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1. 发明专利

JP2015007263A 有機デバイス製造装置および有機デバイスの製造方法审中-公开
标题翻译：有机装置制造装置及有机装置制造方法
公开(公告)号：JP2015007263A
公开(公告)日：2015-01-15
申请号：JP2013131842
申请日：2013-06-24
申请人：株式会社日立ハイテクノロジーズ , Hitachi High-Technologies Corp
发明人： KUSUNOKI TOSHIAKI , MIYAKE TATSUYA , YAMAMOTO KENICHI
IPC分类号： C23C14/06 , C23C14/56 , H01L51/50 , H05B33/10 , H05B33/26
摘要：【課題】有機層を形成した大面積の基板に、厚い上部電極を成膜する場合、有機層に対する低ダメージと高速成膜を両立することが課題である。【解決手段】有機デバイス製造装置は、有機層上に金属蒸着膜を成膜できる蒸着装置と、金属蒸着膜上に成膜できるスパッタリング装置と、を備え、スパッタリング装置は、バランス型マグネトロンを有する複数のカソードを備え、複数のカソードは、基板面と平行に等間隔をおいて配置される。スパッタリング装置内で形成される複数の磁場が、基板中央に垂直な軸に対して概ね対称に、かつカソードが連なる方向に結合されるのが好ましい。【選択図】図24
摘要翻译：要解决的问题：当在形成有机层的大面积基板上沉积厚的上电极时，实现有机层上的低损伤和高速膜沉积。解决方案：有机器件制造装置包括能够在有机层上沉积金属蒸镀膜的蒸镀装置以及能够在金属蒸镀膜上析出膜的溅射装置。溅射装置包括具有平衡型磁控管的多个阴极。多个阴极以与衬底面平行的相同间隔布置。优选地，形成在溅射装置中的多个磁场以与垂直于基板的中心的轴几乎对称的方向耦合，并且阴极彼此连通。

2. 发明专利

JP2014181387A Evaporation source, and vacuum vapor deposition apparatus using the evaporation source 审中-公开
标题翻译：蒸发源和真空蒸发沉积装置使用蒸发源
公开(公告)号：JP2014181387A
公开(公告)日：2014-09-29
申请号：JP2013057011
申请日：2013-03-19
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： MATSUURA HIROYASU , MINEKAWA HIDEAKI , OGATA TOMOHIKO , MIYAKE TATSUYA , YAZAKI AKIO , IZAKI MAKOTO
IPC分类号： C23C14/24
摘要： PROBLEM TO BE SOLVED: To provide an evaporation source and a vacuum vapor deposition apparatus which are capable of increasing the degree of freedom in layout of a nozzle and a lid, or capable of preventing nozzle clogging caused by a vapor deposition material or fixation of the lid being a supply port of the vapor deposition material even in high-rate vapor deposition.SOLUTION: An evaporation source has: a crucible equipped with an opening used for inputting a vapor deposition material into a holding part which holds the vapor deposition material inside, a lid for closing the opening, a nozzle from which the vapor deposition material is discharged for a vapor deposition target, and a housing holding the lid and the nozzle; and heating means for heating the crucible. The heating means performs local heating to the crucible, by which a region having higher temperature than temperature at which the vapor deposition material condenses is formed in a region in the crucible closer to the nozzle, and a region having lower temperature than temperature at which the vapor deposition material condenses is formed in a region farther than the region having higher temperature from the nozzle, and the evaporation source has condensation means for condensing the vapor deposition material in the region having lower temperature.
摘要翻译：要解决的问题：提供一种蒸发源和真空蒸镀装置，其能够增加喷嘴和盖的布局的自由度，或者能够防止由气相沉积材料引起的喷嘴堵塞或固定即使在高倍率气相沉积中，盖也是气相沉积材料的供应口。解决方案：蒸发源具有：坩埚，其具有用于将气相沉积材料输入到保持气相沉积材料的保持部分的开口，用于封闭所述开口的盖，从所述气相沉积材料排出气相沉积靶的喷嘴和保持所述盖和所述喷嘴的壳体; 以及用于加热坩埚的加热装置。加热装置对坩埚进行局部加热，通过该坩埚，在坩埚中靠近喷嘴的区域中形成温度高于气相沉积材料凝结的温度的区域，并且具有比温度低的区域气相沉积材料冷凝物形成在比来自喷嘴的温度较高的区域更远的区域中，并且蒸发源具有用于在较低温度的区域中冷凝气相沉积材料的冷凝装置。

