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    • 2. 发明申请
    • NONWOVEN FABRIC
    • 无纺布
    • US20120196091A1
    • 2012-08-02
    • US13500152
    • 2010-09-17
    • Satoshi MizutaniHiroki GodaHideyuki IshikawaToru Oba
    • Satoshi MizutaniHiroki GodaHideyuki IshikawaToru Oba
    • D04H13/00
    • A61F13/51104A61F13/51108D04H1/54D04H1/542D04H1/70Y10T428/24603
    • Short fibers of thermoplastic synthetic resin are fusion bonded to one another to form a nonwoven fabric. The nonwoven fabric is formed on its upper surface with crests and troughs extending in parallel to one another. The crests include first crests having a uniform height dimension from a lower surface of the nonwoven fabric and second crests having a uniform height dimension from a lower surface of the nonwoven fabric which is smaller than the height dimension of the first crests. Density of the nonwoven fabric gradually increases in the order of the first crests, the second crests and the troughs. The first crests are formed so that the density of the first crests remains lower than the density of the second crests even when the first crests are compressed toward the lower surface until the first crests becomes flush with the level of the second crests.
    • 热塑性合成树脂的短纤维彼此熔合以形成无纺织物。 无纺布在其上表面上形成有彼此平行延伸的波峰和槽。 顶部包括从无纺织物的下表面具有均匀的高度尺寸的第一顶部和与无纺织物的下表面相比具有小于第一顶部的高度尺寸的均匀的高度尺寸的第二顶部。 无纺布的密度按照第一峰,第二波峰和谷的顺序逐渐增加。 第一峰形成为使得即使当第一波峰被压向下表面时,第一波峰的密度仍保持低于第二波峰的密度,直到第一波峰与第二波峰的高度齐平。
    • 8. 发明申请
    • Semiconductor device and manufacturing method for the same
    • 半导体器件及其制造方法相同
    • US20060011975A1
    • 2006-01-19
    • US11178458
    • 2005-07-12
    • Hisashi YonemotoKazushi NaruseHideyuki IshikawaYasuhiko Okayama
    • Hisashi YonemotoKazushi NaruseHideyuki IshikawaYasuhiko Okayama
    • H01L29/76
    • H01L29/7802H01L29/1095H01L29/66689H01L29/66719H01L29/7816
    • A manufacturing method for a semiconductor device, comprising the steps of: (a) forming a body portion of a DMOS by implanting impurity ions of a second conductive type into a predetermined region of a well of a first conductive type that has been formed in a main surface of a semiconductor substrate a plurality of times while changing an implantation amount or an implantation energy or both of them; (b) forming a gate dielectric film on the semiconductor substrate in a gate electrode formation region at least within the well, followed by a gate electrode on the gate dielectric film so as to cross an end of the body portion; (c) forming diffusion layers of the first conductive type on both sides of the gate electrode by implanting impurity ions of the first conductive type (provided that at least one of the diffusion layers is formed within the body portion); and (d) forming a contact layer of the second conductive type by implanting impurities of the second conductive type into the body portion with a impurity concentration higher than the impurity concentration in the body portion.
    • 一种半导体器件的制造方法,包括以下步骤:(a)通过将第二导电类型的杂质离子注入到形成在第一导电类型的第一导电类型的阱的预定区域中,形成DMOS的主体部分 在改变植入量或植入能量或两者的同时,半导体衬底的主表面多次; (b)在至少在所述阱内的栅电极形成区域中的所述半导体衬底上形成栅极电介质膜,随后在所述栅极电介质膜上形成栅电极,以跨越所述主体部分的端部; (c)通过注入第一导电类型的杂质离子(条件是至少一个扩散层形成在主体部分内),在栅电极的两侧形成第一导电类型的扩散层; 和(d)通过将杂质浓度高于体部杂质浓度的杂质浓度注入第二导电类型的杂质而形成第二导电类型的接触层。
    • 9. 发明授权
    • Air-fuel ratio control system for two-cycle engine
    • 双循环发动机空燃比控制系统
    • US4960097A
    • 1990-10-02
    • US436692
    • 1989-11-15
    • Fusao TachibanaHideyuki IshikawaKazuo Suzuki
    • Fusao TachibanaHideyuki IshikawaKazuo Suzuki
    • F02D41/02F02B75/02F02D35/00F02D41/04F02D41/24F02D41/34
    • F02D41/28F02D35/00F02B2075/025F02D2400/04
    • An air-fuel ratio control system for a two-cycle engine is disclosed, which includes a cylinder, a crank case serving also as a pressure chamber, a fuel injection unit including an injector and a pump, an engine speed detecting element for detecting the engine speed, and a throttle opening degree detecting element for detecting the opening degree of a throttle valve. The control system is constructed of a crank case temperature detecting element for detecting the temperature of the crank case; a first setting element for setting an increment correction coefficient for increasing a fuel injection quantity, in accordance with the temperature of the crank case detected by the crank case temperature detecting element; a second setting element for setting a basic fuel injection quantity in response to the engine speed and throttle opening degree detected by the engine speed and throttle opening degree detecting element; and a third setting element for setting a fuel injection quantity by correcting the basic fuel injection quantity set by the second setting element in accordance with the increment correction coefficient set by the first setting element.
    • 公开了一种用于双冲程发动机的空燃比控制系统,其包括气缸,也用作压力室的曲轴箱,包括喷射器和泵的燃料喷射单元,用于检测喷射器的发动机转速检测元件 发动机转速以及用于检测节气门开度的节气门开度检测元件。 控制系统由用于检测曲轴箱温度的曲柄箱温度检测元件构成; 根据由曲柄箱温度检测元件检测的曲轴箱的温度,设定用于增加燃料喷射量的增量校正系数的第一设定元件; 第二设定元件,用于响应于由发动机转速和节气门开度检测元件检测到的发动机转速和节气门开度来设定基本燃料喷射量; 以及第三设定元件,用于通过根据由第一设定元件设定的增量校正系数校正由第二设定元件设定的基本燃料喷射量来设定燃料喷射量。