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1. 发明申请

US20110111139A1 LIQUID CRYSTAL ALIGNMENT LAYER AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：液晶对准层及其制造方法
公开(公告)号：US20110111139A1
公开(公告)日：2011-05-12
申请号：US12703306
申请日：2010-02-10
申请人： Hong-Cheu Lin , Wei-Hong Chen , Yung-Lung Mo , Yun-Ching Chuang , Szu-Fen Chen
发明人： Hong-Cheu Lin , Wei-Hong Chen , Yung-Lung Mo , Yun-Ching Chuang , Szu-Fen Chen
IPC分类号： C09K19/56 , B05D5/06
CPC分类号： G02F1/133711 , G02F1/133723 , G02F1/1395 , Y10T428/1014
摘要： A liquid crystal alignment layer and a method for manufacturing the same are provided. The liquid crystal alignment layer includes an organic material layer and a plurality of silicon dioxide particles. The plurality of silicon dioxide particles is formed on the organic material layer, and each silicon dioxide particle contains at least one amino (—NH2) group.
摘要翻译：提供液晶取向层及其制造方法。液晶取向层包括有机材料层和多个二氧化硅颗粒。在有机材料层上形成多个二氧化硅颗粒，每个二氧化硅颗粒含有至少一个氨基（-NH 2）基团。

2. 再颁专利

USRE44531E1 Manufacturing process of thin film transistor 有权
标题翻译：薄膜晶体管的制造工艺
公开(公告)号：USRE44531E1
公开(公告)日：2013-10-08
申请号：US13403800
申请日：2012-02-23
申请人： Min-Ching Hsu , Yung-Lung Mo
发明人： Min-Ching Hsu , Yung-Lung Mo
IPC分类号： H01L21/84
CPC分类号： H01L29/78618 , H01L29/66765
摘要： A thin film transistor includes a gate, a gate insulator layer, a channel layer, a source, a drain, and an ohmic contact layer. The gate insulator layer covers the gate; the channel layer is disposed on the gate insulator layer above the gate; the source and the drain are disposed on the channel layer; the ohmic contact layer is disposed between the channel layer and the source and drain. The ohmic contact layer is constituted by a number of film layers. As mentioned above, the thin film transistor has an ohmic contact layer constituted by a number of film layers. When the thin film transistor is turned off, the current leakage thereof is lowered than that of a conventional thin film transistor.
摘要翻译：薄膜晶体管包括栅极，栅极绝缘体层，沟道层，源极，漏极和欧姆接触层。栅极绝缘体层覆盖栅极; 沟道层设置在栅极上方的栅极绝缘体层上; 源极和漏极设置在沟道层上; 欧姆接触层设置在沟道层和源极和漏极之间。欧姆接触层由多个膜层构成。如上所述，薄膜晶体管具有由多个膜层构成的欧姆接触层。当薄膜晶体管截止时，其电流泄漏比传统的薄膜晶体管低。

3. 发明授权

US07666725B2 Manufacturing process of thin film transistor 有权
标题翻译：薄膜晶体管的制造工艺
公开(公告)号：US07666725B2
公开(公告)日：2010-02-23
申请号：US12338511
申请日：2008-12-18
申请人： Min-Ching Hsu , Yung-Lung Mo
发明人： Min-Ching Hsu , Yung-Lung Mo
IPC分类号： H01L21/84
CPC分类号： H01L29/78618 , H01L29/66765
摘要： A thin film transistor includes a gate, a gate insulator layer, a channel layer, a source, a drain, and an ohmic contact layer. The gate insulator layer covers the gate; the channel layer is disposed on the gate insulator layer above the gate; the source and the drain are disposed on the channel layer; the ohmic contact layer is disposed between the channel layer and the source and drain. The ohmic contact layer is constituted by a number of film layers. As mentioned above, the thin film transistor has an ohmic contact layer constituted by a number of film layers. When the thin film transistor is turned off, the current leakage thereof is lowered than that of a conventional thin film transistor.
摘要翻译：薄膜晶体管包括栅极，栅极绝缘体层，沟道层，源极，漏极和欧姆接触层。栅极绝缘体层覆盖栅极; 沟道层设置在栅极上方的栅极绝缘体层上; 源极和漏极设置在沟道层上; 欧姆接触层设置在沟道层和源极和漏极之间。欧姆接触层由多个膜层构成。如上所述，薄膜晶体管具有由多个膜层构成的欧姆接触层。当薄膜晶体管截止时，其电流泄漏比传统的薄膜晶体管低。

4. 发明申请

US20090098691A1 MANUFACTURING PROCESS OF THIN FILM TRANSISTOR 有权
标题翻译：薄膜晶体管的制造工艺
公开(公告)号：US20090098691A1
公开(公告)日：2009-04-16
申请号：US12338511
申请日：2008-12-18
申请人： Min-Ching Hsu , Yung-Lung Mo
发明人： Min-Ching Hsu , Yung-Lung Mo
IPC分类号： H01L21/336
CPC分类号： H01L29/78618 , H01L29/66765
摘要： A thin film transistor includes a gate, a gate insulator layer, a channel layer, a source, a drain, and an ohmic contact layer. The gate insulator layer covers the gate; the channel layer is disposed on the gate insulator layer above the gate; the source and the drain are disposed on the channel layer; the ohmic contact layer is disposed between the channel layer and the source and drain. The ohmic contact layer is constituted by a number of film layers. As mentioned above, the thin film transistor has an ohmic contact layer constituted by a number of film layers. When the thin film transistor is turned off, the current leakage thereof is lowered than that of a conventional thin film transistor.
摘要翻译：薄膜晶体管包括栅极，栅极绝缘体层，沟道层，源极，漏极和欧姆接触层。栅极绝缘体层覆盖栅极; 沟道层设置在栅极上方的栅极绝缘体层上; 源极和漏极设置在沟道层上; 欧姆接触层设置在沟道层和源极和漏极之间。欧姆接触层由多个膜层构成。如上所述，薄膜晶体管具有由多个膜层构成的欧姆接触层。当薄膜晶体管截止时，其电流泄漏比传统的薄膜晶体管低。

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