3. 发明专利

JP2014152365A Vacuum evaporation system 审中-公开
标题翻译：真空蒸发系统
公开(公告)号：JP2014152365A
公开(公告)日：2014-08-25
申请号：JP2013024175
申请日：2013-02-12
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： TAMAKOSHI TAKESHI , KUSUNOKI TOSHIAKI , YAMAMOTO KENICHI , MIYAKE TATSUYA , MATSUURA HIROYASU , MATSUZAKI EIJI , YAZAKI AKIO , OGATA TOMOHIKO
IPC分类号： C23C14/24 , H01L51/50 , H05B33/10
摘要： PROBLEM TO BE SOLVED: To provide a vacuum evaporation system capable of depositing without lowering film thickness uniformity between substrates, even when depositing continuously on a plurality of substrates for a long time.SOLUTION: A vacuum evaporation system includes a crucible for storing a vapor deposition material to be vapor-deposited on a substrate 2, and also includes an evaporation source 3 for emitting vapor of the vapor deposition material, a calculation part 7 for determining the amount of the vapor deposition material in the crucible, and a control part 8 for controlling distribution of the vapor deposition material arriving at the substrate 2 based on the amount of the vapor deposition material in the crucible.
摘要翻译：要解决的问题：即使在长时间连续沉积在多个基板上的情况下，也能够提供能够沉积而不降低基板之间的膜厚度均匀性的真空蒸发系统。解决方案：真空蒸发系统包括用于存储气相沉积要沉积在基片2上的材料，还包括用于发射蒸气沉积材料的蒸气的蒸发源3，用于确定坩埚中气相沉积材料的量的计算部分7以及用于基于坩埚中的蒸镀材料的量控制到达基板2的蒸镀材料的分布。

4. 发明专利

JP2014015637A Vapor deposition apparatus 审中-公开
标题翻译：蒸气沉积装置
公开(公告)号：JP2014015637A
公开(公告)日：2014-01-30
申请号：JP2012152093
申请日：2012-07-06
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： YAMAMOTO KENICHI , KUSUNOKI TOSHIAKI , MIYAKE TATSUYA , TAMAKOSHI TAKESHI
IPC分类号： C23C14/24 , H01L51/50 , H05B33/10
摘要： PROBLEM TO BE SOLVED: To provide a vapor deposition apparatus that prevents damage to an organic film and the like due to temperature rising, prevents contamination in a vacuum chamber, and facilitates maintenance by preventing an alignment gap between a substrate and a mask due to radiant heat from an evaporation source.SOLUTION: The vapor deposition apparatus is provided with a cooling member 6 including a tubular cooling part 12 and a mask proximity cooling plate 13, and an angle regulating plate 7. The cooling member is provided with an opening 5 that is wider than a vapor deposition particle scattering area from the angle regulating plate 7. The cooling member and the angle regulating plate 7 scan the substrate 3 and the mask 4 while being in synchronization with the evaporation source 2.
摘要翻译：要解决的问题：提供一种防止由于温度升高而损坏有机膜等的气相沉积设备，防止真空室中的污染，并且通过防止由于辐射而导致的基板和掩模之间的对准间隙，便于维护来自蒸发源的热量。解决方案：蒸镀装置设置有冷却部件6，冷却部件6包括管状冷却部件12和掩模接近冷却板13以及角度调节板7.冷却部件设置有开口5，比来自角度调节板7的气相沉积颗粒散射区域宽。冷却构件和角度调节板7同时与蒸发源2同步地扫描基板3和掩模4。

