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1. 发明授权

US08466070B2 Methods of forming semiconductor structures 有权
标题翻译：形成半导体结构的方法
公开(公告)号：US08466070B2
公开(公告)日：2013-06-18
申请号：US13151806
申请日：2011-06-02
申请人： Hsing-Fei Chou , Chia-Hua Chu , Jieh-Jang Chen , Feng-Jia Shiu , Hung Chang Hsieh
发明人： Hsing-Fei Chou , Chia-Hua Chu , Jieh-Jang Chen , Feng-Jia Shiu , Hung Chang Hsieh
IPC分类号： H01L21/311
CPC分类号： B81C1/00063
摘要： A method of forming a semiconductor structure includes forming an opening in a substrate. A dielectric layer is formed and substantially conformal to the opening. A sacrificial structure is formed within the opening, covering a portion of the dielectric layer. A portion of the dielectric layer is removed by using the sacrificial structure as an etch mask layer. The sacrificial structure is removed.
摘要翻译：形成半导体结构的方法包括在衬底中形成开口。形成介电层并基本上与开口保持一致。在开口内形成牺牲结构，覆盖电介质层的一部分。通过使用牺牲结构作为蚀刻掩模层来去除介电层的一部分。牺牲结构被去除。

2. 发明授权

US08409456B2 Planarization method for high wafer topography 有权
标题翻译：高晶圆地形平面化方法
公开(公告)号：US08409456B2
公开(公告)日：2013-04-02
申请号：US13090763
申请日：2011-04-20
申请人： Shun-Wei Lan , Jieh-Jang Chen , Shih-Wei Lin , Feng-Jia Shiu , Hung Chang Hsieh
发明人： Shun-Wei Lan , Jieh-Jang Chen , Shih-Wei Lin , Feng-Jia Shiu , Hung Chang Hsieh
IPC分类号： B44C1/22
CPC分类号： H01L21/31058 , H01L21/31138
摘要： A method for planarizing a semiconductor device includes providing a substrate having at least one opening therein, each opening defining a lower portion and an upper portion; coating a light sensitive material layer over the substrate, the light sensitive material layer covering the lower and upper portions of the at least one opening; etching back the light sensitive material layer to expose the upper portion of the at least one opening; repeating the steps of coating and etching to remove a predetermined amount below the upper portion of the at least one opening; depositing an insulating layer over the substrate; and planarizing the insulating layer until the upper portion of the at least one opening is exposed.
摘要翻译：一种用于平面化半导体器件的方法包括提供其中具有至少一个开口的衬底，每个开口限定下部和上部; 在所述基板上涂覆感光材料层，所述光敏材料层覆盖所述至少一个开口的下部和上部; 蚀刻光敏材料层以暴露至少一个开口的上部; 重复涂覆和蚀刻步骤以除去至少一个开口的上部下方的预定量; 在衬底上沉积绝缘层; 并且平坦化绝缘层，直到暴露至少一个开口的上部。

3. 发明授权

US08623229B2 Manufacturing techniques to limit damage on workpiece with varying topographies 有权
标题翻译：制造技术来限制对具有不同形貌的工件的损伤
公开(公告)号：US08623229B2
公开(公告)日：2014-01-07
申请号：US13306299
申请日：2011-11-29
申请人： Chun-Chang Chen , Shih-Chi Fu , Wang-Pen Mo , Hung Chang Hsieh
发明人： Chun-Chang Chen , Shih-Chi Fu , Wang-Pen Mo , Hung Chang Hsieh
IPC分类号： B44C1/22
CPC分类号： H01L21/32139 , H01L21/0271 , H01L27/11541 , H01L29/66795
摘要： Some embodiments relate to a method for processing a workpiece. In the method, a first photoresist layer is provided over the workpiece, wherein the first photoresist layer has a first photoresist tone. The first photoresist layer is patterned to provide a first opening exposing a first portion of the workpiece. A second photoresist layer is then provided over the patterned first photoresist layer, wherein the second photoresist layer has a second photoresist tone opposite the first photoresist tone. The second photoresist layer is then patterned to provide a second opening that at least partially overlaps the first opening to define a coincidentally exposed workpiece region. A treatment is then performed on the coincidentally exposed workpiece region. Other embodiments are also disclosed.
摘要翻译：一些实施例涉及用于处理工件的方法。在该方法中，在工件上设置第一光致抗蚀剂层，其中第一光致抗蚀剂层具有第一光致抗蚀剂色调。图案化第一光致抗蚀剂层以提供暴露工件的第一部分的第一开口。然后在图案化的第一光致抗蚀剂层上提供第二光致抗蚀剂层，其中第二光致抗蚀剂层具有与第一光致抗蚀剂色调相反的第二光致抗蚀剂色调。然后对第二光致抗蚀剂层进行图案化以提供与第一开口至少部分重叠的第二开口，以限定重合的工件区域。然后对同时暴露的工件区域进行处理。还公开了其他实施例。

