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1. 发明专利

JP2005276996A Flat display device manufacturing method 审中-公开
标题翻译：平面显示设备制造方法
公开(公告)号：JP2005276996A
公开(公告)日：2005-10-06
申请号：JP2004086508
申请日：2004-03-24
申请人： Hitachi Displays Ltd , Hitachi Ltd , 株式会社日立ディスプレイズ , 株式会社日立製作所
发明人： YAZAKI AKIO , HONGO MIKIO , HATANO MUTSUKO , KIMURA TAIICHI , TAKASAKI YUKIO
IPC分类号： H01L51/50 , G09F9/30 , H01L21/20 , H01L21/336 , H01L29/786 , H05B33/14
摘要： PROBLEM TO BE SOLVED: To reduce the number of alignment mark processing step during the formation of an active layer of a silicon film in a crystalline state, which is necessary for various circuits, on an insulating substrate that constitutes a flat display device, and thereby to achieve a high throughput and a low cost.
SOLUTION: An L-pattern 20 is formed on a photomask 17, and pattern matching is performed using the L-pattern 20 and a straight line or a nearly straight line (side) around a pseudo monocrystal region 11 on a substrate. At this time, the photomask 17 is driven relative to three axes XYθ together with the substrate so that the distance ΔX between the side 22 of the L-pattern 20, and the side 24 of the pseudo mnocrystal region 11 becomes equal to the distance ΔY between the side 23 of the L-pattern 20 and the side 25 of the pseudo monocrystal region 11, thus making the photomask and the substrate coincide with each other.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题为了减少在构成平面显示装置的绝缘基板上形成在各种电路所必需的结晶状态的硅膜的有源层的对准标记处理步骤的数量，从而达到高产量和低成本。解决方案：在光掩模17上形成L图案20，并且使用L图案20和在基板上的伪单晶区域11周围的直线或近似直线（侧）进行图案匹配。此时，光掩模17相对于三轴XYθ与基板一起被驱动，使得L图案20的侧面22与伪晶体区域11的侧面24之间的距离ΔX变得等于距离ΔY 在L图案20的侧面23和伪单晶区域11的侧面25之间，从而使得光掩模和基板彼此一致。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2005217214A Method for manufacturing semiconductor thin film and image display device 审中-公开
标题翻译：制造半导体薄膜和图像显示装置的方法
公开(公告)号：JP2005217214A
公开(公告)日：2005-08-11
申请号：JP2004022473
申请日：2004-01-30
申请人： Hitachi Displays Ltd , Hitachi Ltd , 株式会社日立ディスプレイズ , 株式会社日立製作所
发明人： HATANO MUTSUKO , HONGO MIKIO , YAZAKI AKIO , TAI MITSUHARU , NODA TAKASHI , TAKASAKI YUKIO
IPC分类号： G02F1/1368 , C30B1/06 , G02F1/133 , H01L21/20 , H01L21/268 , H01L21/324 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786
CPC分类号： H01L21/2026 , C30B1/06 , H01L27/12 , H01L27/1285 , H01L29/04
摘要： PROBLEM TO BE SOLVED: To provide a high quality and homogeneous semiconductor thin film for reducing the roughness of a film and crystal defect in a film to be generated in the process of crystallization. SOLUTION: This method for manufacturing a semiconductor thin film is provided to carry out laser irradiation of the arbitrary region of a semiconductor thin film formed on a substrate by scanning a laser beam or the substrate to form an almost band-shaped crystal crystallized so that crystal particles can be grown in the scanning direction. On X/Y coordinates where the value x of the beam diameter W(μm) of the laser beam measured in a direction which is almost the same as the scanning direction is defined as an X axis, and the value y of a scanning speed Vs(m/s) is defined as a Y axis, the crystallization processing is carried out in the region where the beam diameter W is larger than the wavelength of the laser beam (condition 1), the scanning speed Vs is smaller than the upper limit of the crystal growing speed (condition 2), and x×(1/y) COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供用于降低膜的粗糙度和在结晶过程中产生的膜中的晶体缺陷的高品质且均匀的半导体薄膜。解决方案：提供这种制造半导体薄膜的方法，通过扫描激光束或基板来对形成在基板上的半导体薄膜的任意区域进行激光照射，以形成结晶化的大致带状晶体使得晶体颗粒可以沿扫描方向生长。在X / Y坐标上，将在与扫描方向几乎相同的方向上测量的激光束的光束直径W（μm）的值x定义为X轴，扫描速度Vs的值y （m / s）被定义为Y轴，结晶处理在光束直径W大于激光束的波长的区域（条件1）中进行，扫描速度Vs小于上限的晶体生长速度（条件2），x×（1 / y）<25μs都满足（条件3）。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2004253599A Pannel type display device, and method and device for manufacturing it 有权
公开(公告)号：JP2004253599A
公开(公告)日：2004-09-09
申请号：JP2003042148
申请日：2003-02-20
申请人： Hitachi Displays Ltd , Hitachi Ltd , 株式会社日立ディスプレイズ , 株式会社日立製作所
发明人： HONGO MIKIO , YAZAKI AKIO , HATANO MUTSUKO , SAITO YUTAKA , OKURA OSAMU
IPC分类号： G02F1/1368 , G09F9/30 , H01L21/20 , H01L21/268 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786 , H01L51/50 , H05B33/14
CPC分类号： H01L21/2026 , H01L21/268 , H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/78675
摘要： PROBLEM TO BE SOLVED: To provide a display device for realizing a property required for each thin film transistor in a pixel region and a peripheral circuit region to realize a high quality on-screen picture image, and to provide a method and device for manufacturing it. SOLUTION: A uniform micro polycrystal silicon film 103 for forming a pixel region is formed on the whole insulation substrate 100 on which an amorphous silicon film is formed by scanning to irradiate a solid state pulse laser formed in a linear or a rectangular shape, and peripheral circuit regions 105, 106, 107 including drive circuits as a polycrystal silicon film with their crystal grown in the scanning direction are further formed by scanning to irradiate a linearly formed and time modulated continuously oscillating solid state laser 104 on the circumference of the pixel region. One substrate of the panel type display device is manufactured by forming a pixel part thin film transistor to the film 103, and a driving circuit or an interface circuit to the regions 105, 106, 107. COPYRIGHT: (C)2004,JPO&NCIPI

