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1. 发明专利

DE3112186A1 未知
公开(公告)号：DE3112186A1
公开(公告)日：1982-01-28
申请号：DE3112186
申请日：1981-03-27
申请人： HITACHI LTD
发明人： TOCHIKUBO HIROO , KANAI AKIRA
IPC分类号： C30B1/02 , C30B29/06 , H01L21/20
摘要： Herein disclosed is a method of fabricating a thick single-crystalline silicon film at a low temperature less than 1000 DEG C. The method is characterized in that, simultaneously as silicon polycrystals are grown on a substrate to form polycrystalline silicon, said polycrystals are irradiated and annealed with a laser or electron beam so that said polycrystalline silicon is single-crystallized to fabricate a single-crystalline silicon film.

2. 发明专利

JPH01256119A HEAT-TREATING EQUIPMENT 失效
公开(公告)号：JPH01256119A
公开(公告)日：1989-10-12
申请号：JP8438988
申请日：1988-04-06
申请人： HITACHI LTD , NIPPON TOKYO ELECTRON KK
发明人： TOCHIKUBO HIROO , TATEFURU NOBORU , INABA KEIZO , MASUYAMA SHIGEJI , HAYAKAWA JUNICHI
IPC分类号： H01L21/22
摘要： PURPOSE:To increase throughput, and prevent the generation of thermal stress dislocation, by containing, in an inner cylinder, a jig retaining a plurality of objects to be treated, constituting them so as to be carried in a processing chamber and carried out therefrom in a state where the almost whole part is enclosed, and providing the hollow part of the inner cylinder with a gas supplying channel to compulsorily circulate the gas. CONSTITUTION:A wafer group 6 and a boat 7 retaining it are carried into a process tube 1 and carried out therefrom, in the state where they are enclosed by an inner cylinder 12. When objects 6 to be treated are carried in a processing chamber 6 and carried out therefrom, the inner cylinder 12 covering the the objects 6 to be treated and a jig 7 for the objects to be treated is firstly heated and cooled by radiating heat from the processing chamber. After the inner cylinder 12 is wholly and uniformly heated, the objects 6 to be treated are heated and colled. As a result, the temperature distribution difference in the objects to be treated becomes small, so that thermal stress dislocation defect failures and the deformation of the objects 6 to be processed are restrained.

3. 发明专利

JPS6314273B2 失效
公开(公告)号：JPS6314273B2
公开(公告)日：1988-03-30
申请号：JP7139880
申请日：1980-05-30
申请人： HITACHI LTD
发明人： KANAI AKIRA , TOCHIKUBO HIROO
IPC分类号： F26B21/14

4. 发明专利

JPS62249488A COMPOUND SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS62249488A
公开(公告)日：1987-10-30
申请号：JP9200486
申请日：1986-04-23
申请人： HITACHI LTD
发明人： SAIDA HIROJI , SHIMAZAKI RYUICHI , TOCHIKUBO HIROO , SHIMIZU SHUICHI , KUDO SUMIHISA
IPC分类号： H01L29/812 , H01L21/338 , H01L29/20 , H01L29/80
摘要： PURPOSE:To improve FET characteristics such as mutual conductance by employing an undoped semi-insulating substrate which does not contain impurity for insulation as a semi-insulating substrate. CONSTITUTION:An undoped semi-insulating substrate which is not doped with impurity for insulation such as Cr is employed as a semi-insulatin GaAs substrate 5. This semi-insulating GaAs substrate 5 is formed by a liquid enclosed Czochralski (LEC) method and shows high quality such as low etching pit density. Moreover, a buffer layer 6, an active layer 7 and an ohmic contact layer 7 which are formed on the main surface of the semi-insulating GaAs substrate 5 successively are formed by an organic metal epitaxial growth (MOOCVD) method respectively with uniform quality. Therefore, the thickness of the buffer layer 6 is so selected as to be thicker than the thickness at which the electron mobility in the aotive layer 7 starts declining suddenly and thinner than the thickness at which the leakage current in the buffer layer 6 appears or starts increasing suddenly.

5. 发明专利

JPS62122276A MANUFACTURE OF COMPOUND SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS62122276A
公开(公告)日：1987-06-03
申请号：JP26112885
申请日：1985-11-22
申请人： HITACHI LTD
发明人： INABA KEIZO , TOCHIKUBO HIROO , SHIMIZU SHUICHI , KANAI AKIRA
IPC分类号： H01L21/205 , H01L21/338 , H01L29/80 , H01L29/812
摘要： PURPOSE:To obtain the manufacturing method of a GaAs FFT characterized by no dispersion in threshold voltage VTH and source-drain current IDSS, by forming an active layer having a required thickness on a substrate, and partially forming a high-concentration semiconductor layer, which is ohmic-contacted with source and drain electrodes, on the active layer by a selective epitaxial method. CONSTITUTION:On one main surface of a GaAs substrate 1, a gate electrode G comprising metal, which forms a Schottky barrier, and source and drain electrodes comprising metal, which is ohmic-contacted with the substrate so as to hold the gate in-between, are formed. In this manufacturing method of GaAs FET, an n-type active layer 3 having a required thickness is formed on the GaAs substrate 1. A high-concentration n type layer 9, which is ohmic- contacted with the source and drain electrodes, is partially formed on the active layer by a selective epitaxial method. Thus the gate electrode G is formed on the n-type active layer 3, which has a substantially recessed shape. Thus the width of the active layer directly beneath the gate can be controlled, and dispersion in VTH and the like can be reduced.