4. 发明授权

US07759136B2 Critical dimension (CD) control by spectrum metrology 失效
标题翻译：光谱计量学的关键维度（CD）控制
公开(公告)号：US07759136B2
公开(公告)日：2010-07-20
申请号：US11530164
申请日：2006-09-08
申请人： Chang-Cheng Hung , Hung Chang Hsieh , Shih-Ming Chang , Wen-Chuan Wang , Chi-Lun Lu , Allen Hsia , Yen-Bin Huang
发明人： Chang-Cheng Hung , Hung Chang Hsieh , Shih-Ming Chang , Wen-Chuan Wang , Chi-Lun Lu , Allen Hsia , Yen-Bin Huang
IPC分类号： G01R31/26 , H01L21/66
CPC分类号： H01L22/26 , H01L22/12
摘要： A method for patterning a substrate includes forming a material layer on the substrate; performing a first etching on the material layer to form a pattern; measuring the pattern of the material layer using an optical spectrum metrology tool; determining whether the measuring indicates that the etching step achieved a predefined result; and producing an etching recipe and performing a second etching of the material layer using the etching recipe if the predefined result was not achieved.
摘要翻译：用于图案化衬底的方法包括在衬底上形成材料层; 在所述材料层上进行第一蚀刻以形成图案; 使用光谱计量工具测量材料层的图案; 确定测量是否指示蚀刻步骤达到预定结果; 并且如果未实现预定结果，则使用蚀刻配方产生蚀刻配方并执行材料层的第二蚀刻。

5. 发明申请

US20080156346A1 METHOD AND APPARATUS FOR CLEANING A SUBSTRATE 审中-公开
标题翻译：清洗基板的方法和装置
公开(公告)号：US20080156346A1
公开(公告)日：2008-07-03
申请号：US11616964
申请日：2006-12-28
申请人： Hsien-Cheng Wang , Hung Chang Hsieh , Tsiao-Chen Wu , Jian-Hong Chen
发明人： Hsien-Cheng Wang , Hung Chang Hsieh , Tsiao-Chen Wu , Jian-Hong Chen
IPC分类号： B08B3/08 , B08B1/04 , B08B11/02
CPC分类号： H01L21/67046 , G03F7/168 , G03F7/70341 , G03F7/70925 , H01L21/67028
摘要： A method for photolithography processing includes forming a photoresist layer on a surface of a substrate, baking the substrate to remove solvents from the photoresist layer, cleaning an edge of the substrate with a tape, and exposing the photoresist layer with radiation energy. The tape includes a cleaning material. The tape is positioned proximate to or in contact with the edge of the substrate while the substrate is rotating.
摘要翻译：一种用于光刻处理的方法包括在基板的表面上形成光致抗蚀剂层，烘烤基板以从光致抗蚀剂层去除溶剂，用带清洁基板的边缘，以及用辐射能曝光光致抗蚀剂层。胶带包括清洁材料。当衬底旋转时，带被定位成与衬底的边缘接近或接触。