5. 发明专利

JP2012214835A Vapor deposition apparatus 有权
标题翻译：蒸气沉积装置
公开(公告)号：JP2012214835A
公开(公告)日：2012-11-08
申请号：JP2011079947
申请日：2011-03-31
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： YAMAMOTO KENICHI , MIYAKE TATSUYA , TAMAKOSHI TAKESHI , MATSUURA HIROYASU , MINEKAWA HIDEAKI , YAZAKI AKIO , KUSUNOKI TOSHIAKI , OGATA TOMOHIKO
IPC分类号： C23C14/24 , H01L51/50 , H05B33/10
摘要： PROBLEM TO BE SOLVED: To provide a vapor deposition apparatus at low cost having an evaporation source that prevents overflow of Al or entrance of Al steam to hardly brake.SOLUTION: The vapor deposition apparatus includes an evaporation source unit 26 in a vacuum chamber. The evaporation source unit 26 includes: a crucible 1 accommodating an evaporation material 5; a nozzle 2 attached to an opening of the crucible 1; a heater chamber 10 surrounding the crucible 1 and accommodating a heater 3; and a fixture 7. The apparatus includes a notch 12 for preventing the evaporation material 5 having melted in the crucible 1 or steam of the evaporation material 5 from entering the heater chamber 10, between an inner wall of the crucible 1 and the heater chamber 10.
摘要翻译：要解决的问题：提供一种低成本的具有防止Al溢出或Al蒸汽进入难以制动的蒸发源的蒸镀装置。解决方案：气相沉积设备在真空室中包括蒸发源单元26。蒸发源单元26包括：容纳蒸发材料5的坩埚1; 连接到坩埚1的开口的喷嘴2; 围绕坩埚1并容纳加热器3的加热室10; 该装置包括用于防止在坩埚1中熔化的蒸发材料5或蒸发材料5的蒸汽进入加热室10，坩埚1的内壁和加热器室10之间的切口12 。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2012117114A Vapor deposition apparatus 有权
标题翻译：蒸气沉积装置
公开(公告)号：JP2012117114A
公开(公告)日：2012-06-21
申请号：JP2010268331
申请日：2010-12-01
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： YAMAMOTO KENICHI , MIYAKE TATSUYA , TAMAKOSHI TAKESHI , KUSUNOKI TOSHIAKI , MATSUURA HIROYASU , MINEKAWA HIDEAKI , YAZAKI AKIO
IPC分类号： C23C14/24 , H01L51/50 , H05B33/10
摘要： PROBLEM TO BE SOLVED: To realize a vacuum vapor deposition apparatus which can achieve a uniform vapor-deposited film thickness distribution and an improved evaporant utilization efficiency, does not give a thermal damage to the vapor-deposited film formed on a substrate, and can prevent nozzle plugging.SOLUTION: A plurality of evaporation source units 31 having a plurality of nozzles 4 arranged in a first direction are arranged in the width direction to thereby form an evaporation source 3. First reflection/scattering plates 5 and second reflection/scattering plates 6 are arranged so as to pinch an evaporant emitted from the evaporation source 3 between a pair of their respective plates from the left and right sides at the exits of nozzles 4. The first reflection/scattering plates 5, which are nearer to the evaporation source 3, are heated by a heating means, whereas the second reflection/scattering plates 6, which are far from the evaporation source 3 and nearer to a substrate, do not have a heating means but have a cooling means. In this way, it becomes possible to realize a uniform vapor-deposited film thickness distribution on the substrate, to increase the evaporant utilization efficiency, to suppress the thermal damage to the evaporant formed on the substrate, and to prevent the buildup of the evaporant near the vapor deposition nozzles.
