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1. 发明授权

US5776833A Method for forming metal plug 失效
标题翻译：金属插头成型方法
公开(公告)号：US5776833A
公开(公告)日：1998-07-07
申请号：US707758
申请日：1996-09-04
申请人： Hsi-Chieh Chen , Champion Yi , Pei-Jan Wang , Yeong-Ruey Shiue
发明人： Hsi-Chieh Chen , Champion Yi , Pei-Jan Wang , Yeong-Ruey Shiue
IPC分类号： H01L21/768 , H01L21/44
CPC分类号： H01L21/76877 , H01L21/7684 , H01L21/76885
摘要： A method for forming a metal plug is provided. The method includes: a) forming a metal contact window in a substrate having an oxide layer; b) forming a barrier layer over a top surface of the oxide layer and a wall defining the metal contact window; c) forming a metal layer covering the barrier layer and filling up the metal contact window; d) removing a portion of the metal layer located above the barrier layer covering the top surface of the oxide layer by a chemical mechanical polishing method; and e) removing the barrier layer covering the top surface of the oxide layer by an etching method.
摘要翻译：提供一种用于形成金属插头的方法。该方法包括：a）在具有氧化物层的衬底中形成金属接触窗; b）在氧化物层的顶表面上形成阻挡层和限定金属接触窗的壁; c）形成覆盖阻挡层并填充金属接触窗的金属层; d）通过化学机械抛光方法去除位于覆盖氧化物层顶表面的阻挡层上方的金属层的一部分; 以及e）通过蚀刻方法除去覆盖氧化物层的顶表面的阻挡层。

2. 发明授权

US6130163A Stabilization of slurry used in chemical mechanical polishing of semiconductor wafers by adjustment of PH of deionized water 失效
标题翻译：通过调整去离子水的PH稳定化用于化学机械抛光半导体晶片的浆料
公开(公告)号：US6130163A
公开(公告)日：2000-10-10
申请号：US326400
申请日：1999-06-03
申请人： Champion Yi , Ching-feng Tsai , Jiun-Fang Wang
发明人： Champion Yi , Ching-feng Tsai , Jiun-Fang Wang
IPC分类号： B24B37/04 , B24B57/02 , H01L21/00
CPC分类号： B24B37/0056 , B24B37/04 , B24B57/02
摘要： A method of reducing agglomerated particles in a slurry for use in a chemical mechanical polishing (CMP) machine, the CMP machine also using deionized water, is disclosed. The method comprises the steps of: monitoring the pH of the slurry that is provided to the CMP machine; monitoring the pH of the deionized water that is provided to the CMP machine; and adjusting the pH of the deionized water to be substantially the same as the pH of the slurry.
摘要翻译：公开了一种在用于化学机械抛光（CMP）机器的浆料中还原附聚颗粒的方法，CMP机器也使用去离子水。该方法包括以下步骤：监测提供给CMP机器的浆料的pH值; 监测提供给CMP机器的去离子水的pH值; 并且将去离子水的pH调节为与浆料的pH基本相同。

3. 发明授权

US06432728B1 Method for integration optimization by chemical mechanical planarization end-pointing technique 失效
标题翻译：通过化学机械平面化终点技术进行集成优化的方法
公开(公告)号：US06432728B1
公开(公告)日：2002-08-13
申请号：US09687163
申请日：2000-10-16
申请人： Shuo-Yen Tai , Ming-Cheng Yang , Jiun-Fang Wang , Champion Yi
发明人： Shuo-Yen Tai , Ming-Cheng Yang , Jiun-Fang Wang , Champion Yi
IPC分类号： H01L2100
CPC分类号： B24B37/013 , B24B49/16 , H01L21/31053 , H01L22/26
摘要： A new method is provided for determining the optimum film thickness of a film that is to be deposited over a semiconductor surface. The invention observes the electrical current and the therefrom resulting torque that is supplied to a rotating part of a polishing apparatus, from this the CMP end-point can be determined for a reference film that has been deposited. This technique is known as the “CMP end-point detection” technique. The invention addresses observing CMP end-point curves for films of various thicknesses and compares these CMP end-point curves of one film thickness with each other and calculates a deviation for multiple layers (deposited on different wafers) of that film thickness. The process is repeated for different film thickness. The film thickness that has a deviation of the CMP end-point curve that closest resembles an optimum deviation is the film thickness that is selected as having the optimum thickness for the deposition of that film.
摘要翻译：提供了一种新的方法来确定要沉积在半导体表面上的膜的最佳膜厚度。本发明观察到电流和由此产生的扭矩，其被提供给抛光装置的旋转部分，从该CMP终点可以确定已沉积的参考膜。这种技术被称为“CMP终点检测”技术。本发明涉及对各种厚度的膜的CMP端点曲线的观察，并将一个膜厚度的这些CMP端点曲线彼此进行比较，并计算该膜厚度的多层（沉积在不同晶片上）的偏差。对于不同的膜厚度重复该过程。具有最接近于最佳偏差的CMP端点曲线的偏差的膜厚度是被选择为具有用于沉积该膜的最佳厚度的膜厚度。