6. 发明申请

US20130137266A1 MANUFACTURING TECHNIQUES TO LIMIT DAMAGE ON WORKPIECE WITH VARYING TOPOGRAPHIES 有权
标题翻译：制造技术限制工件损坏与变化的地形
公开(公告)号：US20130137266A1
公开(公告)日：2013-05-30
申请号：US13306299
申请日：2011-11-29
申请人： Chun-Chang Chen , Shih-Chi Fu , Wang-Pen Mo , Hung Chang Hsieh
发明人： Chun-Chang Chen , Shih-Chi Fu , Wang-Pen Mo , Hung Chang Hsieh
IPC分类号： H01L21/311
CPC分类号： H01L21/32139 , H01L21/0271 , H01L27/11541 , H01L29/66795
摘要： Some embodiments relate to a method for processing a workpiece. In the method, a first photoresist layer is provided over the workpiece, wherein the first photoresist layer has a first photoresist tone. The first photoresist layer is patterned to provide a first opening exposing a first portion of the workpiece. A second photoresist layer is then provided over the patterned first photoresist layer, wherein the second photoresist layer has a second photoresist tone opposite the first photoresist tone. The second photoresist layer is then patterned to provide a second opening that at least partially overlaps the first opening to define a coincidentally exposed workpiece region. A treatment is then performed on the coincidentally exposed workpiece region. Other embodiments are also disclosed.
摘要翻译：一些实施例涉及用于处理工件的方法。在该方法中，在工件上设置第一光致抗蚀剂层，其中第一光致抗蚀剂层具有第一光致抗蚀剂色调。图案化第一光致抗蚀剂层以提供暴露工件的第一部分的第一开口。然后在图案化的第一光刻胶层上提供第二光致抗蚀剂层，其中第二光致抗蚀剂层具有与第一光致抗蚀剂色调相反的第二光致抗蚀剂色调。然后对第二光致抗蚀剂层进行图案化以提供与第一开口至少部分重叠的第二开口，以限定重合的工件区域。然后对同时暴露的工件区域进行处理。还公开了其他实施例。

7. 发明授权

US08236579B2 Methods and systems for lithography alignment 有权
标题翻译：光刻对准的方法和系统
公开(公告)号：US08236579B2
公开(公告)日：2012-08-07
申请号：US11686142
申请日：2007-03-14
申请人： Hsiao-Tzu Lu , Hung Chang Hsieh , Kuei Shun Chen , Hsueh-Hung Fu , Ching-Hua Hsieh , Shau-Lin Shue
发明人： Hsiao-Tzu Lu , Hung Chang Hsieh , Kuei Shun Chen , Hsueh-Hung Fu , Ching-Hua Hsieh , Shau-Lin Shue
IPC分类号： H01L21/00
CPC分类号： G03F7/70725 , G03F7/70358 , G03F7/70783 , H01L21/67288
摘要： Methods and systems for lithographically exposing a substrate based on a curvature profile of the substrate.
摘要翻译：基于基板的曲率轮廓光刻曝光基板的方法和系统。

8. 发明授权

US07999910B2 System and method for manufacturing a mask for semiconductor processing 有权
标题翻译：用于制造半导体处理用掩模的系统和方法
公开(公告)号：US07999910B2
公开(公告)日：2011-08-16
申请号：US11115433
申请日：2005-04-27
申请人： Chia-Jen Chen , Hsin-Chang Lee , Sheng-Chi Chin , Hung Chang Hsieh , Burn Jeng Lin
发明人： Chia-Jen Chen , Hsin-Chang Lee , Sheng-Chi Chin , Hung Chang Hsieh , Burn Jeng Lin
IPC分类号： G03B27/32 , G03B27/58 , G03D5/00
CPC分类号： G03F7/38
摘要： The present disclosure provides a system and method for manufacturing a mask for semiconductor processing. In one example, the system includes at least one exposure unit configured to select a recipe for a later baking process in a post treatment unit, a buffer unit coupled to the exposure unit and configured to move the mask substrate from the exposure unit to the post treatment unit without exposing the mask substrate to the environment; and the post treatment unit coupled to the buffer unit and the exposure unit and configured to perform a baking process on the mask substrate using baking parameters associated with the recipe selected by the exposure unit.
摘要翻译：本公开提供了一种用于制造用于半导体处理的掩模的系统和方法。在一个示例中，系统包括至少一个曝光单元，其被配置为在后处理单元中选择用于稍后烘焙处理的配方，缓冲单元，其耦合到曝光单元并且被配置为将掩模基板从曝光单元移动到柱处理单元，而不将掩模基板暴露于环境中; 以及所述后处理单元，其耦合到所述缓冲单元和所述曝光单元，并且被配置为使用与由所述曝光单元选择的所述配方相关联的烘焙参数对所述掩模基板进行烘烤处理。

