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1. 发明授权

US5767559A Thin film type photoelectric conversion device 失效
标题翻译：薄膜型光电转换装置
公开(公告)号：US5767559A
公开(公告)日：1998-06-16
申请号：US463306
申请日：1995-06-05
申请人： Hisao Ito , Yoshihiko Sakai , Hiroyuki Hotta , Kazuhiro Sakai , Hiroyuki Miyake , Tsutomu Abe , Mamoru Nobue , Yasumoto Shimizu
发明人： Hisao Ito , Yoshihiko Sakai , Hiroyuki Hotta , Kazuhiro Sakai , Hiroyuki Miyake , Tsutomu Abe , Mamoru Nobue , Yasumoto Shimizu
IPC分类号： H01L27/146 , H04N1/00 , H04N1/03 , H01L27/14
CPC分类号： H01L27/14647 , H01L27/14667 , H04N1/00795 , H04N1/03
摘要： A thin-film type photoelectric conversion device for use in an image input unit of facsimile equipment, a scanner and the like, which uses a thin-film semiconductor as a phoconductive layer to reading not only a monochromatic image but also a color image with high resolution. A photoelectric conversion device having a photoconductive layer disposed between opposing electrodes, in which a surface facing in a direction perpendicular to a direction of film deposition of the photoconductive layer acting as a light-receiving surface.
摘要翻译：一种用于传真设备，扫描仪等的图像输入单元中的薄膜型光电转换装置，其使用薄膜半导体作为光电层，不仅读取单色图像而且还读取高色彩图像解析度。一种光电转换装置，其具有设置在相对电极之间的光电导层，其中面向垂直于用作光接收表面的光电导层的成膜方向的方向的表面。

2. 发明授权

US5348892A Image sensor and method of manufacturing the same 失效
标题翻译：图像传感器及其制造方法
公开(公告)号：US5348892A
公开(公告)日：1994-09-20
申请号：US936837
申请日：1992-08-28
申请人： Hiroyuki Miyake , Tsutomu Abe , Hisao Ito , Hiroyuki Hotta , Yasumoto Shimizu , Yoshihiko Sakai
发明人： Hiroyuki Miyake , Tsutomu Abe , Hisao Ito , Hiroyuki Hotta , Yasumoto Shimizu , Yoshihiko Sakai
IPC分类号： H01L27/146 , H04N3/15 , H01L31/18
CPC分类号： H04N3/1593 , H01L27/14643
摘要： An image sensor having an photodetecting element array including a plurality of blocks linearly arrayed in a main scan direction, each block consisting of a plurality of photodetecting elements, a plurality of switching elements for transferring every block charges generated in the photodetecting elements, and drive ICs for outputting the charges in the form of image signals. In the image sensor, the switching elements in a block of the photodetecting element array and the switching elements in another block located adjacent to the former block are connected by wires in such a way that the switching elements closest to each other between the blocks are interconnected, the switching elements next close to each other are interconnected, and so on. The wires connecting from the switching elements in a block to the switching elements in blocks on both sides of the former block are disposed oppositely with respect to the main scan direction, and are disposed in such a way that the shortest wire connecting the switching elements is located closest to the photodetecting element array, the next short wire is located next close to the photodetecting element array, and so on.
摘要翻译：一种具有光检测元件阵列的图像传感器，该受光元件阵列包括沿主扫描方向线性排列的多个块，每个块由多个光检测元件组成，多个开关元件用于传送每个块在光检测元件中产生的电荷，以及驱动IC 用于以图像信号的形式输出电荷。在图像传感器中，光检测元件阵列的块中的开关元件和与前一块相邻的另一个块中的开关元件通过导线连接，使得块之间彼此最接近的开关元件互连接下来的开关元件相互连接，等等。从块中的开关元件连接到前块的两侧的块中的开关元件的配线相对于主扫描方向相对地设置，并且以这样的方式设置，使得连接开关元件的最短的线为位于最接近光电检测元件阵列的位置，下一条短导线位于接近光电检测元件阵列的位置，依此类推。