4. 发明授权

US6053802A Stabilization of slurry used in chemical mechanical polishing of semiconductor wafers by megasonic pulse 有权
标题翻译：用于通过兆声波脉冲在半导体晶片的化学机械抛光中使用的浆料的稳定性
公开(公告)号：US6053802A
公开(公告)日：2000-04-25
申请号：US324689
申请日：1999-06-03
申请人： Champion Yi , Jen-Chieh Tung , Jiun-Fang Wang
发明人： Champion Yi , Jen-Chieh Tung , Jiun-Fang Wang
IPC分类号： B24B1/04 , B24B37/00 , B24B55/00 , B24B57/02 , B24B7/19 , B24B7/30
CPC分类号： B24B55/00 , B24B1/04 , B24B37/00 , B24B57/02 , Y10S451/91
摘要： A method and apparatus for conditioning a slurry used in a chemical mechanical polishing apparatus is disclosed. Megasonic generators are provided along the piping network between a slurry reservoir and the CMP apparatus. A megasonic generator may also be placed adjacent to the slurry reservoir. The megasonic generators discourage the formation of agglomerate particles, which in turn reduces the number of defects caused by the large particles in the slurry.
摘要翻译：公开了一种用于调节在化学机械抛光装置中使用的浆料的方法和装置。在浆料储存器和CMP装置之间沿着管道网络提供兆声发电机。兆声波发生器也可以放置在与浆料储存器相邻的位置。兆声波发生器阻止聚集颗粒的形成，这又减少了由浆料中的大颗粒引起的缺陷的数量。

5. 发明授权

US06461226B1 Chemical mechanical polishing of a metal layer using a composite polishing pad 失效
标题翻译：使用复合抛光垫对金属层进行化学机械抛光
公开(公告)号：US06461226B1
公开(公告)日：2002-10-08
申请号：US09654661
申请日：2000-09-05
申请人： Champion Yi
发明人： Champion Yi
IPC分类号： B24B100
CPC分类号： H01L21/3212 , B24B37/042 , B24D7/14 , B24D13/142
摘要： A method of polishing a wafer is disclosed. The wafer has formed thereon an oxide layer that has at least one via. A metal layer is formed on the oxide layer and in the via. The wafer is then polished against an outer portion of a polishing pad until the metal layer outside of the via has been removed. The outer portion has a first hardness. Next, the wafer is polished against an inner portion of the polishing pad. The inner portion of the polishing pad has a second hardness that is less than the first hardness.
摘要翻译：公开了抛光晶片的方法。晶片上形成有具有至少一个通孔的氧化物层。在氧化物层和通孔中形成金属层。然后将晶片抛光抛光垫的外部部分，直到通孔外侧的金属层被去除。外部具有第一硬度。接下来，将晶片相对于抛光垫的内部抛光。抛光垫的内部具有小于第一硬度的第二硬度。

6. 发明授权

US06238279B1 Magnetic filtration for slurry used in chemical mechanical polishing of semiconductor wafers 有权
标题翻译：用于半导体晶片的化学机械抛光的浆料的磁性过滤
公开(公告)号：US06238279B1
公开(公告)日：2001-05-29
申请号：US09326145
申请日：1999-06-03
申请人： Feng-Yeu Shau , Rurng-Chien Chang , Champion Yi
发明人： Feng-Yeu Shau , Rurng-Chien Chang , Champion Yi
IPC分类号： B24B700
CPC分类号： B24B37/04 , B01D35/06 , B03C1/288 , B24B57/02
摘要： A method and apparatus for filtering a slurry used in a chemical mechanical polishing apparatus is disclosed. Magnets are provided along the piping network between a slurry reservoir and the CMP apparatus. A magnet may also be placed adjacent to the slurry reservoir to prevent iron oxide particles from traveling with the slurry to the CMP apparatus. The magnets attract iron oxide particles from the slurry and remove those particles from the slurry prior to polishing. This reduces the amount of defects caused by the iron oxide particles in the slurry.
摘要翻译：公开了一种用于过滤化学机械抛光装置中使用的浆料的方法和装置。在浆料储存器和CMP装置之间沿管道网络设置磁体。也可以将磁体放置在与浆料储存器相邻的位置，以防止氧化铁颗粒随浆料移动到CMP设备。磁体从浆料中吸引氧化铁颗粒，并在抛光之前从浆液中除去这些颗粒。这减少了由浆料中的氧化铁颗粒引起的缺陷的量。

7. 发明授权

US06780092B2 Polishing tool used for CMP 有权
标题翻译：抛光工具用于CMP
公开(公告)号：US06780092B2
公开(公告)日：2004-08-24
申请号：US10126183
申请日：2002-04-19
申请人： Champion Yi
发明人： Champion Yi
IPC分类号： B24B2900
CPC分类号： B24B49/006 , B24B37/04 , B24B41/061
摘要： A polishing tool used for a CMP process is disclosed. The polishing tool includes a polishing platen for holding a wafer faced-up thereon and carrying the wafer to move to and fro between a first position and a second position, a polishing pad for polishing the wafer, and a holder for holding the polishing pad to self-rotate and carrying the polishing pad to move across the wafer surface and further driving the polishing pad to polish the wafer.
摘要翻译：公开了一种用于CMP工艺的抛光工具。抛光工具包括用于将晶片面朝上保持并将晶片在第一位置和第二位置之间来回移动的抛光台板，用于抛光晶片的抛光垫和用于保持抛光垫的保持器自旋转并携带抛光垫移动穿过晶片表面，并进一步驱动抛光垫以抛光晶片。

