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1. 发明专利

DE3272274D1 PHASE-LOCKED SEMICONDUCTOR LASER DEVICE 未知
公开(公告)号：DE3272274D1
公开(公告)日：1986-09-04
申请号：DE3272274
申请日：1982-04-22
申请人： HITACHI LTD
发明人： NAKASHIMA HISAO , UMEDA JUN-ICHI , MATSUDA HIROSHI , KURODA TAKAO , KAJIMURA TAKASHI
IPC分类号： H01S5/00 , H01S5/042 , H01S5/22 , H01S5/227 , H01S5/40 , H01S3/19
摘要： A phase-locked semiconductor laser device comprising a laminated structure in which a plurality of first semiconductor layers having the substantially same composition are stacked in a manner to be sandwiched between second semiconductor layers having a band gap wider, and a refractive index lower, than those of said first semiconductor layers; a third semiconductor layer which is disposed in contact with at least one of side faces of said laminated structure parallel to a traveling direction of a laser beam, which is not narrower in the band gap and not higher in the refractive index than said first semiconductor layers and which does not have the same conductivity type as, at least, that of said first semiconductor layers; means to inject current into an interface between said first semiconductor layers and said third semiconductor layer disposed on the side face of said laminated structure; and means to act as an optical resonator for the laser beam.

2. 发明专利

DE3174308D1 SEMICONDUCTOR LASER DEVICE 未知
公开(公告)号：DE3174308D1
公开(公告)日：1986-05-15
申请号：DE3174308
申请日：1981-07-23
申请人： HITACHI LTD
发明人： YAMASHITA SHIGEO , MATSUDA HIROSHI , KOBAYASHI UICHIRO , KOBAYASHI MASAYOSHI , NAKASHIMA HISAO
IPC分类号： H01S5/00 , H01S5/227 , H01S3/19

3. 发明专利

CA1150810A SEMICONDUCTOR LASER DEVICE 未知
公开(公告)号：CA1150810A
公开(公告)日：1983-07-26
申请号：CA381881
申请日：1981-07-16
申请人： HITACHI LTD
发明人： YAMASHITA SHIGEO , MATSUDA HIROSHI , KOBAYASHI UICHIROO , KOBAYASHI MASAYOSHI , NAKASHIMA HISAO
IPC分类号： H01S5/00 , H01S5/227 , H01S3/19
摘要： : This invention consists in improvements in a buriedheterostructure laser having a buried optical guide. The invention facilitates oscillation of the laser in the fundamenetal mode and also enhances the production of the laser. An active layer and an optical guide layer are sandwiched between two cladding layers to form an optical confinement region. The width of the semiconductor material assembly varies in the direction of the stacked layers, and the narrowest part thereof is located on the side of the active layer opposite the optical guide layer. The side surface of this assembly which is parallel to the direction of laser radiation is buried by a burying layer.

4. 发明专利

CA1150811A PHASE-LOCKED SEMICONDUCTOR LASER DEVICE 未知
公开(公告)号：CA1150811A
公开(公告)日：1983-07-26
申请号：CA401507
申请日：1982-04-22
申请人： HITACHI LTD
发明人： NAKASHIMA HISAO , UMEDA JUN-ICHI , KURODA TAKAO , KAJIMURA TAKASHI , MATSUDA HIROSHI
IPC分类号： H01S5/00 , H01S5/042 , H01S5/22 , H01S5/227 , H01S5/40 , H01S3/19 , H01S3/10
摘要： : A phase-locked semiconductor laser device has a laminated structure in which a plurality of first semiconductor layers having substantially the same composition are so stacked as to be sandwiched between second semiconductor layers having a band gap wider and a refractive index lower than the first semiconductor layer. A third semiconductor layer is disposed in contact with at least one side face of the laminated structure parallel to the traveling direction of a laser beam. The third layer is not narrower in band gap and not higher in refractive index than the first semiconductor layers and does not have the same conductivity type as at least the first semiconductor layers. Current is injected into an interface between the first semiconductor layers and the third semiconductor layer on the side face of the laminated structure. An optical resonator for the laser beam is also provided. Laser beams from the plurality of active regions will have a coherency of wavelength and phase, and a high optical output.