3. 发明授权

US5182625A Image sensor and method of manufacturing the same 失效
标题翻译：图像传感器及其制造方法
公开(公告)号：US5182625A
公开(公告)日：1993-01-26
申请号：US691517
申请日：1991-04-25
申请人： Hiroyuki Miyake , Tsutomu Abe , Hisao Ito , Hiroyuki Hotta , Yasumoto Shimizu , Yoshihiko Sakai
发明人： Hiroyuki Miyake , Tsutomu Abe , Hisao Ito , Hiroyuki Hotta , Yasumoto Shimizu , Yoshihiko Sakai
IPC分类号： H01L27/146 , H04N3/15
CPC分类号： H04N3/1593 , H01L27/14643
摘要： An image sensor having an photodetecting element array including a plurality of blocks linearly arrayed in a main scan direction, each block consisting of a plurality of photodetecting elements, a plurality of switching elements for transferring every block charges generated in the photodetecting elements, and drive ICs for outputting the charges in the form of image signals. In the image sensor, the switching elements in a block of the photodetecting element array and the switching elements in another block located adjacent to the former block are connected by wires in such a way that the switching elements closest to each other between the blocks are interconnected, the switching elements next close to each other are interconnected, and so on. The wires connecting from the switching elements in a block to the switching elements in blocks on both sides of the former block are disposed oppositely with respect to the main scan direction, and are disclosed in such a way that the shortest wire connecting the switching elements is located closest to the photodetecting element array, the next short wire is located next close to the photodetecting element array, and so on.
摘要翻译：一种具有光检测元件阵列的图像传感器，该受光元件阵列包括沿主扫描方向线性排列的多个块，每个块由多个光检测元件组成，多个开关元件用于传送每个块在光检测元件中产生的电荷，以及驱动IC 用于以图像信号的形式输出电荷。在图像传感器中，光检测元件阵列的块中的开关元件和与前一块相邻的另一个块中的开关元件通过导线连接，使得块之间彼此最接近的开关元件互连接下来的开关元件相互连接，等等。从块中的开关元件连接到前块的两侧的块中的开关元件的导线相对于主扫描方向相对地设置，并且以这样的方式公开，使得连接开关元件的最短导线为位于最接近光电检测元件阵列的位置，下一条短导线位于接近光电检测元件阵列的位置，依此类推。

4. 发明授权

US5360744A Method of manufacturing image sensor 失效
标题翻译：图像传感器的制造方法
公开(公告)号：US5360744A
公开(公告)日：1994-11-01
申请号：US221541
申请日：1994-04-01
申请人： Yasumoto Shimizu , Hisao Ito
发明人： Yasumoto Shimizu , Hisao Ito
IPC分类号： H01L27/12 , H01L27/146 , H01L21/324
CPC分类号： H01L27/14643 , H01L27/12
摘要： A method of manufacturing an image sensor comprising light-receiving elements, thin film transistor switching elements, and a group of lines, in which the metal electrode portion of each light-receiving element, the source and drain electrode portions of each thin film transistor switching element, and the intermediate ground wiring layer of the group of wiring lines can be formed simultaneously. As a result, the image sensor can be prepared with ease under an efficient process.
摘要翻译：一种制造包括光接收元件，薄膜晶体管开关元件和一组线的图像传感器的方法，其中每个光接收元件的金属电极部分，每个薄膜晶体管的源极和漏极部分切换元件，并且可以同时形成布线组的中间接地布线层。结果，可以在有效的过程下容易地制备图像传感器。

