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    • 1. 发明申请
    • Method for manufacturing capacitor of semiconductor element
    • 制造半导体元件电容器的方法
    • US20060134856A1
    • 2006-06-22
    • US11089122
    • 2005-03-24
    • Ho ChoJun ChangEun LeeSu ChaeYoung Kim
    • Ho ChoJun ChangEun LeeSu ChaeYoung Kim
    • H01L21/8242
    • H01L21/02312H01L21/02178H01L21/02181H01L21/022H01L21/3144H01L28/60
    • A method for manufacturing a capacitor of a semiconductor element including: forming a bottom electrode of the capacitor on a semiconductor substrate; performing rapid thermal nitrification (RTN) on the upper surface of the bottom electrode; performing a thermal process on the obtained structure having the bottom electrode in a furnace under a nitride atmosphere to eliminate stress generated by the RTN; forming Al2O3 and HfO2 dielectric films on the nitrified bottom electrode; and forming a plate electrode of the capacitor on the Al2O3 and HfO2 dielectric films. The thermal process is performed after the RTN performed on the surface of the bottom electrode, so that stress, generated from the RTN, is alleviated, thereby allowing the capacitor to obtain a high capacitance and lowering leakage current.
    • 一种制造半导体元件的电容器的方法,包括:在半导体衬底上形成电容器的底部电极; 在底电极的上表面进行快速热硝化(RTN); 对所获得的在氮化物气氛下的炉中具有底部电极的结构进行热处理以消除由RTN产生的应力; 在硝化的底部电极上形成Al 2 O 3 N 3和HfO 2 N 2电介质膜; 以及在Al 2 O 3和HfO 2 N 2电介质膜上形成电容器的平板电极。 在底电极表面进行RTN之后进行热处理,从而可以减轻由RTN产生的应力,从而使电容器获得高电容,降低漏电流。
    • 5. 发明申请
    • Gate structure of semiconductor device and method for forming the same
    • 半导体器件的栅极结构及其形成方法
    • US20060151839A1
    • 2006-07-13
    • US11268846
    • 2005-11-08
    • Young KimJun ChangMin LeeYong Eun
    • Young KimJun ChangMin LeeYong Eun
    • H01L29/78H01L21/4763
    • H01L27/10876H01L21/2815H01L29/66636
    • Disclosed herein is a method for forming a gate structure of a semiconductor device. The method comprises forming a plurality of gates including a first gate dielectric film, a first gate conductive film, and a gate silicide film sequentially stacked on a silicon substrate having a field oxide film, forming a thermal oxide film on a side of the first gate conductive film, etching the silicon substrate exposed between the plurality of gates to a predetermined depth to form a plurality of trenches, forming a second gate oxide film on the interior wall of the trenches, and forming a second gate conductive film in a spacer shape on a predetermined region of the second gate oxide film, and on a side of the first gate conductive film, the gate silicide film, and the thermal oxide film.
    • 本文公开了一种用于形成半导体器件的栅极结构的方法。 该方法包括形成多个栅极,其包括依次层叠在具有场氧化膜的硅基板上的第一栅极电介质膜,第一栅极导电膜和栅极硅化物膜,在第一栅极的一侧形成热氧化膜 将暴露在所述多个栅极之间的硅衬底蚀刻到预定深度以形成多个沟槽,在所述沟槽的内壁上形成第二栅极氧化膜,并且形成间隔物形状的第二栅极导电膜 第二栅极氧化膜的预定区域,以及第一栅极导电膜,栅极硅化物膜和热氧化物膜的一侧。
    • 9. 发明申请
    • Crash recovery system and method for distributed file server using object based storage
    • 使用基于对象的存储的分布式文件服务器的崩溃恢复系统和方法
    • US20060129614A1
    • 2006-06-15
    • US11231158
    • 2005-09-20
    • Hong KimKi JinYoung KimYoung KimMi LeeMyung Kim
    • Hong KimKi JinYoung KimYoung KimMi LeeMyung Kim
    • G06F17/30
    • G06F11/1435G06F11/1448G06F11/1451G06F11/1464G06F11/1469
    • A crash recovery system and method for distributed file server using object based storage are provided. The system includes: a client for accessing a file system using an object-based storage device (OSDFS), transmitting a command to an object-based storage device (OSD) and accessing a metadata server (MDS); a network for providing an interface and transferring data between the client, the metadata server and the object-based storage device; an object-based storage device for analyzing the command from the client and performing corresponding operations of the command; and a metadata server for storing and managing metadata controlling a direct access to a predetermined file from the client to the object based storage device in order to provide the metadata to the client, and checking and recovering a consistency of the stored and managed metadata when the OSDFS is malfunctioned.
    • 提供了一种使用基于对象的存储的分布式文件服务器的崩溃恢复系统和方法。 该系统包括:用于使用基于对象的存储设备(OSDFS)访问文件系统的客户机,向基于对象的存储设备(OSD)发送命令并访问元数据服务器(MDS); 用于提供接口并在客户端,元数据服务器和基于对象的存储设备之间传送数据的网络; 基于对象的存储装置,用于分析来自客户机的命令并执行命令的相应操作; 以及用于存储和管理元数据的元数据服务器,其控制从客户机到基于对象的存储设备直接访问预定文件,以便向客户端提供元数据,以及当存储和管理的元数据的一致性时 OSDFS发生故障。