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1. 发明申请

US20120152460A1 TEST MASK SET AND MASK SET 审中-公开
标题翻译：测试面膜设置和面膜设置
公开(公告)号：US20120152460A1
公开(公告)日：2012-06-21
申请号：US13238308
申请日：2011-09-21
申请人： Ho-Young KIM , Seung-Jae LEE , Bo-Un YOON
发明人： Ho-Young KIM , Seung-Jae LEE , Bo-Un YOON
IPC分类号： C23F1/08
CPC分类号： G03F1/50 , G03F1/44 , H01L21/28 , H01L29/165 , H01L29/66545 , H01L29/66628
摘要： A test mask set includes a first test mask having a plurality of gate pattern areas disposed therein, each of the plurality of gate pattern areas having one or more gate patterns; and a second test mask having a plurality of active pattern areas disposed therein, each of the plurality of active pattern areas having one or more active patterns. The gate patterns formed in different areas among the plurality of gate pattern areas differ in at least one of a gate spacing or a gate width. The active patterns formed in different areas among the plurality of active pattern areas differ in at least one of an active spacing or an active width
摘要翻译：测试掩模组包括第一测试掩模，其中设置有多个栅极图案区域，多个栅极图案区域中的每一个具有一个或多个栅极图案; 以及设置在其中的多个有源图案区域的第二测试掩模，所述多个有源图案区域中的每一个具有一个或多个活动图案。形成在多个栅极图案区域中的不同区域中的栅极图案在栅极间隔或栅极宽度中的至少一个方面不同。形成在多个有源图案区域中的不同区域中的活动图案在有效间隔或有效宽度中的至少一个方面不同

2. 发明申请

US20130012021A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20130012021A1
公开(公告)日：2013-01-10
申请号：US13526960
申请日：2012-06-19
申请人： Jung-Chan LEE , Yoo-Jung LEE , Ki-Hyung KO , Dae-Young KWAK , Seung-Jae LEE , Jae-Sung HUR , Sang-Bom KANG , Cheol KIM , Bo-Un YOON
发明人： Jung-Chan LEE , Yoo-Jung LEE , Ki-Hyung KO , Dae-Young KWAK , Seung-Jae LEE , Jae-Sung HUR , Sang-Bom KANG , Cheol KIM , Bo-Un YOON
IPC分类号： H01L21/283
CPC分类号： H01L29/4983 , H01L21/76895 , H01L21/82345 , H01L29/49 , H01L29/66545 , H01L29/78
摘要： A method of manufacturing a semiconductor device includes forming an interlayer dielectric film that has first and second trenches on first and second regions of a substrate, respectively, forming a first metal layer along a sidewall and a bottom surface of the first trench and along a top surface of the interlayer dielectric film in the first region, forming a second metal layer along a sidewall and a bottom surface of the second trench and along a top surface of the interlayer dielectric film in the second region, forming a first sacrificial layer pattern on the first metal layer such that the first sacrificial layer fills a portion of the first trench, forming a first electrode layer by etching the first metal layer and the second metal layer using the first sacrificial layer pattern, and removing the first sacrificial layer pattern.
摘要翻译：一种制造半导体器件的方法包括：在衬底的第一和第二区域上分别形成具有第一和第二沟槽的层间电介质膜，沿着第一沟槽的侧壁和底表面沿顶部形成第一金属层在所述第一区域中的所述层间电介质膜的表面，沿着所述第二沟槽的侧壁和底表面沿着所述第二区域中的所述层间电介质膜的顶表面形成第二金属层，在所述第二区域中形成第一牺牲层图案第一金属层，使得第一牺牲层填充第一沟槽的一部分，通过使用第一牺牲层图案蚀刻第一金属层和第二金属层形成第一电极层，以及去除第一牺牲层图案。

3. 发明申请

US20130285103A1 LIGHT EMITTING ELEMENTS, LIGH EMITTING DEVICES INCLUDING LIGHT EMITTING ELEMENTS AND METHODS OF MANUFACTURING SUCH LIGHT EMITTING ELEMENTS AND/OR DEVICES 审中-公开
标题翻译：发光元件，包括发光元件的发光装置和制造这种发光元件和/或器件的方法
公开(公告)号：US20130285103A1
公开(公告)日：2013-10-31
申请号：US13930606
申请日：2013-06-28
申请人： Yu-Sik KIM , Seung-Jae LEE
发明人： Yu-Sik KIM , Seung-Jae LEE
IPC分类号： H01L33/20
CPC分类号： H01L33/20 , H01L25/0753 , H01L33/145 , H01L33/405 , H01L33/44 , H01L33/507 , H01L2224/45139 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/00011 , H01L2924/10158 , H01L2924/181 , H01L2924/00 , H01L2924/00014 , H01L2924/00012 , H01L2924/01039
摘要： An emitting device including a first electrode, a second electrode spaced apart from the first electrode, an emitting pattern including a portion between the first electrode and the second electrode, and a block pattern including a portion between the emitting pattern and the first electrode and/or on a same level as the first electrode.
摘要翻译：一种发光装置，包括第一电极，与第一电极间隔开的第二电极，包括第一电极和第二电极之间的部分的发射图案，以及包括在发光图案与第一电极之间的部分和/ 或在与第一电极相同的水平上。

