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1. 发明授权

US07579613B2 Thin film fuse phase change RAM and manufacturing method 有权
标题翻译：薄膜保险丝相变RAM及制造方法
公开(公告)号：US07579613B2
公开(公告)日：2009-08-25
申请号：US11959708
申请日：2007-12-19
申请人： Hsiang Lan Lung , Shih-Hung Chen
发明人： Hsiang Lan Lung , Shih-Hung Chen
IPC分类号： H01L29/02
CPC分类号： H01L45/1226 , G11C13/0004 , H01L27/2436 , H01L27/2463 , H01L45/06 , H01L45/144 , H01L45/1675 , H01L45/1691
摘要： A memory device comprising a first electrode having a top side, a second electrode having a top side and an insulating member between the first electrode and the second electrode. The insulating member has a thickness between the first and second electrodes near the top side of the first electrode and the top side of the second electrode. A bridge of memory material crosses the insulating member, and defines an inter-electrode path between the first and second electrodes across the insulating member. An array of such memory cells is provided. In the array, a plurality of electrode members and insulating members therebetween comprise an electrode layer on an integrated circuit. The bridges of memory material have sub-lithographic dimensions.
摘要翻译：一种存储器件，包括具有顶侧的第一电极，具有顶侧的第二电极和位于第一电极和第二电极之间的绝缘构件。绝缘构件在第一电极的顶侧附近和第二电极的顶侧之间具有在第一和第二电极之间的厚度。记忆材料桥跨越绝缘构件，并且在绝缘构件之间限定了第一和第二电极之间的电极间路径。提供这样的存储单元阵列。在阵列中，多个电极构件和绝缘构件包括集成电路上的电极层。记忆材料的桥梁具有亚光刻尺寸。

2. 发明授权

US07238994B2 Thin film plate phase change ram circuit and manufacturing method 有权
标题翻译：薄膜相变冲击电路及制造方法
公开(公告)号：US07238994B2
公开(公告)日：2007-07-03
申请号：US11155202
申请日：2005-06-17
申请人： Shih-Hung Chen , Hsiang Lan Lung
发明人： Shih-Hung Chen , Hsiang Lan Lung
IPC分类号： H01L29/76 , H01L29/00
CPC分类号： H01L45/06 , H01L27/2436 , H01L27/2463 , H01L45/1226 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1675 , H01L45/1691
摘要： A memory device comprising a access circuits, an electrode layer over the access circuits, an array of phase change memory bridges over the electrode layer, and a plurality of bit lines over the array of phase change memory bridges. The electrode layer includes electrode pairs. Electrode pairs include a first electrode having a top side, a second electrode having a top side and an insulating member between the first electrode and the second electrode. A bridge of memory material crosses the insulating member, and defines an inter-electrode path between the first and second electrodes across the insulating member.
摘要翻译：一种存储器件，包括存取电路，存取电路上的电极层，电极层上的相变存储器阵列，以及相变存储器桥阵列上的多个位线。电极层包括电极对。电极对包括具有顶侧的第一电极，具有顶侧的第二电极和在第一电极和第二电极之间的绝缘构件。记忆材料桥跨越绝缘构件，并且在绝缘构件之间限定了第一和第二电极之间的电极间路径。

3. 发明授权

US07635855B2 I-shaped phase change memory cell 有权
标题翻译： I形相变存储单元
公开(公告)号：US07635855B2
公开(公告)日：2009-12-22
申请号：US11348848
申请日：2006-02-07
申请人： Shih Hung Chen , Hsiang Lan Lung
发明人： Shih Hung Chen , Hsiang Lan Lung
IPC分类号： H01L47/00
CPC分类号： H01L27/2436 , G11C13/0004 , H01L45/06 , H01L45/1233 , H01L45/1246 , H01L45/144 , H01L45/148 , H01L45/1666
摘要： A memory device includes two electrodes, vertically separated and having mutually opposed contact surfaces, between which lies a phase change cell. The phase change cell includes an upper phase change member, having a contact surface in electrical contact with the first electrode; a lower phase change member, having a contact surface in electrical contact with the second electrode; and a kernel member disposed between and in electrical contact with the upper and lower phase change members. The phase change cell is formed of material having at least two solid phases, and the lateral extent of the upper and lower phase change members is substantially greater than that of the kernel member. An intermediate insulating layer is disposed between the upper and lower phase change members adjacent to the kernel member.
摘要翻译：存储器件包括垂直分离并具有相互相对的接触表面的两个电极，它们位于相变单元之间。相变单元包括上相变构件，具有与第一电极电接触的接触表面; 下部相变构件，具有与第二电极电接触的接触表面; 以及设置在上部和下部相变构件之间并与之电连接的内部构件。相变单元由具有至少两个固相的材料形成，并且上下相变构件的横向范围基本上大于内核构件的横向范围。中间绝缘层设置在与内核构件相邻的上下相变构件之间。

