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1. 发明申请

US20130270104A1 COMBINATORIAL PROCESSING USING MOSAIC SPUTTERING TARGETS 审中-公开
标题翻译：使用MOSAIC溅射目标的组合处理
公开(公告)号：US20130270104A1
公开(公告)日：2013-10-17
申请号：US13444100
申请日：2012-04-11
申请人： Hong Sheng Yang , Chi-l Lang , Yun Wang
发明人： Hong Sheng Yang , Chi-l Lang , Yun Wang
IPC分类号： C23C14/35
CPC分类号： C23C14/042 , C23C14/352 , C23C14/548
摘要： Embodiments of the present invention provide methods and apparatuses using sputtering from a mosaic sputtering target for depositing layers onto a substrate, and provide the capability of depositing layers onto site isolated regions of the substrate in a combinatorial manner. A sputtering source is provided including a sputtering target comprising a first region having a first composition, and a second region having a second composition. A selection mechanism is capable of selecting a composition of emitted material from the sputtering source that can range from 0% to 100% of the first composition and from 0% to 100% of the second composition. The selection mechanism can comprise a movable magnetron or a moveable aperture.
摘要翻译：本发明的实施方案提供了使用来自马赛克溅射靶的溅射的方法和装置，用于将层沉积到衬底上，并提供以组合方式将层沉积到衬底的位置隔离区上的能力。提供溅射源，其包括溅射靶，其包括具有第一组成的第一区域和具有第二组成的第二区域。选择机构能够从溅射源选择发射材料的组成，该组成可以在第一组分的0％至100％和第二组合物的0％至100％的范围内。选择机构可以包括可移动磁控管或可移动孔。

2. 发明授权

US08779407B2 Multifunctional electrode 有权
公开(公告)号：US08779407B2
公开(公告)日：2014-07-15
申请号：US13367662
申请日：2012-02-07
申请人： Hieu Pham , Vidyut Gopal , Imran Hashim , Dipankar Pramanik , Yun Wang , Hong Sheng Yang
发明人： Hieu Pham , Vidyut Gopal , Imran Hashim , Dipankar Pramanik , Yun Wang , Hong Sheng Yang
IPC分类号： H01L29/02
CPC分类号： C23C14/345 , C23C14/0042 , C23C14/0641 , C23C14/083 , C23C14/225 , H01L27/2409 , H01L27/2463 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/1266 , H01L45/145 , H01L45/146 , H01L45/16 , H01L45/1608 , H01L45/1616 , H01L45/1625
摘要： A nonvolatile memory element is disclosed comprising a first electrode, a near-stoichiometric metal oxide memory layer having bistable resistance, and a second electrode in contact with the near-stoichiometric metal oxide memory layer. At least one electrode is a resistive electrode comprising a sub-stoichiometric transition metal nitride or oxynitride, and has a resistivity between 0.1 and 10 Ωcm. The resistive electrode provides the functionality of an embedded current-limiting resistor and also serves as a source and sink of oxygen vacancies for setting and resetting the resistance state of the metal oxide layer. Novel fabrication methods for the second electrode are also disclosed.

3. 发明授权

US08569104B2 Transition metal oxide bilayers 有权
公开(公告)号：US08569104B2
公开(公告)日：2013-10-29
申请号：US13367927
申请日：2012-02-07
申请人： Hieu Pham , Vidyut Gopal , Imran Hashim , Tim Minvielle , Yun Wang , Takeshi Yamaguchi , Hong Sheng Yang
发明人： Hieu Pham , Vidyut Gopal , Imran Hashim , Tim Minvielle , Yun Wang , Takeshi Yamaguchi , Hong Sheng Yang
IPC分类号： H01L29/02
CPC分类号： H01L45/08 , H01L27/2409 , H01L27/2463 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/16 , H01L45/1616 , H01L45/1625 , H01L45/1641
摘要： Embodiments of the invention include nonvolatile memory elements and memory devices comprising the nonvolatile memory elements. Methods for forming the nonvolatile memory elements are also disclosed. The nonvolatile memory element comprises a first electrode layer, a second electrode layer, and a plurality of layers of an oxide disposed between the first and second electrode layers. One of the oxide layers has linear resistance and substoichiometric composition, and the other oxide layer has bistable resistance and near-stoichiometric composition. Preferably, the sum of the two oxide layer thicknesses is between about 20 Å and about 100 Å, and the oxide layer with bistable resistance has a thickness between about 25% and about 75% of the total thickness. In one embodiment, the oxide layers are formed using reactive sputtering in an atmosphere with controlled flows of argon and oxygen.

