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    • 2. 发明授权
    • Motor-operated valve
    • 电动阀门
    • US07165755B2
    • 2007-01-23
    • US11209443
    • 2005-08-23
    • Hitoshi UmezawaYasushi Inoue
    • Hitoshi UmezawaYasushi Inoue
    • F16K31/04
    • F16K31/047F25B41/062F25B2309/061F25B2341/0653Y02B30/72
    • A motor-operated valve comprising a valve stem having a valve plug; a valve body having a valve seat with which the valve plug is enabled to removably contact; a can fixed to the valve body; a rotor disposed coaxially in the can; a stator disposed around an outer circumferential surface of the can; a guide bush fixedly secured to the valve body and having an axial hollow portion in which the valve stem is permitted to slidably move; and a valve stem holder; wherein the valve stem is enabled to rotate integral with the valve stem holder and to move in the longitudinal direction thereof relative to the valve stem holder. The motor-operated valve is further provided with a flow rate adjusting feed screw mechanism which is constituted by a first stationary threaded portion and a first movable threaded portion; and with a rotation regulating feed screw mechanism which is constituted by a second stationary threaded portion and a second movable threaded portion. The pitch of the flow rate adjusting feed screw mechanism is made smaller than the pitch of the rotation regulating feed screw mechanism.
    • 一种电动阀,包括具有阀塞的阀杆; 阀体,其具有阀座,阀塞能够通过该阀座可拆卸地接触; 一个可固定在阀体上的罐; 同轴地设置在罐中的转子; 定子,其围绕所述罐的外周面设置; 导向衬套,固定地固定到阀体上并具有轴向中空部分,阀杆允许滑动地移动; 和阀杆支架; 其中所述阀杆能够与所述阀杆保持器一体地旋转并且相对于所述阀杆保持器在其纵向方向上移动。 电动阀还具有由第一静止螺纹部和第一可动螺纹部构成的流量调整进给螺杆机构, 并具有由第二静止螺纹部和第二可动螺纹部构成的旋转调节进给螺杆机构。 流量调节进给螺杆机构的间距小于旋转调节进给螺杆机构的间距。
    • 5. 发明申请
    • Motor-operated valve
    • 电动阀门
    • US20060043325A1
    • 2006-03-02
    • US11209443
    • 2005-08-23
    • Hitoshi UmezawaYasushi Inoue
    • Hitoshi UmezawaYasushi Inoue
    • F16K31/02
    • F16K31/047F25B41/062F25B2309/061F25B2341/0653Y02B30/72
    • A motor-operated valve comprising a valve stem having a valve plug; a valve body having a valve seat with which the valve plug is enabled to removably contact; a can fixed to the valve body; a rotor disposed coaxially in the can; a stator disposed around an outer circumferential surface of the can; a guide bush fixedly secured to the valve body and having an axial hollow portion in which the valve stem is permitted to slidably move; and a valve stem holder; wherein the valve stem is enabled to rotate integral with the valve stem holder and to move in the longitudinal direction thereof relative to the valve stem holder. The motor-operated valve is further provided with a flow rate adjusting feed screw mechanism which is constituted by a first stationary threaded portion and a first movable threaded portion; and with a rotation regulating feed screw mechanism which is constituted by a second stationary threaded portion and a second movable threaded portion. The pitch of the flow rate adjusting feed screw mechanism is made smaller than the pitch of the rotation regulating feed screw mechanism.
