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    • 3. 发明申请
    • MANUFACTURING METHOD AND SYSTEM OF TARGET
    • 目标的制造方法和系统
    • US20120245725A1
    • 2012-09-27
    • US13428568
    • 2012-03-23
    • Jikai ZHANGJiyu WANHongjiang WUSeungmoo RIM
    • Jikai ZHANGJiyu WANHongjiang WUSeungmoo RIM
    • G06F19/00
    • G01B21/18C23C14/3414G01B2210/56H01J37/3414H01J37/3491
    • The disclosed technology provides a manufacturing method of a target comprising obtaining an initial mass and a residual mass of the target sample, and calculating an etching mass; determining a relative etching depth of the target sample; calculating a relative etching mass based on the etching mass and the relative etching depth; determining a utilization parameter of the target sample based on the relative etching mass and the initial mass of the target sample before being used; and performing a simulation and optimization process on the utilization parameter of the target sample, obtaining target parameters corresponding to a preset value of the utilization parameter, and outputting the target parameters to a manufacturing control center for manufacturing a target. The disclosed technology also provides a manufacturing system of a target.
    • 所公开的技术提供了一种靶的制造方法,包括获得目标样品的初始质量和剩余质量,并计算蚀刻质量; 确定目标样品的相对蚀刻深度; 基于蚀刻质量和相对蚀刻深度计算相对蚀刻质量; 在使用前基于相对蚀刻质量和目标样品的初始质量确定目标样品的利用参数; 对所述目标样本的利用参数进行模拟和优化处理,获得与所述利用参数的预设值相对应的目标参数,并将所述目标参数输出到制造对象的制造控制中心。 所公开的技术还提供了目标的制造系统。