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    • 1. 发明专利
    • Production of fluorescent substance
    • 生产荧光物质
    • JPS5971386A
    • 1984-04-23
    • JP17987082
    • 1982-10-15
    • Hitachi LtdKasei Optonix Co Ltd
    • KANEHISA OSAMUYAMAMOTO AKIRAMANABE TOSHIKATSUUEHARA YASUHIKO
    • C09K11/08C09K11/56
    • PURPOSE: To mass produce easily a fluorescent substance having a high luminace, by adding an activator, an organic compound capable of generating sulfurizing gas and sulfur to a raw material, and heating the resultant mixture in a closed vessel.
      CONSTITUTION: (B) Ce, Pr, Nd, Sm or Eu, etc. as an activator, (C) an organic compound capable of generating 0.1W3.0mol, based on one mole formed fluorescent substance, sulfurizing gas, e.g. (ethylene)thiourea or thioacetamide, (D) sulfur and further preferably (E) an alkali metallic compound, e.g. Li
      2 CO
      3 , are added to (A) a compound consisting of Mg, Ca or Sr as a raw material, and the resultant mixture is then heated at 1,200°C for 2hr in a closed vessel to give the aimed fluorescent substance.
      COPYRIGHT: (C)1984,JPO&Japio
    • 目的:通过向原料中添加能够产生硫化气体和硫的有机化合物,并将所得混合物加热到密闭容器中,可以容易地大规模生产具有高亮度的荧光物质。 构成:(B)Ce,Pr,Nd,Sm或Eu等作为活化剂,(C)基于1摩尔形成的荧光物质,能够产生0.1-3.0摩尔的有机化合物,例如硫化气体。 (乙烯)硫脲或硫代乙酰胺,(D)硫,进一步优选(E)碱金属化合物,例如。 将Li 2 CO 3添加到(A)由作为原料的Mg,Ca或Sr组成的化合物中,然后将所得混合物在密封容器中在1,200℃加热2小时,得到目标荧光物质。
    • 7. 发明专利
    • THIN FILM FORMATION AND SYSTEM THEREFOR
    • JPS61151092A
    • 1986-07-09
    • JP27086884
    • 1984-12-24
    • HITACHI LTD
    • UDA MASAHITOKANEHISA OSAMUYAMAMOTO AKIRASUZUKI ATSUSHI
    • C30B25/02C30B29/48C30B31/22H01L21/205
    • PURPOSE:When a thin film is formed through vapor-phase chemical reaction, the base plate is irradiated with a specific ion to give a semiconductor thin film of good electrical and optical properties. CONSTITUTION:The base plate is prepared by forming an Al2O3 thin film of about 2,000Angstrom on a glass plate by sputtering in an evacuated reactor 1. Then, Zn(C2H5)2 is introduced into the reactor and the pressure is adjusted to about 10 Torr. The base plate is kept at about 80 deg.C to effect deposition for about 2hr whereby a fine-crystal film composed of Zn, S and carbon compounds is formed in a thickness of about 7mu. The carbon remaining in the film is about 3X10 /cm . In the meantime, a film is formed under the same conditions and the film is simultaneously irradiated with H ions of 70eV accelerating voltage and 100nA/cm to form a hexagonal crystal film of ZnS of 1.3mu thickness more than 70%. The remaining crystal mainly has the cubic structure and the concentration of the remaining carbon is 2X10 /cm . Thus, crystal growth rate is doubled in comparison with the case of no ion irradiation and the carbon content is reduced by about 3 digits.