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1. 发明专利

JP2012114104A Storage insulation gate type field effect transistor 审中-公开
标题翻译：存储绝缘门型场效应晶体管
公开(公告)号：JP2012114104A
公开(公告)日：2012-06-14
申请号：JP2009040720
申请日：2009-02-24
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： OKINO YASUYUKI , ONOSE HIDEKATSU , YOKOYAMA NATSUKI , ONO TOSHIYUKI
IPC分类号： H01L29/78 , H01L21/336 , H01L29/12
CPC分类号： H01L29/7828 , H01L29/0847 , H01L29/1608 , H01L29/41766 , H01L29/4236 , H01L29/66068
摘要： PROBLEM TO BE SOLVED: To provide a storage type MOSFET which can reduce on-resistance more than possible in conventional examples while maintaining normally-off characteristics.SOLUTION: The stored type MOSFET of the prevent invention, having an ntype SiC as a drain region, comprises: an ntype SiC drift layer abutting on the ntype drain region; p type SiC base regions within the ntype SiC drift layer; ntype SiC source regions within the p type SiC base regions; and an ntype SiC storage channel region formed in the p type base regions, the ntype source regions and the surface layer section of the ntype SiC drift layer. A gate insulation film is provided in the storage channel region. The storage channel region includes a first region formed in a constant thickness from the p type base regions and a second region consisting of other than the first region, the impurity concentration of the second region being higher than that of the first region.
摘要翻译：要解决的问题：提供一种存储型MOSFET，其可以在保持常态特性的同时在常规示例中更可能地降低导通电阻。解决方案：具有n + 型SiC作为漏极区的防止发明的存储型MOSFET包括：n 型SiC漂移层邻接在n + 型漏极区域; p型SiC基区在n - 型SiC漂移层中; 在p型SiC基区内形成SiC源区;在<！ - SIPO - 型SiC存储沟道区域，n + 型源极区域和表面 SiC层漂移层。栅极绝缘膜设置在存储沟道区域中。存储通道区域包括从p型基极区域形成为恒定厚度的第一区域和由第一区域以外的第二区域构成的第二区域，第二区域的杂质浓度高于第一区域的杂质浓度。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2013042054A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2013042054A
公开(公告)日：2013-02-28
申请号：JP2011179331
申请日：2011-08-19
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： OKINO YASUYUKI , SHIMAMOTO YASUHIRO , HAMAMURA HIROTAKA
IPC分类号： H01L29/12 , H01L21/336 , H01L29/78
CPC分类号： H01L29/66068 , H01L23/3192 , H01L29/0615 , H01L29/0619 , H01L29/0638 , H01L29/1095 , H01L29/1608 , H01L29/7811 , H01L29/8611 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To achieve a termination structure capable of maintaining stable withstanding voltage even when a high electrical field is applied to a passivation film on a substrate principal surface in a semiconductor device having a power device on the semiconductor substrate containing a silicon carbide.SOLUTION: A semiconductor device comprises a passivation film 6 on a p-type impurity region forming a termination structure of an SiC power device, which has a lamination structure including a first silicon oxide film 6a contacting an SiC, a metal insulation film 6b on the first silicon oxide film 6a and a second silicon oxide film 6c on the metal insulation film 6b. The film thickness of the metal insulation film 6b is 0.3 nm or more to 10 nm or less. Accordingly, effective charge of the passivation film 6 is made negative.
摘要翻译：要解决的问题：为了实现能够保持稳定的耐受电压的端接结构，即使在半导体衬底中的具有功率器件的半导体器件中的基板主表面上的钝化膜上施加高电场时，碳化硅。解决方案：半导体器件包括在形成SiC功率器件的端接结构的p型杂质区上的钝化膜6，其具有包括与SiC接触的第一氧化硅膜6a，金属绝缘膜 6b上的第一氧化硅膜6a和金属绝缘膜6b上的第二氧化硅膜6c。金属绝缘膜6b的膜厚为0.3nm以上至10nm以下。因此，钝化膜6的有效电荷为负。版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2012231019A Silicon carbide diode 有权
标题翻译：硅碳化二极管
公开(公告)号：JP2012231019A
公开(公告)日：2012-11-22