摘要翻译：要解决的问题为了实现能够实现均匀的气相沉积膜厚度分布和改善的蒸发器利用效率的真空蒸镀装置，不会对形成在基板上的气相沉积膜造成热损伤，并可防止喷嘴堵塞。解决方案：沿宽度方向布置多个具有沿第一方向布置的喷嘴4的蒸发源单元31，从而形成蒸发源3.第一反射/散射板5和第二反射/散射板6 被布置为在喷嘴4的出口处从左侧和右侧将从蒸发源3发射的蒸发器夹在一对它们各自的板之间。第一反射/散射板5更接近蒸发源3 被加热装置加热，而远离蒸发源3并且更靠近基板的第二反射/散射板6不具有加热装置，而是具有冷却装置。以这种方式，可以在基板上实现均匀的气相沉积膜厚度分布，以提高蒸发器的利用效率，以抑制对基板上形成的蒸发剂的热损伤，并且防止蒸发剂的积聚附近气相沉积喷嘴。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2012012633A Film deposition system 有权
标题翻译：电影沉积系统
公开(公告)号：JP2012012633A
公开(公告)日：2012-01-19
申请号：JP2010147918
申请日：2010-06-29
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： KUSUNOKI TOSHIAKI , MIYAKE TATSUYA , YAMAMOTO KENICHI , TAMAKOSHI TAKESHI
IPC分类号： C23C14/34
摘要： PROBLEM TO BE SOLVED: To provide a sputtering apparatus which enables coexistence of low damage and high speed film deposition even though the apparatus has the same size as before.SOLUTION: Magnetron plasma 20 is confined in a movable shield electrode 13 which is open to the target material 11 side and has a slit for passing sputtering particles in a closing plane in the substrate side. The movable shield electrode 13 and a magnetron 17 are simultaneously scanned to perform film deposition which hardly causes damage to a lower layer film, and then only the magnetron 17 is scanned to perform high speed film deposition by the magnetron plasma. This allows film deposition which hardly causes damage to a lower layer film and is high in speed.
摘要翻译：要解决的问题：提供即使该装置具有与之前相同尺寸的能够共存低损伤和高速成膜的溅射装置。解决方案：磁控管等离子体20被限制在对目标材料11侧开放的可移动屏蔽电极13中，并且具有用于使溅射颗粒在基板侧的封闭平面中通过的狭缝。可移动屏蔽电极13和磁控管17被同时扫描以进行几乎不会对下层膜造成损害的膜沉积，然后只有磁控管17被扫描以通过磁控管等离子体进行高速膜沉积。这允许几乎不会对下层膜造成损伤并且速度高的成膜沉积。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2014198863A 蒸発源及び真空蒸着装置及び有機ＥＬ表示装置の製造方法审中-公开
标题翻译：蒸气源，真空蒸发器沉积装置和生产有机EL显示装置的方法
公开(公告)号：JP2014198863A
公开(公告)日：2014-10-23
申请号：JP2013074060
申请日：2013-03-29
申请人：株式会社日立ハイテクノロジーズ , Hitachi High-Technologies Corp
发明人： MIYAKE TATSUYA , MATSUURA HIROYASU , MINEKAWA HIDEAKI , OGATA TOMOHIKO , YAMAMOTO KENICHI , KUSUNOKI TOSHIAKI , TAMAKOSHI TAKESHI
IPC分类号： C23C14/24 , H01L51/50 , H05B33/10
摘要：【課題】大型基板上に膜厚が均一で有機EL上部電極用の金属薄膜を高速に成膜させ、蒸気漏れやノズルの温度低下を低減し、長時間連続運転可能な蒸発源及び真空蒸着装置を提供する。【解決手段】ノズル3−4aは、ルツボ3−2aの内壁に入れ子となるように内壁に接するスリーブ部22を有し、当該スリーブ部22の先端に突きだした口ばし状のノズル孔3−5aを備えるノズル部を有する。ノズル3−4aの特にスリーブ部22は、ルツボの材質と同程度か、少し大きい熱膨張係数をもつ材質を用いており、蒸着時、蒸発源の温度を上げることにより、ルツボ3−2aの内側にあるノズル3−4aがルツボ3−2aに対して膨張し、蒸気漏れの低減が可能となる。【選択図】図2
摘要翻译：要解决的问题：为了提供在大基板上高速形成具有均匀膜厚的有机EL上电极用金属薄膜的蒸气源和真空蒸镀装置，可减少蒸气泄漏和温度降低喷嘴并允许长时间的连续操作。解决方案：喷嘴3-4a具有套筒部分22，其与内壁接触，以便成为坩埚3-2a的内壁中的嵌套，并且喷嘴部分设置有从套筒部22的尖端突出的喙状喷嘴孔3-5a。喷嘴3-4a的至少套筒部22由具有与或不同于坩埚的材料。当蒸气源的温度在气相沉积中升高时，存在于坩埚3-2a内的喷嘴3-4a扩展到坩埚3-2a，防止蒸汽泄漏。