5. 发明专利

DE3277353D1 PHOTODIODE 未知
公开(公告)号：DE3277353D1
公开(公告)日：1987-10-22
申请号：DE3277353
申请日：1982-10-01
申请人： HITACHI LTD
发明人： OUCHI HIROBUMI , MATSUDA HIROSHI , MORIOKA MAKOTO , KAWATA MASAHIKO , KURATA KAZUHIRO , KOGA YASUSHI
IPC分类号： H01L31/00 , H01L31/107 , H01L31/10
摘要： Disclosed is a photo-detective semiconductor device having, on a predetermined semiconductor substrate (11), at least a first semiconductor layer (13) which exhibits a first conductivity type, a second semiconductor layer (14) which is disposed on said first semiconductor layer (13), which has a forbidden band gap greater than that of said first semiconductor layer (13) and which exhibits the first conductivity type, a p-n junction which is formed by a region (16) disposed in said second semiconductor layer (14) and exhibiting a second conductivity type and a third semiconductor layer (15) which is disposed on said second semiconductor layer (14), which exhibits the first conductivity type and which has a surface protective function. The third semiconductor layer (15) is usually made of a group III-V compound semiconductor of a quarternary system. A photosensitive detective semiconductor device of low dark current can thus be provided.

6. 发明专利

JP2001248870A AIR SHOWER SYSTEM 失效
公开(公告)号：JP2001248870A
公开(公告)日：2001-09-14
申请号：JP2000068599
申请日：2000-03-08
申请人： HITACHI LTD , HITACHI TECHNO ENG
发明人： MURAO TOMORU , MATSUDA HIROSHI , YADA YOICHI
IPC分类号： F24F7/06 , B01L1/00
摘要： PROBLEM TO BE SOLVED: To perform automatic operation corresponding to the condition of a worker who enters or exists an air shower system. SOLUTION: The entry into the air shower system is prohibited since all units may be occupied by workers when there are many entrants per unit time using a sensor that is provided near the entrance/exit of the air shower system or in the air shower unit. When the entrants per unit time is less, an entrance door is maintained to be in automatic state, thus judging the condition of the entrants and performing operation control according to the condition.

7. 发明专利

JPH08178388A AIR SHOWERING APPARATUS 失效
公开(公告)号：JPH08178388A
公开(公告)日：1996-07-12
申请号：JP31654394
申请日：1994-12-20
申请人： HITACHI LTD , HITACHI TECHNO ENG
发明人： KURAMITSU EIJI , MATSUDA HIROSHI
IPC分类号： F24F9/00
摘要： PURPOSE: To obtain an air showering apparatus which is ideal for the shortening of entry and departure time in an air shower set up in a food industry field. CONSTITUTION: In this air showering apparatus 1, a front room side door AD1 and a working room side door AD2 provided in an air showering chamber 2 between a working room and a front room have a mutual interlocking mechanism adapted to open only one of the doors during the action of a cleaning jet current and an operation mode is provided to allow the opening of the doors AD1 and AD2 simultaneously in departure from the door AD2 to enter the front side door AD1 via the air showering chamber 2.