5. 发明授权

US4683044A Method of manufacturing an electroluminescent panel without any adverse influence on an underlying layer 失效
标题翻译：制造电致发光面板的方法，对底层没有任何不利影响
公开(公告)号：US4683044A
公开(公告)日：1987-07-28
申请号：US879050
申请日：1986-06-26
申请人： Yasumoto Shimizu , Takeo Matsudaira
发明人： Yasumoto Shimizu , Takeo Matsudaira
IPC分类号： H05B33/10 , C23C14/00
CPC分类号： H05B33/10
摘要： In an electroluminescent panel which in turn comprises a transparent electrode member on a transparent substrate, a first dielectric layer, an electroluminescent layer, a second dielectric layer, and a back electrode member, at least one of the first and the second dielectric layers is divided into first and second partial dielectric films nearer to and farther from the transparent electrode member, respectively. The first partial dielectric film is deposited in a nonoxidization atmosphere by the use of a pellet which essentially consists of silicon and oxygen. Thereafter, the second partial dielectric film is deposited on the first partial dielectric film in an oxygen atmosphere and has a relative dielectric constant greater than the first partial dielectric film. Alternatively, each of the first and the second dielectric layers may comprise the first partial dielectric film of silicon and oxide and the second partial dielectric film mentioned above.
摘要翻译：在电致发光面板中，其又包括在透明基板上的透明电极部件，第一电介质层，电致发光层，第二电介质层和背面电极部件，第一和第二电介质层中的至少一个被分割分别进入离透明电极部件更靠近并远离透明电极部件的第一和第二部分电介质膜。第一部分介电膜通过使用基本上由硅和氧组成的颗粒在非氧化气氛中沉积。此后，第二部分电介质膜在氧气氛中沉积在第一部分电介质膜上，并且具有大于第一部分电介质膜的相对介电常数。或者，第一和第二电介质层中的每个可以包括硅和氧化物的第一部分电介质膜和上述第二部分电介质膜。

6. 发明授权

US5188901A Electroluminescent panel having a fluoroesin layer 失效
标题翻译：具有氟内酯层的电致发光面板
公开(公告)号：US5188901A
公开(公告)日：1993-02-23
申请号：US436550
申请日：1989-11-13
申请人： Yasumoto Shimizu
发明人： Yasumoto Shimizu
IPC分类号： H05B33/04 , H05B33/12
CPC分类号： H05B33/12 , H05B33/04 , Y10S428/917 , Y10T428/3154
摘要： In an electroluminescent panel comprising transparent and back electrode members opposite to each other and an electroluminescent laminate block between the transparent and the back electrode members, a fluororesin layer is coated on the electroluminescent laminate block together with the back electrode member so as to prevent invasion of moisture into the electroluminescent laminate block. The fluororesin layer has a thickness not thinner than 500 angstroms and may be formed by a fluororesin selected from a group consisting of polytetrafluoroethylene, polychlorofluoroethylene, polyvinylidene fluoride, and trifluoroethylene.
摘要翻译：在包括彼此相对的透明和背面电极构件的电致发光面板中，以及在透明和背面电极构件之间的电致发光层叠块，将氟树脂层与背面电极构件一起涂覆在电致发光层叠块上，以防止水分进入电致发光层压块。氟树脂层的厚度不小于500埃，可以由选自聚四氟乙烯，聚氯氟乙烯，聚偏二氟乙烯和三氟乙烯的氟树脂形成。