4. 发明授权

US07514334B2 Thin film plate phase change RAM circuit and manufacturing method 有权
标题翻译：薄膜相变RAM电路及制造方法
公开(公告)号：US07514334B2
公开(公告)日：2009-04-07
申请号：US11754559
申请日：2007-05-29
申请人： Shih Hung Chen , Hsiang Lan Lung
发明人： Shih Hung Chen , Hsiang Lan Lung
IPC分类号： H01L21/20 , H01L21/8234 , H01L21/336
CPC分类号： H01L45/06 , H01L27/2436 , H01L27/2463 , H01L45/1226 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1675 , H01L45/1691
摘要： A memory device comprising a access circuits, an electrode layer over the access circuits, an array of phase change memory bridges over the electrode layer, and a plurality of bit lines over the array of phase change memory bridges. The electrode layer includes electrode pairs. Electrode pairs include a first electrode having a top side, a second electrode having a top side and an insulating member between the first electrode and the second electrode. A bridge of memory material crosses the insulating member, and defines an inter-electrode path between the first and second electrodes across the insulating member.
摘要翻译：一种存储器件，包括存取电路，存取电路上的电极层，电极层上的相变存储器阵列，以及相变存储器桥阵列上的多个位线。电极层包括电极对。电极对包括具有顶侧的第一电极，具有顶侧的第二电极和在第一电极和第二电极之间的绝缘构件。记忆材料桥跨越绝缘构件，并且在绝缘构件之间限定了第一和第二电极之间的电极间路径。

5. 发明授权

US08237140B2 Self-aligned, embedded phase change RAM 有权
标题翻译：自对准嵌入式相变RAM
公开(公告)号：US08237140B2
公开(公告)日：2012-08-07
申请号：US11424749
申请日：2006-06-16
申请人： Hsiang Lan Lung , Shih Hung Chen
发明人： Hsiang Lan Lung , Shih Hung Chen
IPC分类号： H01L45/00
CPC分类号： H01L27/2436 , G11C13/0004 , H01L27/2463 , H01L45/06 , H01L45/1226 , H01L45/1293 , H01L45/14 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/147 , H01L45/148 , H01L45/1625 , H01L45/1641 , H01L45/1675 , H01L45/1683 , H01L45/1691
摘要： An integrated circuit with an embedded memory comprises a substrate and a plurality of conductor layers arranged for interconnecting components of the integrated circuit. An intermediate layer in the plurality of conductor layers includes a first electrode having a top surface, a second electrode having a top surface, an insulating member between the first electrode and the second electrode. A bridge overlies the intermediate layer between the first and second electrodes across the insulating member, wherein the bridge comprises a programmable resistive memory material, such as a phase change material. A conductor in at least one layer in the plurality of conductor layers over said intermediate layer is connected to said bridge.
摘要翻译：具有嵌入式存储器的集成电路包括衬底和布置用于互连集成电路的部件的多个导体层。多个导体层中的中间层包括具有顶表面的第一电极，具有顶表面的第二电极，在第一电极和第二电极之间的绝缘构件。桥跨过绝缘构件覆盖在第一和第二电极之间的中间层，其中桥包括可编程电阻存储器材料，例如相变材料。在所述中间层上的多个导体层中的至少一层中的导体连接到所述桥。