4. 发明申请

US20130200324A1 Transition Metal Oxide Bilayers 有权
公开(公告)号：US20130200324A1
公开(公告)日：2013-08-08
申请号：US13367927
申请日：2012-02-07
申请人： Hieu Pham , Vidyut Gopal , Imran Hashim , Yun Wang , Hong Sheng Yang
发明人： Hieu Pham , Vidyut Gopal , Imran Hashim , Yun Wang , Hong Sheng Yang
IPC分类号： H01L45/00
CPC分类号： H01L45/08 , H01L27/2409 , H01L27/2463 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/16 , H01L45/1616 , H01L45/1625 , H01L45/1641
摘要： Embodiments of the invention include nonvolatile memory elements and memory devices comprising the nonvolatile memory elements. Methods for forming the nonvolatile memory elements are also disclosed. The nonvolatile memory element comprises a first electrode layer, a second electrode layer, and a plurality of layers of an oxide disposed between the first and second electrode layers. One of the oxide layers has linear resistance and substoichiometric composition, and the other oxide layer has bistable resistance and near-stoichiometric composition. Preferably, the sum of the two oxide layer thicknesses is between about 20 Å and about 100 Å, and the oxide layer with bistable resistance has a thickness between about 25% and about 75% of the total thickness. In one embodiment, the oxide layers are formed using reactive sputtering in an atmosphere with controlled flows of argon and oxygen.

5. 发明申请

US20130200323A1 MULTIFUNCTIONAL ELECTRODE 有权
标题翻译：多功能电极
公开(公告)号：US20130200323A1
公开(公告)日：2013-08-08
申请号：US13367662
申请日：2012-02-07
申请人： Hieu Pham , Vidyut Gopal , Imran Hashim , Dipankar Pramanik , Yun Wang , Hong Sheng Yang
发明人： Hieu Pham , Vidyut Gopal , Imran Hashim , Dipankar Pramanik , Yun Wang , Hong Sheng Yang
IPC分类号： H01L45/00
CPC分类号： C23C14/345 , C23C14/0042 , C23C14/0641 , C23C14/083 , C23C14/225 , H01L27/2409 , H01L27/2463 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/1266 , H01L45/145 , H01L45/146 , H01L45/16 , H01L45/1608 , H01L45/1616 , H01L45/1625
摘要： A nonvolatile memory element is disclosed comprising a first electrode, a near-stoichiometric metal oxide memory layer having bistable resistance, and a second electrode in contact with the near-stoichiometric metal oxide memory layer. At least one electrode is a resistive electrode comprising a sub-stoichiometric transition metal nitride or oxynitride, and has a resistivity between 0.1 and 10 Ω cm. The resistive electrode provides the functionality of an embedded current-limiting resistor and also serves as a source and sink of oxygen vacancies for setting and resetting the resistance state of the metal oxide layer. Novel fabrication methods for the second electrode are also disclosed.
摘要翻译：公开了一种非易失性存储元件，其包括第一电极，具有双稳态电阻的近化学计量的金属氧化物存储层和与近化学计量的金属氧化物存储层接触的第二电极。至少一个电极是包括亚化学计量的过渡金属氮化物或氮氧化物的电阻电极，并且具有0.1至10Ωcm的电阻率。电阻电极提供嵌入式限流电阻器的功能，并且还用作用于设置和复位金属氧化物层的电阻状态的氧空位的源极和吸收器。还公开了用于第二电极的新颖制造方法。