9. 发明授权

US07697114B2 Method and apparatus for compensated illumination for advanced lithography 失效
标题翻译：用于高级光刻的补偿照明的方法和装置
公开(公告)号：US07697114B2
公开(公告)日：2010-04-13
申请号：US11424173
申请日：2006-06-14
申请人： Shih-Ming Chang , Wen-Chuan Wang , Chih-Cheng Chin , Chi-Lun Lu , Sheng-Chi Chin , Hung Chang Hsieh
发明人： Shih-Ming Chang , Wen-Chuan Wang , Chih-Cheng Chin , Chi-Lun Lu , Sheng-Chi Chin , Hung Chang Hsieh
IPC分类号： G03B27/54 , G03B27/72
CPC分类号： G03F7/701
摘要： Disclosed is a lithography system. The lithography system includes a source designed to provide energy; an imaging system configured to direct the energy onto a substrate to form a predefined image thereon, and defining an optical axis; and an aperture incorporated with the imaging system, the aperture having a plurality of transmitting regions defined along radial axis not parallel to the optical axis, and each transmitting region operable to transmit the energy with adjustable intensity.
摘要翻译：公开了一种光刻系统。光刻系统包括设计用于提供能量的源; 成像系统，被配置为将能量引导到衬底上以在其上形成预定图像，并且限定光轴; 以及与成像系统结合的孔，所述孔具有沿着不平行于光轴的径向轴线限定的多个透射区域，并且每个透射区域可操作以以可调节的强度透射能量。

10. 发明申请

US20100255679A1 LITHOGRAPHY METHOD AND APPARATUS FOR SEMICONDUCTOR DEVICE FABRICATION 有权
标题翻译：用于半导体器件制造的算法和装置
公开(公告)号：US20100255679A1
公开(公告)日：2010-10-07
申请号：US12417090
申请日：2009-04-02
申请人： Hsien-Cheng Wang , Hung Chang Hsieh , Shih-Che Wang , Ping Chieh Wu , Wen-Chun Huang , Ming-Chang Wen
发明人： Hsien-Cheng Wang , Hung Chang Hsieh , Shih-Che Wang , Ping Chieh Wu , Wen-Chun Huang , Ming-Chang Wen
IPC分类号： H01L21/461 , G03F7/20 , G03B27/54
CPC分类号： G03B27/523 , G03B27/54 , G03F7/701 , H01L21/302
摘要： Provided is a lithography system operation to include a first aperture or a second aperture. Each of the first and second apertures has two pairs of radiation-transmitting regions where one pair of radiation-transmitting regions are larger than a second pair. For an aperture, each pair of radiation-transmitting regions are on different diametrical axis. In an embodiment, one aperture is used for x-dipole illumination and the second aperture is used for y-dipole illumination.
摘要翻译：提供了包括第一孔或第二孔的光刻系统操作。第一和第二孔中的每一个具有两对辐射透射区域，其中一对辐射透射区域大于第二对。对于孔径，每对辐射透射区域在不同的直径轴线上。在一个实施例中，一个孔用于x-偶极照明，第二个孔用于y-偶极照明。

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