专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08053908B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08053908B2
公开(公告)日：2011-11-08
申请号：US12694298
申请日：2010-01-27
申请人： Hisashi Tanie , Nobuhiko Chiwata , Motoki Wakano , Takeyuki Itabashi
发明人： Hisashi Tanie , Nobuhiko Chiwata , Motoki Wakano , Takeyuki Itabashi
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L23/49816 , H01L21/563 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L2224/03828 , H01L2224/0401 , H01L2224/11334 , H01L2224/13023 , H01L2224/1308 , H01L2224/13082 , H01L2224/131 , H01L2224/1357 , H01L2224/136 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/181 , H01L2924/30105 , H01L2924/351 , H01L2924/3511 , H01L2224/13099 , H01L2924/00
摘要： A novel structure capable of reducing the stress in the insulating layer in the semiconductor element and thereby securing reliability is provided. When the semiconductor element and the substrate are connected with a solder, the stress generated in the insulating layer is reduced by placing a spherical core made of a material having a greater rigidity inside the solder and satisfying the following inequalities: 1 GPa
摘要翻译：提供了能够减小半导体元件中的绝缘层中的应力并由此确保可靠性的新型结构。当半导体元件和衬底与焊料连接时，通过将由焊料中具有较大刚性的材料制成的球形芯放置在绝缘层中产生的应力减小，并满足以下不等式：1 GPa <（杨氏模量的密封树脂）<30GPa，20ppm / k（包封树脂的线膨胀系数）<200ppm / k，10MPa <（室温下焊料的屈服应力）<30MPa。在连接时，要放置在半导体元件表面上的焊盘与芯之间的焊料的厚度被调节为端子间距的1/10以下。

2. 发明授权

US08368195B2 Semiconductor device including arrangement to control connection height and alignment between a plurity of stacked semiconductor chips 失效
标题翻译：半导体器件包括用于控制堆叠的半导体芯片的纯度的连接高度和对准的布置
公开(公告)号：US08368195B2
公开(公告)日：2013-02-05
申请号：US12652245
申请日：2010-01-05
申请人： Hisashi Tanie , Takeyuki Itabashi , Nobuhiko Chiwata , Motoki Wakano
发明人： Hisashi Tanie , Takeyuki Itabashi , Nobuhiko Chiwata , Motoki Wakano
IPC分类号： H01L23/02
CPC分类号： H01L25/50 , H01L23/481 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/742 , H01L24/81 , H01L25/0657 , H01L2224/03828 , H01L2224/0401 , H01L2224/0557 , H01L2224/05572 , H01L2224/0603 , H01L2224/11334 , H01L2224/11901 , H01L2224/13025 , H01L2224/13099 , H01L2224/131 , H01L2224/136 , H01L2224/1403 , H01L2224/16 , H01L2224/81136 , H01L2224/81194 , H01L2224/81203 , H01L2224/81801 , H01L2225/06513 , H01L2225/06541 , H01L2924/0001 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/00014 , H01L2224/05552
摘要： A semiconductor device having stacked semiconductor chips is provided wherein alignment of even thin semiconductor chips of a large warpage is easy and thus high assembling accuracy and high reliability are ensured. Semiconductor chips having hollow through-silicon via electrodes each formed with a tapered portion are melt-joined using solder balls each having a core of a material higher in melting point than solder. When melt-joining the semiconductor chips, the temperature is raised while imparting an urging load to stacked semiconductor chips, thereby correcting warpage of the semiconductor chips. In each chip-to-chip connection thus formed, if the connection is to prevent the occurrence of stress around the electrode due to the urging load, a solder ball having a core of a smaller diameter than in the other connections is used in the connection.
摘要翻译：提供了具有堆叠半导体芯片的半导体器件，其中易弯曲的大的翘曲的均匀的薄的半导体芯片的对准，从而确保了高的组装精度和高的可靠性。具有各自形成有锥形部分的中空的硅通孔电极的半导体芯片使用具有比焊料熔点高的材料的芯的焊球进行熔融接合。当熔融接合半导体芯片时，温度升高同时对层叠的半导体芯片施加施力载荷，从而校正半导体芯片的翘曲。在如此形成的每个芯片到芯片连接中，如果连接是为了防止由于施加载荷而在电极周围产生应力，则在连接中使用具有直径小于其它连接的芯的焊球。

