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    • 5. 发明授权
    • Image data processing device and image data processing method
    • 图像数据处理装置和图像数据处理方法
    • US08165390B2
    • 2012-04-24
    • US12141491
    • 2008-06-18
    • Kazumasa KunugiAkira MatsushitaHiroyuki Fukuda
    • Kazumasa KunugiAkira MatsushitaHiroyuki Fukuda
    • G06K9/00
    • G06T11/001
    • N-band image data are output from an N-band image capture device, being capable of N>4 multiband image capturing, to an image data processing device. An image data evaluation information provision unit provides a determination unit with evaluation information on the basis of the input N-band image data. On the basis of the evaluation information, the determination unit determines whether to set the N-band image data or M-band image data having a smaller band number than the N-band image data as image data to be output. On the basis of a determination result of the determination unit, an output image data selection unit selects either the N-band image data or the M-band image data as the image data to be output to an image data recording unit.
    • 将N波段图像数据从能够进行N> 4多波段图像捕获的N波段图像捕获装置输出到图像数据处理装置。 图像数据评估信息提供单元基于输入的N波段图像数据向判定单元提供评估信息。 基于评价信息,确定单元确定是否将具有比N波段图像数据更小的带数的N波段图像数据或M波段图像数据设置为要输出的图像数据。 基于确定单元的确定结果,输出图像数据选择单元选择N波段图像数据或M波段图像数据作为要输出到图像数据记录单元的图像数据。
    • 7. 发明授权
    • Thin film formation apparatus including engagement members for support during thermal expansion
    • 薄膜形成装置包括用于在热膨胀期间支撑的接合构件
    • US07032536B2
    • 2006-04-25
    • US10680213
    • 2003-10-08
    • Yusuke FukuokaYasushi FujiokaKatsushi KishimotoHiroyuki FukudaKatsuhiko Nomoto
    • Yusuke FukuokaYasushi FujiokaKatsushi KishimotoHiroyuki FukudaKatsuhiko Nomoto
    • C23C16/50
    • H01J37/32009C23C16/5096H01J37/32082H01J37/32568H01J37/32724
    • A thin film formation apparatus for forming a thin film on a substrate is provided, which comprises: a reaction chamber; a gas introduction section for introducing a reactant gas into the reaction chamber; an evacuation section for exhausting the reactant gas from the reaction chamber; first and second planar electrodes provided in the reaction chamber; first and second support members which respectively support the first and second electrodes in parallel relation; a high frequency power source for applying high frequency power between the first and second electrodes; and a heating section for heating one of the first and second electrodes; wherein the substrate is placed on the heated electrode, and at least one of the first and second electrodes is supported movably in the direction of thermal expansion by the corresponding support member. With this arrangement, the variation in the spacing between the first electrode (anode electrode) and the second electrode (cathode electrode) can be reduced when the first and second electrodes are heated.
    • 提供一种用于在基板上形成薄膜的薄膜形成装置,其包括:反应室; 用于将反应气体引入反应室的气体导入部, 用于从反应室排出反应气体的排气部; 设置在反应室中的第一和第二平面电极; 第一和第二支撑构件,其分别以平行关系支撑第一和第二电极; 用于在第一和第二电极之间施加高频电力的高频电源; 以及用于加热所述第一和第二电极之一的加热部分; 其中所述基板被放置在所述加热的电极上,并且所述第一和第二电极中的至少一个被所述相应的支撑构件沿热膨胀的方向可移动地支撑。 利用这种布置,当第一和第二电极被加热时,可以减小第一电极(阳极电极)和第二电极(阴极电极)之间的间隔的变化。