电极的锥形部分的锥形表面，用于访问电容耦合存储节点的第一电极。

2. 发明授权

US08802990B2 Self-aligned nano-scale device with parallel plate electrodes 有权
标题翻译：具有平行平板电极的自对准纳米级装置
公开(公告)号：US08802990B2
公开(公告)日：2014-08-12
申请号：US13432037
申请日：2012-03-28
申请人： Lawrence A. Clevenger , Zhengwen Li , Kevin S. Petrarca , Roger A. Quon , Carl J. Radens , Brian C. Sapp
发明人： Lawrence A. Clevenger , Zhengwen Li , Kevin S. Petrarca , Roger A. Quon , Carl J. Radens , Brian C. Sapp
IPC分类号： H01B5/14 , H01L21/76 , H01L21/764
CPC分类号： B81C1/00698 , B81B2201/0292
摘要： A contiguous deep trench includes a first trench portion having a constant width between a pair of first parallel sidewalls, second and third trench portions each having a greater width than the first trench portion and laterally connected to the first trench portion. A non-conformal deposition process is employed to form a conductive layer that has a tapered geometry within the contiguous deep trench portion such that the conductive layer is not present on bottom surfaces of the contiguous deep trench. A gap fill layer is formed to plug the space in the first trench portion. The conductive layer is patterned into two conductive plates each having a tapered vertical portion within the first trench portion. After removing remaining portions of the gap fill layer, a device is formed that has a small separation distance between the tapered vertical portions of the conductive plates.
摘要翻译：连续的深沟槽包括在一对第一平行侧壁之间具有恒定宽度的第一沟槽部分，第二沟槽部分和第三沟槽部分各自具有比第一沟槽部分更大的宽度并横向连接到第一沟槽部分。使用非共形沉积工艺来形成导电层，该导电层在邻接的深沟槽部分内具有锥形几何形状，使得导电层不存在于邻接的深沟槽的底表面上。形成间隙填充层以堵塞第一沟槽部分中的空间。将导电层图案化为在第一沟槽部分内具有锥形垂直部分的两个导电板。在去除间隙填充层的剩余部分之后，形成在导电板的锥形垂直部分之间具有小间隔距离的装置。

3. 发明授权

US08692649B2 Asset management infrastructure 有权
标题翻译：资产管理基础设施
公开(公告)号：US08692649B2
公开(公告)日：2014-04-08
申请号：US13296242
申请日：2011-11-15
申请人： Lawrence A. Clevenger , Rainer K. Krause , Kevin S. Petrarca , Carl J. Radens , Brian C. Sapp
发明人： Lawrence A. Clevenger , Rainer K. Krause , Kevin S. Petrarca , Carl J. Radens , Brian C. Sapp
IPC分类号： H04Q9/00
CPC分类号： G08B13/14 , G06Q10/087
摘要： Asset management for control of electric appliances comprises a keycode unit and an equipment unit embedded in an appliance. The keycode unit is located in a protected environment and relates to an asset management area. The equipment unit may store an appliance identification code. The keycode unit and the equipment unit may be in communication contact, whereby the equipment unit sends positioning coordinates to the keycode unit, and wherein the equipment unit is adapted to lock the appliance via the lock unit, in response to a lock signal that the equipment unit receives from the keycode unit, if the appliance moves outside the asset management area.
摘要翻译：用于控制电器的资产管理包括密码单元和嵌入在器具中的设备单元。键码单元位于受保护的环境中，与资产管理区域有关。设备单元可以存储设备标识码。键码单元和设备单元可以是通信接触的，由此设备单元向键码单元发送定位坐标，并且其中设备单元适于经由锁定单元锁定设备，响应于锁定信号，设备如果设备移动到资产管理区域外，则单元从密钥单元接收。