3. 发明申请

US20100193936A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20100193936A1
公开(公告)日：2010-08-05
申请号：US12694298
申请日：2010-01-27
申请人： Hisashi TANIE , Nobuhiko Chiwata , Motoki Wakano , Takeyuki Itabashi
发明人： Hisashi TANIE , Nobuhiko Chiwata , Motoki Wakano , Takeyuki Itabashi
IPC分类号： H01L23/488 , H01L23/498
CPC分类号： H01L23/49816 , H01L21/563 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L2224/03828 , H01L2224/0401 , H01L2224/11334 , H01L2224/13023 , H01L2224/1308 , H01L2224/13082 , H01L2224/131 , H01L2224/1357 , H01L2224/136 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/181 , H01L2924/30105 , H01L2924/351 , H01L2924/3511 , H01L2224/13099 , H01L2924/00
摘要： A novel structure capable of reducing the stress in the insulating layer in the semiconductor element and thereby securing reliability is provided. When the semiconductor element and the substrate are connected with a solder, the stress generated in the insulating layer is reduced by placing a spherical core made of a material having a greater rigidity inside the solder and satisfying the following inequalities: 1 GPa
摘要翻译：提供了能够减小半导体元件中的绝缘层中的应力并由此确保可靠性的新型结构。当半导体元件和衬底与焊料连接时，通过将由焊料中具有较大刚性的材料制成的球形芯放置在绝缘层中产生的应力减小，并满足以下不等式：1 GPa <（杨氏模量的密封树脂）<30GPa，20ppm / k（包封树脂的线膨胀系数）<200ppm / k，10MPa <（室温下焊料的屈服应力）<30MPa。在连接时，要放置在半导体元件表面上的焊盘与芯之间的焊料的厚度被调节为端子间距的1/10以下。

4. 发明申请

US20100171209A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100171209A1
公开(公告)日：2010-07-08
申请号：US12652245
申请日：2010-01-05
申请人： Hisashi Tanie , Takeyuki Itabashi , Nobuhiko Chiwata , Motoki Wakano
发明人： Hisashi Tanie , Takeyuki Itabashi , Nobuhiko Chiwata , Motoki Wakano
IPC分类号： H01L25/065 , H01L21/98 , H01L23/535
CPC分类号： H01L25/50 , H01L23/481 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/742 , H01L24/81 , H01L25/0657 , H01L2224/03828 , H01L2224/0401 , H01L2224/0557 , H01L2224/05572 , H01L2224/0603 , H01L2224/11334 , H01L2224/11901 , H01L2224/13025 , H01L2224/13099 , H01L2224/131 , H01L2224/136 , H01L2224/1403 , H01L2224/16 , H01L2224/81136 , H01L2224/81194 , H01L2224/81203 , H01L2224/81801 , H01L2225/06513 , H01L2225/06541 , H01L2924/0001 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/00014 , H01L2224/05552
摘要： A semiconductor device having stacked semiconductor chips is provided wherein alignment of even thin semiconductor chips of a large warpage is easy and thus high assembling accuracy and high reliability are ensured. Semiconductor chips having hollow through-silicon via electrodes each formed with a tapered portion are melt-joined using solder balls each having a core of a material higher in melting point than solder. When melt-joining the semiconductor chips, the temperature is raised while imparting an urging load to stacked semiconductor chips, thereby correcting warpage of the semiconductor chips. In each chip-to-chip connection thus formed, if the connection is to prevent the occurrence of stress around the electrode due to the urging load, a solder ball having a core of a smaller diameter than in the other connections is used in the connection.
摘要翻译：提供了具有堆叠半导体芯片的半导体器件，其中易弯曲的大的翘曲的均匀的薄的半导体芯片的对准，从而确保了高的组装精度和高的可靠性。具有各自形成有锥形部分的中空的硅通孔电极的半导体芯片使用具有比焊料熔点高的材料的芯的焊球进行熔融接合。当熔融接合半导体芯片时，温度升高同时对层叠的半导体芯片施加施力载荷，从而校正半导体芯片的翘曲。在如此形成的每个芯片到芯片连接中，如果连接是为了防止由于施加载荷而在电极周围产生应力，则在连接中使用具有直径小于其它连接的芯的焊球。