4. 发明专利

JP2005277062A Method for manufacturing semiconductor thin film 有权
标题翻译：制造半导体薄膜的方法
公开(公告)号：JP2005277062A
公开(公告)日：2005-10-06
申请号：JP2004087493
申请日：2004-03-24
申请人： Hitachi Displays Ltd , Hitachi Ltd , 株式会社日立ディスプレイズ , 株式会社日立製作所
发明人： HATANO MUTSUKO , YAMAGUCHI SHINYA , HONGO MIKIO , YAZAKI AKIO , NODA TAKASHI
IPC分类号： G02F1/1368 , H01L21/20 , H01L21/336 , H01L21/66 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786
CPC分类号： H01L21/2026 , H01L22/12 , H01L27/1214 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor thin film, including a highly sensitive inspection method, and to provide a crystallization method for lateral crystallization. SOLUTION: The pulse width of the time base of a laser SXL is modulated, and an almost band-shaped crystal silicon film SPSI is formed in a desired region, while a substrate SUB1 is scanned backward and forward in an X direction and -X direction. An inspection light PRO1 is emitted so that inspection can be carried out, immediately after a laser SXL has been turned off. A silicon film, where the laser SXL is turned off, is formed with a protrusion TOKI when the silicon film is lateral crystallization SPSI, and the inspection light PRO1 is scattered by the protrusion TOKI, and observed by a detector (not shown). When the silicon film is granular crystal GGSI or an aggregated film AGSI, the inspection light PRO1 is not observed. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种包括高灵敏度检测方法的半导体薄膜的制造方法，并提供横向结晶的结晶方法。解决方案：激光器SXL的时基的脉冲宽度被调制，并且在期望的区域中形成几乎带状的晶体硅膜SPSI，同时衬底SUB1沿X方向向后和向前扫描， -X方向。发出检查灯PRO1，以便在激光SXL关闭后立即进行检查。当硅膜是横向结晶SPSI时，形成有激光SXL被切断的硅膜，并且检测光PRO1被突起TOKI散射，并由检测器（未示出）观测。当硅膜是粒状晶体GGSI或聚集膜AGSI时，未观察到检查光PRO1。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2005276600A Manufacturing method of organic electroluminescent display device 审中-公开
标题翻译：有机电致发光显示装置的制造方法
公开(公告)号：JP2005276600A
公开(公告)日：2005-10-06
申请号：JP2004087527
申请日：2004-03-24
申请人： Hitachi Displays Ltd , Hitachi Ltd , 株式会社日立ディスプレイズ , 株式会社日立製作所
发明人： TAMURA TAKUO , HONGO MIKIO , OKUNAKA MASAAKI , KATO SHINICHI , MATSUZAKI EIJI , ITO MASAHITO , TERAKADO MASAMICHI
IPC分类号： H05B33/10 , G09F9/30 , H01J9/00 , H01L51/50 , H05B33/12 , H05B33/14 , H05B33/22 , H05B33/26
CPC分类号： H01L51/56 , H01L2251/568
摘要： PROBLEM TO BE SOLVED: To efficiently manufacture an organic EL display device superior in display performance.
SOLUTION: In the case one pixel of the organic EL display device having an organic light emitting layer 240 between a first electrode 230 and a second electrode 250 is not lighted, the organic light emitting layer 240 of that pixel is observed from the first electrode layer side. As a result, if a foreign material 300 is contained in the organic light emitting layer 240 of that pixel, the second electrode 250 is separated into a contact region 250a with the foreign material 300 and a region 250b which is contacted with neither that region 250a nor the foreign material 300.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了有效地制造显示性能优异的有机EL显示装置。解决方案：在具有在第一电极230和第二电极250之间的有机发光层240的有机EL显示装置的一个像素没有点亮的情况下，从该像素的有机发光层240观察该像素的有机发光层240 第一电极层侧。结果，如果异物300被包含在该像素的有机发光层240中，则第二电极250被分离成与异物300的接触区域250a和与该区域250a不接触的区域250b （C）2006，JPO＆NCIPI