4. 发明申请

US20120127201A1 APPARATUS AND METHOD FOR PROVIDING AUGMENTED REALITY USER INTERFACE 审中-公开
标题翻译：提供实现用户界面的设备和方法
公开(公告)号：US20120127201A1
公开(公告)日：2012-05-24
申请号：US13195576
申请日：2011-08-01
申请人： Ki-Nam KIM , Hea-Beck YANG , Seung-Jae LEE
发明人： Ki-Nam KIM , Hea-Beck YANG , Seung-Jae LEE
IPC分类号： G09G5/377
CPC分类号： G09G5/377 , G09G5/024 , G09G5/026 , G09G5/397
摘要： An apparatus and method for providing an augmented reality user interface are provided. The method may be as follows. An augmented reality image is stored. The augmented reality is obtained by overlapping an image with augmented reality information, which is related to at least one object included in the image. The stored augmented reality image and an augmented reality image, which is captured in real time, are output through a divided display user interface at the same time.
摘要翻译：提供了一种用于提供增强现实用户界面的装置和方法。该方法可以如下。存储增强现实图像。增强现实是通过与包括在图像中的至少一个对象相关的增强现实信息重叠图像而获得的。存储的增强现实图像和实时捕获的增强现实图像通过分割的显示用户界面同时输出。

5. 发明申请

US20110047323A1 MEMORY SYSTEM, MULTI-BIT FLASH MEMORY DEVICE, AND ASSOCIATED METHODS 有权
公开(公告)号：US20110047323A1
公开(公告)日：2011-02-24
申请号：US12915303
申请日：2010-10-29
申请人： Seung-Jae LEE
发明人： Seung-Jae LEE
IPC分类号： G06F12/00 , G06F12/02
CPC分类号： G06F12/0246
摘要： A memory system includes a multi-bit flash memory device and a flash controller configured to control the multi-bit flash memory device. The flash controller is configured to output a series of commands, pointers, and addresses to the multi-bit flash memory device for read/program operations.

6. 发明申请

US20120170370A1 NONVOLATILE MEMORY DEVICE AND NONVOLATILE MEMORY SYSTEM EMPLOYING SAME 有权
标题翻译：非易失性存储器件和非易失性存储器系统
公开(公告)号：US20120170370A1
公开(公告)日：2012-07-05
申请号：US13419732
申请日：2012-03-14
申请人： Seung-Jae LEE , Dae-Seok BYEON , Hyun-Chul HA
发明人： Seung-Jae LEE , Dae-Seok BYEON , Hyun-Chul HA
IPC分类号： G11C16/28
CPC分类号： G11C16/28 , G11C16/0408
摘要： A nonvolatile memory device comprises a memory cell array, a row selection circuit and a voltage generator. The memory cell array comprises a first dummy memory cell, a second dummy memory cell, and a NAND string comprising a plurality of memory cells coupled in series between a string selection transistor and a ground selection transistor through the first dummy memory cell and the second dummy memory cell. During a read-out operation mode, a dummy read-out voltage is applied to a first dummy wordline coupled to the first dummy memory cell, and to a second dummy wordline coupled to the second dummy memory cell. The dummy read-out voltage has a lower magnitude than a read-out voltage applied to an unselected memory cell during the read-out operation mode.
摘要翻译：非易失性存储器件包括存储单元阵列，行选择电路和电压发生器。存储单元阵列包括第一虚拟存储单元，第二虚拟存储单元和NAND串，其包括通过第一虚拟存储单元和第二虚拟存储单元串联耦合在串选择晶体管和接地选择晶体管之间的多个存储单元记忆单元在读出操作模式期间，将虚拟读出电压施加到耦合到第一虚拟存储器单元的第一伪字线以及耦合到第二虚拟存储单元的第二虚拟字线。在读出操作模式期间，虚拟读出电压具有比在未选择存储单元上施加的读出电压更低的量值。