8. 发明授权

US06227949B1 Two-slurry CMP polishing with different particle size abrasives 有权
标题翻译：不同粒径磨料的二浆CMP抛光
公开(公告)号：US06227949B1
公开(公告)日：2001-05-08
申请号：US09326146
申请日：1999-06-03
申请人： Champion Yi , Rurng-Chien Chang , Jiun-Fang Wang
发明人： Champion Yi , Rurng-Chien Chang , Jiun-Fang Wang
IPC分类号： B24B100
CPC分类号： B24B37/042
摘要： A method for chemical mechanical polishing (CMP) of a wafer having a top layer to be polished is disclosed. The method comprises the steps of: using a CMP apparatus to polish the top layer using a first slurry having abrasive particles of a first size; and using the CMP apparatus to polish the top layer using a second slurry having abrasive particles of a second size, the second size being smaller than the first size.
摘要翻译：公开了具有待抛光顶层的晶片的化学机械抛光（CMP）的方法。该方法包括以下步骤：使用CMP装置来使用具有第一尺寸的磨料颗粒的第一浆料抛光顶层; 以及使用所述CMP装置使用具有第二尺寸的磨料颗粒的第二浆料抛光所述顶层，所述第二尺寸小于所述第一尺寸。

9. 发明授权

US6153116A Method of detecting end point and monitoring uniformity in chemical-mechanical polishing operation 有权
标题翻译：检测化学机械抛光操作终点和监测均匀性的方法
公开(公告)号：US6153116A
公开(公告)日：2000-11-28
申请号：US183446
申请日：1998-10-30
申请人： Ming-Cheng Yang , Feng-Yeu Shau , Cheng-Sung Huang , Champion Yi
发明人： Ming-Cheng Yang , Feng-Yeu Shau , Cheng-Sung Huang , Champion Yi
IPC分类号： B24B37/013 , B24B49/12 , B44C1/22 , H01L21/00
CPC分类号： B24B37/013 , B24B49/12
摘要： A method of monitoring the state of chemical-mechanical polishing that can be applied to the polishing of a metallic layer over a substrate. The method includes performing a series of scanning operations while a wafer is being polished to generate multiple reflectance line spectra in each polishing period. The degree of dispersion of the reflectance spectra is then utilized as a polishing index. In this invention, the standard deviation of the reflectance spectra in each period is used as a monitoring index, and the peak value of the standard deviation is used to determine the polishing end point. Surface uniformity is monitored by using the time interval between two time nodes at half the peak standard deviation values. When the distance of separation between the two time nodes is large, it means that the polished surface is not sufficiently flat.
摘要翻译：一种监测可用于在衬底上抛光金属层的化学 - 机械抛光状态的方法。该方法包括在晶片被抛光时执行一系列扫描操作，以在每个抛光周期中产生多个反射线谱。然后将反射光谱的分散度用作抛光指数。在本发明中，将各期间的反射光谱的标准偏差用作监测指标，使用标准偏差的峰值来确定抛光终点。通过使用峰值标准偏差值的一半的两个时间节点之间的时间间隔来监测表面均匀性。当两个时间节点之间的距离大时，这意味着抛光面不够平坦。

10. 发明授权

US6146260A Polishing machine 有权
标题翻译：抛光机
公开(公告)号：US6146260A
公开(公告)日：2000-11-14
申请号：US128983
申请日：1998-08-03
申请人： Champion Yi
发明人： Champion Yi
IPC分类号： B24B37/32 , H01L21/304 , H01L21/683 , B24B37/04
CPC分类号： B24B37/32
摘要： A wafer adapter for a chemical and mechanical polishing (CMP) machine. The adapter includes a retaining ring with multiple grooves formed on one surface of the ring and an inner circle for grasping just a wafer. The grooves have narrower openings at the outer and wider bottoms at the inner circle of the ring. The bottoms are apart from the inner circle with a circular wall. The adapter with wedged grooves served as slurry pools has been proved to have higher polishing efficiency, no wafer lose by sharp edges collision on the wall and less contact pressure between the wafer and the adapter to extend the lifetime of the adapter.
摘要翻译：用于化学和机械抛光（CMP）机器的晶片适配器。适配器包括形成在环的一个表面上的多个凹槽的保持环和仅用于抓住晶片的内圆。凹槽在环的内圈处的外部和较宽底部具有较窄的开口。底部与具有圆形壁的内圆隔开。已经证明具有用作浆液池的楔形槽的适配器具有更高的抛光效率，没有晶片由于边缘上的尖锐边缘碰撞而损失，并且晶片和适配器之间的较小接触压力延长了适配器的寿命。

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