4. 发明申请

US20130168395A1 SELF-LOCKING CONTAINER 有权
标题翻译：自锁式容器
公开(公告)号：US20130168395A1
公开(公告)日：2013-07-04
申请号：US13340776
申请日：2011-12-30
申请人： Ira L. Allen , Lawrence A. Clevenger , Kevin S. Petrarca , Carl J. Radens
发明人： Ira L. Allen , Lawrence A. Clevenger , Kevin S. Petrarca , Carl J. Radens
IPC分类号： B65D55/02 , B65D41/04
CPC分类号： B65D79/02 , A61J1/03 , A61J2200/72 , B65D41/04 , B65D55/10 , B65D2213/00
摘要： Method and apparatus to provide a self-locking container to prevent unwanted access to materials stored in the container as a result of exposure to conditions that compromise the effectiveness or safety of the materials. A container may be threaded to receive a threaded lid, and the container may comprise a bolt movable within a channel from a retracted position, which allows the lid to be threadably connected or removed, to a locked position, which prevents removal of the lid. The bolt is movable to the locked position by a drive member, such as a bimetallic strip or a shape-memory element that drive the bolt in response to exposure to the condition that compromises the material.
摘要翻译：提供自锁容器的方法和装置，以防止由于暴露于损害材料的有效性或安全性的条件而导致存储在容器中的材料的不期望的访问。容器可以是螺纹以接收带螺纹的盖子，并且容器可以包括螺栓，该螺栓可在通道内从缩回位置移动，该缩回位置允许盖子被螺纹连接或移除到锁定位置，从而防止盖子移除。螺栓通过驱动构件（例如双金属条或形状记忆元件）可移动到锁定位置，该双金属条或形状记忆元件响应于暴露于损害材料的状况而驱动螺栓。

5. 发明申请

US20120189767A1 SELF-ALIGNED NANO-SCALE DEVICE WITH PARALLEL PLATE ELECTRODES 有权
标题翻译：具有平行平板电极的自对准纳米尺度装置
公开(公告)号：US20120189767A1
公开(公告)日：2012-07-26
申请号：US13432037
申请日：2012-03-28
申请人： Lawrence A. Clevenger , Zhengwen Li , Kevin S. Petrarca , Roger A. Quon , Carl J. Radens , Brian C. Sapp
发明人： Lawrence A. Clevenger , Zhengwen Li , Kevin S. Petrarca , Roger A. Quon , Carl J. Radens , Brian C. Sapp
IPC分类号： B05D5/12 , B05D3/00
CPC分类号： B81C1/00698 , B81B2201/0292
摘要： A contiguous deep trench includes a first trench portion having a constant width between a pair of first parallel sidewalls, second and third trench portions each having a greater width than the first trench portion and laterally connected to the first trench portion. A non-conformal deposition process is employed to form a conductive layer that has a tapered geometry within the contiguous deep trench portion such that the conductive layer is not present on bottom surfaces of the contiguous deep trench. A gap fill layer is formed to plug the space in the first trench portion. The conductive layer is patterned into two conductive plates each having a tapered vertical portion within the first trench portion. After removing remaining portions of the gap fill layer, a device is formed that has a small separation distance between the tapered vertical portions of the conductive plates.
摘要翻译：连续的深沟槽包括在一对第一平行侧壁之间具有恒定宽度的第一沟槽部分，第二沟槽部分和第三沟槽部分各自具有比第一沟槽部分更大的宽度并横向连接到第一沟槽部分。使用非共形沉积工艺来形成导电层，该导电层在邻接的深沟槽部分内具有锥形几何形状，使得导电层不存在于邻接的深沟槽的底表面上。形成间隙填充层以堵塞第一沟槽部分中的空间。将导电层图案化为在第一沟槽部分内具有锥形垂直部分的两个导电板。在去除间隙填充层的剩余部分之后，形成在导电板的锥形垂直部分之间具有小间隔距离的装置。

6. 发明申请

US20120132966A1 SEMICONDUCTOR STRUCTURES HAVING IMPROVED CONTACT RESISTANCE 有权
标题翻译：具有改善接触电阻的半导体结构
公开(公告)号：US20120132966A1
公开(公告)日：2012-05-31
申请号：US11872291
申请日：2007-10-15
申请人： Bruce B. Doris , Carl J. Radens , Anthony K. Stamper , Jay W. Strane
发明人： Bruce B. Doris , Carl J. Radens , Anthony K. Stamper , Jay W. Strane
IPC分类号： H01L29/78 , H01L21/768 , H01L23/52
CPC分类号： H01L21/28518 , B81B2207/07 , B81C1/00095 , B81C2201/0149 , H01L21/3086 , H01L21/76886 , H01L23/485 , H01L23/5226 , H01L29/41766 , H01L29/665 , H01L29/66636 , H01L2924/0002 , H01L2924/00
摘要： Self-assembled polymer technology is used to form at least one ordered nanosized pattern within material that is present in a conductive contact region of a semiconductor structure. The material having the ordered, nanosized pattern is a conductive material of an interconnect structure or semiconductor source and drain diffusion regions of a field effect transistor. The presence of the ordered, nanosized pattern material within the contact region increases the overall area (i.e., interface area) for subsequent contact formation which, in turn, reduces the contact resistance of the structure. The reduction in contact resistance in turn improves the flow of current through the structure. In addition to the above, the inventive methods and structures do not affect the junction capacitance of the structure since the junction area remains unchanged.
摘要翻译：自组装聚合物技术用于在存在于半导体结构的导电接触区域中的材料内形成至少一个有序的纳米尺度图案。具有有序纳米尺寸图案的材料是场效应晶体管的互连结构或半导体源和漏极扩散区的导电材料。在接触区域内有序的纳米尺寸图案材料的存在增加了用于随后的接触形成的总面积（即界面面积），这又降低了结构的接触电阻。接触电阻的降低又改善了通过结构的电流的流动。除了上述之外，本发明的方法和结构不影响结构的结电容，因为结面积保持不变。