9. 发明专利

JP2014107037A Vapor deposition device and evaporation source for use therein 审中-公开
标题翻译：蒸气沉积装置和蒸发源用于其中
公开(公告)号：JP2014107037A
公开(公告)日：2014-06-09
申请号：JP2012257046
申请日：2012-11-26
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： YAMAMOTO KENICHI , KUSUNOKI TOSHIAKI , TAMAKOSHI TAKESHI , MIYAKE TATSUYA , MATSUURA HIROYASU , MATSUZAKI EIJI , YAZAKI AKIO , OGATA TOMOHIKO
IPC分类号： H05B33/10 , C23C14/24 , H01L51/50 , H05B33/26
摘要： PROBLEM TO BE SOLVED: To stabilize temperature of a vapor deposition material liquid while preventing backflow of a vapor deposition material gas to a solid material supply section, in an evaporation source of a vapor deposition device having a material supply section, and to stabilize long time operation by preventing variation in the vapor deposition rate, and contamination and clogging of the material supply section due to the gas.SOLUTION: In a vapor deposition device including a vacuum chamber, an evaporation source built in the vacuum chamber, the evaporation source includes a material supply section for supplying a solid vapor deposition material, a heating source for heating the vapor deposition material, a melting section for melting the vapor deposition material to liquid, and an evaporation section for evaporating the liquid to generate gas. The vapor deposition device has a configuration for discharging the gas from the evaporation section, and depositing the vapor deposition material on a substrate introduced into the vacuum chamber, a backflow preventing section is provided between the melting section and the evaporation section, and the backflow preventing section has a configuration for sealing the flow path of the gas with the liquid.
摘要翻译：要解决的问题：为了稳定气相沉积材料液体的温度，同时防止气相沉积材料气体向固体材料供应部分回流，在具有材料供应部分的气相沉积装置的蒸发源中，并且稳定长时间通过防止气相沉积速率的变化以及由于气体导致的材料供应部分的污染和堵塞的操作。解决方案：在包括真空室的蒸镀装置中，内置在真空室中的蒸发源包括：用于提供固体气相沉积材料的材料供应部分，用于加热气相沉积材料的加热源，用于将气相沉积材料熔化成液体的熔化部分，以及用于蒸发液体以产生气体的蒸发部分。蒸镀装置具有从蒸发部排出气体的结构，在引入真空室的基板上沉积蒸镀材料，在熔融部与蒸发部之间设置防回流部，防回流截面具有用于密封气体与液体的流动路径的构造。

10. 发明专利

JP2013237915A Evaporation source and vacuum vapor deposition apparatus 审中-公开
标题翻译：蒸发源和真空蒸发沉积装置
公开(公告)号：JP2013237915A
公开(公告)日：2013-11-28
申请号：JP2012112948
申请日：2012-05-17
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： OGATA TOMOHIKO , MATSUURA HIROYASU , YAZAKI AKIO , MINEKAWA HIDEAKI , MIYAKE TATSUYA , TAMAKOSHI TAKESHI
IPC分类号： C23C14/24 , H01L51/50 , H05B33/10
摘要： PROBLEM TO BE SOLVED: To provide an evaporation source that has a linear source for a vacuum vapor deposition apparatus, which is less affected by a change in inner temperature of a crucible and causes a smaller change in evaporation rate even if a relative position between a heater of the linear source and the crucible is changed.SOLUTION: An evaporation source includes: a crucible with a longitudinal direction, including a plurality of nozzles aligned in the longitudinal direction of a surface facing a substrate and a material chamber storing a vapor deposition material therein; a casing for storing the crucible; a heater disposed between the crucible and the casing and extended in the longitudinal direction while having a predetermined width in a direction of a crucible depth; and a heat exchanger plate disposed between the crucible and the heater and having one end that comes into contact with the proximity of the nozzle of the crucible and a part that comes into contact with the crucible at least a point other than the proximity of the nozzle in the direction of the crucible depth.
摘要翻译：要解决的问题：提供一种具有用于真空蒸镀装置的线性源的蒸发源，该蒸发源受坩埚内部温度变化的影响较小，并且即使相对位置线性源和坩埚的加热器被改变。解决方案：蒸发源包括：具有纵向方向的坩埚，包括在面向衬底的表面的纵向方向上排列的多个喷嘴和存储蒸镀材料的材料室其中用于存储坩埚的壳体; 加热器，其设置在所述坩埚和所述壳体之间，并且沿着所述长度方向延伸，同时在坩埚深度方向上具有预定宽度; 以及热交换器板，其设置在所述坩埚和所述加热器之间，并且具有与所述坩埚的喷嘴附近接触的一端和与所述坩埚接触的至少一个点以外的点在坩埚深度的方向。

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