5. 发明授权

US07901782B2 Solder alloy and glass bonded body using the same 失效
标题翻译：焊接合金和玻璃粘结体使用相同
公开(公告)号：US07901782B2
公开(公告)日：2011-03-08
申请号：US12058369
申请日：2008-03-28
申请人： Nobuhiko Chiwata , Minoru Yamada , Motoki Wakano
发明人： Nobuhiko Chiwata , Minoru Yamada , Motoki Wakano
IPC分类号： B32B17/06 , C22C13/00
CPC分类号： C22C13/00 , C03C27/08 , Y10T428/31678
摘要： The invention provides a solder alloy containing, by mass, 2.0 to 15.0% of Ag, 0.1 to 6.0% of Al, 0.01 to 0.50% of Y, the balance being Sn and unavoidable impurities. The solder alloy preferably contains 0.01 to 0.50% of Ge by mass. The solder alloy of the invention is suited to bonding oxides together and the oxides preferably comprise glass. The invention provides a glass bonded body formed by bonding glasses with the use of the solder alloy.
摘要翻译：本发明提供一种焊料合金，其含有2.0〜15.0％的Ag，0.1〜6.0％的Al，0.01〜0.50％的Y，余量为Sn和不可避免的杂质。焊料合金优选含有0.01〜0.50％的Ge。本发明的焊料合金适用于将氧化物结合在一起，氧化物优选包括玻璃。本发明提供一种通过使用焊料合金粘结玻璃而形成的玻璃粘结体。

6. 发明授权

US07744706B2 Solder alloy for bonding oxide material, and solder joint using the same 失效
标题翻译：用于焊接氧化物材料的焊料，以及使用其的焊接接头
公开(公告)号：US07744706B2
公开(公告)日：2010-06-29
申请号：US12244481
申请日：2008-10-02
申请人： Minoru Yamada , Nobuhiko Chiwata , Takayuki Moriwaki
发明人： Minoru Yamada , Nobuhiko Chiwata , Takayuki Moriwaki
IPC分类号： C22C30/00 , C22C7/00
CPC分类号： C03C27/08 , C04B37/006 , C04B37/026 , C04B2235/96 , C04B2237/12 , C04B2237/34 , C04B2237/343
摘要： The invention provides a solder alloy for bonding an oxide material, including more than 0% but not more than 1.0% of Mg and the balance being substantially Bi and Sn. Preferably, the alloy includes 0.01 to 0.6% of Mg, 35 to 86% of Bi, and the balance being substantially Sn. The invention can be used for bonding an oxide material, such as bonding glasses to each other. According to the invention, a low-cost solder joint of an oxide material is also provided.
摘要翻译：本发明提供了一种焊接合金，其用于粘合氧化物材料，其包括大于0％但不大于1.0％的Mg，余量基本上为Bi和Sn。合金优选含有0.01〜0.6％的Mg，35〜86％的Bi，余量基本上为Sn。本发明可以用于将氧化物质例如粘结玻璃彼此粘合。根据本发明，还提供了一种低成本的氧化物材料焊点。