7. 发明申请

US20100146637A1 METHOD FOR MOVING RIGHTS OBJECT IN DIGITAL RIGHTS MANAGEMENT 审中-公开
标题翻译：在数字权限管理中移动权利对象的方法
公开(公告)号：US20100146637A1
公开(公告)日：2010-06-10
申请号：US12705502
申请日：2010-02-12
申请人： Seung-Jae LEE
发明人： Seung-Jae LEE
IPC分类号： G06F21/24
CPC分类号： H04L63/065 , G06F21/10 , G06F2221/0786 , H04L63/0428 , H04L63/104 , H04L2463/101
摘要： A method for moving Rights Object (RO) in a Digital Rights Management (DRM). RO for content is partially or entirely moved between Devices in the same group, so that the RO can be shared between the Devices and a utility thereof can be enhanced.
摘要翻译：一种在数字版权管理（DRM）中移动权限对象（RO）的方法。用于内容的RO部分或全部在同一组中的设备之间移动，从而可以在设备之间共享RO，并且可以增强其效用。

8. 发明申请

US20090190412A1 NONVOLATILE MEMORY DEVICE WITH LOAD-FREE WIRED-OR STRUCTURE AND AN ASSOCIATED DRIVING METHOD 有权
标题翻译：具有无负载的有线或结构的非易失性存储器件和相关的驱动方法
公开(公告)号：US20090190412A1
公开(公告)日：2009-07-30
申请号：US12371390
申请日：2009-02-13
申请人： Seung-Jae LEE
发明人： Seung-Jae LEE
IPC分类号： G11C7/00
CPC分类号： G11C16/3459 , G11C16/0483 , G11C16/24 , G11C16/3454
摘要： A nonvolatile semiconductor memory device includes an internal output line, and a page buffers. Each page buffer is coupled to at least one bitline, the internal output line, and a data input line physically distinct from the internal output line, and configured to pull the internal output line to an output drive voltage in response to a bitline voltage on one of the bitlines coupled to the page buffer.
摘要翻译：非易失性半导体存储器件包括内部输出线和页缓冲器。每个页缓冲器耦合到至少一个位线，内部输出线和物理上不同于内部输出线的数据输入线，并且被配置为响应于一个位线电压将内部输出线拉到输出驱动电压的位线耦合到页面缓冲区。

9. 发明申请

US20090165143A1 METHOD FOR MOVING RIGHTS OBJECT AND METHOD FOR MANAGING RIGHTS OF ISSUING RIGHTS OBJECT AND SYSTEM THEREOF 审中-公开
标题翻译：移动权利对象的方法和管理发布权利对象及其系统的权利的方法
公开(公告)号：US20090165143A1
公开(公告)日：2009-06-25
申请号：US12332983
申请日：2008-12-11
申请人： Seung-Jae LEE
发明人： Seung-Jae LEE
IPC分类号： G06F21/00
CPC分类号： H04L63/10 , G06F21/10 , G06F2221/0706 , H04L2463/101
摘要： Disclosed is a method for managing rights of issuing a Rights Object (RO), and a method for moving an RO created by a Local Rights Manager (LRM) between Digital Rights Management (DRM) Agents. A Right Issuer (RI) permits an LRM to move an RO created (or issued) by the LRM to move via the RI, and a first DRM Agent moves the RO to a second DRM Agent via the RI.
摘要翻译：公开了一种用于管理发布权利对象（RO）的权利的方法，以及用于移动由数字版权管理（DRM）代理之间的本地权限管理器（LRM）创建的RO的方法。权利发行者（RI）允许LRM移动由LRM创建（或发布）的RO以经由RI移动，并且第一DRM代理经由RI将RO移动到第二DRM代理。

10. 发明申请

US20080310234A1 NONVOLATILE MEMORY DEVICE AND METHODS OF PROGRAMMING AND READING THE SAME 有权
标题翻译：非易失性存储器件及其编程和读取方法
公开(公告)号：US20080310234A1
公开(公告)日：2008-12-18
申请号：US12136150
申请日：2008-06-10
申请人： Seung-Jae LEE , Dong-Hyuk CHAE , Dong-Ku KANG
发明人： Seung-Jae LEE , Dong-Hyuk CHAE , Dong-Ku KANG
IPC分类号： G11C16/06 , G11C7/00
CPC分类号： G11C16/10 , G11C16/26 , G11C2216/14
摘要： A read method of a non-volatile memory device includes reading an initial threshold voltage value of an index cell from threshold voltage information cells that store information indicating the initial threshold voltage, determining a current threshold voltage value from the index cell, and comparing the initial threshold voltage value and the current threshold voltage value to calculate a shifted threshold voltage level of the index cell. A read voltage is changed by the shifted threshold voltage level to read user data using the changed read voltage.
摘要翻译：非易失性存储器件的读取方法包括从存储指示初始阈值电压的信息的阈值电压信息单元读取索引单元的初始阈值电压值，从索引单元确定当前阈值电压值，以及比较初始值阈值电压值和电流阈值电压值，以计算索引单元的偏移阈值电压电平。读取电压由偏移的阈值电压电平改变，以便使用改变的读取电压来读取用户数据。

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