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1. 发明申请

US20130122706A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20130122706A1
公开(公告)日：2013-05-16
申请号：US13428681
申请日：2012-03-23
申请人： Hisashi OKUCHI , Hidekazu Hayashi , Kentaro Shimayama , Hiroshi Tomita
发明人： Hisashi OKUCHI , Hidekazu Hayashi , Kentaro Shimayama , Hiroshi Tomita
IPC分类号： H01L21/306
CPC分类号： H01L21/30604 , H01L21/6835 , H01L2221/68327 , H01L2221/6834
摘要： According to one embodiment, a method of manufacturing of a semiconductor device is provided. In the method, a front surface of a semiconductor substrate and a front surface of a support substrate are bonded to each other by an adhesive. A part of a circumferential part of the support substrate is subjected to water-repellent treatment to thereby form a water-repellent area on the part of the circumferential part in such a manner that the water-repellent area and an end face of the adhesive are in contact with each other. The semiconductor substrate is removed from a rear surface side by wet etching.
摘要翻译：根据一个实施例，提供了半导体器件的制造方法。在该方法中，半导体衬底的前表面和支撑衬底的前表面通过粘合剂彼此粘结。对支撑基板的圆周部分的一部分进行防水处理，从而在周向部分的一部分上形成防水区域，使得防水区域和粘合剂的端面为彼此接触。通过湿法蚀刻从背面侧去除半导体衬底。

2. 发明申请

US20100240219A1 Method of treating a semiconductor substrate 有权
公开(公告)号：US20100240219A1
公开(公告)日：2010-09-23
申请号：US12801178
申请日：2010-05-26
申请人： Hiroshi Tomita , Tatsuhiko Koide , Hisashi Okuchi , Kentaro Shimayama , Hiroyasu Iimori , Linan Ji
发明人： Hiroshi Tomita , Tatsuhiko Koide , Hisashi Okuchi , Kentaro Shimayama , Hiroyasu Iimori , Linan Ji
IPC分类号： H01L21/306
CPC分类号： H01L21/02057 , H01L21/0206 , H01L21/02071 , H01L21/02101 , H01L21/3086 , H01L21/31133 , H01L21/32139 , Y10S134/902 , Y10S438/906 , Y10S438/964
摘要： A method of treating a semiconductor substrate has forming convex patterns over the semiconductor substrate by dry etching, cleaning and modifying a surface of the convex patterns by using chemical, forming a hydrophobic functional surface on the modified surface of the convex patterns, after forming the hydrophobic functional surface, rinsing the semiconductor substrate by using water, drying the semiconductor substrate, and removing the hydrophobic functional group from the hydrophobic functional surface of the convex patterns.

3. 发明授权

US07749909B2 Method of treating a semiconductor substrate 有权
标题翻译：处理半导体衬底的方法
公开(公告)号：US07749909B2
公开(公告)日：2010-07-06
申请号：US12574543
申请日：2009-10-06
申请人： Hiroshi Tomita , Tatsuhiko Koide , Hisashi Okuchi , Kentaro Shimayama , Hiroyasu Iimori , Linan Ji
发明人： Hiroshi Tomita , Tatsuhiko Koide , Hisashi Okuchi , Kentaro Shimayama , Hiroyasu Iimori , Linan Ji
IPC分类号： H01L21/311 , H01L21/365
CPC分类号： H01L21/02057 , H01L21/0206 , H01L21/02071 , H01L21/02101 , H01L21/3086 , H01L21/31133 , H01L21/32139 , Y10S134/902 , Y10S438/906 , Y10S438/964
摘要： A method of treating a semiconductor substrate has forming convex patterns over the semiconductor substrate by dry etching, cleaning and modifying a surface of the convex patterns by using chemical, forming a hydrophobic functional surface on the modified surface of the convex patterns, after forming the hydrophobic functional surface, rinsing the semiconductor substrate by using water, drying the semiconductor substrate, and removing the hydrophobic functional group from the hydrophobic functional surface of the convex patterns.
摘要翻译：处理半导体衬底的方法通过干法蚀刻在半导体衬底上形成凸起图案，通过使用化学方法清洗和改变凸形图案的表面，在形成疏水性之后在凸形图案的改性表面上形成疏水性功能表面功能表面，通过使用水冲洗半导体衬底，干燥半导体衬底，以及从凸形图案的疏水功能表面去除疏水官能团。

