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    • 2. 发明专利
    • Uninterruptible power supply device
    • JP2004159405A
    • 2004-06-03
    • JP2002321363
    • 2002-11-05
    • Hitachi Ltd株式会社日立製作所
    • KURITA KAZUAKIADACHI TAKUYA
    • H02J9/06
    • PROBLEM TO BE SOLVED: To provide a technology for lengthening a time for backup and reducing man-hours for maintenance in an interruptible power supply device. SOLUTION: In the interruptible power supply device, a secondary battery and an electric double layer capacitor are used as energy accumulation means; circuits each connected in series with a reverse-flow prevention element such as a diode are connected to each other in parallel; and, during the discharge voltage of the electric double layer capacitor is higher than the discharge voltage of the secondary battery when the power of an AC power supply is lowered, the power of the electric double layer capacitor is fed to a load side by turning on the reverse-flow prevention element at the electric double layer capacitor side, and when the discharge voltage of the electric double layer capacitor is lowered to be lower than the discharge voltage of the secondary battery, the power of the secondary battery is fed to the load side by turning on the reverse-flow prevention element at the secondary battery side. COPYRIGHT: (C)2004,JPO
    • 4. 发明专利
    • POWER SUPPLY CONTROL CIRCUIT
    • JPH10322904A
    • 1998-12-04
    • JP13067697
    • 1997-05-21
    • HITACHI LTD
    • ADACHI TAKUYABABA TSUNEO
    • H02J1/00H03K19/00
    • PROBLEM TO BE SOLVED: To prevent the generation of latching-up so as to be capable of applying power supply voltage at the same timing as ICs. SOLUTION: A P-channel MOS transistor 4 is connected to a 5-V voltage supply connection terminal 1, and the P-channel MOS transistor 4 is kept OFF until the voltage of a 3.3-V voltage supply connection terminal 2 has risen, so that no 5-V voltage is applied to the power supply terminals of CMOS IC7 and CMOS IC8. When the voltage of the 3.3-V voltage supply connection terminal 2 rises, 3.3-V voltage is applied to the power supply terminals of CMOS IC9 and CMOS IC10. At the same time, 3.3-V is applied to the base of an N- channel bipolar transistor 6, so that the N-channel bipolar transistor 6 is turned on, and 5-V voltage is applied to the power supply terminals of the CMOS IC7 and CMOS IC8. Therefore, at the same time, a power supply voltage is applied to the power supply terminals of CMOS IC7, CMOS IC8, CMOS IC9, and CMOS IC10.
    • 5. 发明专利
    • Method for preventing corrosion of system for concentrating liquid radioactive waste
    • 防止液体放射性废物浓缩系统腐蚀的方法
    • JPS60190583A
    • 1985-09-28
    • JP4395584
    • 1984-03-09
    • Hitachi Ltd
    • ITOU KAZUTOSHISUZUKI KATSUMISUZUKI MAMORUMINATO AKIRAADACHI TAKUYA
    • C23F11/12C23F11/10C23F11/167C23F13/00
    • C23F11/10
    • PURPOSE:To produce a significant corrosion preventing effect even at the rear side of a member, a gapped part and a part contacting with a flow by combining corrosion inhibiting method using an org. compound having a carboxyl group, etc. and showing its effect under flowing conditions with an electrolytic protection method showing its effect in static water. CONSTITUTION:A corrosion inhibitor consisting of an org. compound having a carboxyl group and phosphonic acid or water soluble salts of them is prepd. The corrosion inhibitor showing its effect under flowing conditions is added to liquid radioactive waste with high electric conductivity and high corrosiveness discharged from a nuclear power plant, and an electrolytic protection method showing its effect in static water is applied at the same time.
    • 目的:通过组合使用腐蚀抑制方法,即使在构件的后侧,间隙部分和与流动接触的部分也产生显着的防腐蚀效果。 具有羧基的化合物等,并且在流动条件下显示其在静电水中显示其作用的电解保护方法的效果。 构成:腐蚀抑制剂由组织 制备具有羧基和膦酸的化合物或它们的水溶性盐。 在流动条件下显示其效果的腐蚀抑制剂被添加到从核电厂排出的高导电性和高腐蚀性的液体放射性废物中,并且同时施加显示其在静态水中的效果的电解保护方法。