6. 发明专利

JP2005217210A Device for manufacturing flat panel display unit 有权
标题翻译：用于制造平板显示单元的装置
公开(公告)号：JP2005217210A
公开(公告)日：2005-08-11
申请号：JP2004022444
申请日：2004-01-30
申请人： Hitachi Displays Ltd , Hitachi Ltd , 株式会社日立ディスプレイズ , 株式会社日立製作所
发明人： YAZAKI AKIO , HONGO MIKIO , HATANO MUTSUKO , NODA TAKASHI
IPC分类号： G02F1/1345 , B23K26/00 , B23K26/06 , B23K26/073 , B23K26/42 , G02F1/136 , G02F1/1368 , G09G3/36 , G09G3/38 , H01L21/00 , H01L21/20 , H01L21/268 , H01L21/324 , H01L21/336 , H01L21/84 , H01L29/786
CPC分类号： B23K26/073 , B23K26/702 , H01L27/14625
摘要： PROBLEM TO BE SOLVED: To safely form a silicon thin film having uniform crystallinity on an insulating substrate 20 configuring the display panel of a flat panel display unit. SOLUTION: This device for manufacturing a plane display device configured of a thin film transistor formed by irradiating a silicon film formed on an insulating film with a laser beam to improve film quality is provided with a mechanism which always measures distribution of the spacial strength of a laser beam 3 and deviation in collimation. When an incident laser beam 3 made incident to a laser beam shaping optical element 15 deviates from predetermined conditions, a measured signal is processed, and the beam shape, beam diameter and incident position of the laser beam to be made incident to the laser beam shaping optical element can be always held under predetermined conditions by a spatial filter inserted into the focal position of the lens configuring a beam expander 5 arranged in the optical axis based on the processing result. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：在构成平板显示单元的显示面板的绝缘基板20上安全地形成具有均匀结晶性的硅薄膜。解决方案：用于制造由通过用形成在绝缘膜上形成的硅膜用激光束照射以提高膜质量而形成的薄膜晶体管构成的平面显示装置的装置具有总是测量空间分布的机构激光束3的强度和准直偏差。当入射到激光束整形光学元件15的入射激光束3偏离预定条件时，处理测量信号，并且激光束的光束形状，光束直径和入射位置入射到激光束成形通过基于处理结果，通过插入到配置在光轴上的光束扩展器5的透镜的焦点位置的空间滤光片，光学元件总能保持在预定条件下。版权所有（C）2005，JPO＆NCIPI

