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    • 5. 发明授权
    • Selective high k dielectrics removal
    • 选择性高k电介质去除
    • US06818516B1
    • 2004-11-16
    • US10629496
    • 2003-07-29
    • Wai LoHong LinShiqun GuJames R. B. Elmer
    • Wai LoHong LinShiqun GuJames R. B. Elmer
    • H01L21336
    • H01L29/6659H01L21/31111
    • A method of forming a gate structure in an integrated circuit on a substrate. A high k layer is formed on the substrate, and a gate electrode layer is formed on the high k layer. The gate electrode layer is the patterned. LDD regions are formed using an ion implantation process, thereby creating damaged portions of the high k layer. A first portion of the damaged portions of the high k layer are removed, thereby defining a gate structure, and leaving remaining portions of the damaged portions of the high k layer. Sidewall spacers are formed adjacent the gate structure. Source/drain regions are formed using an ion implantation process, thereby further damaging the remaining portions of the damaged portions of the high k layer. The remaining portions of the damaged portions of the high k layer are then removed.
    • 在基板上的集成电路中形成栅极结构的方法。 在基板上形成高k层,在高k层上形成栅电极层。 栅极电极层是图案化的。 使用离子注入工艺形成LDD区域,从而产生高k层的损坏部分。 去除高k层的损坏部分的第一部分,从而限定栅极结构,并留下高k层的损坏部分的剩余部分。 侧壁间隔件形成在栅极结构附近。 使用离子注入工艺形成源极/漏极区,从而进一步损坏高k层的损伤部分的剩余部分。 然后去除高k层的损坏部分的剩余部分。
    • 6. 发明申请
    • Superconductor wires for back end interconnects
    • 用于后端互连的超导线
    • US20060197193A1
    • 2006-09-07
    • US11072158
    • 2005-03-04
    • Shiqun GuWai LoHong Lin
    • Shiqun GuWai LoHong Lin
    • H01L39/00
    • H01L21/76838H01L21/76834H01L23/53285H01L2924/0002H01L2924/00
    • An improvement to an integrated circuit, of electrically conductive interconnects formed of a superconducting material. In this manner, the electrically conductive interconnects can be made very small, and yet still have adequate conductively. In various embodiments, all of the electrically conductive interconnects are formed of the superconducting material. In some embodiments, the electrically conductive interconnects are formed of a variety of different superconducting materials. In one embodiment, only the backend electrically conductive interconnects are formed of the superconducting material. In some embodiments no vias are formed of the superconducting material. The interconductor dielectric layers are preferably formed of silicon oxide, and sometimes all of the interconductor dielectric layers are formed of silicon oxide. The superconducting material is in some embodiments at least one of an organic compound such as a potassium doped buckminsterfullerene, a cesium doped buckminsterfullerene, and other carbon containing compounds, a metallic material such as an inter-metallic material like Nb—Ti alloys and other substances formed by alloying metals, and an inorganic compound such as YBa2Cu3O7-x, (Pb,Bi)2Sr2Ca2Cu3O10-x and its derivatives, HgBaCaCuO and its derivatives, and TI—Ba—Ca—Cu—O and its derivatives.
    • 对由超导材料形成的导电互连的集成电路的改进。 以这种方式,可以使导电互连非常小,但仍然具有足够的导电性。 在各种实施例中,所有导电互连由超导材料形成。 在一些实施例中,导电互连由各种不同的超导材料形成。 在一个实施例中,只有后端导电互连由超导材料形成。 在一些实施例中,没有由超导材料形成通孔。 互导体电介质层优选由氧化硅形成,并且有时所有的互导电介质层均由氧化硅形成。 在一些实施方案中,超导材料是有机化合物,例如掺杂钾的巴克敏斯特富勒烯,掺杂铯的德克敏斯特富勒烯和其它含碳化合物中的至少一种,金属材料如诸如Nb-Ti合金的金属间材料和其它物质 由金属合金化而形成的无机化合物,例如YBa 2 N 3 O 7-x X,(Pb,Bi)2 Sr 2 O 2和其衍生物HgBaCaCuO及其衍生物 和TI-Ba-Ca-Cu-O及其衍生物。
    • 8. 发明授权
    • Superconductor wires for back end interconnects
    • 用于后端互连的超导线
    • US07341978B2
    • 2008-03-11
    • US11072158
    • 2005-03-04
    • Shiqun GuWai LoHong Lin
    • Shiqun GuWai LoHong Lin
    • H01L33/00
    • H01L21/76838H01L21/76834H01L23/53285H01L2924/0002H01L2924/00
    • An improvement to an integrated circuit, of electrically conductive interconnects formed of a superconducting material. In this manner, the electrically conductive interconnects can be made very small, and yet still have adequate conductively. In various embodiments, all of the electrically conductive interconnects are formed of the superconducting material. In some embodiments, the electrically conductive interconnects are formed of a variety of different superconducting materials. In one embodiment, only the backend electrically conductive interconnects are formed of the superconducting material. In some embodiments no vias are formed of the superconducting material. The interconductor dielectric layers are preferably formed of silicon oxide, and sometimes all of the interconductor dielectric layers are formed of silicon oxide. The superconducting material is in some embodiments at least one of an organic compound such as a potassium doped buckminsterfullerene, a cesium doped buckminsterfullerene, and other carbon containing compounds, a metallic material such as an inter-metallic material like Nb—Ti alloys and other substances formed by alloying metals, and an inorganic compound such as YBa2Cu3O7-x, (Pb,Bi)2Sr2Ca2Cu3O10-x and its derivatives, HgBaCaCuO and its derivatives, and TI—Ba—Ca—Cu—O and its derivatives.
    • 对由超导材料形成的导电互连的集成电路的改进。 以这种方式,可以使导电互连非常小,但仍然具有足够的导电性。 在各种实施例中,所有导电互连由超导材料形成。 在一些实施例中,导电互连由各种不同的超导材料形成。 在一个实施例中,只有后端导电互连由超导材料形成。 在一些实施例中,没有由超导材料形成通孔。 互导体电介质层优选由氧化硅形成,并且有时所有的互导电介质层均由氧化硅形成。 在一些实施方案中,超导材料是有机化合物,例如掺杂钾的巴克敏斯特富勒烯,掺杂铯的德克敏斯特富勒烯和其它含碳化合物中的至少一种,金属材料如诸如Nb-Ti合金的金属间材料和其它物质 由金属合金化而形成的无机化合物,例如YBa 2 N 3 O 7-x X,(Pb,Bi)2 Sr 2 O 2和其衍生物HgBaCaCuO及其衍生物 和TI-Ba-Ca-Cu-O及其衍生物。