8. 发明专利

JPH0668778A EARTH LEAKAGE BREAKER 失效
公开(公告)号：JPH0668778A
公开(公告)日：1994-03-11
申请号：JP14457293
申请日：1993-06-16
申请人： HITACHI LTD , HITACHI TECHNO ENG
发明人： MATSUDA HIROSHI , SHIMANO TERUMI
IPC分类号： H01H83/02
摘要： PURPOSE:To realize downsizing, improve workability in installing parts and reliability in insulation by arranging an overcurrent detecting part and an overcurrent tripping device above an installing member, and arranging a zero-phase converter between the installing member and the bottom part of a cage body. CONSTITUTION:An oil dash pot relay part 14 as an overcurrent detecting part and an overcurrent tripping device are installed in an interpolar insulating stand 20 as an installing member, and are housed in a cage body composed of a case 1, a mold cover and a reverse cover. Since the insulating stand 20 is installed in the cage body separately at a prescribed interval from the bottom part of the cage body so as to be mountable and demountable freely, a zero-phase converter 13 can be installed easily in the cage body. Since a relay part 14 and a device 19 are arranged above the insulating stand 20 and the converter 13 is arranged between the insulating stand 20 and the bottom part of the cage body, heat generated by an electric current flowing in the relay part 14 is conducted to the upper side of the cage body, so that it can be prevented from conducting to the the converter 13 side. Thereby, degradation caused by heat of insulating coating of connecting wires passing penetratingly through the converter 13 can be prevented.

9. 发明专利

JPH03112176A MANUFACTURE OF SEMICONDUCTOR LIGHT-RECEIVING ELEMENT 失效
公开(公告)号：JPH03112176A
公开(公告)日：1991-05-13
申请号：JP24913089
申请日：1989-09-27
申请人： HITACHI LTD
发明人： NAGATSUMA KAZUYUKI , ITO KAZUHIRO , MATSUDA HIROSHI , FUJIWARA ICHIRO
IPC分类号： H01L31/107
摘要： PURPOSE:To enable a guard ring to be formed easily, light amplification function to be induced, and improve yield by firstly forming a step-type junction at a shallow position by thermal diffusion and then clearly specifying a needed traveling distance when moving the junction to a deep position by heat treatment. CONSTITUTION:After forming a step-type junction at an n-type semiconductor by introducing a p-type impurities by thermal diffusion, a film which is different from a body material crystal is clad to at least one part of a p-type impurities introducing region, press diffusion is performed by heat treatment for forming a gradient type junction, and the press diffusion distance is set to 2mum or longer in a semiconductor light-receiving element in guard ring junction. In the element obtained by the method according to this configuration, the amplification rate becomes 20 when a withstand voltage difference is 5V or lower, thus achieving a large light sensitivity at the peripheral part and a small one at the center part, a wide sensitivity is achieved where it is nearly equal both at the peripheral part and the center part when it is equal to 5V, and the light sensitivity at the central main junction part becomes fully large when it is equal to 30 or higher, thus fully restricting the light sensitivity at the guard ring part.

10. 发明专利

JPH0393282A SEMICONDUCTOR LIGHT RECEIVING DEVICE 失效
公开(公告)号：JPH0393282A
公开(公告)日：1991-04-18
申请号：JP22914889
申请日：1989-09-06
申请人： HITACHI LTD
发明人： ITO KAZUHIRO , NAGATSUMA KAZUYUKI , MATSUDA HIROSHI , FUJIWARA ICHIRO
IPC分类号： H01L31/107
摘要： PURPOSE:To realize precision measurement of amplification factor of an avalanche photo diode by a method wherein at least two PN junctions comprising a layer with a large forbideen band gap and a layer with a small forbidden band gap are provided in a crystal independently of each other while distance between the layer with a small band gap and the PN junction front and integration value of carrier concentration are made differ. CONSTITUTION:On an N-type InP substrate 9 with impurities concentration of 10 /cm , an N-type InP buffer layer 10 with concentration of 10 , an N-type InGaAs light absorbing layer 11 with concentration of 10 , an N-type InP field buffering layer 12 with concentration of 10 and an N-type InP window layer 13 with concentration of 10 are laminated and grown. Then a double protective film 8 composed of SiN and SiO2 is adhered to the surface of the window layer 13 so as to remove the film 8 in a circle corresponding to a diode 3 forming part, where Zn is diffused to form junction. Then a circular film 8 removed part is also provided on a diode forming part 2 distant from the above position, and Zn is again diffused here to form PN junction. At this time depth of the diode 3 part is 6.2mum and depth of the part 2 is 5mum to eliminate variability in measurement.

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