7. 发明专利

JP2005175237A Manufacturing method of thin film semiconductor device 审中-公开
标题翻译：薄膜半导体器件的制造方法
公开(公告)号：JP2005175237A
公开(公告)日：2005-06-30
申请号：JP2003414108
申请日：2003-12-12
申请人： Hitachi Displays Ltd , Hitachi Ltd , 株式会社日立ディスプレイズ , 株式会社日立製作所
发明人： YAMAGUCHI SHINYA , HATANO MUTSUKO , SATO TAKESHI , HONGO MIKIO , YAZAKI AKIO
IPC分类号： H01L21/20 , H01L21/265 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide the manufacturing method of a thin film transistor device by which an ion concentration in a silicon layer which becomes a cause for a variable factor of element characteristics of a thin film transistor is detected with sufficient precision to stabilize the characteristics.
SOLUTION: In the manufacturing method, a high crystalline region with little defect is locally formed on a low crystalline silicon layer with much defects, and a probe is brought into contact with an inside of the high crystalline region to measure sheet resistance, then an ion implant dose is adjusted from the ion concentration thus obtained.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种薄膜晶体管器件的制造方法，通过该方法，以足够的精度检测成为薄膜晶体管的元件特性的可变因子的原因的硅层中的离子浓度稳定特点。解决方案：在制造方法中，在具有很多缺陷的低结晶硅层上局部形成缺陷少的高结晶区域，并且使探针与高结晶区域的内部接触以测量薄层电阻，然后从由此获得的离子浓度调节离子注入剂量。版权所有（C）2005，JPO＆NCIPI

8. 发明专利

JP2005217213A Laser annealing method and laser annealer 有权
标题翻译：激光退火方法和激光雷达
公开(公告)号：JP2005217213A
公开(公告)日：2005-08-11
申请号：JP2004022461
申请日：2004-01-30
申请人： Hitachi Displays Ltd , Hitachi Ltd , 株式会社日立ディスプレイズ , 株式会社日立製作所
发明人： HONGO MIKIO , YAZAKI AKIO , HATANO MUTSUKO
IPC分类号： H01L21/20 , B23K26/073 , B23K26/08 , G02B27/09 , G02F1/13 , H01L21/268 , H01L21/77
CPC分类号： B23K26/0738 , B23K26/0853 , G02B27/0927 , G02B27/0966 , H01L21/2026 , H01L27/1285 , H01L27/1296
摘要： PROBLEM TO BE SOLVED: To anneal a semiconductor film by scanning a substrate with a time modulated continuous oscillation laser beam shaped into an elongated shape at a high velocity without rotating the substrate. SOLUTION: A laser beam subjected to time modulation by a modulator 7 and shaped into an elongated shape by a beam shaper 10 is rotated about the optical axis of an image rotator 13 inserted between the beam shaper and the substrate thus rotating the longitudinal direction of the elongated laser beam about the optical axis on a substrate 15. At the time of annealing in the plurality of directions on the substrate 15, the laser beam shaped into an elongated shape is rotated on the substrate and a stage mounting the substrate moves only in the two directions, i.e. XY directions. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：通过在不旋转衬底的情况下以高速度形成为细长形状的时间调制连续振荡激光束扫描衬底来对半导体膜进行退火。解决方案：通过调光器7进行时间调制并通过光束整形器10成形为细长形状的激光束围绕插入光束整形器和衬底之间的图像旋转器13的光轴旋转，从而旋转纵向在基板15上的光轴周围的细长激光束的方向。在基板15上的多个方向退火时，成形为细长形状的激光束在基板上旋转，并且安装基板的台架移动只在两个方向，即XY方向。版权所有（C）2005，JPO＆NCIPI