6. 发明授权

US08683420B2 Method and system of improved reliability testing 有权
标题翻译：改进可靠性测试方法和系统
公开(公告)号：US08683420B2
公开(公告)日：2014-03-25
申请号：US12948257
申请日：2010-11-17
申请人： Yun Wang , Tony P. Chiang , Ryan Clarke , Chi-I Lang , Yoram Schwarz
发明人： Yun Wang , Tony P. Chiang , Ryan Clarke , Chi-I Lang , Yoram Schwarz
IPC分类号： G06F17/50
CPC分类号： H01L22/14
摘要： A method and system of improved reliability testing includes providing a first substrate and a second substrate, each substrate comprising only a first metallization layer; processing regions on a first substrate by combinatorially varying at least one of materials, unit processes, and process sequences; performing a first reliability test on the processed regions on the first substrate to generate first results; processing regions on a second substrate in a combinatorial manner by varying at least one of materials, unit processes, and process sequences based on the first results of the first reliability test; performing a second reliability test on the processed regions on the second substrate to generate second results; and determining whether the first substrate and the second substrate meet a predetermined quality threshold based on the second results.
摘要翻译：改进的可靠性测试的方法和系统包括提供第一衬底和第二衬底，每个衬底仅包括第一金属化层; 通过组合地改变材料，单元过程和工艺顺序中的至少一个来处理第一衬底上的处理区域; 对所述第一基板上的所述经处理区域进行第一可靠性测试以产生第一结果; 基于第一可靠性测试的第一结果，通过改变材料，单元过程和过程序列中的至少一个来以组合的方式处理第二基板上的区域; 对所述第二基板上的所述经处理区域进行第二可靠性测试以产生第二结果; 以及基于所述第二结果来确定所述第一基板和所述第二基板是否满足预定质量阈值。

7. 发明申请

US20140057457A1 Non-melt thin-wafer laser thermal annealing methods 有权
标题翻译：非熔化薄晶片激光热退火方法
公开(公告)号：US20140057457A1
公开(公告)日：2014-02-27
申请号：US13595873
申请日：2012-08-27
申请人： Yun Wang , Andrew M. Hawryluk , Xiaoru Wang , Xiaohua Shen
发明人： Yun Wang , Andrew M. Hawryluk , Xiaoru Wang , Xiaohua Shen
IPC分类号： H01L21/268 , H01L21/02
CPC分类号： H01L21/268 , H01L21/02107 , H01L21/28518 , H01L27/14634 , H01L27/1469
摘要： Methods of annealing a thin semiconductor wafer are disclosed. The methods allow for high-temperature annealing of one side of a thin semiconductor wafer without damaging or overheating heat-sensitive electronic device features that are either on the other side of the wafer or embedded within the wafer. The annealing is performed at a temperature below the melting point of the wafer so that no significant dopant redistribution occurs during the annealing process. The methods can be applied to activating dopants or to forming ohmic contacts.
摘要翻译：公开了薄半导体晶片的退火方法。该方法允许薄半导体晶片的一侧进行高温退火，而不会损坏或过热晶片另一侧或嵌入晶片内的热敏电子器件特征。在低于晶片的熔点的温度下进行退火，使得在退火过程中不会发生显着的掺杂剂再分布。该方法可用于活化掺杂剂或形成欧姆接触。

8. 发明授权

US08589621B2 Object persistency 有权
标题翻译：对象持久性
公开(公告)号：US08589621B2
公开(公告)日：2013-11-19
申请号：US13192347
申请日：2011-07-27
申请人： Qing F. Wang , Yun Wang
发明人： Qing F. Wang , Yun Wang
IPC分类号： G06F12/00 , G06F13/00 , G06F13/28
CPC分类号： G06F9/4493
摘要： There is provided a method and computer system for object persistency that includes: running a program; storing an object of the program into a random access memory in response to determining that the object is a non-persistent object; and storing the object into a phase change memory in response to determining that the object is a persistent object. The method and computer system of the present disclosure do not need separate persistency layers, such that the programming model is light weighted, the persistency of object data is more simple and fast, and implicit transaction process is supported, thereby a great deal of development and runtime costs are saved.
摘要翻译：提供了一种用于对象持久性的方法和计算机系统，包括：运行程序; 响应于确定所述对象是非持久对象，将所述程序的对象存储到随机存取存储器中; 以及响应于确定所述对象是持久对象而将所述对象存储到相变存储器中。本公开的方法和计算机系统不需要单独的持久层，使得编程模型轻量化，对象数据的持久性更加简单快速，并且支持隐式事务处理，从而大量开发和保存运行时费用。