申请号：JP2011098412
申请日：2011-04-26
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： OKINO YASUYUKI , SHIMAMOTO YASUHIRO , KAMESHIRO NORIFUMI
IPC分类号： H01L29/868 , H01L21/329 , H01L29/06 , H01L29/47 , H01L29/861 , H01L29/872
CPC分类号： H01L29/872
摘要： PROBLEM TO BE SOLVED: To provide a technique capable of suppressing a conduction deterioration phenomenon without lowering surge resistance in an SiC JBS diode.SOLUTION: In a silicon carbide diode, a plurality of first 1p regions 6 in ohmic contact with an anode electrode 4 and a plurality of second regions 7 isolated from the first 1p regions 6 and in Schottky contact with the anode electrode 4 are formed on a surface side within an ndrift layer 2 of an active region, the 1p regions 6 are arranged in the direction with an interval from each other, the interval being broader than two times of a hole diffusion length when the active region is projected on the (11-20) face, and each of the second regions 7 is arranged between two of the first 1p regions 6 arranged in the direction.
摘要翻译：要解决的问题：提供能够抑制导通劣化现象而不降低SiC JBS二极管的浪涌电阻的技术。解决方案：在碳化硅二极管中，与阳极电极4欧姆接触的多个第一1p区域6和与第一1p区域6隔离并与阳极电极4肖特基接触的多个第二区域7是形成在有源区域的n - 漂移层2内的表面侧，1p区域6以<1-100>方向彼此间隔布置，当有源区域投射在（11-20）面上时，该间隔大于空穴扩散长度的两倍，并且每个第二区域7布置在布置在第一区域中的第一1p区域6中的两个之间， 100>方向。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2012178483A Silicon-carbide semiconductor apparatus and manufacturing method thereof 有权
标题翻译：硅碳化硅半导体器件及其制造方法
公开(公告)号：JP2012178483A
公开(公告)日：2012-09-13
申请号：JP2011041091
申请日：2011-02-28
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： TEGA NAOKI , SHIMAMOTO YASUHIRO , MORI TOMONORI , HAMAMURA HIROTAKA , OKINO YASUYUKI , HISAMOTO MASARU
IPC分类号： H01L29/12 , H01L29/78
CPC分类号： H01L29/66068 , H01L21/0475 , H01L21/0485 , H01L29/1608 , H01L29/42372 , H01L29/42376 , H01L29/4238 , H01L29/45 , H01L29/513 , H01L29/518 , H01L29/7802 , H01L29/7813
摘要： PROBLEM TO BE SOLVED: To solve the problem in which, if metal silicide annealing is performed on a source region in a MOSFET of SiC before gate insulating film formation, a metal silicide film in the source region is oxidized by oxidization processing (including acid nitriding processing) in the gate insulating film formation and resistance in the source region may become high.SOLUTION: A metal silicide layer 110 provided on a surface of an SiC epitaxial substrate 103 is formed beforehand in a gate insulating film interface layer (oxidized film) 116, and an anti-oxidization film 112 for the metal silicide layer is formed on the metal silicide layer. Therefore, oxidization of the metal silicide layer can be suppressed even during oxidization processing in forming the gate insulating film interface layer, and resistance in a source region can be reduced without reducing channel mobility.
摘要翻译：解决的问题为了解决如果在栅极绝缘膜形成之前对SiC的MOSFET中的源极区域进行金属硅化物退火，则源极区域中的金属硅化物膜通过氧化处理而被氧化（包括酸性氮化处理）在栅极绝缘膜形成中，源极区域的电阻可能变高。解决方案：预先在栅极绝缘膜界面层（氧化膜）116中形成设置在SiC外延基板103的表面上的金属硅化物层110，并且形成用于金属硅化物层的抗氧化膜112 在金属硅化物层上。因此，即使在形成栅极绝缘膜界面层的氧化处理中也可以抑制金属硅化物层的氧化，并且可以在不降低沟道迁移率的情况下降低源区中的电阻。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JPS60242266A CONTRUCTION OF SQUARE LINING TANK 失效
公开(公告)号：JPS60242266A
公开(公告)日：1985-12-02
申请号：JP9624684
申请日：1984-05-14
申请人： HITACHI LTD , KAJIMA CORP
发明人： OKINO YASUYUKI , KAWASAKI HIROBUMI , MATSUMOTO TAKASHI , TSUCHIYA NAOHITO , SHINTANI TAKESHI , KAKEHASHI MASAJI , TAKEDA MASAYOSHI
IPC分类号： E04H7/18 , B65D90/04 , E04G21/02 , G21F9/22