9. 发明专利

JP2005217209A Laser annealing method and laser annealer 审中-公开
标题翻译：激光退火方法和激光雷达
公开(公告)号：JP2005217209A
公开(公告)日：2005-08-11
申请号：JP2004022433
申请日：2004-01-30
申请人： Hitachi Displays Ltd , Hitachi Ltd , 株式会社日立ディスプレイズ , 株式会社日立製作所
发明人： HONGO MIKIO , YAZAKI AKIO , HATANO MUTSUKO , NODA TAKASHI , TAKASAKI YUKIO
IPC分类号： H01L21/324 , B23K26/073 , C30B13/24 , C30B29/06 , H01L21/20 , H01L21/268 , H01L29/04 , H01L29/786
CPC分类号： C30B13/24 , B23K26/0738 , C30B29/06 , H01L21/2026 , H01L29/04 , H01L29/78675
摘要： PROBLEM TO BE SOLVED: To obtain a laser annealing method and a laser annealer for annealing a semiconductor film by scanning it with a laser beam shaped into an elongated shape in which energy loss is reduced in a beam shaper for shaping the beam into an elongated shape, and the beam dimension and the scanning velocity are selected to attain lateral growth crystal stably with high throughput without being affected by variation in energy.
SOLUTION: A laser beam 3 subjected to time modulation by a modulator 7 is shaped into an elongated beam by means of a beam shaper 10. The beam shaper 10 sets the dimension in the scanning direction of the elongated beam in the range of 2-10 micron, more preferably in the range of 2-4 micron, the scanning velocity in the range of 300-1,000 mm/s, more preferably in the range of 500-1,000 mm/s. Consequently, energy efficiency is enhanced while retarding damage on the silicon thin film and a lateral growth crystal (stripe crystal) region is attained with high throughput by scanning a predetermined region on the substrate with a laser beam.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了获得激光退火方法和激光退火炉，用于通过用形成为波束成形器中的能量损失减小的细长形状的激光束扫描半导体膜，以将光束成形为选择细长形状，并且选择光束尺寸和扫描速度，以在不受能量变化影响的情况下以高生产率稳定地获得横向生长晶体。解决方案：通过调光器7进行时间调制的激光束3通过光束整形器10成形为细长的光束。光束整形器10将细长光束的扫描方向上的尺寸设定在 2-10微米，更优选在2-4微米范围内，扫描速度在300-1,000毫米/秒范围内，更优选在500-1,000毫米/秒的范围内。因此，通过用激光束扫描基板上的预定区域，能够提高能量效率，同时以高生产率来延缓硅薄膜上的损伤和横向生长晶体（条纹晶体）区域。版权所有（C）2005，JPO＆NCIPI

10. 发明专利

JP2005099427A Display panel manufacturing method and display panel 有权
标题翻译：显示面板制造方法和显示面板
公开(公告)号：JP2005099427A
公开(公告)日：2005-04-14
申请号：JP2003333090
申请日：2003-09-25
申请人： Hitachi Displays Ltd , Hitachi Ltd , 株式会社日立ディスプレイズ , 株式会社日立製作所
发明人： YAZAKI AKIO , HONGO MIKIO , HATANO MUTSUKO , SAITO YUTAKA , OKURA OSAMU
IPC分类号： G02F1/1368 , B23K26/06 , B23K26/073 , G09F9/30 , H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786
CPC分类号： H01L27/1229 , B23K26/032 , B23K26/064 , B23K26/0648 , B23K26/0652 , B23K26/066 , B23K26/0665 , B23K26/0732 , H01L21/2026 , H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： PROBLEM TO BE SOLVED: To form a silicon film in a crystallinity complying with the performance required for various kinds of circuits at high throughput, on an insulation substrate constituting a display panel. SOLUTION: An amorphous silicon film on the insulation substrate 50 to be the separate display panel of the large-sized insulation substrate 10 is irradiated with a linearly concentrated constant wave (CW) solid state laser light 40, while performing the scanning at a constant velocity in the width direction S of the concentrated light, in which a pixel part 51 and peripheral circuit parts 52, 53, and 54 in the same insulation substrate are irradiated with the power density to be into the prescribed crystallinities, by performing the time modulation of the laser light, and are modified into the crystalline silicon film complying with the performance required for the thin film transistor circuits fabricated in the pixel part 51 and the peripheral circuits parts 52, 53, and 54. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：在构成显示面板的绝缘基板上，以高产量形成符合各种电路所需的性能的结晶度的硅膜。解决方案：在绝缘基板50上作为大尺寸绝缘基板10的分开的显示面板的非晶硅膜用线性集中恒定（CW）固态激光40照射，同时在通过执行将功率密度照射到规定结晶度的同一绝缘基板中的像素部51和外围电路部52,53,54的集中光的宽度方向S上的恒定速度，激光的时间调制，并且被修改成符合在像素部分51和外围电路部分52,53和54中制造的薄膜晶体管电路所需的性能的结晶硅膜。版权所有（ C）2005，JPO＆NCIPI

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