4. 发明授权

US07985683B2 Method of treating a semiconductor substrate 有权
标题翻译：处理半导体衬底的方法
公开(公告)号：US07985683B2
公开(公告)日：2011-07-26
申请号：US12801178
申请日：2010-05-26
申请人： Hiroshi Tomita , Tatsuhiko Koide , Hisashi Okuchi , Kentaro Shimayama , Hiroyasu Iimori , Linan Ji
发明人： Hiroshi Tomita , Tatsuhiko Koide , Hisashi Okuchi , Kentaro Shimayama , Hiroyasu Iimori , Linan Ji
IPC分类号： H01L21/312
CPC分类号： H01L21/02057 , H01L21/0206 , H01L21/02071 , H01L21/02101 , H01L21/3086 , H01L21/31133 , H01L21/32139 , Y10S134/902 , Y10S438/906 , Y10S438/964
摘要： A method of treating a semiconductor substrate has forming convex patterns over the semiconductor substrate by dry etching, cleaning and modifying a surface of the convex patterns by using chemical, forming a hydrophobic functional surface on the modified surface of the convex patterns, after forming the hydrophobic functional surface, rinsing the semiconductor substrate by using water, drying the semiconductor substrate, and removing the hydrophobic functional group from the hydrophobic functional surface of the convex patterns.
摘要翻译：处理半导体衬底的方法通过干法蚀刻在半导体衬底上形成凸起图案，通过使用化学方法清洗和改变凸形图案的表面，在形成疏水性之后在凸形图案的改性表面上形成疏水性功能表面功能表面，通过使用水冲洗半导体衬底，干燥半导体衬底，以及从凸形图案的疏水功能表面去除疏水官能团。

5. 发明申请

US20100075504A1 METHOD OF TREATING A SEMICONDUCTOR SUBSTRATE 有权
标题翻译：处理半导体衬底的方法
公开(公告)号：US20100075504A1
公开(公告)日：2010-03-25
申请号：US12574543
申请日：2009-10-06
申请人： Hiroshi Tomita , Tatsuhiko Koide , Hisashi Okuchi , Kentaro Shimayama , Hiroyasu Iimori , Linan Ji
发明人： Hiroshi Tomita , Tatsuhiko Koide , Hisashi Okuchi , Kentaro Shimayama , Hiroyasu Iimori , Linan Ji
IPC分类号： H01L21/306
CPC分类号： H01L21/02057 , H01L21/0206 , H01L21/02071 , H01L21/02101 , H01L21/3086 , H01L21/31133 , H01L21/32139 , Y10S134/902 , Y10S438/906 , Y10S438/964
摘要： A method of treating a semiconductor substrate has forming convex patterns over the semiconductor substrate by dry etching, cleaning and modifying a surface of the convex patterns by using chemical, forming a hydrophobic functional surface on the modified surface of the convex patterns, after forming the hydrophobic functional surface, rinsing the semiconductor substrate by using water, drying the semiconductor substrate, and removing the hydrophobic functional group from the hydrophobic functional surface of the convex patterns.
摘要翻译：处理半导体衬底的方法通过干法蚀刻在半导体衬底上形成凸起图案，通过使用化学方法清洗和改变凸形图案的表面，在形成疏水性之后在凸形图案的改性表面上形成疏水性功能表面功能表面，通过使用水冲洗半导体衬底，干燥半导体衬底，以及从凸形图案的疏水功能表面去除疏水官能团。

6. 发明申请

US20070181892A1 IMAGE DISPLAY DEVICE 审中-公开
标题翻译：图像显示设备
公开(公告)号：US20070181892A1
公开(公告)日：2007-08-09
申请号：US11681239
申请日：2007-03-02
申请人： Sachiko HIRAHARA , Satoko Oyaizu , Satoshi Ishikawa , Kentaro Shimayama
发明人： Sachiko HIRAHARA , Satoko Oyaizu , Satoshi Ishikawa , Kentaro Shimayama
IPC分类号： H01L33/00
CPC分类号： H01J29/028 , H01J2329/863
摘要： A spacer structure is provided between a first substrate formed with a phosphor screen and a second substrate provided with a plurality of electron emission sources. A supporting substrate of the spacer structure has a first surface opposed to the first substrate, a second surface opposed to the second substrate, and a plurality of electron beam apertures opposed to the electron emission sources. A plurality of spacers are set up on the second surface. The supporting substrate has a plurality of height reducing portions which are individually in contact with the spacers and elastically deformable in the height direction of the spacers. Each of the height reducing portions has a recess formed in the first surface so as to face the spacer and a plurality of grooves formed on the second surface and situated around the spacer.
摘要翻译：在形成有荧光屏的第一基板和设置有多个电子发射源的第二基板之间设置间隔结构。间隔结构的支撑衬底具有与第一衬底相对的第一表面，与第二衬底相对的第二表面和与电子发射源相对的多个电子束孔。多个间隔件设置在第二表面上。支撑基板具有多个高度减小部分，该多个高度减小部分分别与间隔件接触并可在间隔件的高度方向上弹性变形。每个高度减小部分具有形成在第一表面中以与面对间隔件的凹部和形成在第二表面上并且位于间隔件周围的多个凹槽。

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