6. 发明专利

JPS6053893A STRUCTURE OF FUEL STORAGE POOL 失效
公开(公告)号：JPS6053893A
公开(公告)日：1985-03-27
申请号：JP16046083
申请日：1983-09-02
申请人： HITACHI LTD
发明人： TAKAHASHI TOSHIYORI , OKINO YASUYUKI , OOTA KAZUE
IPC分类号： G21D1/00

7. 发明专利

JPS6021491A STORAGE FACILITY FOR USED FUEL 失效
公开(公告)号：JPS6021491A
公开(公告)日：1985-02-02
申请号：JP12987583
申请日：1983-07-15
申请人： HITACHI LTD , HITACHI SERVICE ENG
发明人： YAMAMOTO MASARU , FUJIMOTO KOUJI , OKINO YASUYUKI , MATSUMOTO TAKASHI , NAKAMURA YUTAKA
IPC分类号： G21C19/07 , G21C19/06

8. 发明专利

JPS59166834A Leakage detecting and leakage preventing device of lining tank 失效
标题翻译：泄漏检测和泄漏防止衬管装置
公开(公告)号：JPS59166834A
公开(公告)日：1984-09-20
申请号：JP4075683
申请日：1983-03-14
申请人： Hitachi Ltd
发明人： OKINO YASUYUKI
IPC分类号： G21C17/02 , B65D90/50 , G01M3/04
CPC分类号： B65D90/501
摘要： PURPOSE:To form an inexpensive lining tank provided with a leakage preventing function, too, by forming a leakage detecting groove provided on a lining plate and a foundation material as a seal structure by welding or an adhesive, and also attaching a water feed pipe to the upper end part of the leakage detecting groove. CONSTITUTION:A steel plate 3 is attached by welding to a concrete wall 1 forming a part of a building through a foundation material 2 provided with a leakage detecting groove. The foundation material 2 is seal-welded to the steel plate 3 so as to form a seal structure with the concrete side. A water feed pipe 4 fitted into the leakage detecting groove of a suitable place is provided on the upper part of a lining tank, and an air vent pipe 5 provided with a plug is attached to other leakage detecting groove for the purpose of an air vent, etc. In case of the lining tank of this structure, when a drain is detected from a leakage detecting pipe 6 of the lower part, first of all, a dry air is made to flow from the leakage detecting pipe 6, and drying in the leakage detecting pipe 6 or a leakage detecting groove 21 is executed, by which whether a dewdrop water leaks from the lining steel plate 3 or not is judged.
摘要翻译：目的：为了形成具有防漏功能的便宜的衬里槽，通过利用焊接或粘合剂形成设置在衬板和基材上的泄漏检测槽作为密封结构，并且还将供水管连接到泄漏检测槽的上端部分。构成：通过焊接将钢板3通过设置有泄漏检测槽的基础材料2附接到形成建筑物的一部分的混凝土壁1。将基础材料2密封焊接到钢板3上，以形成具有混凝土侧的密封结构。在衬套箱的上部设有装配在合适位置的泄漏检测槽中的给水管4，并且设置有塞子的排气管5附接到另一泄漏检测槽，用于排气口在这种结构的衬里箱的情况下，当从下部的泄漏检测管6检测到排水口时，首先使干燥空气从泄漏检测管6流出，并且在执行泄漏检测管6或泄漏检测槽21，判定露珠水是否从衬里钢板3泄漏。

9. 发明专利

JPS5749888A Pool gate washer making method 失效
标题翻译：池式洗衣机制作方法
公开(公告)号：JPS5749888A
公开(公告)日：1982-03-24
申请号：JP12461280
申请日：1980-09-10
申请人： Hitachi Ltd
发明人： OKINO YASUYUKI
IPC分类号： G21C19/07 , G21C19/32

10. 发明专利

JPS576393A CONTROL ROD STRAGE RACK STRUCTURE 失效
公开(公告)号：JPS576393A
公开(公告)日：1982-01-13
申请号：JP7900480
申请日：1980-06-13
申请人： HITACHI LTD
发明人： OKINO YASUYUKI , KAWASAKI HIROBUMI
IPC分类号： G21F9/36 , G21C17/00 , G21C19/06 , G21C19/07 , G21F9/00 , G21F9/34

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