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1. 发明专利

JP2009132965A Copper alloy material for electrical and electronic parts 有权
标题翻译：铜合金材料电气和电子部件
公开(公告)号：JP2009132965A
公开(公告)日：2009-06-18
申请号：JP2007309651
申请日：2007-11-30
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： YAMAMOTO YOSHINORI , HAGIWARA NOBORU , FUYU KEIHEI
IPC分类号： C22C9/00 , C22F1/00 , C22F1/08 , H01B1/02 , H01B5/02
摘要： PROBLEM TO BE SOLVED: To provide a copper alloy material for electrical and electronic parts which combines high electric conductivity, stress relaxation resistance and bendability.
SOLUTION: This alloy material is a Cu-Cr-Zr based copper alloy material for electrical and electronic parts characterized in that: it has an alloy composition consisting of, by mass, 0.1 to 0.4% Cr, 0.02 to 0.2% Zr and the balance Cu with inevitable impurities; orientation distribution density of Brass orientation in the texture of the alloy is ≤20; and the sum of the respective orientation distribution densities of Brass orientation, S orientation and Copper orientation ranges from 10 to 50.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种结合高导电性，耐应力松弛性和弯曲性的电气和电子部件的铜合金材料。解决方案：该合金材料是用于电气和电子部件的Cu-Cr-Zr基铜合金材料，其特征在于：其具有以质量计含有0.1至0.4％的Cr，0.02至0.2％的Zr 余量为Cu与不可避免的杂质; 合金质地中黄铜取向的取向分布密度≤20; 黄铜取向，S取向和铜取向的取向分布密度的总和为10〜50。（C）2009，JPO＆INPIT

2. 发明专利

JP2011110601A Joining material, method of manufacturing joining material and semiconductor device, method of manufacturing semiconductor device 有权
标题翻译：接合材料，制造接合材料和半导体器件的方法，制造半导体器件的方法
公开(公告)号：JP2011110601A
公开(公告)日：2011-06-09
申请号：JP2009271886
申请日：2009-11-30
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： YAMAGUCHI TAKUTO , OKAMOTO MASAHIDE , IKEDA YASUSHI , FUYU KEIHEI , KURODA HIROMITSU , KUROKI KAZUMA
IPC分类号： B23K35/14 , B23K1/00 , B23K20/00 , B23K20/04 , B23K35/28 , B23K101/40 , H01L21/52
CPC分类号： H01L24/27 , H01L24/29 , H01L24/73 , H01L2224/16225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/73265 , H01L2224/83101 , H01L2924/01322 , H01L2924/13055 , H01L2924/351 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To perform the joining of a semiconductor element and a frame or a substrate by using a material in which lead is not used and to secure high reliability. SOLUTION: As the joining material between the semiconductor element and the frame or the substrate, the joining material based on a clad material in which an Al-based alloy layer 102 is held by a Zn-base alloy layers 101 is used. The Zn-Al alloy 103 exists in the clad material, but the ratio of the Zn-Al alloy 103 is taken as ≤40% of the whole. The average crystal grain size of the Zn-alloy layer 101 is 0.85-50 μm. By performing the joining by using such a clad material, the void ratio in the joined part is suppressed to ≤10%. Further, the wettability between the semiconductor and the frame or the substrate is secured. Thus, the high reliability in the joined part is secured. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：通过使用不使用引线的材料来实现半导体元件和框架或基板的接合，并确保高可靠性。解决方案：作为半导体元件与框架或基板之间的接合材料，使用基于Al基合金层102由Zn基合金层101保持的包覆材料的接合材料。 Zn-Al合金103存在于包层材料中，但是Zn-Al合金103的比例为整体的≤40％。 Zn合金层101的平均结晶粒径为0.85〜50μm。通过使用这种包层材料进行接合，将接合部的空隙率抑制为≤10％。此外，确保半导体与框架或基板之间的润湿性。因此，确保了接合部的高可靠性。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2011084796A Cu ALLOY STRIP AND METHOD OF PRODUCING THE SAME 审中-公开
标题翻译：铜合金条及其生产方法
公开(公告)号：JP2011084796A
公开(公告)日：2011-04-28
申请号：JP2009240420
申请日：2009-10-19
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： OKAMOTO MASAHIDE , MURASATO YUKI , FUYU KEIHEI , TONOKI TATSUYA
IPC分类号： C25D5/12 , C25D7/00 , H01R13/03
摘要： PROBLEM TO BE SOLVED: To provide a Cu alloy strip to be used for a connector, having small insertion force and free from the increase of the contact resistance even in use at a high temperature.
SOLUTION: Three layers of Ni2/Cu3/Sn4 are plated on a Cu alloy 1 which is a base material of the Cu alloy strip. After that, a Cu-Sn intermetallic compound layer 5 is formed up to the surface by reflow. Further a Sn4 is plated thin on the surface of the Cu-Sn intermetallic compound layer 5. In such a way, the unevenness on the surface of the formed Cu-Sn intermetallic compound layer 5 is small one of ≤0.5 μm Rmax. The thickness of the Sn layer 4 formed on the surface of Cu-Sn intermetallic compound layer is ≥0.3 μm and ≤0.8 μm. The connecter having small insertion force and free from the increase of the contact resistance even when used at the high temperature is obtained by using the Cu alloy strip for the connecter.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种用于连接器的Cu合金带，具有小的插入力并且即使在高温下也使用也不会增加接触电阻。解决方案：将三层Ni2 / Cu3 / Sn4镀在作为Cu合金条的基材的Cu合金1上。之后，通过回流形成直至表面的Cu-Sn金属间化合物层5。此外，在Cu-Sn金属间化合物层5的表面上还镀Sn4薄膜。以这种方式，形成的Cu-Sn金属间化合物层5的表面上的不均匀度小于0.5μmRmax。在Cu-Sn金属间化合物层的表面上形成的Sn层4的厚度为≥0.3μm，≤0.8μm。通过使用Cu合金带作为连接器，可获得具有小的插入力并且即使在高温下使用也不会增加接触电阻的连接器。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2010118651A Heat sink, multilayer heat sink, and method of manufacturing heat sink 审中-公开
标题翻译：散热器，多层散热器及其制造方法
公开(公告)号：JP2010118651A
公开(公告)日：2010-05-27
申请号：JP2009236855
申请日：2009-10-14
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： KIYOFUJI MASAHIRO , NAKAGAWA KAZUHIKO , FUYU KEIHEI
IPC分类号： H01L23/373 , H01L23/36
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a heat sink and a multilayer heat sink that are capable of enhancing the heat conductivity in a plate thickness direction, and to provide a method of manufacturing the heat sink. SOLUTION: The heat sink 1 includes: a core 10 that has core surfaces and holes 15, the axes 15a of which are directed in a direction along a normal direction of the core surfaces; and heat transfer plates that are joined to the core surfaces and fill the holes 15. COPYRIGHT: (C)2010,JPO&INPIT

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