    • 一种电动阀,包括具有阀塞的阀杆; 阀体,其具有阀座,阀塞能够通过该阀座可拆卸地接触; 一个可固定在阀体上的罐; 同轴地设置在罐中的转子; 定子,其围绕所述罐的外周面设置; 导向衬套,固定地固定到阀体上并具有轴向中空部分,阀杆允许滑动地移动; 和阀杆支架; 其中所述阀杆能够与所述阀杆保持器一体地旋转并且相对于所述阀杆保持器在其纵向方向上移动。 电动阀还具有由第一静止螺纹部和第一可动螺纹部构成的流量调整进给螺杆机构, 并具有由第二静止螺纹部和第二可动螺纹部构成的旋转调节进给螺杆机构。 流量调节进给螺杆机构的间距小于旋转调节进给螺杆机构的间距。
    • 6. 发明授权
    • Schottky diamond semiconductor device and manufacturing method for a Schottky electrode for diamond semiconductor device
    • 肖特基金刚石半导体器件及用于金刚石半导体器件的肖特基电极的制造方法
    • US08237170B2
    • 2012-08-07
    • US12597578
    • 2008-04-14
    • Kazuhiro IkedaHitoshi UmezawaShinichi Shikata
    • Kazuhiro IkedaHitoshi UmezawaShinichi Shikata
    • H01L29/15
    • H01L29/47C22C5/04H01L21/0435H01L29/1602H01L29/6603H01L29/872
    • To provide a Schottky electrode in a diamond semiconductor, which has a good adhesion properties to diamonds, has a contacting surface which does not become peeled due to an irregularity in an external mechanical pressure, does not cause a reduction in yield in a diode forming process and does not cause deterioration in current-voltage characteristics, and a method of manufacturing the Schottky electrode.A Schottky electrode which includes: scattered island-form pattern Pt-group alloy thin films which are formed on a diamond surface formed on a substrate, in which the Pt-group alloy includes 50 to 99.9 mass % of Pt and 0.1 to 50 mass % of Ru and/or Ir, or which includes electrodes in a scattered island pattern, including: scattered island-form pattern metal thin films which are formed on a diamond surface formed on a substrate and include one selected from Pt and Pd; and metal thin films which include one selected from Ru, Ir and Rh and are provided on all of the metal thin films which include one selected from Pt and Pd, and a method of manufacturing the Schottky electrode.
    • 为了在金刚石半导体中提供肖特基电极,该金刚石半导体具有良好的金刚石粘合性,具有由于外部机械压力不均匀而不会剥离的接触表面,在二极管形成过程中不会导致产率降低 并且不会导致电流 - 电压特性的劣化,以及制造肖特基电极的方法。 一种肖特基电极,其包括:形成在形成于基板上的金刚石表面上的散射岛状图案Pt族合金薄膜,其中Pt族合金包含Pt为50〜99.9质量%,0.1〜50质量% 包括:散射岛状图案金属薄膜,其形成在形成于基板上的金刚石表面上,并且包括选自Pt和Pd中的一种; 以及包括选自Ru,Ir和Rh中的一种并且设置在包括选自Pt和Pd中的一种的所有金属薄膜上的金属薄膜和制造肖特基电极的方法。
    • 8. 发明申请
    • SCHOTTKY ELECTRODE FOR DIAMOND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    • 肖特基电极用于金刚石半导体器件及其制造方法
    • US20100117098A1
    • 2010-05-13
    • US12597578
    • 2008-04-14
    • Kazuhiro IkedaHitoshi UmezawaShinichi Shikata
    • Kazuhiro IkedaHitoshi UmezawaShinichi Shikata
    • H01L29/47H01L29/12H01L21/04
    • H01L29/47C22C5/04H01L21/0435H01L29/1602H01L29/6603H01L29/872
    • To provide a Schottky electrode in a diamond semiconductor, which has a good adhesion properties to diamonds, has a contacting surface which does not become peeled due to an irregularity in an external mechanical pressure, does not cause a reduction in yield in a diode forming process and does not cause deterioration in current-voltage characteristics, and a method of manufacturing the Schottky electrode.A Schottky electrode which includes: scattered island-form pattern Pt-group alloy thin films which are formed on a diamond surface formed on a substrate, in which the Pt-group alloy includes 50 to 99.9 mass % of Pt and 0.1 to 50 mass % of Ru and/or Ir, or which includes electrodes in a scattered island pattern, including: scattered island-form pattern metal thin films which are formed on a diamond surface formed on a substrate and include one selected from Pt and Pd; and metal thin films which include one selected from Ru, Ir and Rh and are provided on all of the metal thin films which include one selected from Pt and Pd, and a method of manufacturing the Schottky electrode.
    • 为了在金刚石半导体中提供肖特基电极,该金刚石半导体具有良好的金刚石粘合性,具有由于外部机械压力不均匀而不会剥离的接触表面,在二极管形成过程中不会导致产率降低 并且不会导致电流 - 电压特性的劣化,以及制造肖特基电极的方法。 一种肖特基电极,其包括:形成在形成于基板上的金刚石表面上的散射岛状图案Pt族合金薄膜,其中Pt族合金包含Pt为50〜99.9质量%,0.1〜50质量% 包括:散射岛状图案金属薄膜,其形成在形成于基板上的金刚石表面上,并且包括选自Pt和Pd中的一种; 以及包括选自Ru,Ir和Rh中的一种并且设置在包括选自Pt和Pd中的一种的所有金属薄膜上的金属薄膜和制造肖特基电极的方法。