7. 发明授权

US4870322A Electroluminescent panel having a layer of germanium nitride between an electroluminescent layer and a back electrode 失效
标题翻译：电致发光面板在电致发光层和背面电极之间具有氮化锗层
公开(公告)号：US4870322A
公开(公告)日：1989-09-26
申请号：US852296
申请日：1986-04-15
申请人： Takeo Matsudaira , Yasumoto Shimizu
发明人： Takeo Matsudaira , Yasumoto Shimizu
IPC分类号： G09F9/33 , H05B33/22
CPC分类号： H05B33/22 , G09F9/33
摘要： In an electroluminescent panel comprising a transparent electrode, a back electrode, and an electroluminescent layer between the transparent and the back electrodes, an intermediate layer is interposed between the electroluminescent layer and the back electrode and essentially consists of germanium and nitrogen. The intermediate layer serves as a light absorption layer for absorbing ambient light. A nitrogen distribution in the intermediate layer may be either substantially uniform or decreased from the electroluminescent layer side towards the back electrode side. The decrease may be made stepwise or continuously. The intermediate layer may be superposed through a dielectric layer or directly on the electroluminescent layer. Only oxygen may be added in intermediate layer to the germanium and the nitrogen, to provide either a substantially uniform oxygen distribution or a variable oxygen distribution which is continuously or stepwise decreased from the electroluminescent layer side towards the back electrode side.
摘要翻译：在透明电极和后电极之间的透明电极，背面电极和电致发光层的电致发光面板中，介于电致发光层和背面电极之间，并且基本上由锗和氮组成的中间层。中间层用作吸收环境光的光吸收层。中间层中的氮分布可以从电致发光层侧向后电极侧基本上均匀或者减小。可以逐步地或连续地进行减少。中间层可以通过电介质层或直接在电致发光层上叠加。可以在中间层中仅向氧和氮中加入氧，以提供基本上均匀的氧分布或从电致发光层侧向后电极侧连续或逐步降低的可变氧分布。

8. 发明授权

US5003221A Electroluminescence element 失效
标题翻译：电致发光元件
公开(公告)号：US5003221A
公开(公告)日：1991-03-26
申请号：US237528
申请日：1988-08-26
申请人： Yasumoto Shimizu
发明人： Yasumoto Shimizu
IPC分类号： H05B33/22
CPC分类号： H05B33/22
摘要： In an EL element of this invention, a thin film layer is formed between a transparent substrate and a layer formed adjacent to the transparent substrate, and the refractive index of the thin film layer is changed to be approximated to those of these layers toward the interfaces between the thin film layer and the corresponding layers, so that a difference in refractive index at these interfaces is minimized. The thin film layer may be formed between at least two adjacent layers formed on the transparent substrate.
摘要翻译：在本发明的EL元件中，在透明基板和与透明基板相邻形成的层之间形成薄膜层，并且将薄膜层的折射率改变为近似于这些层朝向界面的折射率在薄膜层和相应的层之间，使得这些界面处的折射率差最小化。薄膜层可以形成在形成在透明基板上的至少两个相邻层之间。

9. 发明授权

US4734618A Electroluminescent panel comprising a layer of silicon between a transparent electrode and a dielectric layer and a method of making the same 失效
标题翻译：在透明电极和电介质层之间包括硅层的电致发光面板及其制造方法
公开(公告)号：US4734618A
公开(公告)日：1988-03-29
申请号：US824071
申请日：1986-01-30
申请人： Takeo Matsudaira , Yasumoto Shimizu
发明人： Takeo Matsudaira , Yasumoto Shimizu
IPC分类号： H05B33/12 , H05B33/22 , H05B33/28 , H05B33/02
CPC分类号： H05B33/22 , H05B33/28
摘要： In an electroluminescent panel comprising a transparent electrode, a back electrode, an electroluminescent layer between the transparent and the back electrodes, and a dielectric layer between the transparent electrode and the electroluminescent layer, an intermediate layer consisting of silicon is interposed between the transparent electrode and the dielectric layer. The silicon layer may have a thickness between 10 angstroms and 200 angstroms. The silicon layer may be deposited on the transparent electrode by the use of a selected one of sputtering, vacuum evaporation, chemical vapor deposition, and ion plating techniques.
摘要翻译：在透明电极，背面电极，透明电极和背面电极之间的电致发光层以及透明电极和电致发光层之间的电介质层的电致发光面板中，由硅构成的中间层介于透明电极和电介质层。硅层的厚度可以在10埃到200埃之间。可以通过使用溅射，真空蒸发，化学气相沉积和离子电镀技术中的所选择的方法将硅层沉积在透明电极上。

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