7. 发明申请

US20100319962A1 SELF-ALIGNED NANO-SCALE DEVICE WITH PARALLEL PLATE ELECTRODES 失效
标题翻译：具有平行平板电极的自对准纳米尺度装置
公开(公告)号：US20100319962A1
公开(公告)日：2010-12-23
申请号：US12488948
申请日：2009-06-22
申请人： Lawrence A. Clevenger , Zhengwen Li , Kevin S. Petrarca , Roger A. Quon , Carl J. Radens , Brian C. Sapp
发明人： Lawrence A. Clevenger , Zhengwen Li , Kevin S. Petrarca , Roger A. Quon , Carl J. Radens , Brian C. Sapp
IPC分类号： H01B5/14 , B05D5/12
CPC分类号： B81C1/00698 , B81B2201/0292
摘要： A contiguous deep trench includes a first trench portion having a constant width between a pair of first parallel sidewalls, second and third trench portions each having a greater width than the first trench portion and laterally connected to the first trench portion. A non-conformal deposition process is employed to form a conductive layer that has a tapered geometry within the contiguous deep trench portion such that the conductive layer is not present on bottom surfaces of the contiguous deep trench. A gap fill layer is formed to plug the space in the first trench portion. The conductive layer is patterned into two conductive plates each having a tapered vertical portion within the first trench portion. After removing remaining portions of the gap fill layer, a device is formed that has a small separation distance between the tapered vertical portions of the conductive plates.
摘要翻译：连续的深沟槽包括在一对第一平行侧壁之间具有恒定宽度的第一沟槽部分，第二沟槽部分和第三沟槽部分各自具有比第一沟槽部分更大的宽度并横向连接到第一沟槽部分。使用非共形沉积工艺来形成导电层，该导电层在邻接的深沟槽部分内具有锥形几何形状，使得导电层不存在于邻接的深沟槽的底表面上。形成间隙填充层以堵塞第一沟槽部分中的空间。将导电层图案化为在第一沟槽部分内具有锥形垂直部分的两个导电板。在去除间隙填充层的剩余部分之后，形成在导电板的锥形垂直部分之间具有小间隔距离的装置。

8. 发明授权

US07759188B2 Method of fabricating vertical body-contacted SOI transistor 失效
标题翻译：垂直体接触SOI晶体管的制造方法
公开(公告)号：US07759188B2
公开(公告)日：2010-07-20
申请号：US12002828
申请日：2007-12-19
申请人： Kangguo Cheng , Gary B. Bronner , Ramachandra Divakaruni , Carl J. Radens
发明人： Kangguo Cheng , Gary B. Bronner , Ramachandra Divakaruni , Carl J. Radens
IPC分类号： H01L21/8242
CPC分类号： H01L27/1203 , H01L21/84 , H01L29/66666 , H01L29/78642
摘要： A method of fabricating a vertical field effect transistor (“FET”) is provided which includes a transistor body region and source and drain regions disposed in a single-crystal semiconductor-on-insulator (“SOI”) region of a substrate adjacent a sidewall of a trench. The substrate includes a buried insulator layer underlying the SOI region and a bulk region underlying the buried insulator layer. A buried strap conductively connects the SOI region to a lower node disposed below the SOI region and a body contact extends from the transistor body region to the bulk region of the substrate, the body contact being insulated from the buried strap.
摘要翻译：提供一种制造垂直场效应晶体管（“FET”）的方法，其包括晶体管本体区域和设置在邻近侧壁的衬底的单晶半导体绝缘体（“SOI”）区域中的源极和漏极区域的沟渠衬底包括在SOI区域下面的掩埋绝缘体层和埋在掩埋绝缘体层下面的主体区域。掩埋带导电地将SOI区域连接到设置在SOI区域下方的下部节点，并且主体接触从晶体管本体区域延伸到衬底的主体区域，身体接触部与掩埋带绝缘。

