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    • 1. 发明授权
    • Imaging apparatus
    • 成像设备
    • US08665357B2
    • 2014-03-04
    • US13421295
    • 2012-03-15
    • Hideto IshiguroHitoshi TsuchiyaTsukasa Eguchi
    • Hideto IshiguroHitoshi TsuchiyaTsukasa Eguchi
    • H04N5/225
    • H01L27/14623H01L27/14627
    • An imaging apparatus includes light-transmitting substrate; a plurality of lenses which faces a first surface of the substrate; a light shielding layer which is formed on the second surface of the substrate and has an opening section through which optical axes of each lens pass; and a plurality of light sensing elements which is placed so that the optical axes of the lenses pass through a light sensing surface facing the second surface at an interval. An efficient diameter of the lens, a diameter of the opening section, a distance between the light sensing surfaces and the light shielding layer, a diameter of the light sensing surface, and a distance between the light sensing surface and center of the lens satisfy a sin−1(1/n).
    • 成像装置包括透光基板; 面对基板的第一表面的多个透镜; 遮光层,其形成在所述基板的第二表面上,并且具有开口部,每个透镜的光轴穿过所述开口部; 以及多个光感测元件,其被放置成使得透镜的光轴以一定间隔穿过面对第二表面的感光表面。 透镜的有效直径,开口部分的直径,光感测表面和遮光层之间的距离,光感测表面的直径以及光感测表面和透镜中心之间的距离满足 sin(1 / n)<(h·D + h·ds·d)/ s和tan-1 {(pa / 2-d / 2)/ h}
    • 6. 发明授权
    • Method of manufacturing semiconductor device, method of manufacturing active matrix substrate, and electrooptic device
    • 制造半导体器件的方法,制造有源矩阵衬底的方法和电光器件
    • US06306693B1
    • 2001-10-23
    • US09657901
    • 2000-09-08
    • Hideto IshiguroMinoru MatsuoHiroyuki MuraiMasami Hayashi
    • Hideto IshiguroMinoru MatsuoHiroyuki MuraiMasami Hayashi
    • H01L2100
    • H01L27/127H01L27/1214H01L27/1255H01L29/66757H01L29/78621H01L2029/7863
    • To provide a method of manufacturing a semiconductor device, a method of manufacturing an active matrix substrate, and an electrooptic device in which in forming different type TFTs on the same substrate, a variation in the LDD length or offset length of TFT can be suppressed by a small number of steps. In the method of manufacturing an active matrix substrate, a patterning mask 554 used for forming gate electrodes 15 and 25 is left, and used in introducing a medium concentration of phosphorus ion to introduce impurities in self alignment with the patterning mask 554. Next, with the patterning mask 554 removed, low-concentration of phosphorus ion is introduced by using the gate electrodes 15 and 25 as a mask to form low-concentration source-drain regions 111, 121, 211 and 221 in self alignment with the gate electrodes 15 and 25. The LDD length of each of the regions is equal to the amount of side etching caused in patterning the gate electrodes 15 and 25.
    • 为了提供一种制造半导体器件的方法,制造有源矩阵衬底的方法和电光器件,其中在同一衬底上形成不同类型的TFT时,TFT的LDD长度或偏移长度的变化可以通过 少数步骤。 在制造有源矩阵基板的方法中,留下用于形成栅电极15和25的图形掩模554,用于引入中等浓度的磷离子以引入与图案化掩模554自对准的杂质。接下来, 去除图案化掩模554,通过使用栅电极15和25作为掩模来引入低浓度的磷离子,以形成与栅电极15自对准的低浓度源极 - 漏极区域111,121,211和221,以及 每个区域的LDD长度等于在图案化栅电极15和25时引起的侧蚀刻量。
    • 10. 发明授权
    • Method of driving pixel circuit, light-emitting apparatus, and electronic apparatus
    • 驱动像素电路,发光装置和电子设备的方法
    • US08310416B2
    • 2012-11-13
    • US12499485
    • 2009-07-08
    • Satoshi YatabeHideto Ishiguro
    • Satoshi YatabeHideto Ishiguro
    • G09G3/30G09G5/00G06F3/038
    • G09G3/3233G09G2300/043G09G2300/0819G09G2300/0852G09G2320/043
    • There is provided a method of driving a pixel circuit. The method includes: performing a compensating operation of asymptotically causing the voltage across the storage capacitance to converge with a voltage corresponding to a threshold voltage of the driving transistor by applying a first reference voltage to the gate of the driving transistor, over a time duration variably set according to a gradation value designated to the pixel circuit, in a compensating period after the elapse of the resetting period; changing the voltage across the storage capacitance from a voltage set by the compensating operation to a voltage corresponding to the gradation value by applying a gradation voltage corresponding to the gradation value from a signal line to the gate of the driving transistor, in a writing period after the elapse of the compensating period.
    • 提供了驱动像素电路的方法。 该方法包括:通过在可变的时间段上施加第一参考电压到驱动晶体管的栅极,执行渐近地使存储电容两端的电压与对应于驱动晶体管的阈值电压的电压收敛的补偿操作 在经过复位周期后的补偿期间,根据指定给像素电路的灰度值进行设定; 将存储电容的电压从通过补偿操作设定的电压改变为对应于灰度值的电压,通过在写入周期之后的写入周期中将与来自信号线的灰度值相对应的灰度电压施加到驱动晶体管的栅极 经过补偿期。