7. 发明申请

US20090208363A1 SOLDER ALLOY FOR OXIDE BONDING 审中-公开
标题翻译：焊剂合金用于氧化粘结
公开(公告)号：US20090208363A1
公开(公告)日：2009-08-20
申请号：US11994324
申请日：2006-07-13
申请人： Minoru Yamada , Nobuhiko Chiwata
发明人： Minoru Yamada , Nobuhiko Chiwata
IPC分类号： C22C13/00
CPC分类号： C22C13/00 , B23K35/262 , B32B2311/12 , C03C27/046 , C03C27/08 , C04B37/026 , C04B2235/96 , C04B2237/12 , C04B2237/34
摘要： A lead-free metal solder material capable of realizing excellent bonding strength and hermetic sealing is provided. The solder alloy is a solder alloy for bonding to an oxide, and includes 2.0-15.0 mass % of Ag, more than 0.1-6.0 mass % of Al, and the remainder is composed of Sn and some inevitable impurities. The content of Al is preferably 0.3-3.0 mass %, and more preferably 0.5-3.0 mass %. The content of Ag is preferably 3.0-13.0 mass %, more preferably more than 5.0-12.0 mass %, and most preferably 6.0-10.0 mass %. A relation between Ag and Al that fits the inequality 0
摘要翻译：提供能够实现优异的接合强度和密封性的无铅金属焊料。焊料合金是用于与氧化物结合的焊料合金，其含有Al：2.0〜15.0质量％，Al：0.1〜0.1质量％，余量由Sn和不可避免的杂质构成。 Al的含量优选为0.3〜3.0质量％，更优选为0.5〜3.0质量％。 Ag的含量优选为3.0〜13.0质量％，更优选为5.0〜10.0质量％，最优选为6.0〜10.0质量％。满足不等式0 <[（％Ag） - （％Al）x7.8] <10的Ag和Al之间的关系是理想的。用于与本发明的氧化物结合的焊料合金用于例如玻璃之间的接合，并且具有优异的效果。

8. 发明授权

US06911618B1 Method of producing minute metal balls 有权
标题翻译：生产微小金属球的方法
公开(公告)号：US06911618B1
公开(公告)日：2005-06-28
申请号：US10769915
申请日：2004-02-03
申请人： Nobuhiko Chiwata
发明人： Nobuhiko Chiwata
IPC分类号： B23K3/06 , B23K10/00
CPC分类号： B23K3/0623
摘要： An object of the present invention is to provide a producing method by which minute metal balls having a high sphericity or roundness and a uniform diameter.The present invention provides a method of producing minute metal balls, comprising the steps of cutting a wire material having a diameter φ at predetermined distances to provide metal pieces having a cut length L equal to or smaller than 2 mm and a ratio L/φ in a range of 0.1≦L/φ≦3.0, and introducing the metal pieces into a plasma flame to spheroidize the metal pieces.In the present invention, it is preferable that the metal pieces are made of any metal selected from the group consisting of Cu, Ag, Au and Al, or an alloy as a main of any of these metals. It is also preferable that the metal pieces are made of any metal selected from the group consisting of Fe, Ti, W, Ni and Cr, or an alloy as a main of any of these metals.In addition, it is preferable that the metal pieces are introduced into the plasma flame forming a reducing atmosphere; that 1 to 20% by mass of a hydrogen gas is contained in a plasma operating gas for generating the plasma flame; and that RF plasma is used as the plasma flame.
摘要翻译：本发明的目的是提供一种具有高球形度或圆度和均匀直径的微小金属球的制造方法。本发明提供了一种生产微小金属球的方法，包括以下步骤：切割具有预定距离的直径phi的线材，以提供切割长度L等于或小于2mm的金属片和L / phi比 0.1 <= L / phi <= 3.0的范围，并将金属片引入等离子体火焰中以使金属片球化。在本发明中，金属片优选由选自Cu，Ag，Au和Al的任何金属或以这些金属中的任何一种为主要的合金制成。金属片也优选由选自Fe，Ti，W，Ni和Cr中的任何金属制成，或者以这些金属中的任何一种为主要合金。此外，优选将金属片引入形成还原气氛的等离子体火焰中; 在用于产生等离子体火焰的等离子体工作气体中含有1〜20质量％的氢气; 并且使用RF等离子体作为等离子体火焰。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式