6. 发明专利

JPS5878438A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5878438A
公开(公告)日：1983-05-12
申请号：JP18131282
申请日：1982-10-18
申请人： HITACHI LTD
发明人： NOMURA MASATAKA , NISHIDA SUMIO , TOCHIKUBO HIROO
IPC分类号： H01L21/205 , H01L21/762 , H01L27/12
摘要： PURPOSE:To remove the stress of a polycrystal silicon layer requiring thickness, through which handling is facilitated, and to prevent the warpage of a base body by positioning an insulating film made of SiO2 into the polycrystal silicon layer. CONSTITUTION:An N type vapor growth layer 32 is formed to the main surface of an N type single crystal silicon substrate 31 having low resistance through a vapor growth method, and a film 33 made of a selectively oxidizable substance is shaped to one part of the surface of the N type vapor growth layer 32. Isolation layers 34 made of SiO2 are formed through oxidation treatment as using the film 33 as a mask while an N type silicon region 32a isolated by the isolation layers 34 is shaped. The film 33 is removed through etching, and an oxide film 35 made of SiO2 is molded to the whole surface of the main surface of the semiconductor substrate containing the N type vapor growth layer 32 exposed and the isolation layer 34. The polycrystal silicon layer 36a is formed to the whole surface of the oxide film 35, and an insulating film 37a made of SiO2 and further the polycrystal silicon layer 36b, an insulating film 37b made of SiO2 and the polycrystal silicon layer 36c are alternately stacked and shaped onto the polycrystal silicon layer 36a. The whole is removed in parallel through mechanical polishing and chemical etching processing.

7. 发明专利

JPS589584B2 失效
公开(公告)号：JPS589584B2
公开(公告)日：1983-02-22
申请号：JP590474
申请日：1974-01-11
申请人： HITACHI LTD
发明人： NOMURA MASATAKA , NISHIDA SUMIO , TOCHIKUBO HIROO
IPC分类号： H01L29/78 , H01L21/762 , H01L21/86 , H01L29/786

8. 发明专利

JPS5650508A MANUFACTURE MONOCRYSTALLING SEMICONDUCTOR SUBSTRATE AND ITS 失效
公开(公告)号：JPS5650508A
公开(公告)日：1981-05-07
申请号：JP12539579
申请日：1979-10-01
申请人： HITACHI LTD
发明人： KANAI AKIRA , TOCHIKUBO HIROO , KASE YUUSHI
IPC分类号： H01L21/205
摘要： PURPOSE:To obtain a semiconductor substrate having extremely scanty density of carbon, oxygen and having no generation of swirl defect by a method wherein a monocrystalline semiconductor substrate is formed only with an epitaxial growth layer. CONSTITUTION:An epitaxial growth layer 3 is formed on the main face of a monocrystalline semiconductor plane material 1, and the material 1 is removed to manufacture a monocrystalline semiconductor substrate 4 consisting of only the epitaxial growth layer 3. Accordingly, a monocrystalline semiconductor substrate having extremely scanty density of carbon, oxygen and having no generation of swirl defect can be obtained.

9. 发明专利

JPS55140798A SINGLE CRYSTAL MANUFACTURING DEVICE 失效
公开(公告)号：JPS55140798A
公开(公告)日：1980-11-04
申请号：JP4903479
申请日：1979-04-23
申请人： HITACHI LTD
发明人： SUGITA YOSHIMITSU , YASUDA SADAO , KASE YUUSHI , TOCHIKUBO HIROO
IPC分类号： C30B15/00 , C30B27/02 , H01L21/18 , H01L21/208
摘要： PURPOSE:To shorten the time required to manufacture a single crystal and enhance the quality of the crystal by monitoring the concn., grain size, etc. of SiO powder in a furnace and controlling the vol. of inert gas to be fed into the furnace in accordance with the monitored values to reduce the number of repulling times. CONSTITUTION:Seed crystal 9 is attached to chuck portion 8 of pulling shaft 3, and after dipping the bottom of crystal 9 in silicon melt 10 crystal 9 is slowly pulled to manufacture single crystal 11. In this process the concn. and grain size of SiO powder in exhaust gas are monitored, and crystal 11 is manufactured while maintaining the concn. and grain size lower than set values at all times. When the concn. is higher or the grain size is larger, in accordance with the detected values of dust monitor 14 flow rate controller 16 is controlled with control device 15 to feed much Ar gas into furnace 1, thereby quickly exhausting SiO powder and SiO vapor from furnace 1. When the concn. of SiO powder is lower and the grain size is smaller, the vol. of Ar gas fed is reduced.

10. 发明专利

JPH01123411A METHOD AND APPARATUS FOR VAPOR GROWTH 失效
公开(公告)号：JPH01123411A
公开(公告)日：1989-05-16
申请号：JP28076187
申请日：1987-11-06
申请人： HITACHI LTD
发明人： TOCHIKUBO HIROO , KANAI AKIRA , SAIDA HIROJI
IPC分类号： H01L21/205 , H01L21/263
摘要： PURPOSE:To prevent inclusion of carbon into a crystal and to perform the vapor growth of a crystal having excellent mobility, by feeding excited H2 gas into a reaction region during vapor growth reaction, and making a methyl group to react with stable methane. CONSTITUTION:During vapor growth reaction, excited hydrogen gas is fed into a reaction region from a hydrogen feeding device 11. Ultraviolet rays are projected on the hydrogen gas, which is a carrier gas, from an ultraviolet- ray lamp 18, and carrier gas is excited. Raw material gas 25 is made to join with the excited carrier gas, and the raw material gas 25 is supplied to a wafer with the excited carrier gas. Then, a methyl group is made to react with stable methane by the hydrogen molecules in the excited state. Thus inclusion of carbon into a crystal is prevented, and the vapor growth of the crystal having excellent mobility is performed.

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