6. 发明授权

US07514288B2 Manufacturing methods for thin film fuse phase change ram 有权
标题翻译：薄膜保险丝相变柱的制造方法
公开(公告)号：US07514288B2
公开(公告)日：2009-04-07
申请号：US11155451
申请日：2005-06-17
申请人： Hsiang Lan Lung , Shih-Hung Chen
发明人： Hsiang Lan Lung , Shih-Hung Chen
IPC分类号： H01L21/06
CPC分类号： H01L45/06 , H01L27/2436 , H01L27/2463 , H01L45/1226 , H01L45/144 , H01L45/1625 , H01L45/1675
摘要： A method for manufacturing a memory device comprises forming an electrode layer on a substrate which comprises circuitry made using front-end-of-line procedures. The electrode layer includes a first electrode and a second electrode, and an insulating member between the first and second electrodes for each phase change memory cell to be formed. A bridge of memory material is formed on the top surface of the electrode layer across the insulating member for each memory cell to be formed. An access structure over the electrode layer is made by forming a patterned conductive layer over said bridge, and forming a contact between said first electrode and said patterned conductive layer.
摘要翻译：一种用于制造存储器件的方法包括在衬底上形成电极层，该电极层包括使用前端工艺制造的电路。电极层包括第一电极和第二电极，以及用于要形成的每个相变存储器单元的第一和第二电极之间的绝缘构件。在要形成的每个存储器单元的绝缘构件上，在电极层的顶表面上形成记忆材料桥。通过在所述桥上形成图案化的导电层，并在所述第一电极和所述图案化的导电层之间形成接触来形成电极层上方的访问结构。

7. 发明授权

US07450411B2 Phase change memory device and manufacturing method 有权
标题翻译：相变存储器件及其制造方法
公开(公告)号：US07450411B2
公开(公告)日：2008-11-11
申请号：US11459106
申请日：2006-07-21
申请人： Hsiang Lan Lung , Shih-Hung Chen
发明人： Hsiang Lan Lung , Shih-Hung Chen
IPC分类号： G11C11/00
CPC分类号： H01L45/144 , G11C13/0004 , G11C2213/79 , H01L27/2436 , H01L45/06 , H01L45/1226 , H01L45/1675 , H01L45/1691
摘要： A phase change memory device comprises a photolithographically formed phase change memory cell having first and second electrodes and a phase change bridge positioned between and electrically coupling the opposed sides of the electrodes to one another. The phase change bridge has a length, a width and a thickness. The width, the thickness and the length are less than a minimum photolithographic feature size of the process used to form the phase change memory cell. The size of the photoresist masks used in forming the memory cell may be reduced so that the width and the length of the phase change bridge are each less than the minimum photolithographic feature size.
摘要翻译：相变存储器件包括具有第一和第二电极的光刻形成的相变存储器单元和位于电极的相对侧之间并将电极彼此电耦合的相变桥。相变桥具有长度，宽度和厚度。宽度，厚度和长度小于用于形成相变存储单元的工艺的最小光刻特征尺寸。可以减小用于形成存储单元的光致抗蚀剂掩模的尺寸，使得相变桥的宽度和长度均小于最小光刻特征尺寸。