9. 发明授权

US07737482B2 Self-aligned strap for embedded trench memory on hybrid orientation substrate 失效
标题翻译：用于混合取向基板上嵌入式沟槽存储器的自对准带
公开(公告)号：US07737482B2
公开(公告)日：2010-06-15
申请号：US11538982
申请日：2006-10-05
申请人： Kangguo Cheng , Ramachandra Divakaruni , Carl J. Radens
发明人： Kangguo Cheng , Ramachandra Divakaruni , Carl J. Radens
IPC分类号： H01L29/76
CPC分类号： H01L27/1203 , H01L21/743 , H01L21/84 , H01L27/10829 , H01L27/10867 , H01L27/1087 , H01L27/1207 , H01L29/78
摘要： Structures including a self-aligned strap for embedded trench memory (e.g., trench capacitor) on hybrid orientation technology (HOT) substrate, and related method, are disclosed. One structure includes a hybrid orientation substrate including a semiconductor-on-insulator (SOI) section and a bulk semiconductor section; a transistor over the SOI section; a trench capacitor in the bulk semiconductor section; and a self-aligned strap extending from a source/drain region of the transistor to an electrode of the trench capacitor. The method does not require additional masks to generate the strap, results in a self-aligned strap and improved device performance. In one embodiment, the strap is a silicide strap.
摘要翻译：公开了包括用于混合取向技术（HOT）衬底上的嵌入式沟槽存储器（例如，沟槽电容器）的自对准带的结构以及相关方法。一种结构包括：包含绝缘体上半导体（SOI）部分和体半导体部分的混合取向衬底; SOI部分上的晶体管; 体半导体部分中的沟槽电容器; 以及从晶体管的源极/漏极区域延伸到沟槽电容器的电极的自对准带。该方法不需要额外的掩模来生成带，导致自对准带和改进的设备性能。在一个实施例中，带是硅化物带。

10. 发明授权

US07732288B2 Method for fabricating a semiconductor structure 有权
标题翻译：半导体结构的制造方法
公开(公告)号：US07732288B2
公开(公告)日：2010-06-08
申请号：US12367764
申请日：2009-02-09
申请人： Huilong Zhu , Lawrence A. Clevenger , Omer H. Dokumaci , Oleg Gluschenkov , Kaushik A. Kumar , Carl J. Radens , Dureseti Chidambarrao
发明人： Huilong Zhu , Lawrence A. Clevenger , Omer H. Dokumaci , Oleg Gluschenkov , Kaushik A. Kumar , Carl J. Radens , Dureseti Chidambarrao
IPC分类号： H01L29/76 , H01L31/062
CPC分类号： H01L29/0843 , H01L21/26506 , H01L21/26586 , H01L29/6653 , H01L29/66628 , H01L29/66636 , H01L29/7834
摘要： A method for fabricating a semiconductor structure. The novel transistor structure comprises first and second source/drain (S/D) regions whose top surfaces are lower than a top surface of the channel region of the transistor structure. A semiconductor layer and a gate stack on the semiconductor layer are provided. The semiconductor layer includes (i) a channel region directly beneath the gate stack, and (ii) first and second semiconductor regions essentially not covered by the gate stack, and wherein the channel region is disposed between the first and second semiconductor regions. The first and second semiconductor regions are removed. Regions directly beneath the removed first and second semiconductor regions are removed so as to form first and second source/drain regions, respectively, such that top surfaces of the first and second source/drain regions are below a top surface of the channel region.
摘要翻译：一种半导体结构的制造方法。新颖的晶体管结构包括顶表面低于晶体管结构的沟道区的顶表面的第一和第二源极/漏极（S / D）区域。提供半导体层上的半导体层和栅极堆叠。半导体层包括（i）栅极叠层正下方的沟道区，以及（ii）基本上不被栅极叠层覆盖的第一和第二半导体区，并且其中沟道区设置在第一和第二半导体区之间。去除第一和第二半导体区域。除去去除的第一和第二半导体区域正下方的区域，以便分别形成第一和第二源极/漏极区域，使得第一和第二源极/漏极区域的顶表面在通道区域的顶表面之下。

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