9. 发明申请

US20130134373A1 NONVOLATILE RESISTIVE MEMORY ELEMENT WITH A NOVEL SWITCHING LAYER 审中-公开
标题翻译：具有新开关层的非易失性电阻记忆元件
公开(公告)号：US20130134373A1
公开(公告)日：2013-05-30
申请号：US13305568
申请日：2011-11-28
申请人： Yun Wang , Imran Hashim , Tony Chiang
发明人： Yun Wang , Imran Hashim , Tony Chiang
IPC分类号： H01L45/00
CPC分类号： G11C13/0007 , H01L27/2409 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/147
摘要： A nonvolatile resistive memory element has a novel variable resistance layer comprising one or more rare-earth oxides. The rare-earth oxide has a high k value, a high bandgap energy, and the ability to maintain an amorphous structure after thermal anneal processes. Thus, the novel variable resistance layer facilitates improved switching performance and reliability of the resistive memory element.
摘要翻译：非易失性电阻存储元件具有包含一种或多种稀土氧化物的新颖的可变电阻层。稀土氧化物具有高k值，高带隙能，以及热退火工艺后保持非晶结构的能力。因此，新颖的可变电阻层有助于提高电阻式存储元件的开关性能和可靠性。

10. 发明申请

US20130071984A1 ATOMIC LAYER DEPOSITION OF HAFNIUM AND ZIRCONIUM OXIDES FOR MEMORY APPLICATIONS 有权
标题翻译：用于存储器应用的铪和氧化锆的原子层沉积
公开(公告)号：US20130071984A1
公开(公告)日：2013-03-21
申请号：US13236481
申请日：2011-09-19
申请人： Yun Wang , Vidyut Gopal , Imran Hashim , Dipankar Pramanik , Tony Chiang
发明人： Yun Wang , Vidyut Gopal , Imran Hashim , Dipankar Pramanik , Tony Chiang
IPC分类号： H01L45/00
CPC分类号： H01L45/146 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/1616
摘要： Embodiments of the invention generally relate to nonvolatile memory devices and methods for manufacturing such memory devices. The methods for forming improved memory devices, such as a ReRAM cells, provide optimized, atomic layer deposition (ALD) processes for forming a metal oxide film stack having a metal oxide buffer layer disposed on or over a metal oxide bulk layer. The metal oxide bulk layer contains a metal-rich oxide material and the metal oxide buffer layer contains a metal-poor oxide material. The metal oxide bulk layer is less electrically resistive than the metal oxide buffer layer since the metal oxide bulk layer is less oxidized or more metallic than the metal oxide buffer layer. In one example, the metal oxide bulk layer contains a metal-rich hafnium oxide material and the metal oxide buffer layer contains a metal-poor zirconium oxide material.
摘要翻译：本发明的实施例一般涉及用于制造这种存储器件的非易失性存储器件和方法。用于形成改进的存储器件（例如ReRAM单元）的方法提供优化的原子层沉积（ALD）工艺，用于形成金属氧化物膜堆叠，其具有设置在金属氧化物本体层上或其上的金属氧化物缓冲层。金属氧化物本体层含有富金属氧化物材料，金属氧化物缓冲层含有贫金属氧化物。由于金属氧化物本体层比金属氧化物缓冲层氧化较少或更金属，所以金属氧化物本体层的电阻小于金属氧化物缓冲层的电阻。在一个实例中，金属氧化物本体层含有富金属氧化铪材料，金属氧化物缓冲层含有贫金属氧化锆材料。

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