8. 发明申请

US20080105862A1 THIN FILM FUSE PHASE CHANGE RAM AND MANUFACTURING METHOD 有权
标题翻译：薄膜保险丝相变RAM和制造方法
公开(公告)号：US20080105862A1
公开(公告)日：2008-05-08
申请号：US11959708
申请日：2007-12-19
申请人： Hsiang Lan Lung , Shih-Hung Chen
发明人： Hsiang Lan Lung , Shih-Hung Chen
IPC分类号： H01L45/00
CPC分类号： H01L45/1226 , G11C13/0004 , H01L27/2436 , H01L27/2463 , H01L45/06 , H01L45/144 , H01L45/1675 , H01L45/1691
摘要： A memory device comprising a first electrode having a top side, a second electrode having a top side and an insulating member between the first electrode and the second electrode. The insulating member has a thickness between the first and second electrodes near the top side of the first electrode and the top side of the second electrode. A bridge of memory material crosses the insulating member, and defines an inter-electrode path between the first and second electrodes across the insulating member. An array of such memory cells is provided. In the array, a plurality of electrode members and insulating members therebetween comprise an electrode layer on an integrated circuit. The bridges of memory material have sub-lithographic dimensions.
摘要翻译：一种存储器件，包括具有顶侧的第一电极，具有顶侧的第二电极和位于第一电极和第二电极之间的绝缘构件。绝缘构件在第一电极的顶侧附近和第二电极的顶侧之间具有在第一和第二电极之间的厚度。记忆材料桥跨越绝缘构件，并且在绝缘构件之间限定了第一和第二电极之间的电极间路径。提供这样的存储单元阵列。在阵列中，多个电极构件和绝缘构件包括集成电路上的电极层。记忆材料的桥梁具有亚光刻尺寸。

9. 发明申请

US20070109843A1 Phase Change Memory Device and Manufacturing Method 有权
标题翻译：相变存储器件和制造方法
公开(公告)号：US20070109843A1
公开(公告)日：2007-05-17
申请号：US11621390
申请日：2007-01-09
申请人： Hsiang Lan Lung , Shih-Hung Chen
发明人： Hsiang Lan Lung , Shih-Hung Chen
IPC分类号： G11C11/00
CPC分类号： G11C13/0004 , G11C2213/79 , H01L27/2436 , H01L45/06 , H01L45/1226 , H01L45/144 , H01L45/148 , H01L45/1675 , H01L45/1691
摘要： A phase change memory device comprises a photolithographically formed phase change memory cell having first and second electrodes and a phase change element positioned between and electrically coupling the opposed contact elements of the electrodes to one another. The phase change element has a width, a length and a thickness. The length, the thickness and the width are less than a minimum photolithographic feature size of the process used to form the phase change memory cell. The size of the photoresist masks used in forming the memory cell may be reduced so that the length and the width of the phase change element are each less than the minimum photolithographic feature size.
摘要翻译：相变存储器件包括具有第一和第二电极的光刻形成的相变存储器单元和位于彼此之间并将电极的相对接触元件彼此电耦合的相变元件。相变元件具有宽度，长度和厚度。长度，厚度和宽度小于用于形成相变存储器单元的工艺的最小光刻特征尺寸。可以减小用于形成存储单元的光致抗蚀剂掩模的尺寸，使得相变元件的长度和宽度均小于最小光刻特征尺寸。

10. 发明授权

US07786460B2 Phase change memory device and manufacturing method 有权
标题翻译：相变存储器件及其制造方法
公开(公告)号：US07786460B2
公开(公告)日：2010-08-31
申请号：US11621390
申请日：2007-01-09
申请人： Hsiang Lan Lung , Shih-Hung Chen
发明人： Hsiang Lan Lung , Shih-Hung Chen
IPC分类号： H01L21/06 , H01L47/00
CPC分类号： G11C13/0004 , G11C2213/79 , H01L27/2436 , H01L45/06 , H01L45/1226 , H01L45/144 , H01L45/148 , H01L45/1675 , H01L45/1691
摘要： A phase change memory device comprises a photolithographically formed phase change memory cell having first and second electrodes and a phase change element positioned between and electrically coupling the opposed contact elements of the electrodes to one another. The phase change element has a width, a length and a thickness. The length, the thickness and the width are less than a minimum photolithographic feature size of the process used to form the phase change memory cell. The size of the photoresist masks used in forming the memory cell may be reduced so that the length and the width of the phase change element are each less than the minimum photolithographic feature size.
摘要翻译：相变存储器件包括具有第一和第二电极的光刻形成的相变存储器单元和位于彼此之间并将电极的相对接触元件彼此电耦合的相变元件。相变元件具有宽度，长度和厚度。长度，厚度和宽度小于用于形成相变存储器单元的工艺的最小光刻特征尺寸。可以减小用于形成存储单元的光致抗蚀剂掩模的尺寸，使得相变元件的长度和宽度都小于最小光刻特征尺寸。

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